Datasheet TDE3237FP, TDE3237DP Datasheet (SGS Thomson Microelectronics)

HIGHOUTPUTCURRENT
ADJUSTABLE SHORT-CIRCUIT PROTECTION
INTERNAL THERMAL PROTECTION WITH

HYSTERESIS TO AVOID THE INTERMEDI­ATE OUTPUTLEVELS

LARGESUPPLY VOLTAGE RANGE: 8 TO30V

TDE3237

INTELLIGENT POWER SWITCH

ADVANCE DATA

Minidip SO14

DESCRIPTION

The TDE3237 is a monolithic amplifier designed
for high-current and high-voltage applications,
specIally to drive lamps, relays and stepping mo­tors.
The device is essentially blow-out proof. Current
limiting is availableto limitthe peak output current
to a safe value, the adjustment only requires one
externalresistor. In addition, thermal shut down is
providedto keep the IC fromoverheating.If exter­nal dissipation becomes too great, the driver will

PIN CONNECTIONS

ORDERING NUMBERS:

TDE3237DP TDE3237FP

shut down to prevent excessiveheating.
The output is also protected from short-circuits
with the positive power supply.
The device operates over a wide range of supply
voltagesfrom standard±15Voperationalamplifier
supplies down to the single 12V or 24V used for
industrialelectronicsystems.

Minidip

SO14

November 1991

This is advanced information ona new productnow in development or undergoing evaluation. Details aresubject to change without notice.

T is advanced information on a new product now indevelopment or undergoingevaluation. Details are subjectto change without

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TDE3237

ABSOLUTE MAXIMUMRATINGS

Symbol Parameter Value Unit

V

CC

V

V
I

P

T

stg

T

oper

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

R

th(j-c)

R

th(j-a)

Note : 1. Devices bonded on 40 cm glass-epoxy printed circuit0.15cm thick with 4cm2of copper

Supply Voltage 36 V
Differantial Input Voltage 36 V

ID

Input Voltage 36 V

I

Output Current 500 mA

O

Power Dissipation Internally Limited W

tot

Storage Temperature Range – 65 to + 150 °C
Operating Free-air Temperature Range – 25 to + 85 °C

Maximum Junction-case Thermal Resistance (note 1) Minidip 50 °C/W
Maximum Junction-ambient Thermal Resistance (note 1) Minidip 120 °C/W
Junction-ceramic Substrate (case gluedto substrate) SO14 90 °C/W
Junction-ceramic Substrate (case gluedto substrate, substrate temperature

maintened constant) SO14 65 °C/W

SCHEMATICDIAGRAM

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TDE323 7

ELECTRICAL CHARACTERISTICS T

= – 25 to +85 °C, VCC=8to≤30 V, unlessotherwise speci-

amb

fied (note 1).

Symbol Parameter Min. Typ. Max. Unit

V

I

IB

I

CC

V

CM

I

SC

V

CC–VO

I

OL

Notes :

2) Foroperating athigh temperature, theTDE3237, must bederatedbased on a+150 C maximum junction temperature anda junction-ambient
thermalas showed in the thermal characteristics data base.

3) The offsetvoltage given is the maximum value of input voltage required to drive the outputvoltage within 2 V of the gro und or thesupply
voltage.

Input Offset Voltage - (note 3) – 2 50 mV

IO

Input Bias Current – 0.1 1.5 µA
Supply Current (VCC= + 24 V, IO=0) –35mA
Common-mode Input Voltage Range 2 – VCC–2 V
Short-circuit Current Limit (T
Output Saturation Voltage (output high)

=0, VI+–VI– ≥ 50 mV, IO= 150 mA

(R

SC

Low Level Output Current
(V

O=VCC

=+24VT

amb

=+25°C, RSC= 3.3 Ω ) – 230 – -mA

case

– 1 1.5 V

– – 100 µA

=+25°C)

SIMPLIFIEDSCHEMATIC

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TDE3237

4/7

SO14PACKAGE MECHANICAL DATA

TDE3237

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.069
a1 0.1 0.25 0.004 0.009
a2 1.6 0.063

b 0.35 0.46 0.014 0.018
b1 0.19 0.25 0.007 0.010

C 0.5 0.020
c1 45(typ.)

D 8.55 8.75 0.336 0.344

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 7.62 0.300

F 3.8 4.0 0.15 0.157

L 0.4 1.27 0.016 0.050

M 0.68 0.027

S 8 (max.)

mm inch

5/7

TDE3237

MINIDIP PACKAGE MECHANICALDATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 3.32 0.131
a1 0.51 0.020

B 1.15 1.65 0.045 0.065

b 0.356 0.55 0.014 0.022
b1 0.204 0.304 0.008 0.012

D 10.92 0.430

E 7.95 9.75 0.313 0.384

e 2.54 0.100
e3 7.62 0.300
e4 7.62 0.300

F 6.6 0.260

I 5.08 0.200
L 3.18 3.81 0.125 0.150
Z 1.52 0.060

mm inch

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TDE3237

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications men­tioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without ex­press writtenapproval of SGS-THOMSON Microelectronics.

 1994 SGS-THOMSON Microelectronics - All RightsReserved

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