Datasheet TDA5731M-C1 Datasheet (Philips)

Page 1
DATA SH EET
Product specification File under Integrated Circuits, IC02
1995 Mar 21
INTEGRATED CIRCUITS
Philips Semiconductors
TDA5731M
Page 2
1995 Mar 21 2
Philips Semiconductors Product specification
Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners
TDA5731M
FEATURES
Balanced mixer with a common emitter input for band A (single input)
2-pin oscillator for bands A and B
3-pin oscillator for band C
Balanced mixer with a common base input for band B
and C (balanced input)
Local oscillator buffer output for external synthesizer
SAW filter preamplifier with a low output impedance to
drive the SAW filter directly
Electronic band switch.
APPLICATIONS
3-band TV tuners
3-band TV front-ends
3-band VCR tuners
3-band VCR front-ends.
GENERAL DESCRIPTION
The TDA5731M is a monolithic integrated circuit that performs the band A, band B and band C mixer/oscillator functions in TV and VCR tuners. This low power mixer/oscillator circuit requires a power supply of 5 V and is available in a very small package outline. This device gives the designer the capability to design an economical and physically small 3-band tuner. The tuner development time can be drastically reduced by using this device.
In addition, when hyperband is not required, the TDA5731M may be used in a VHF/UHF tuner with an appropriate tuned circuit for VHFl and VHFlll in band A and the tuned circuit of band C for UHF.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
P
supply voltage 5.0 V
I
P
supply current 36 mA
f
R
frequency range band A 42 180 MHz
band B 160 470 MHz band C 430 860 MHz
N noise figure band A 7.5 dB
band B 8.0 dB band C 9.0 dB
IP intermodulation band A −−66 dB
band B −−66 dB band C −−66 dB
G
v
voltage gain band A 23 dB
band B 34 dB band C 33 dB
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
TDA5731M SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1
Page 3
1995 Mar 21 3
Philips Semiconductors Product specification
Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners
TDA5731M
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
MBE374
BAND A
OSCILLATOR
13
BAND C
OSCILLATOR
26
BAND B
OSCILLATOR
574
MIXER MIXER MIXER
8
BAND B
STAGE
BAND C
STAGE
BAND A
STAGE
DC
STABILIZER
LOCAL
OSCILLATOR
AMPLIFIER
ELECTRONIC
BAND
SWITCH
IF
AMPLIFIER
910
15 20 19 18 17 16 14 13 12 11
band switch
input
TDA5731M
RF
GND
band A
input
band B
inputs
V
P
band C
inputs
band C oscillator
tuned cicuit
band B oscillator
tuned cicuit
IF outputs
local oscillator
amplifier outputs
band A oscillator
tuned cicuit
GND
Page 4
1995 Mar 21 4
Philips Semiconductors Product specification
Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners
TDA5731M
PINNING
SYMBOL PIN DESCRIPTION
AOSCIB 1 band A oscillator input base COSCIB 2 band C oscillator input base AOSCOC 3 band A oscillator output collector COSCOC1 4 band C oscillator output
collector 1 BOSCIB 5 band B oscillator input base COSCOC2 6 band C oscillator output
collector 2 BOSCOC 7 band B oscillator output collector GND 8 ground (0 V) IFOUT1 9 IF amplifier output 1 IFOUT2 10 IF amplifier output 2 BS 11 band switch input LOOUT1 12 local oscillator amplifier output 1 LOOUT2 13 local oscillator amplifier output 2 V
P
14 supply voltage AIN 15 band A input BIN1 16 band B input 1 BIN2 17 band B input 2 RFGND 18 ground for RF input CIN1 19 band C input 1 CIN2 20 band C input 2
Fig.2 Pin configuration.
handbook, halfpage
TDA5731M
MBE373
1 2 3 4 5 6 7 8 9
10
20 19 18 17 16 15 14 13 12 11
CIN2AOSCIB
COSCIB
AOSCOC
COSCOC1
BOSCIB
COSCOC2
BOSCOC
GND IFOUT1 IFOUT2
CIN1 RFGND BIN2 BIN1 AIN
V
LOOUT2 LOOUT1 BS
P
Page 5
1995 Mar 21 5
Philips Semiconductors Product specification
Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners
TDA5731M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
HANDLING
Human Body Model: GND (8), RFGND (18), V
P
(14) shorted together. Pins 4, 6 and 7 withstand 500 V. All other pins
withstand 2000 V. Machine Model: GND (8), RFGND (18), VP(14) shorted together. Pins 4, 6 and 7 withstand 50 V. All other pins
withstand 200 V.
IF AMPLIFIER CHARACTERISTICS
V
P
=5V; T
amb
=25°C; differentialy measured at 36 MHz; measured in circuit of Fig.6; unless otherwise specified.
Note
1. All S parameters are referenced to a 50 system.
SYMBOL PARAMETER MIN. MAX/ UNIT
V
P
supply voltage 0.3 +7.0 V
V
SW(max)
maximum switching voltage 0.3 +7.5 V
V
P(op)
operating supply voltage 4.5 5.5 V
V
n(max)
maximum voltage on each pin with a 22 k resistor connected in series
35 V
I
O
output current of each pin to ground −−10 mA
t
sc(max)
maximum short-circuit time (all pins) 10 s
T
stg
storage temperature 55 +150 °C
T
amb
operating ambient temperature 10 +80 °C
T
j
junction temperature +150 °C
SYMBOL PARAMETER VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air 120 K/W
SYMBOL PARAMETER CONDITIONS MIN.
TYP.
MAX. UNIT
MOD. PHASE
S
22
output reflection coefficient note 1; see Fig.11 −−14 +9 dB/°
Z
o
output impedance (Rs+Ls)R
s
74 −Ω
L
s
21 nH
Page 6
1995 Mar 21 6
Philips Semiconductors Product specification
Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners
TDA5731M
CHARACTERISTICS
V
P
=5V; T
amb
=25°C; measured in circuit of Fig.6; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply (T
amb
= 10 to +80 °C; VP= 4.5 to 5.5 V)
V
P
supply voltage 4.5 5.0 5.5 V
I
P
supply current 28 36 44 mA
V
SW
switching voltage (depending on supply voltage VP)
band A 0 0.18VPV band B 0.26V
P
0.47VPV
band C 0.55V
P
V
P
V
I
SW
switching current band A −−2µA
band B −−10 µA band C −−25 µA
Band A mixer (including IF amplifier)
f
R
frequency range 42 180 MHz
N noise figure f
i
= 50 MHz; see Fig.3 7.5 9 dB
f
i
= 180 MHz; see Fig.3 910 dB
g
os
optimum source conductance for minimum noise figure
fi=50MHz 0.5 mS f
i
= 180 MHz 1.1 mS
Y
I
input admittance (GP//CP)f
i
= 50 MHz; see Fig.7 0.27 mS
f
i
= 180 MHz; see Fig.7 0.34 mS
f
i
= 50 to 180 MHz; see Fig.7 1.9 pF
IP3 intermodulation using the
3 signals method
f
N
= 180 MHz; note 1 −−66 60 dB
V
i
input voltage 10 kHz pulling in channel;
fi= 180 MHz
96 100 dBµV
G
v
voltage gain 20log(V
9-10/V15
); fi= 50 MHz;
note 2
20.5 23 25.5 dB
20log(V
9-10/V15
); fi= 180 MHz;
note 2
20.5 23 25.5 dB
Band A oscillator
f
R
frequency range T
amb
= 10 to +80 °C; VP= 4.5 to 5.5 V; V
tune
= 0.45 to 28 V
80 210 MHz
f
shift
frequency shift Vp= ±5%; note 3 −−200 kHz
χ
ripple(p-p)
ripple susceptibility of supply voltage (peak-to-peak value)
fi= 80 MHz; note 4 20 −− mV
f
ripple(p-p)
frequency ripple (peak-to-peak value)
from 20 Hz to 500 kHz; fi= 210 MHz
20 −− mV
f
drift
frequency drift without compensation:
notes 5 and 6
−−600 kHz
5 s to 15 min after switching on; without compensation: note 7
−−200 kHz
Page 7
1995 Mar 21 7
Philips Semiconductors Product specification
Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners
TDA5731M
Band B mixer (including IF amplifier); measurements using hybrid; note 8 f
R
frequency range 160 470 MHz
N noise figure
(not corrected for image)
f
i
= 170 MHz 8.0 10 dB
f
i
= 470 MHz 8.0 10 dB
Z
I
input impedance (Rs+Ls)fi= 160 to 470 MHz; see Fig.8 23 −Ω
f
i
= 160 to 470 MHz; see Fig.8 10 nH
IP3 intermodulation using the
3 signal method
f
N
= 170 MHz; note 1 −−66 60 dB
f
N
= 470 MHz; note 1 −−66 60 dB
V
i
input voltage fi= 470 MHz; 10 kHz pulling;
in channel
83 87 dBµV
N+51 MHz pulling; f
i
= 470 MHz; note 9
62 dBµV
G
v
voltage gain fi= 170 MHz; note 2 31 34 37 dB
f
i
= 470 MHz; note 2 31 34 37 dB
Band B oscillator
f
R
frequency range T
amb
= 10 to +80 °C; VP= 4.5 to 5.5 V; V
tune
= 0.45 to 28 V
205 490 MHz
f
shift
frequency shift VP= ±5%; note 3 −−400 kHz
χ
ripple(p-p)
ripple susceptibility of supply voltage (peak-to-peak value)
fi= 205 MHz; note 8 20 −− mV
f
ripple(p-p)
frequency ripple (peak-to-peak value)
from 20 Hz to 500 kHz; fi= 490 MHz
10 −− mV
f
drift
frequency drift without compensation;
notes 5 and 6
−−2 MHz
5 s to 15 min after switching on; without compensation; note 7
−−300 kHz
Band C mixer (including IF amplifier); measurements using hybrid; note 8 f
R
frequency range 430 860 MHz
N noise figure
(not corrected for image)
f
i
= 430 MHz 911 dB
f
i
= 860 MHz 911 dB
Z
I
input impedance (Rs + Ls)fi= 430 MHz; see Fig.9 34 −Ω
f
i
= 860 MHz; see Fig.9 45 −Ω
f
i
= 430 to 860 MHz; see Fig.9 9 nH
IP3 intermodulation using the
3 signal method
f
N
= 430 MHz; note 1 −−66 60 dB
f
N
= 860 MHz; note 1 −−66 60 dB
V
i
input voltage 10 kHz pulling in channel;
fi= 860 MHz; note 2
83 87 dBµV
N+51 MHz pulling; f
i
= 860 MHz; note 9
61 dBµV
G
v
voltage gain fi= 430 MHz; note 2 30 33 36 dB
f
i
= 860 MHz; note 2 30 33 36 dB
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Page 8
1995 Mar 21 8
Philips Semiconductors Product specification
Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners
TDA5731M
Notes
1. Cross modulation measurement is achieved using the 3 equal signals method (see Fig.4).
2. The gain is defined as the transducer gain (measured in Fig.8) plus the voltage transformation ratio of L7 to L8 (5 : 1, 15.4 dB).
3. The frequency shift is defined as a change in oscillator frequency for a variation of supply voltage. In one instance VP= 5 to 4.75 V and in the other instance VP= 5 to 5.25 V. In both cases, the frequency shift is below the specified value.
4. The frequency ripple susceptibility is measured at 500 kHz at the LO output (see Fig.5). The level of the ripple signal is increased until a difference of 53.5 dB is reached at the IF output.
5. The frequency drift is defined as the change in oscillator frequency for a variation of ambient temperature, on the one hand from T
amb
=25°C to T
amb
=0°C and on the other hand from T
amb
=25°C to T
amb
=50°C.
6. The capacitors in the oscillator circuits of Fig.8 are as follows: a) Band A: C1, C5 and C7. b) Band B: C4 and C9 and C11. c) Band C: C2, C3, C6, C8 and C10 are NP0 types.
7. Switching on drift is the change in oscillator frequency between 5 seconds and 15 minutes after switching on.
8. The values have been corrected for hybrid and cable losses. The symmetrical output impedance of the circuit is 100 .
Band C oscillator
f
R
frequency range T
amb
= 10 to +80 °C; VP= 4.5 to 5.5 V; V
tune
= 0.45 to 28 V
485 900 MHz
f
shiift
frequency shift VP= ±5%; note 3 −−400 kHz
χ
ripple(p-p)
ripple susceptibility of supply voltage (peak-to-peak value)
fi= 485 MHz; note 4 20 −− mV
f
ripple(p-p)
frequency ripple (peak-to-peak value)
from 20 Hz to 500 kHz; f
i
= 900 MHz
10 −− mV
f
drift
frequency drift without compensation;
notes 5 and 6
−−2.5 MHz
5 s to 15 min after switching on; without compensation; note 7
−−600 kHz
LO output
Y
O
output admittance (GP//CP)fi= 80 MHz; see Fig.10 2.4 mS
f
i
= 80 MHz; see Fig.10 0.9 pF
f
i
= 900 MHz; see Fig.10 4.6 mS
f
i
= 900 MHz; see Fig.10 0.9 pF
V
o
output voltage RL=50Ω; T
amb
= 10 to +80 °C;
VP= 4.5 to 5.5 V;
80 91 100 dBµV
SRF spurious signal on LO output
with respect to LO output signal
R
L
=50Ω; T
amb
= 10 to +80 °C;
VP= 4.5 to 5.5 V; note 10
−−−10 dB
HLO LO signal harmonics with
respect to LO signal
R
L
=50Ω; T
amb
= 10 to +80 °C;
VP= 4.5 to 5.5 V;
−−−10 dB
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Page 9
1995 Mar 21 9
Philips Semiconductors Product specification
Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners
TDA5731M
9. The input level of a N + 5 1 MHz signal which gives a signal 30 dB below the oscillator carrier at the LO output.
10. Measured at 50 with the following RF input voltages; a) RF voltage level = 120 dBµV at fi< 180 MHz. b) RF voltage level = 107.5 dBµV at fi= 180 to 225 MHz. c) RF voltage level = 97 dBµV at fi= 225 to 860 MHz.
Fig.3 Input circuit for optimum noise figure.
(a) For fR= 50 MHz:
mixer A frequency response measured = 57 MHz, loss = 0 dB image suppression = 16 dB C1 = 9 pF C2=15pF L1 = 7 turns ( 5.5 mm, wire dia. = 0.5 mm) l1 = rigid cable (RIM): 5 cm long
(rigid cable (RIM); 33 dB/100 m; 50 Ω, 96 pF/m).
handbook, full pagewidth
MBE286 - 1
L1 C2
C1
PCB
plug plug
BNC BNC
RIM-RIM
I1
C4
C3
PCB
RIM-RIM
I3
I2
(a) (b)
(b) For fR= 180 MHz:
mixer A frequency response measured = 150.3 MHz, loss = 1.3 dB image suppression = 13 dB C3 = 5 pF C4=25pF l2 = rigid cable (RIM): 30 cm long l3 = rigid cable (RIM): 5 cm long
(rigid cable (RIM); 33 dB/100 m; 50 Ω; 96 pF/m).
Page 10
1995 Mar 21 10
Philips Semiconductors Product specification
Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners
TDA5731M
Fig.4 Cross modulation/incidental FM measurement.
book, full pagewidth
MBE375
TDA5731
f
n 1
0.5 MHz 0.5 MHz
f
IF
1 MHz 1 MHz
f
n
out of specification
66 dB specified
within specification
105 dBµV
Fig.5 Ripple susceptibility measurement.
handbook, full pagewidth
MBE376
MEASUREMENT
TEST CIRCUIT
OF FIG. 14
f
o
500 kHz 500 kHz
to spectrum analyser
ripple signal
47
100 µF100 µF
6.8 k
DC supply
V
P
Page 11
1995 Mar 21 11
Philips Semiconductors Product specification
Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners
TDA5731M
Fig.6 Reference measurement set-up.
handbook, full pagewidth
MBE377
BAND A
OSCILLATOR
13
BAND C
OSCILLATOR
26
BAND B
OSCILLATOR
574
MIXER MIXER MIXER
8
BAND B
STAGE
BAND C
STAGE
BAND A
STAGE
DC
STABILIZER
LOCAL
OSCILLATOR
AMPLIFIER
ELECTRONIC
BAND
SWITCH
IF
AMPLIFIER
910
15 20 19 18 17 16 14 13 12 11
TDA5731M
C12
C13
C14
C15
C17
C18
L5
C19 C20
R8
HYBRID
ANZAC-183-4
C21
R10
R11
ABC
to
pre-stages
5 V
50
output
HYBRID
ANZAC-183-4
C16
5 V
C30 C31
C22 C23
C3
D2
L3
C2
L2
C6 C8 C10
L1
D1
C1
R1
R2 R4
D3
C4
R5
L4
R6
C9 C11C5 C7
C28 C27 C26 C25 C29
R7
V
t
L6
L7
IF output
50
spectrum
analyser
MEASUREMENT
NETWORK
C24
50 50 50 50
50
Page 12
1995 Mar 21 12
Philips Semiconductors Product specification
Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners
TDA5731M
Components values for Fig.8 Table 1 Capacitors
(all SMD and NP0 except C28)
NUMBER VALUE
C1 82 pF C2 5.6 pF C3 100 pF C4 100 pF C5 2.2 pF C6 1 pF C7 2.2 pF C8 1 pF C9 2.2 pF C10 2.2 pF C11 2.7 pF C12 1 nF C13 1 nF C14 1 nF C15 1 nF C16 1 nF C17 10 nF C18 10 nF C19 1 nF C20 1 nF C21 1 nF C22 1 nF C23 1 nF C24 18 pF C25 1 nF C26 1 nF C27 1 nF C28 150 nF C29 1 nF C30 3 pF C31 3 pF
Table 2 Resistors (all SMD)
Table 3 Diodes and coils
Note
1. Wire size for L1 to L4 is 0.4 mm
Transformers (L6 = 2 × 5 turns and L7 = 2 turns))
Coil type: TOKO 7kN; material: 113kN, screw core (03-0093), pot core (04-0026).
NUMBER VALUE
R1 47 k R2 24 k R4 24 k R5 47 k R6 15 R7 10 k R8 100 R10 15 k R11 27 k
NUMBER VALUE
Diodes
D1 BB132 D2 BB134 D3 BB133
Coils
(1)
L1 7.5 turns (3 mm) L2 2.5 turns (3.5 mm) L3 1.5 turns (2.5 mm) L4 1.5 turns (4 mm) L5 2.2 µH (choke coil)
Page 13
1995 Mar 21 13
Philips Semiconductors Product specification
Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners
TDA5731M
Fig.7 Input admittance (S11) of the band A mixer input (40 to 200 MHz) (Y chart).
handbook, full pagewidth
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
– j
10
MCD517
0.5 10.2 52
40 MHz
200 MHz
Fig.8 Input impedance (S11) of the band B mixer input (170 to 470 MHz) (Z chart).
handbook, full pagewidth
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
– j
170 MHz
MCD518
0.5 10.2 1052
470 MHz
Page 14
1995 Mar 21 14
Philips Semiconductors Product specification
Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners
TDA5731M
Fig.9 Input impedance (S11) of the band C mixer input (460 to 880 MHz) (Z chart).
handbook, full pagewidth
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
– j
860 MHz
MCD521
0.5 10.2 1052
430 MHz
Fig.10 Output admittance (S22) of the IF amplifier (80 to 900 MHz) (Y chart).
handbook, full pagewidth
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
– j
MCD522
80 MHz
900 MHz
0.5 10.2 1052
Page 15
1995 Mar 21 15
Philips Semiconductors Product specification
Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners
TDA5731M
Fig.11 Output reflection coefficient (S22) of the LO amplifier (25 to 45 MHz) (Z chart).
handbook, full pagewidth
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
– j
MCD523
0.5 10.2 1025
45 MHz
25 MHz
Page 16
1995 Mar 21 16
Philips Semiconductors Product specification
Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners
TDA5731M
PACKAGE OUTLINE
UNIT A1A2A
3
b
p
cD
(1)E(1)
(1)
eHELLpQZywv θ
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
mm
0.1501.4
1.2
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
0.65 1.0 0.2
6.6
6.2
0.65
0.45
0.48
0.18
10
0
o
o
0.13 0.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
0.75
0.45
SOT266-1
90-04-05 95-02-25
w M
θ
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v M
A
X
(A )
3
A
y
0.25
110
20
11
pin 1 index
0 2.5 5 mm
scale
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
A
max.
1.5
Page 17
1995 Mar 21 17
Philips Semiconductors Product specification
Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners
TDA5731M
SOLDERING Plastic small outline packages
B
YWAVE
During placement and before soldering, the component must be fixed with a droplet of adhesive. After curing the adhesive, the component can be soldered. The adhesive can be applied by screen printing, pin transfer or syringe dispensing.
Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder bath is 10 s, if allowed to cool to less than 150 °C within 6 s. Typical dwell time is 4 s at 250 °C.
A modified wave soldering technique is recommended using two solder waves (dual-wave), in which a turbulent wave with high upward pressure is followed by a smooth laminar wave. Using a mildly-activated flux eliminates the need for removal of corrosive residues in most applications.
B
Y SOLDER PASTE REFLOW
Reflow soldering requires the solder paste (a suspension of fine solder particles, flux and binding agent) to be
applied to the substrate by screen printing, stencilling or pressure-syringe dispensing before device placement.
Several techniques exist for reflowing; for example, thermal conduction by heated belt, infrared, and vapour-phase reflow. Dwell times vary between 50 and 300 s according to method. Typical reflow temperatures range from 215 to 250 °C.
Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 min at 45 °C.
R
EPAIRING SOLDERED JOINTS (BY HAND-HELD SOLDERING
IRON OR PULSE
-HEATED SOLDER TOOL)
Fix the component by first soldering two, diagonally opposite, end pins. Apply the heating tool to the flat part of the pin only. Contact time must be limited to 10 s at up to 300 °C. When using proper tools, all other pins can be soldered in one operation within 2 to 5 s at between 270 and 320 °C. (Pulse-heated soldering is not recommended for SO packages.)
For pulse-heated solder tool (resistance) soldering of VSO packages, solder is applied to the substrate by dipping or by an extra thick tin/lead plating before package placement.
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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