Datasheet TDE1897C, TDE1898C Datasheet (ST)

TDE1897C

®

INDUSTRIAL INTELLIGENT POWER SWITCH

0.5A OUTPUT CURRENT
18V TO 35V SUPPLY VOLTAGE RANGE
INTERNAL CURRENT LIMITING
THERMAL SHUTDOWN
OPEN GROUND PROTECTION
INTERNAL NEGATIVE VOLTAGE CLAMPING

TO V

- 45V FOR FAST DEMAGNETIZATION

S

DIFFERENTIAL INP UTS WITH LARGE COM­MON MODE RANGE AND THRESHOLD
HYSTERESIS

UNDERVOLTAGE LOCKOUT WITH HYSTERESIS
OPEN LOAD DETECTION
TWO DIAGNOSTIC OUTPUTS
OUTPUT STATUS LED DRIVER

DESCRIPTION

The TDE1897C/TDE1898C is a monolithic Intelli­gent Power Switch in Multipower BCD Technol-

BLOCK DIAGRAM

TDE1898C

0.5A HIGH-SIDE DRIVER

MULTIPOWER BCD TECHNOLOGY

Minidip SIP9 SO20

ORDERING NUMBERS:

TDE1897CDP TDE1898CSP TDE1897CFP

TDE1898CDP TDE1898CFP

ogy, for driving inductive or resistive loads. An in­ternal Clamping Diode enables the fast demag­netization of inductive loads.
Diagnostic for CPU feedback and extensive use
of electrical protections make this device inher­ently indistructible and suitable for general pur­pose industrial applications.

September 2003

1/12

TDE1897C - TDE1898C

PIN CONNECTIONS

SIP9

(Top view)

Minidip

SO20

ABSOLUTE MAXIMUM RATINGS

(Minidip pin reference)

Symbol Parameter Value Unit

Supply Voltage (Pins 3 - 1) (TW < 10ms) 50 V

V

S

VS – V

V
V

I

I

O

E

P

tot

T

op

T

stg

Supply to Output Differential Voltage. See also VCl 3-2 (P i ns 3 - 2) internally limited V

O

Input Voltage (Pins 7/8) -10 to VS +10 V

i

Differential Input Voltage (Pins 7 - 8) 43 V

i

Input Current (Pins 7/8) 20 mA

i

Output Current (Pins 2 - 1). See also ISC internally limited A
Energy from Inductive Load (TJ = 85°C) 200 mJ

l

Power Dissipation. See also THERMAL CHARACTERISTICS. internally limited W
Operating Temperature Range (T

) -25 to +85 °C

amb

Storage Temperature -55 to 150 °C

THERMAL DATA

Symbol Description Minidip Sip SO20 Unit

Thermal Resistance Junction-case Max. 10 °C/W
Thermal Resistance Junction-ambient Max. 100 70 90 °C/W

2/12

R

th j-case

R

th j-amb

TDE1897C - TDE1898C

ELECTRICAL CHARACTERISTICS

= 24V; T

(V

S

= –25 to +85°C, unles s otherwise specified)

amb

Symbol Parameter Test Condition Min. Typ. Max. Unit

3 Supply Voltage for Valid

V

smin

I

> 0.5mA @ V

diag

= 1.5V 9 35 V

dg1

Diagnostics

V

3 Supply Voltage (operative) 18 24 35 V

s

3 Quiescent Current

I

q

V

sth1

V

sth2

V

shys

I

sc

V

3-2 Output Voltage Drop @ I

don

I

oslk

I

= I

= 0

out

os

Undervoltage Threshold 1 (See fig. 1); T

3 Undervoltage Threshold 2 (See fig. 1); Tamb = 0 to +85°C15.5V

Supply Voltage Hysteresis (See fig. 1); T

Short Circuit Current VS = 18 to 35V; RL = 1Ω 0.75 1.5 A

2 Output Leakage Current @ Vi = Vil , Vo = 0V 300 µA

Vol 2 Low State Out Voltage @ Vi = Vil; RL =

3-2 Internal Voltage Clamp (VS - VO)@ IO = -500mA 45 55 V

V

cl

I

2 Open Load Detection Current Vi = Vih; T

old

7-8 Common Mode Input Voltage

V

id

Range (Operative)

7-8 Input Bias Current Vi = –7 to 15V; –In = 0V –700 700 µA

I

ib

V

7-8 Input Threshold Voltage V+In > V–In 0.8 1.4 2 V

ith

7-8 Input Threshold Hysteresis

V

iths

V

il

Vih

amb

amb

= 625mA; Tj = 25°C

out

@ I

= 625mA; Tj = 125°C

out

= 0 to +85°C1 6mA

amb

VS = 18 to 35V,
V

= Vid 7-8 < 37V

S

= 0 to +85°C11 V

= 0 to +85°C 0.4 1 3 V

∞

–7 15 V

2.5

4.5

250
400

4

7.5

425
600

0.8 1.5 V

V+In > V–In 50 400 mV

Voltage

R

7-8 Diff. Input Resistance @ 0 < +In < +16V; –In = 0V

id

@ –7 < +In < 0V; –In = 0V

I

7-8 Input Offset Current V+In = V–In +Ii

ilk

0V < V

<5.5V –Ii

i

–In = GND +Ii
0V < V+In <5.5V –Ii –250

+In = GND +Ii
0V < V–In <5.5V –Ii

2 Output Status Threshold 1

V

oth1

(See fig. 1) 12 V

–20
–75 –25

–100

–50

400
150

+10

–125

–30
–15

+20 µA

+50 µA

Voltage

V

oth2 2

Output Status Threshold 2

(See fig. 1) 9 V

Voltage

2 Output Status Threshold

V

ohys

(See fig. 1) 0.3 0.7 2 V

Hysteresis

I

4 Output Status Source Current V

osd

V

3-4 Active Output Status Driver

osd

Drop Voltage

4 Output Status Driver Leakage

I

oslk

Current

V

5/6 Diagnostic Drop Voltage D1 / D2 = L @ I

dgl

5/6 Diagnostic Leakage Current D1 / D2 =H @ 0 < Vdg < V

I

dglk

> V

out

, Vos = 2.5V 2 4 mA

oth1

Vs – Vos @ Ios = 2mA;
T

= -25 to 85°C

amb

V

< V

out

V

= 18 to 35V

S

D1 / D2 = L @ I

, Vos = 0V

oth2

= 0.5mA

diag

= 3mA

diag

5V

25 µA

250

1.5

s

25 µA

VS = 15.6 to 35V

V

5/6-3 Clamping Diodes at the

fdg

@ I

= 5mA; D1 / D2 = H 2 V

diag

Diagnostic Outputs.
Voltage Drop to V

Note

Vil

< 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference.

All test not dissipative.

S

mA
mA

mV
mV

KΩ
KΩ

µA

µA
µA

µA

mV

V

3/12

TDE1897C - TDE1898C

SOURCE DRAIN NDMOS DIODE

Symbol Parameter Test Condition Min. Typ. Max. Unit

2-3 Forward On Voltage @ I

V

fsd

2-3 Forward Peak Current t = 10ms; d = 20% 2 A

I

fp

t

2-3 Reverse Recovery Time If = 625mA di/dt = 25A/µs 200 ns

rr

2-3 Forward Recovery Time 50 ns

t

fr

THERMAL CHARACTERISTICS (*)

Θ Lim Junction Temp. Protect. 135 150 °C

T

H

SWITCHING CHARACTERISTICS

Thermal Hysteresis 30 °C

= 24V; RL = 48Ω) (*)

(V

S

= 625mA 1 1.5 V

fsd

t

on

t

off

t

d

Turn on Delay Time 100 µs
Turn off Delay Time 20 µs
Input Switching to Diagnostic

100 µs

Valid

Note

Vil

< 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference. (*) Not tested.

Figure 1

DIAGNOSTIC TRUTH TABLE

Diagnostic Conditions Input Output Diag1 Diag2

Normal Operation L

H

< I

Open Load Condition (I

)L

o

old

H

Short to V

L

S

H

Short Circuit to Ground (I
TDE1898C

= ISC) (**) TDE1897C

O

H <H (*) H L
HH

Output DMOS Open L

H

Overtemperature L

H

Supply Undervoltage (V
ply voltage; V

(*) According to the intervention of the current limiting block.
(**) A cold lamp filament, or a capacitive load may activate the current limiting circuit of the IPS, when the IPS is initially turned on. TDE1897

uses Diag2 to signal such condition, TDE1898 does not.

S

< V

< V

S

in the rising phase of the supply voltage)

sth2

in the falling phase of the sup-

sth1

L

H

L

H

L

H
H

H

L
L

L
L

L
L

L

H
H

H

L
L

L

H
H

H

L

H
H

L
L

H
H

H
H

H
H

H
H

H
H

L
L

L
L

4/12

TDE1897C - TDE1898C

APPLICATION IN FOR MATION

DEMAGNETIZATION OF INDUCTIVE LOADS
An internal zener diode, limiting the voltage

across the Power MOS to between 45 and 55V

), provides safe and fast demagnetization of

(V

cl

inductive loads without external clamping devices.
The maximum energy that can be absorbed from

an inductive load is specified as 200mJ (at

= 85°C).

T

j

To define the maximum switching frequency three
points have to be considered:

1) The total power dissipation is the sum of the
On State Power and of the Demagnetization
Energy multiplied by the frequency.

2) The total energy W dissipated in the device
during a demagnetization cycle (figg. 2, 3) is:

W = V

V

L

[Io –

cl

R

L

cl

R

– V

L

s

log





1 +

V

s

Vcl – V



]



s



Where:
V

= clamp voltage;

cl

L = inductive load;

= resistive load;

R

L

Vs = supply voltage;

= I

I

O

LOAD

3) In normal conditions the operating Junction
temperature should remain below 125°C.

Figure 3:

Demagnetization Cycle Waveforms

Figure 2:

Inductive Load Equivalent Circuit

Figure 4:

α

1.8

1.6

1.4

1.2

1.0

0.8

0.6

Normalized R

vs. Junction

DSON

Temperature

D93IN018

RDSON (Tj)

α=

RDSON (Tj=25˚C)

-25 0 25 50 75 100 125 Tj (˚C)

5/12

TDE1897C - TDE1898C

WORST CONDITION POWER DISSIPATION IN
THE ON-S TA T E

In IPS applications the maximum average power
dissipation occurs when the device stays for a
long time in the ON state. In such a situation the
internal temperature depends on delivered cur­rent (and related power), thermal characteristics
of the package and ambient temperature.

At ambient temperature close to upper limit
(+85°C) and in the worst operating conditions, it is
possible that the chip temperature could increase
so much to make the thermal shutdown proce­dure untimely intervene.

Our aim is to find the maximum current the IPS
can withstand in the ON state without thermal
shutdown intervention, related to ambient tem­perature. To this end, we should consider the fol­lowing points:

1) The ON resistance R

of the output

DSON

NDMOS (the real switch) of the device in­creases with its temperature.
Experimental results show that silicon resistiv­ity increases with temperature at a constant
rate, rising of 60% from 25°C to 125°C.
The relationship between R

DSON

and tem-

perature is therefore:

R

DSON

= R

DSON0

( 1

+ k )

(

T

− 25

j

)

where:

Tj is the silicon temperature in °C

DSON0

is R

R
k is the constant rate (k = 4.711 ⋅

DSON

at Tj=25°C

10

−

3

)

(see fig. 4).

the third element are constant, while the first
one increases with temperature because

increases as well.

R

DSON

3) The chip temperature must not exceed ΘLim
in order do not lose the control of the device.
The heat dissipation path is represented by
the thermal resistance of the system device­board-ambient (R

). In steady state condi-

th

tions, this parameter relates the power dissi­pated P
the ambient temperature T

T

to the silicon temperature Tj and

− T

j

on

= P on ⋅ R

amb

th

:

amb

(2)

From this relationship, the maximum power

which can be dissipated without exceed-

P

on

ing ΘLim at a given ambient temperature

is:

T

amb

Θ

P

on

=

Lim − T

R

amb

th

Replacing the expression (1) in this equation
and solving for I

, we can find the maximum

out

current versus ambient temperature relation­ship:

Θ

−

Lim

T

I

R

√

outx

=

th

amb

R

DSONx

− P q − P

os

2) In the ON state the power dissipated in the
device is due to three contributes:

a) power lost in the switch:

= I

P

out

out

2 ⋅ R

DSON

(I

is the output cur-

out

rent);

b) power due to quiescent current in the ON

state Iq, sunk by the device in addition to

: P q = I q ⋅ V

I

out

(Vs is the supply voltage);

s

c) an external LED could be used to visualize

the switch state (OUTPUT STATUS pin).
Such a LED is driven by an internal current
source (delivering I

) and therefore, if Vos is

os

the voltage drop across the LED, the dissi-

)

pated power is: P

= I os ⋅ ( V s − V

os

.

os

Thus the total ON state power consumption is
given by:

P

on

= P

+ P q + P os (1)

out

In the right side of equation 1, the second and

6/12

where R
course, I
maximum operative current I

x is R

DSON

values are top limited by the

outx

at Tj=ΘLim. Of

DSON

outx

(500mA
nominal).
From the expression (2) we can also find the
maximum ambient temperature T
a given power P

T

amb

Lim −

(

I

out

= Θ

can be dissipated:

on

= ΘLim − P

2 ⋅ R

DSONx

⋅

R th

on

+

P q + P os ) ⋅ R

at which

amb

=

th

In particular, this relation is useful to find the
maximum ambient temperature T
which I

T

ambx

+

can be delivered:

outx

= ΘLim − ( I

P

+ P

q

os

2 ⋅ R

outx

) ⋅

R

(4)

th

DSONx

+

ambx

at

Referring to application circuit in fig. 5, let us con­sider the worst case:

- The supply voltage is at maximum value of in­dustrial bus (30V instead of the 24V nominal
value). This means also that I

rises of 25%

outx

TDE1897C - TDE1898C

(625mA instead of 500mA).

- All electrical parameters of the device, con­cerning the calculation, are at maximum val­ues.

- Thermal shutdown threshold is at minimum
value.

- No heat sink nor air circulation (R

thj-amb

).

R

equal to

th

Therefore:
V

= 30V, R

s

= 2.5V, ΘLim = 135°C

V

os

R

= 100°C/W (Minidip); 90°C/W (SO20);

thj-amb

= 0.6Ω, Iq = 6mA, I

DSON0

= 4mA @

os

70°C/W (SIP9)

It follows:
I

= 0.625mA, R

outx

= 1.006Ω, Pq = 180mW,

DSONx

Pos = 110mW

Figure 5:

Application Circuit.

From equation 4, we can find:

T

= 66.7°C (Minidip);

ambx

73.5°C (SO20) ;

87.2°C (SIP9).

Therefore, the IPS TDE1897/1898, although
guaranteed to operate up to 85°C ambient tem­perature, if used in the worst conditions, can meet
some limitations.

SIP9 package, which has the lowest R

thj-amb

, can
work at maximum operative current over the en­tire ambient temperature range in the worst condi­tions too. For other packages, it is necessary to
consider some reductions.

With the aid of equation 3, we can draw a derat­ing curve giving the maximum current allowable
versus ambient temperature. The diagrams, com­puted using parameter values above given, are
depicted in figg. 6 to 8.

If an increase of the operating area is needed,
heat dissipation must be improved (R

reduced)

th

e.g. by means of air cooling.

DC BUS 24V +/-25%

µP POLLING

D93IN014

+IN

-IN

D1
D2

+Vs

+

-

CONTROL

LOGIC

OUTPUT STATUSGND

Ios

OUTPUT

LOAD

7/12

TDE1897C - TDE1898C

Figure 6:

(mA)

600

500

400

300

200

100

Figure 8:

(mA)

Max. Output Current vs. Ambient

Temperature (Minidip Package,
R

0

0 20406080100(°C)

th j-amb

= 100°C/W)

Max. Output Current vs. Ambient

Temperature (SIP9 Package,
R

th j-amb

= 70°C/W)

D93IN015

D93IN017

Figure 7:

(mA)

600

500

400

300

200

100

Max. Output Current vs. Ambient

Temperature (SO20 Package,
R

0

0 20 40 60 80 100 (˚C)

th j-amb

= 90°C/W)

D93IN016

600

500

400

300

200

100

0

0 20 40 60 80 100 (˚C)

8/12

TDE1897C - TDE1898C

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 3.32 0.131

a1 0.51 0.020

B 1.15 1.65 0.045 0.065

b 0.356 0.55 0.014 0.022

b1 0.204 0.304 0.008 0.012

D 10.92 0.430

E 7.95 9.75 0.313 0.384

e2.54 0.100

e3 7.62 0.300

e4 7.62 0.300

F 6.6 0.260

I 5.08 0.200

L 3.18 3.81 0.125 0.150

OUTLINE AND

MECHANICAL DATA

Minidip

Z 1.52 0.060

9/12

TDE1897C - TDE1898C

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 7.1 0.280

a1 2.7 3 0.106 0.118

B230.90

B3 24.8 0.976

b1 0.5 0.020
b3 0.85 1.6 0.033 0.063

C 3.3 0.130
c1 0.43 0.017
c2 1.32 0.052

D 21.2 0.835
d1 14.5 0.571

e 2.54 0.100

e3 20.32 0.800

L 3.1 0.122
L1 3 0.118
L2 17.6 0.693
L3 0.25 0.010
L4 17.4 17.85 0.685 0,702

M 3 .2 0.126

N 1 0.039
P 0.15 0.006

mm inch

OUTLINE AND

MECHANICAL DATA

SIP9

L4

L2

P

La1

D

L1

M

19

e3

B

B3

C

L3

N

c2

d1

A

b1

b3

ec1

SIP9

10/12

TDE1897C - TDE1898C

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.35 2.65 0.093 0.104

A1 0.1 0.3 0.004 0.012

B 0.33 0.51 0.013 0.020

C 0.23 0.32 0.009 0.013

D 12.6 13 0.496 0.512

E 7.4 7.6 0.291 0.299

e 1.27 0.050

H 10 10.65 0.394 0.419

h 0.25 0.75 0.010 0.030

L 0.4 1.27 0.016 0.050

K 0˚ (m in.)8˚ (max.)

mm inch

OUTLINE AND

MECHANICAL DATA

SO20

B

e

D

1120

110

L

h x 45˚

A

K

A1

C

H

E

SO20MEC

11/12

TDE1897C - TDE1898C

Information furnishe d is beli eved to be accu rate and reliable. However, STMicroelec tronics assumes no res ponsibility for the consequences
of use of such i nformation nor for any i nfringement of patents or ot her rights of third par ties which may result from its use. No license i s
granted by imp lication or otherwi se under a ny patent or patent rights of STMicro electronics . Speci fications ment ioned in this publicat ion are
subject to change without notic e. This public ation supers edes and replaces all information prev iously supplied. STMic roelec tronic s products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelect roni cs.

All other names are the property of their respective owners

© 2003 STMicroelectronic s - All rights rese rved

Australia – Belgium - Brazi l - Canada - China – Czec h Republ i c - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States

STMicroelectronics GROUP OF COMPANIES

www.st.com

12/12