Datasheet TDE1891V, TDE1891L, TDE1890V, TDE1890D Datasheet (SGS Thomson Microelectronics)

TDE1890



INDUSTRIALINTELLIGENT POWER SWITCH

2A OUTPUT CURRENT
18V TO35V SUPPLY VOLTAGE RANGE
INTERNALCURRENT LIMITING
THERMALSHUTDOWN
OPENGROUNDPROTECTION
INTERNALNEGATIVE VOLTAGE CLAMPING

TOV
DIFFERENTIAL INPUTS WITH LARGE COM-

MON MODE RANGE AND THRESHOLD
HYSTERESIS

UNDERVOLTAGELOCKOUTWITHHYSTERESIS
OPENLOAD DETECTION
TWODIAGNOST ICOUTPU TS
OUTPUTSTATUSLEDDRIVER

DESCRIPTION

The TDE1890/1891 is a monolithic Intelligent
Power Switch in Multipower BCD Technology, for

BLOCK DIAGRAM

- 50VFOR FASTDEMAGNETIZATION

S

TDE1891

2A HIGH-SIDE DRIVER

MULTIPOWER BCD TECHNOLOGY

MULTIWATT11 MULTIWATT11V PowerSO20

(In line)

ORDERING NUMBERS:

TDE1891L TDE1890V TDE1890D

TDE1891V

driving inductive or resistive loads. An internal
ClampingDiode enablesthe fast demagnetization
of inductiveloads.
Diagnostic for CPU feedback and extensive use
of electrical protections make this device ex­tremely rugged and specially suitable for indus­trial automationapplications.

July 1998

1/12

TDE1890 - TDE1891

PIN CONNECTION (Topview)

11
10

9
8
7
6
5
4
3
2
1

D93IN022

OUTPUT
SUPPLY VOLTAGE
OUTPUT
N.C.
N.C.
GND
OUTPUT STATUS
INPUT ­INPUT +
DIAGNOSTIC 2
DIAGNOSTIC 1

GND
OUTPUT
OUTPUT

N.C.
SUPPLY VOLTAGE
SUPPLY VOLTAGE

N.C.

OUTPUT
OUTPUT N.C.

GND GND

2
3
4
5
6
7
8
9
10

20
19
18
17
16
15
14
13
12
11

GND1
OUTPUT STATUS
INPUT ­INPUT +
N.C.
DIAGNOSTIC 2
DIAGNOSTIC 1
N.C.

D93IN021

Note: Output pins mustbe must be connectedexternally to the package touse allleadsfor the outputcurrent (Pin9 and 11 for Multiwatt

package, Pin 2, 3, 8 and 9 for PowerSO20package).

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

S–VO

V
V

I
P
T

T

E

S

I

O

tot
op
stg

Supply Voltage (Pin 10) (TW< 10ms) 50 V
Supply toOutputDifferential Voltage. Seealso VCl(Pins10 - 9) internally limited V
Input Voltage (Pins 3/4) -10 to VS +10 V

i

Differential Input Voltage (Pins 3 - 4) 43 V

i

Input Current (Pins 3/4) 20 mA

i

Output Current(Pin 9). See also ISC (Pin 9) internally limited A
Power Dissipation.See also THERMAL CHARACTERISTICS. internally limited W
Operating Temperature Range (T

) -25 to +85 °C

amb

Storage Temperature -55 to 150 °C
Energy Induct.Load TJ=85°C1J

I

THERMAL DATA

Symbol Description Multiwatt PowerSO20 Unit

Thermal Resistance Junction-case Max. 1.5 1.5 ÉC/W
Thermal Resistance Junction-ambient Max. 35 – ÉC/W

2/12

R

th j-case

R

th j-amb

TDE1890 - TDE1891

ELECTRICALCHARACTERISTICS (VS= 24V; T

= –25 to +85°C, unlessotherwisespecified)

amb

Symbol Parameter Test Condition Min. Typ. Max. Unit

V

smin

Supply Voltage for Valid

I

> 0.5mA ; V

diag

= 1.5V 9 35 V

dg1

Diagnostics

V

s

I

q

V

sth1

V

sth2

V

shys

I

sc

V

don

I

oslk

V

ol

V

cl

Supply Voltage (operative) 18 24 35 V
Quiescent Current

I

out=Ios

=0

V
V

il
ih

3
5

7

8
Undervoltage Threshold 1 (See fig. 1),Tamb = 0 to +85°C11 V
Undervoltage Threshold 2 15.5 V
Supply Voltage Hysteresis 1 V
Short Circuit Current VS= 18 to 35V; RL=2Ω 2.6 5 A
Output VoltageDrop Iout = 2.0A Tj=25°C

T

= 125°C

I

= 2.5A Tj=25°C

out

j

T

= 125°C

j

360
575
440
700

500
800
575

920
Output LeakageCurrent Vi=Vil;Vo= 0V 500 µA
Low State Out Voltage Vi=Vil;RL=
Internal Voltage Clamp (VS-VO)IO=1A

∞

48 53 58 V

0.8 1.5 V

Single Pulsed: Tp = 300µs

I

old

V

id

I

ib

V

ith

V

iths

Open Load Detection Current Vi=Vih;T
Common Mode Input Voltage

Range (Operative)

VS= 18 to 35V,
V

S-Vid

= 0 to +85°C 0.5 9.5 mA

amb

–7 15 V

< 37V
Input Bias Current Vi= –7 to 15V;–In = 0V –250 250 µA
Input Threshold Voltage V+In > V–In 0.8 1.4 2 V
Input Threshold Hysteresis

V+In > V–In 50 400 mV

Voltage

R

id

I

ilk

V

oth1

Diff. Input Resistance 0 < +In < +16V; –In = 0V

–7 < +In < 0V ; –In = 0V

Input Offset Current V+In = V–In +Ii

0V < V

<5.5V –Ii

i

–In = GND +Ii
0V < V+In <5.5V –Ii –250

+In = GND +Ii
0V < V–In <5.5V –Ii

Output StatusThreshold 1

(See fig. 1) 11.5 V

400
150

–20
–75 –25

+10

–125

–100

–50

–30
–15

+20 µA

+50 µA

Voltage

V

oth2

Output StatusThreshold 2

(See fig. 1) 8.5 V

Voltage

V

ohys

Output StatusThreshold

(See fig. 1) 0.7 V

Hysteresis

I

osd

V

osd

I

oslk

V

dgl

I

dglk

Output StatusSource Current V
Active Output Status Driver

Drop Voltage
Output StatusDriver Leakage

Current

out>Voth1;Vos

VS – Vos;Ios= 2mA
T

= -25 to +85°C

amb

V

out<Voth2;Vos

V

= 18 to 35V

S

Diagnostic Drop Voltage D1 / D2 = L ; I

D1/D2=L; I

= 2.5V 2 4 mA

=0V

= 0.5mA

diag

= 3mA

diag

Diagnostic Leakage Current D1 / D2 =H ; 0 < Vdg < V

5V

25 µA

250

1.5

s

25 µA

VS= 15.6 to 35V

V

fdg

Clamping Diodes at the

Idiag = 5mA; D1 / D2 = H 2 V
Diagnostic Outputs.
Voltage Drop to V

Note Vil< 0.8V, Vih> 2V @ (V+In > V–In)

S

mA
mA

mV
mV
mV
mV

KΩ
KΩ

µ

µA
µA

µ

mV

V

A

A

3/12

TDE1890 - TDE1891

SOURCEDRAIN NDMOS DIODE

Symbol Parameter Test Condition Min. Typ. Max. Unit

V

fsd

I

fp

t

rr

t

fr

THERMALCHARACTERISTICS

Ø Lim Junction Temp. Protect. 135 150 °C

T

H

SWITCHING CHARACTERISTICS (VS= 24V; RL=12Ω)

Forward On Voltage @ Ifsd = 2.5A 1 1.5 V
Forward Peak Current t = 10ms; d = 20% 6 A
Reverse Recovery Time If = 2.5A di/dt = 25A/µs 200 ns
Forward Recovery Time 100 ns

Thermal Hysteresis 30 °C

t

on

t

off

t

d

Turn on Delay Time 200 µs
Turn off Delay Time 40 µs
Input Switchingto Diagnostic

200 µs

Valid

Note Vil < 0.8V, Vih > 2V@ (V+In> V–In)

Figure 1

TRUE
FALSE

HIGH
LOW

DIAGNOSTICTRUTHTABLE

Diagnostic Conditions Input Output Diag1 Diag2

Normal Operation L

H

Open Load Condition (I

)L

o<Iold

H

Short to V

S

L

H

Short Circuit to Ground (I

) (**) TDE1891

O=ISC

TDE1890

H <H (*) H L
HH

Output DMOS Open L

H

Overtemperature L

H

Supply Undervoltage (V

S<Vsth2

)L

H

(*) According to theintervention of the current limitingblock.
(**) A cold lampfilament,or a capacitiveload may activate the current limiting circuit of the IPS, when the IPSis initially turned on. TDE1891

uses Diag2 to signal such condition, TDE1890 does not.

L

H

L

H
H

H

L
L

L
L

L
L

L

H
H

H

L
L

L

H
H

H

L

H
H

L
L

H
H

H
H

H
H

H
H

H
H

L
L

L
L

4/12

TDE1890 - TDE1891

APPLICATIONINFORMATION

DEMAGNETIZATION OF INDUCTIVE LOADS
An internal zener diode, limiting the voltage

across the Power MOS to between 50 and 60V
(V

), provides safe and fast demagnetization of

cl

inductiveloads without externalclamping devices.
The maximum energy that can be absorbed from

an inductive load is specified as 1J (at
T

=85°C).

j

To define the maximumswitching frequencythree
points haveto be considered:

1) The total power dissipation is the sum of the
On State Power and of the Demagnetization
Energy multiplied by the frequency.

2) The total energy W dissipated in the device
during a demagnetizationcycle(figg.2, 3) is:

W=V

L

[Io–

V

cl–Vs

R



log

L




L

cl

R

1

+

Vcl–V

V



s

]



s



Where:

= clampvoltage;

V

cl

L = inductiveload;

=resistiveload;

R

L

Vs = supply voltage;
I

O=ILOAD

3) In normal conditions the operating Junction
temperatureshouldremain below 125°C.

If the demagnetization energy exceeds the rated
value, an externalclamp between output and +V
must be externallyconnected(see fig. 5).

The external zener will be chosen with V

zener

value lower than the internal Vclminimum rated
value and significantly (at least 10V) higher than
the voltage that is externally supplied to pin 10,
i.e. than the supplyvoltage.

Alternative circuit solutions can be implemented
to divert the demagnetization stress from the
TDE1890/1, if it exceeds 1J. In all cases it is rec­ommended that at least 10V are available to de­magnetizethe loadin the turn-offphase.

A clampingcircuitconnected between ground and
the output pin is not recommended. An interrup­tion of the connection between the ground of the
load and the ground of the TDE1890/1 would
leave the TDE1890/1 alone to absorb the full
amountof the demagnetizationenergy.

S

Figure 2: InductiveLoad EquivalentCircuit

5/12

TDE1890 - TDE1891

Figure 3: DemagnetizationCycle Waveforms

Figure4: NormalizedR

Temperature

α

1.8
RDSON (Tj)

α=

1.6

1.4

1.2

1.0

0.8

0.6

-25 0 25 50 75 100 125 Tj (°C)

RDSON (Tj=25°C)

DSON

vs. Junction

D93IN018

Figure 5.

6/12

TDE1890 - TDE1891

WORST CONDITION POWER DISSIPATION IN
THE ON-STATE

In IPS applications the maximum average power
dissipation occurs when the device stays for a
long time in the ON state. In such a situation the
internal temperature depends on delivered cur­rent (and related power), thermal characteristics
of the packageandambient temperature.

At ambient temperature close to upper limit
(+85°C) and in the worstoperating conditions, it is
possible that the chip temperature could increase
so much to make the thermal shutdown proce­dure untimelyintervene.

Our aim is to find the maximum current the IPS
can withstand in the ON state without thermal
shutdown intervention, related to ambient tem­perature. To this end, we should consider the fol­lowing points:

1) The ON resistance R

DSON

of the output
NDMOS (the real switch) of the device in­creaseswithits temperature.
Experimentalresults show that silicon resistiv­ity increases with temperature at a constant
rate,rising of 60% from 25°C to 125°C.
The relationship between R

DSON

and tem-

peratureis therefore:

R

DSON

=

R

DSON0

( 1 +k)

( Tj− 25 )

where:

T

isthe silicon temperaturein °C

j

DSON0

is R

R
k isthe constantrate (k=4.711

DSON

atTj=25°C

−3

⋅

10

)

(seefig. 4).

the third element are constant, while the first
one increases with temperature because
R

increasesas well.

DSON

3) The chip temperature must not exceed ΘLim
in order do not lose the control of the device.
The heat dissipation path is represented by
the thermal resistance of the system device­ambient (R
parameter relates the power dissipated P
the silicon temperature T
temperatureT

− T

T

j

). In steady state conditions, this

th

and the ambient

j

th

amb

:

amb

= Pon⋅ R

on

(2)

From this relationship, the maximum power

which can be dissipated without exceed-

P

on

ing ΘLim at a given ambient temperature
T

is:

amb

Θ

Lim−T

=

P

on

amb

R

th

Replacing the expression (1) in this equation
and solving for I

, we can find the maximum

out

current versus ambient temperature relation­ship:

Θ

I

Lim−T

√

=

outx

amb

R

− Pq−P

DSONx

R

th

os

to

2) In the ON state the power dissipated in the
deviceis due to three contributes:

a) power lost in the switch:

P

out

2

=

⋅

out

R

I

DSON

(I

is the outputcur-

out

rent);

b) power due to quiescentcurrentin the ON

state Iq, sunk by the devicein addition to

=

:P

I

out

⋅

I

q

(Vsisthe supplyvoltage);

V

q

s

c) an external LED could be usedto visualize

the switch state (OUTPUT STATUSpin).
Such a LED is drivenby an internalcurrent
source(deliveringI

) and therefore, if Vosis

os

the voltage drop across the LED, the dissi-

=

⋅(

−

)

pated power is: P

I

os

V

s

os

.

V

os

Thus the total ON state power consumptionis
given by:

P

on

= P

+ Pq+ P

out

os

(1)

In the right sideof equation1, the second and

where R
course, I
maximumoperativecurrent I

xisR

DSON

values are top limited by the

outx

at Tj=ΘLim. Of

DSON

outx

(2Anominal).
From the expression (2) we can also find the
maximum ambient temperature T
a givenpower P

T

amb

=ΘLim−

(I

out

canbe dissipated:

on

=ΘLim−Pon⋅ Rth=

2

⋅ R

+ Pq+ Pos) ⋅ R

DSONx

amb

at which

th

In particular, this relation is useful to find the
maximum ambient temperature T
whichI

T

ambx

+ P

can be delivered:

outx

=ΘLim −(I
+ Pos) ⋅ R

q

th

outx

2

⋅ R

DSONx

+

(4)

ambx

at

Referring to application circuit in fig. 6, let us con­sider the worst case:

- The supply voltage is at maximum value of in­dustrial bus (30V instead of the 24V nominal
value). This means also that I

risesof 25%

outx

(2.5A instead of 2A).

7/12

TDE1890 - TDE1891

- All electricalparametersof the device, con­cerningthe calculation,areat maximumval­ues.

- Thermal shutdownthresholdis at minimum
value.

Therefore:
V

= 30V, R

s

@V
R

thj-amb

= 2.5V, ΘLim = 135°C

os

=35°C/W

= 0.23Ω,Iq= 8mA, Ios= 4mA

DSON0

Figure 6: ApplicationCircuit

DC BUS 24V +/-25%

+IN

-IN

µP POLLING

D1
D2

It follows:
I

outx

P

= 110mW

os

= 2.5A,R

= 0.386Ω,Pq= 240mW,

DSONx

From equation 4 we can see that, without any
heatsink, it is not possible to operate in the ON
steady state at the maximum current value. A
derating curve for this case is reported in fig. 7.
Usingan external heatsink,in order to obtain a to­tal R

of 15°C/W, we obtain the derating curve

th

reportedin fig. 8.

+Vs

+

-

CONTROL

LOGIC

Ios

OUTPUT

LOAD

D93IN014

Figure 7: Max. OutputCurrentvs. Ambient

Temperature(Multiwatt without

(A)

2.5

2.0

1.5

1.0

0.5

Io

heatsink,R

th j-amb

=35°C/W)

D93IN033

OUTPUT STATUSGND

Figure8: Max. OutputCurrent vs. Ambient

Temperature(Multiwattwith heatsink,

=15°C/W)

D93IN020A

(A)

2.5

2.0

1.5

1.0

0.5

R

th j-amb

Io

8/12

0.0
0 20406080100120

0.0

T

(°C)

amb

0 20 40 60 80 100 120

T

amb

(°C)

MULTIWATT11 (Vertical) PACKAGE MECHANICAL DATA

TDE1890 - TDE1891

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 5 0.197
B 2.65 0.104
C 1.6 0.063
D 1 0.039
E 0.49 0.55 0.019 0.022

F 0.88 0.95 0.035 0.037

G 1.45 1.7 1.95 0.057 0.067 0.077
G1 16.75 17 17.25 0.659 0.669 0.679
H1 19.6 0.772
H2 20.2 0.795

L 21.9 22.2 22.5 0.862 0.874 0.886
L1 21.7 22.1 22.5 0.854 0.87 0.886
L2 17.4 18.1 0.685 0.713
L3 17.25 17.5 17.75 0.679 0.689 0.699
L4 10.3 10.7 10.9 0.406 0.421 0.429
L7 2.65 2.9 0.104 0.114

M 4.25 4.55 4.85 0.167 0.179 0.191

M1 4.73 5.08 5.43 0.186 0.200 0.214

S 1.9 2.6 0.075 0.102

S1 1.9 2.6 0.075 0.102

Dia1 3.65 3.85 0.144 0.152

mm inch

9/12

TDE1890 - TDE1891

MULTIWATT11 (In line) PACKAGE MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 5 0.197
B 2.65 0.104
C 1.6 0.063
E 0.49 0.55 0.019 0.022

F 0.88 0.95 0.035 0.037

G 1.57 1.7 1.83 0.062 0.067 0.072
G1 16.87 17 17.13 0.664 0.669 0.674
H1 19.6 0.772
H2 20.2 0.795

L 26.4 26.9 1.039 1.059
L1 22.35 22.85 0.880 0.900
L3 17.25 17.5 17.75 0.679 0.689 0.699
L4 10.3 10.7 10.9 0.406 0.421 0.429
L7 2.65 2.9 0.104 0.114

S 1.9 2.6 0.075 0.102

S1 1.9 2.6 0.075 0.102

Dia1 3.65 3.85 0.144 0.152

mm inch

10/12

PowerSO20PACKAGE MECHANICAL DATA

TDE1890 - TDE1891

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 3.6 0.142
a1 0.1 0.3 0.004 0.012
a2 3.3 0.130
a3 0 0.1 0.000 0.004

b 0.4 0.53 0.016 0.021
c 0.23 0.32 0.009 0.013

D (1) 15.8 16 0.622 0.630

D1 9.4 9.8 0.370 0.386

E 13.9 14.5 0.547 0.570

e 1.27 0.050

e3 11.43 0.450

E1 (1) 10.9 11.1 0.429 0.437

E2 2.9 0.114
E3 5.8 6.2 0.228 0.244

G 0 0.1 0.000 0.004

H 15.5 15.9 0.610 0.626

h 1.1 0.043

L 0.8 1.1 0.031 0.043
N10°(max.)
S8°(max)

T 10 0.394

(1) ”D and F” do not include mold flash or protrusions.

- Moldflash or protrusionsshall not exceed 0.15mm (0.006”).

- Criticaldimensions: ”E”, ”G” and ”a3”

NN

a2

b

E2

hx45°

DETAIL A

e3

H

D

T

110

e

1120

A

E1

DETAIL B

PSO20MEC

R

lead

a3

Gage Plane

BOTTOM VIEW

E

DETAIL B

0.35

S

D1

a1

L

DETAIL A

slug

(COPLANARITY)

E3

c

-C-

SEATING PLANE

GC

11/12

TDE1890 - TDE1891

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as criticalcomponents in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

MULTIWATTis a RegisteredTrademark of STMicroelectronics

PowerSO20 is a Trademark of STMicroelectronics

 1998 STMicroelectronics – Printed in Italy – AllRights Reserved

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12/12