Datasheet TDE1898CSP, TDE1898CFP, TDE1898CDP, TDE1897CFP, TDE1897CDP Datasheet (SGS Thomson Microelectronics)

TDE1897C
TDE1898C

0.5A HIGH-SIDE DRIVER

INDUSTRIALINTELLIGENT POWER SWITCH

PRELIMINARY DATA

0.5A OUTPUT CURRENT
18V TO 35V SUPPLY VOLTAGE RANGE
INTERNALCURRENTLIMITING
THERMALSHUTDOWN
OPENGROUND PROTECTION
INTERNAL NEGATIVE VOLTAGE CLAMPING

TO V
DIFFERENTIAL INPUTS WITH LARGE COM-

MON MODE RANGE AND THRESHOLD
HYSTERESIS

UNDERVO LTAGELOCKOUTWITHHYSTER ESIS
OPENLOAD DETECTION
TWO DIAGNOSTIC OUTPUTS
OUTPUTSTATUS LED DRIVER

DESCRIPTION

The TDE1897C/TDE1898C is a monolithic Intelli­gent Power Switch in Multipower BCD Technol-

BLOCKDIAGRAM

- 45V FOR FAST DEMAGNETIZATION

S

MULTIPOWERBCD TECHNOLOGY

Minidip SIP9 SO20

ORDERING NUMBERS:

TDE1897CDP TDE1898CSP TDE1897CFP
TDE1898CDP TDE1898CFP

ogy, for driving inductive or resistive loads. An in­ternal Clamping Diode enables the fast demag­netizationof inductive loads.
Diagnostic for CPU feedback and extensive use
of electrical protections make this device inher­ently indistructible and suitable for general pur­pose industrial applications.

October 1995

1/12

TDE1897C- TDE1898C

PIN CONNECTIONS (Top view)

SIP9

Minidip

SO20

ABSOLUTE MAXIMUM RATINGS (Minidippin reference)

Symbol Parameter Value Unit

V

V

S–VO

V
V

I

E
P
T

T

S

I

i

O

tot
op

stg

Supply Voltage (Pins 3 - 1) (TW< 10ms) 50 V
Supply to OutputDifferential Voltage. SeealsoVCl3-2(Pins3 - 2) internally limited V
Input Voltage (Pins 7/8) -10 to VS +10 V

i

Differential Input Voltage (Pins 7 - 8) 43 V

i

Input Current (Pins 7/8) 20 mA
Output Current (Pins 2 - 1). See also ISC internally limited A
Energy from Inductive Load(TJ=85°C) 200 mJ

l

Power Dissipation. See alsoTHERMAL CHARACTERISTICS. internally limited W
Operating Temperature Range (T

) -25 to +85 °C

amb

Storage Temperature -55 to 150 °C

THERMALDATA

Symbol Description Minidip Sip SO20 Unit

Thermal Resistance Junction-case Max. 10 °C/W
Thermal Resistance Junction-ambient Max. 100 70 90 °C/W

2/12

R

th j-case

R

th j-amb

TDE1897C - TDE1898C

ELECTRICALCHARACTERISTICS (VS=24V; T

= –25 to +85°C,unless otherwise specified)

amb

Symbol Parameter Test Condition Min. Typ. Max. Unit

3 Supply Voltage for Valid

V

smin

I

> 0.5mA @ V

diag

= 1.5V 9 35 V

dg1

Diagnostics

V

3 Supply Voltage (operative) 18 24 35 V

s

3 Quiescent Current

I

q

V

sth1

V

sth2

V

shys

I

sc

V

don

I

oslk

V

ol

3-2 Internal Voltage Clamp (VS-VO)@IO= -500mA 45 55 V

V

cl

I

old

7-8 Common Mode Input Voltage

V

id

I

out=Ios

=0

Undervoltage Threshold 1 (See fig. 1); T

3 Undervoltage Threshold 2 (See fig. 1); Tamb = 0 to +85°C 15.5 V

Supply Voltage Hysteresis (See fig. 1); T
Short Circuit Current VS= 18 to 35V; RL=1Ω 0.75 1.5 A

3-2 Output Voltage Drop @ I

2 OutputLeakage Current @ Vi=Vil,Vo= 0V 300 µA

2 Low State Out Voltage @ Vi=Vil;RL=∞ 0.8 1.5 V

2 Open Load Detection Current Vi=Vih;T

Range (Operative)

7-8 Input Bias Current Vi= –7 to 15V; –In = 0V –700 700 µA

I

ib

7-8 InputThreshold Voltage V+In > V–In 0.8 1.4 2 V

V

ith

7-8 Input Threshold Hysteresis

V

iths

V

il

V

ih

= 0 to +85°C11 V

amb

= 0 to +85°C 0.4 1 3 V

amb

= 625mA; Tj=25°C

out

@I

= 625mA; Tj= 125°C

out

= 0 to +85°C1 6mA

amb

VS= 18 to 35V,
V

S=Vid

7-8 < 37V

–7 15 V

V+In > V–In 50 400 mV

2.5

4.5

250
400

4

7.5

425
600

Voltage

R

7-8 Diff. InputResistance @ 0 < +In < +16V; –In = 0V

id

@ –7 < +In < 0V; –In= 0V

I

7-8 Input Offset Current V+In = V–In +Ii

ilk

0V < V

<5.5V –Ii

i

–In = GND +Ii
0V < V+In <5.5V –Ii –250

+In = GND +Ii
0V < V–In <5.5V –Ii

V

2 Output Status Threshold 1

oth1

(See fig. 1) 12 V

–20
–75 –25

–100

–50

400
150

+10

–125

–30
–15

+20 µA

+50 µA

Voltage

V

2 Output Status Threshold 2

oth2

(See fig. 1) 9 V

Voltage

V

2 Output Status Threshold

ohys

(See fig. 1) 0.3 0.7 2 V

Hysteresis

I

4 Output Status Source Current V

osd

3-4 Active Output Status Driver

V

osd

Drop Voltage

4 Output Status Driver Leakage

I

oslk

Current

5/6 Diagnostic Drop Voltage D1 / D2 = L @ I

V

dgl

out>Voth1,Vos

Vs–Vos@Ios= 2mA;

T

= -25 to 85°C

amb

V

out<Voth2,Vos

V

= 18 to 35V

S

D1 / D2 = L @ I

5/6 Diagnostic Leakage Current D1 / D2 =H @ 0 < Vdg<V

I

dglk

= 2.5V 2 4 mA

5V

=0V

diag
diag

= 0.5mA
= 3mA

s

25 µA

250

1.5
25 µA

VS= 15.6 to 35V

5/6-3 Clamping Diodes at the

V

fdg

@I

= 5mA; D1 / D2 = H 2 V

diag

Diagnostic Outputs.
Voltage Drop to V

Note Vil < 0.8V, Vih > 2V @ (V+In> V–In); Minidip pin reference.

All test not dissipative.

S

mA
mA

mV
mV

KΩ
KΩ

µA

µA
µA

µA

mV

V

3/12

TDE1897C- TDE1898C

SOURCEDRAIN NDMOS DIODE

Symbol Parameter Test Condition Min. Typ. Max. Unit

2-3 Forward On Voltage @ I

V

fsd

2-3 Forward Peak Current t = 10ms; d = 20% 2 A

I

fp

2-3 Reverse Recovery Time If= 625mA di/dt = 25A/µs 200 ns

t

rr

2-3 Forward Recovery Time 50 ns

t

fr

THERMALCHARACTERISTICS (*)

Θ Lim Junction Temp. Protect. 135 150 °C

T

H

Thermal Hysteresis 30 °C

SWITCHINGCHARACTERISTICS (VS=24V; RL=48Ω) (*)

= 625mA 1 1.5 V

fsd

t

on

t

off

t

d

Turn on Delay Time 100 µs
Turn off Delay Time 20 µs
Input Switching to Diagnostic

100 µs

Valid

Note Vil < 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference. (*) Not tested.

Figure1

DIAGNOSTICTRUTH TABLE

Diagnostic Conditions Input Output Diag1 Diag2

Normal Operation L

H

Open Load Condition (I

)L

o<Iold

H

Short to V

S

L

H

Short Circuit to Ground (I

) (**) TDE1897C

O=ISC

TDE1898C

H <H (*) H L
HH

Output DMOS Open L

H

Overtemperature L

H

SupplyUndervoltage (V
supplyvoltage;V

S<Vsth2

S<Vsth1

in the fallingphase of the

inthe rising phaseof the supply

L

H

voltage)

(*) According to the intervention of the current limiting block.
(**) A cold lampfilament,or a capacitive load may activatethe current limiting circuit of the IPS,when theIPS is initially turned on.TDE1897
uses Diag2 to signal such condition, TDE1898 does not.

4/12

L

H

L

H
H

H

H
H

H

L
L

L

H

L
L

L
L

L
L

L

H
H

L

H
H

L
L

H
H

H
H

H
H

H
H

H
H

L
L

L
L

TDE1897C - TDE1898C

APPLICATION INFORMATION

DEMAGNETIZATIONOF INDUCTIVE LOADS
An internal zener diode, limiting the voltage

across the Power MOS to between 45 and 55V
(V

), provides safe and fast demagnetization of

cl

inductiveloads without external clamping devices.
The maximum energy that can be absorbed from

an inductive load is specified as 200mJ (at

=85°C).

T

j

To define the maximumswitching frequencythree
pointshave to be considered:

1) The total power dissipation is the sum of the
On State Power and of the Demagnetization
Energy multipliedby the frequency.

2) The total energy W dissipated in the device
during a demagnetizationcycle (figg. 2, 3) is:

W = V

L

Io–

V

cl–Vs

R

L

L

cl

R

log





1 +

Vcl–V



V

s







s



Where:

V

= clamp voltage;

cl

L =inductive load;

= resistiveload;

R

L

Vs =supply voltage;
I

O=ILOAD

3) In normal conditions the operating Junction
temperatureshould remain below 125°C.

Figure 3: DemagnetizationCycle Waveforms

Figure2: InductiveLoad Equivalent Circuit

Figure 4: Normalized R

Temperature

α

1.8
RDSON (Tj)

α=

1.6

1.4

1.2

1.0

0.8

0.6

-25 0 25 50 75 100 125 Tj (°C)

RDSON (Tj=25°C)

DSON

vs. Junction

D93IN018

5/12

TDE1897C- TDE1898C

WORST CONDITION POWER DISSIPATION IN
THEON-STATE

In IPS applications the maximum average power
dissipation occurs when the device stays for a
long time in the ON state. In such a situation the
internal temperature depends on delivered cur­rent (and related power), thermal characteristics
of the packageand ambient temperature.

At ambient temperature close to upper limit
(+85°C)and in theworst operating conditions,it is
possible that the chip temperature could increase
so much to make the thermal shutdown proce­dureuntimely intervene.

Our aim is to find the maximum current the IPS
can withstand in the ON state without thermal
shutdown intervention, related to ambient tem­perature.To this end, we should consider the fol­lowingpoints:

1) The ON resistance R

DSON

of the output
NDMOS (the real switch) of the device in­creases with its temperature.
Experimentalresults show that silicon resistiv­ity increases with temperature at a constant
rate, rising of 60% from 25°Cto 125°C.
The relationship between R

DSON

and tem-

peratureis therefore:

R

DSON

= R

DSON0

( 1 + k )

( Tj± 25 )

where:

T

is the silicon temperature in °C

j

R
k is the constant rate (k = 4.711 ⋅

DSON0

isR

DSON

at Tj=25°C

10

±3

)

(see fig.4).

the third element are constant, while the first
one increases with temperature because
R

increasesas well.

DSON

3) The chip temperature must not exceed ΘLim
in order do not lose the control of the device.
The heat dissipation path is represented by
the thermal resistance of the system device­board-ambient (R

). In steady state condi-

th

tions, this parameter relates the power dissi­pated P
the ambient temperatureT

T

j

to the silicon temperature Tjand

± T

on

amb

= Pon⋅ R

th

amb

:

(2)

From this relationship, the maximum power
P

which can be dissipated without exceed-

on

ing ΘLim at a given ambient temperature

is:

T

amb

P

on

=

ΘLim ± T

amb

R

th

Replacing the expression (1) in this equation
and solvingfor I

, we can find the maximum

out

current versus ambient temperature relation­ship:

ΘLim ± T

I

= √

outx

amb

R

DSONx

± Pq± P

R

th

os

2) In the ON state the power dissipatedin the
device is dueto three contributes:

a) power lost in the switch:

P

out

= I

out

2

⋅ R

DSON(Iout

is theoutput cur-

rent);

b) power due to quiescent current in the ON

state Iq,sunk by thedevice in additionto
I

out:Pq=Iq⋅Vs(Vs

isthe supplyvoltage);

c) an external LED could be used to visualize

the switchstate (OUTPUT STATUS pin).
Such a LEDis driven by aninternal current
source (deliveringI

) and therefore,if Vosis

os

the voltagedrop across the LED, thedissi­pated power is: P

= I

⋅( V

± V

os

os

s

).

os

Thus the total ON state power consumptionis
given by:

= P

P

on

+ Pq+ P

out

os

(1)

In theright side of equation 1, the secondand

6/12

where R
course, I
maximum operative current I

xisR

DSON

values are top limited by the

outx

at Tj=ΘLim. Of

DSON

outx

(500mA
nominal).
From the expression (2) we can also find the
maximum ambient temperature T
a given power P

T

amb

=ΘLim ±

( I

out

canbe dissipated:

on

=ΘLim± Pon⋅ Rth=

2

⋅ R

+ Pq+ Pos) ⋅ R

DSONx

amb

at which

th

In particular, this relation is useful to find the
maximum ambient temperature T
which I

T

ambx

+ P

canbe delivered:

outx

=ΘLim ±(I
+ Pos) ⋅ R

q

th

outx

2

⋅ R

DSONx

+

(4)

ambx

at

Referring to application circuit in fig. 5, let us con­sider the worstcase:

- The supply voltage is at maximumvalue of in­dustrial bus (30V instead of the 24V nominal
value).This means also that I

risesof 25%

outx

TDE1897C - TDE1898C

(625mAinstead of 500mA).

- All electrical parameters of the device, con­cerning the calculation, are at maximum val­ues.

- Thermal shutdown threshold is at minimum
value.

- No heat sink nor air circulation (R
R

thj-amb

).

equal to

th

Therefore:
V

= 30V, R

s

=2.5V, ΘLim = 135°C

V

os

R

thj-amb

= 100°C/W (Minidip); 90°C/W (SO20);

= 0.6Ω,Iq= 6mA, Ios= 4mA @

DSON0

70°C/W(SIP9)

It follows:
I

= 0.625mA, R

outx

P

=110mW

os

= 1.006Ω,Pq= 180mW,

DSONx

Figure5: Application Circuit.

From equation 4, we can find:

= 66.7°C(Minidip);

T

ambx

73.5°C(SO20);

87.2°C(SIP9).

Therefore, the IPS TDE1897/1898, although
guaranteed to operate up to 85°C ambient tem­perature,if used in the worstconditions,can meet
some limitations.

SIP9 package, which has the lowest R

thj-amb

, can
work at maximum operative current over the en­tire ambient temperature range in theworst condi­tions too. For other packages, it is necessary to
consider some reductions.

With the aid of equation 3, we can draw a derat­ing curve giving the maximum current allowable
versus ambienttemperature. The diagrams, com­puted using parameter values above given, are
depicted in figg. 6 to 8.

If an increase of the operating area is needed,
heat dissipation must be improved (R

reduced)

th

e.g. by means of air cooling.

DC BUS 24V +/-25%

µP POLLING

D93IN014

+IN

-IN

D1
D2

+Vs

+

-

CONTROL

LOGIC

OUTPUT STATUSGND

Ios

OUTPUT

LOAD

7/12

TDE1897C- TDE1898C

Figure6: Max. OutputCurrent vs. Ambient

Temperature(Minidip Package,

th j-amb

=100°C/W)

D93IN015

R

(mA)

600

500

400

300

200

100

0

0 20 40 60 80 100 (°C)

Figure8: Max. OutputCurrent vs. Ambient

Temperature(SIP9 Package,
R

(mA)

th j-amb

=70°C/W)

D93IN017

Figure 7: Max. Output Current vs. Ambient

Temperature(SO20 Package,
R

th j-amb

(mA)

600

500

400

300

200

100

0

0 20406080100(°C)

=90°C/W)

D93IN016

600

500

400

300

200

100

0

0 20 40 60 80 100 (°C)

8/12

MINIDIPPACKAGE MECHANICAL DATA

TDE1897C - TDE1898C

DIM

Min. Typ. Max. Min. Typ. Max.

A 3.32 0.131

a1 0.51 0.020

B 1.15 1.65 0.045 0.065

b 0.356 0.55 0.014 0.022

b1 0.204 0.304 0.008 0.012

D 10.92 0.430
E 7.95 9.75 0.313 0.384

e 2.54 0.100
e3 7.62 0.300
e4 7.62 0.300

F 6.6 0260

i 5.08 0.200

L 3.18 3.81 0.125 0.150

Z 1.52 0.060

mm inch

9/12

TDE1897C- TDE1898C

SIP9 PACKAGEMECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 7.1 0.280

a1 2.7 3 0.106 0.118

B 23 0.90
B3 24.8 0.976
b1 0.5 0.020
b3 0.85 1.6 0.033 0.063

C 3.3 0.130

c1 0.43 0.017
c2 1.32 0.052

D 21.2 0.835
d1 14.5 0.571

e 2.54 0.100

e3 20.32 0.800

L 3.1 0.122
L1 3 0.118
L2 17.6 0.693
L3 0.25 0.010
L4 17.4 17.85 0.685 0,702

M 3.2 0.126

N 1 0.039
P 0.15 0.006

D

L3

L1

P

L2

L4

19

La1

e3

B

B3

N

M

b1

b3

ec1

d1

A

SIP9

C

c2

10/12

SO20PACKAGE MECHANICAL DATA

TDE1897C - TDE1898C

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.65 0.104
a1 0.1 0.2 0.004 0.008
a2 2.45 0.096

b 0.35 0.49 0.014 0.019

b1 0.23 0.32 0.009 0.013

C 0.5 0.020

c1 45° (typ.)

D 12.6 13.0 0.496 0.510

E 10 10.65 0.394 0.419

e 1.27 0.050

e3 11.43 0.450

F 7.4 7.6 0.291 0.300

L 0.5 1.27 0.020 0.050

M 0.75 0.030

S8°(max.)

mm inch

11/12

TDE1897C- TDE1898C

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which mayresult from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS­THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.

 1995 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved

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12/12