Datasheet TDA6103Q-N3, TDA6103Q-N1 Datasheet (Philips)

Page 1
DATA SH EET
Preliminary specification File under Integrated Circuits, IC02
March 1994
INTEGRATED CIRCUITS
Philips Semiconductors
TDA6103Q
Page 2
March 1994 2
Philips Semiconductors Preliminary specification
Triple video output amplifier TDA6103Q
FEATURES
High bandwidth: 7.5 MHz typical; 60 V (peak-to-peak value)
High slew rate: 1600 V/µs
Simple application with a variety of colour decoders
Only one supply voltage needed
Internal protection against positive appearing
Cathode-Ray Tube (CRT) flashover discharges
One non-inverting input with a low minimum input voltage of 1 V
Thermal protection
Controllable switch-off behaviour.
GENERAL DESCRIPTION
The TDA6103Q includes three video output amplifiers in one single in-line 9-pin medium power (SIL9MP) package SOT111BE, using high-voltage DMOS technology, intended to drive the three cathodes of a colour CRT.
ORDERING INFORMATION
BLOCK DIAGRAM
EXTENDED TYPE
NUMBER
PACKAGE
PINS PIN POSITION MATERIAL CODE
TDA6103Q 9 DBS9 plastic SOT111BE
Fig.1 Block diagram (one amplifier shown).
FLASH-
DIODE
MIRROR 3
LEVEL-
SHIFTER 1
DIFFERENTIAL
STAGE
V
DD
1x
THERMAL
PROTECTION
V
DD
V
bias
CURRENT SOURCES
MIRROR 2
V
DD
MIRROR 1
LEVEL-
SHIFTER 2
9,8,7
1,2,3
V
DD
V
DD
inverting
input
(3x)
V
oc
(3x)
non-inverting
input
V
ip
5
4
6
V
DD
GND
MGA968
3x
TDA6103Q
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March 1994 3
Philips Semiconductors Preliminary specification
Triple video output amplifier TDA6103Q
PINNING
SYMBOL PIN DESCRIPTION
V
i1
1 inverting input 1
V
i2
2 inverting input 2
V
i3
3 inverting input 3 GND 4 ground, fin V
ip
5 non-inverting input V
DD
6 supply voltage V
oc3
7 cathode output 3 V
oc2
8 cathode output 2 V
oc1
9 cathode output 1
Fig.2 Pin configuration.
1 2 3 4 5 6 7 8 9
MGA969
V
i1
GND
V
DD
V
oc3
TDA6103Q
V
i2
V
i3
V
oc2
V
oc1
V
ip
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134). Voltages measured with respect to GND (pin 4); currents as specified in Fig.1; unless otherwise specified.
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take normal precautions appropriate to handling MOS devices (see
“Handling MOS Devices”
).
QUALITY SPECIFICATION
Quality specification
“SNW-FQ-611 part E”
is applicable and can be found in the
“Quality reference pocketbook”
(ordering
number 9398 510 34011).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DD
supply voltage 0 250 V V
i
input voltage 0 12 V V
idm
differential mode input voltage 6+6V V
oc
cathode output voltage 0 V
DD
V
I
ocsmL
LOW non-repetitive peak cathode
output current
flashover discharge = 50 µC05A
I
ocsmH
HIGH non-repetitive peak cathode
output current
flashover discharge = 100 nC 0 10 A
T
stg
storage temperature 55 +150 °C T
j
junction temperature 20 +150 °C V
es
electrostatic handling
human body model (HBM) tbf V machine model (MM) tbf V
Page 4
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Philips Semiconductors Preliminary specification
Triple video output amplifier TDA6103Q
THERMAL RESISTANCE
Note
1. An external heatsink is necessary.
SYMBOL PARAMETER THERMAL RESISTANCE
R
th j-fin
from junction to fin; note 1 11 K/W
R
th h-a
from heatsink to ambient 18 K/W
Fig.3 Power derating curves.
(1) Infinite heatsink. (2) No heatsink.
0 50 100–50
2
0
MGA972
150
P
tot
(W)
4
6
T ( C)
o
amb
(1)
(2)
1
3
5
Thermal protection
The internal thermal protection circuit gives a decrease of the slew rate at high temperatures: 10% decrease at 130 °C and 30% decrease at 145 °C (typical values on the spot of the thermal protection circuit).
Fig.4 Equivalent thermal resistance network.
Thermal protection circuit
5 K/W
6 K/W
OUTPUTS
FIN
MGA970
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Philips Semiconductors Preliminary specification
Triple video output amplifier TDA6103Q
CHARACTERISTICS
Operating range: T
j
= 20 to 150 °C; VDD = 180 to 210 V; Vip = 1 to 4 V.
Test conditions (unless otherwise specified): T
amb
= 25 °C; VDD = 200 V; Vip = 1.3 V; V
oc1
= V
oc2
= V
oc3
=1⁄2VDD;
C
L
= 10 pF (CL consists of parasitic and cathode capacitance); R
th h-a
= 18 K/W; measured in test circuit Fig.5.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DD
quiescent supply current 7.0 9.25 11.5 mA
I
bias
input bias current inverting inputs (pins 1, 2 and 3)
5 1+1µA
I
bias
input bias current non-inverting input (pin 5)
15 3+1µA
V
i(offset)
input offset voltage (pins 1, 2 and 3)
50 +50 mV
V
i(offset)
differential input offset voltage temperature drift between pins 1 and 5; 2 and 5; 3 and 5
tbf mV/K
C
icm
common-mode input capacitance (pins 1, 2 and 3)
5 pF
C
icm
common-mode input capacitance (pin 5)
10 pF
C
idm
differential mode input capacitance between 1 and 5; 2 and 5; 3 and 5
1 pF
V
oc(min)
minimum output voltage (pins 7, 8 and 9)
V
15
= V
25
= V
35
= 1V 510V
V
oc(max)
maximum output voltage (pins 7, 8 and 9)
V
15
= V
25
= V
35
= 1 V;
note 1
VDD− 10 VDD− 6 V
GB gain-bandwidth product of
open-loop gain: V
oc1, 2, 3/Vi1-5, 2-5, 3-5
f = 500 kHz 0.75 GHz
B
S
small signal bandwidth (pins 7, 8 and 9)
V
oc(p-p)
= 60 V 6 7.5 MHz
B
L
large signal bandwidth (pins 7, 8 and 9)
V
oc(p-p)
= 100 V 5 7 MHz
t
pd
cathode output propagation delay time 50% input to 50% output (pins 7, 8 and 9)
V
oc(p-p)
= 100 V square wave; f < 1 MHz; tr=tf= 40 ns (pins 1, 2 and 3); see Figs 7 and 8
38 ns
t
p
difference in cathode output propagation time 50% input to 50% output (pins 7 and 8, 7 and 9 and 8 and 9)
V
oc(p-p)
= 100 V square wave; f < 1 MHz; tr=tf= 40 ns (pins 1, 2 and 3)
10 0 +10 ns
t
r
cathode output rise time 10% output to 90% output (pins 7, 8 and 9)
Voc = 50 to 150 V square wave; f < 1 MHz; tf = 40 ns (pins 1, 2 and 3); see Fig.7
48 60 73 ns
t
f
cathode output fall time 90% output to 10% output (pins 7, 8 and 9)
Vo = 150 to 50 V square wave; f < 1 MHz; tr = 40 ns (pins 1, 2 and 3); see Fig.8
48 60 73 ns
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Philips Semiconductors Preliminary specification
Triple video output amplifier TDA6103Q
Notes
1. See also Fig.6 for the typical low-frequency response of Vi to Voc.
2. The ratio of the change in supply voltage to the change in input voltage when there is no change in output voltage.
t
s
settling time 50% input to (99% < output < 101%)
V
oc(p-p)
= 100 V square wave; f < 1 MHz; tr=tf= 40 ns (pins 1, 2 and 3); see Figs 7 and 8
−−350 ns
SR slew rate between
50Vto(V
DD
50 V); (pins 7, 8 and
9)
V
15
= V
25
= V
35
= 2 V square wave (p-p); f < 1 MHz; tr =tf =40ns (pins 1, 2 and 3)
1600 V/µs
O
v
cathode output voltage overshoot (pins 7, 8 and 9)
V
oc(p-p)
= 100 V square wave; f < 1 MHz; tr=tf= 40 ns (pins 1, 2 and 3); see Figs 7 and 8
5 %
SVRR supply voltage rejection ratio f < 50 kHz; note 2 70 dB
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Cathode output
The cathode output is protected against peak currents (caused by positive voltage peaks during high-resistance flash) of 5 A maximum with a charge content of 50 µC.
The cathode is also protected against peak currents (caused by positive voltage peaks during low-resistance flash) of 10 A maximum with a charge content of 100 nC.
The DC voltage of VDD (pin 6) must be within the operating range of 180 to 210 V during the peak currents.
Flashover protection
The TDA6103Q incorporates protection diodes against CRT flashover discharges that clamp the cathode output voltage up to a maximum of V
DD
+ V
diode
. To limit the diode current, an external 1.5 k carbon high-voltage resistor in series with the cathode output and a 2 kV spark gap are
needed (for this resistor-value, the CRT has to be connected to the main PCB). This addition produces an increase in the rise- and fall times of approximately 5 ns and a decrease in the overshoot of approximately 3%.
V
DD
to GND must be decoupled:
1. With a capacitor >20 nF with good HF behaviour (e.g. foil). This capacitance must be placed as close as possible to pins 6 and 4, but definitely within 5 mm.
2. With a capacitor >10 µF on the picture tube base print.
Switch-off behaviour
The switch-off behaviour of the TDA6103Q is controllable. This is due to the fact that the output pins of the TDA6103Q are still under control of the input pins for relative low-power supply voltages (approximately 30 V and higher).
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March 1994 7
Philips Semiconductors Preliminary specification
Triple video output amplifier TDA6103Q
Test circuit
C
par
=70fF.
100 k
R5
C13
6.8 pF
2 M
R7
TDA6103Q
22 µF
C1
667
R1
C7
22 nF
C2
V
in1
0.987 mA
8.2 pF
V
i1
100 k
R8
C
par
C14 136
pF
C12
3.2 pF
probe 1
V
oc1
C16
6.8 pF
R9
R10
C17 136
pF
C15
3.2 pF
probe 2
V
oc2
C19
6.8 pF
R11
R12
C20 136
pF
C18
3.2 pF
probe 3
V
oc3
22 µF
C3
R2
C8
22 nF
C4
V
in2
0.987 mA
8.2 pF
V
i2
22 µF
C5
667
R3
C9
22 nF
C6
V
in3
0.987 mA
8.2 pF
V
i3
1
2
3
100 k
R4
C
par
1
6
9
8
7
5
3
2
C11 100 nF
R6
C
par
4
100 k
C10 100 nF
1.3 V
V
DD
MGA976
2 M
100 k
2 M
100 k
667
Fig.5 Test circuit with feedback factor1⁄
150
.
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Philips Semiconductors Preliminary specification
Triple video output amplifier TDA6103Q
Fig.6 Typical low-frequency (f < 1 MHz) response of V
i1, 2,3
to V
oc1, 2,3
.
MGA973
0
5
100
200 194
188
1.2 0.633
0
0.583 1.1 1.2
V
oc
V
i
Fig.7 Output voltage (pins 7, 8 and 9) rising edge as a function of the AC input signal.
150 140
100
60 50
151
149
s
t
overshoot (in %)
t
t
0
x
x
t
r
pd
t
V
oc
V
i
MGA974
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Philips Semiconductors Preliminary specification
Triple video output amplifier TDA6103Q
Fig.8 Output voltage (pins 7, 8 and 9) falling edge as a function of the AC input signal.
150 140
100
60 50
51
49
s
t
overshoot (in %)
t
t
0
x
x
t
f
pd
t
V
oc
V
i
MGA975
Page 10
March 1994 10
Philips Semiconductors Preliminary specification
Triple video output amplifier TDA6103Q
TEST AND APPLICATION INFORMATION
MGA977
1.5 k
g1 g2 g3
kR kG kB
R21
1.5 k
R22
1.5 k
R23
EHT
A51EAL . . X02
C7
2.7 nF
(500 V)
C8
2.7 nF (500 V) optional
1.5 k
R26
C9
1 nF
(2000 V)
V
g2 AQUA
X4X2
1 2 3 4
AQUA V
ff
V (GND)
ff
185 V
1
2
3
4
R G B
GND
220 R53.3 k
R9
C3
680
R10
470
R13
TDA6103Q
123456789
100
nF
C5
220 k
R19
R20
100 k
R17
R16
47
R24
C6 10 µF
(250 V)
X1
1.2
R25
100 k
R18
C4 220 nF
R6
3.3 k
R7
C1
680
R12
470
R15
3.3 k
R8
C2
R11
470
R14
470
R4
X3
100 k
1.5 k
470
680
Fig.9 Application diagram.
Page 11
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Philips Semiconductors Preliminary specification
Triple video output amplifier TDA6103Q
Dissipation
Regarding dissipation, distinction must first be made between static dissipation (independent of frequency) and dynamic dissipation (proportional to frequency).
The static dissipation of the TDA6103Q is due to voltage supply currents and load currents in the feedback network and CRT.
The static dissipation equals: P
stat
= VDD× IDD− 3 × Voc× (Voc/Rfb− IOC) Rfb = value of feedback resistor. IOC = DC-value of cathode current.
The dynamic dissipation equals: P
dyn
= 3 × VDD× (CL + Cfb + C
int
) × fi× V
o(p-p)
×δ
CL = load capacitance. Cfb = feedback capacitance. C
int
= internal load capacitance (4 pF). fi = input frequency. V
o(p-p)
= output voltage (peak-to-peak value).
δ = non-blanking duty-cycle.
The IC must be mounted on the picture tube base print to minimize the load capacitance (CL).
(1) All pins have an energy protection for positive or negative overstress situations.
Fig.10 Internal pin configuration.
MGA971
from
input
circuit
V
bias
7,8,9
5
to differential stage
to differential stage
to differential stage
from
input
circuit
1,2,3
to differential stage
TDA6103Q
46
V
DD
GND
(1)
Page 12
March 1994 12
Philips Semiconductors Preliminary specification
Triple video output amplifier TDA6103Q
PACKAGE OUTLINE
Fig.11 Plastic SIL-bent-to-DIL, medium power with fin, 9-pin (SOT111BE).
Dimensions in mm.
MBC376 - 1
0.25
M
(9x)
(8x)
2.54
4.4
4.2
5.9
5.7
8.7
8.0
18.5
17.8
6.48
6.14
1.0
0.3
1.40
1.14
1.0
0.7
0.76
3.9
3.4
seating plane
0.45
0.25
0.67
0.50
1.40
1.14
1.75
1.55
3.85
3.45
3.4
3.2
15.1
14.9
21.4
20.7
22.00
21.35
12 3 4
5
6789
2.75
2.50 (2x)
1.1
0.7
2.54
65 55
o o
0.47
0.38
fin
Page 13
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Philips Semiconductors Preliminary specification
Triple video output amplifier TDA6103Q
SOLDERING Plastic single in-line packages
B
Y DIP OR WAVE
The maximum permissible temperature of the solder is 260 °C; this temperature must not be in contact with the joint for more than 5 s. The total contact time of successive solder waves must not exceed 5 s.
The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified storage maximum. If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit.
R
EPAIRING SOLDERED JOINTS
Apply the soldering iron below the seating plane (or not more than 2 mm above it). If its temperature is below 300 °C, it must not be in contact for more than 10 s; if between 300 and 400 °C, for not more than 5 s.
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Page 14
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Philips Semiconductors Preliminary specification
Triple video output amplifier TDA6103Q
NOTES
Page 15
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Philips Semiconductors Preliminary specification
Triple video output amplifier TDA6103Q
NOTES
Page 16
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