Datasheet TDA1563Q-N1-S400, TDA1563Q-N1 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1998 Jul 14
File under Integrated Circuits, IC01

2000 Feb 09

INTEGRATED CIRCUITS

TDA1563Q

2 × 25 W high efficiency car radio
power amplifier

2000 Feb 09 2

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

FEATURES

• Low dissipation due to switching from Single-Ended
(SE) to Bridge-Tied Load (BTL) mode

• Differential inputs with high Common Mode Rejection
Ratio (CMRR)

• Mute/standby/operating (mode select pin)

• Zero crossing mute circuit

• Load dump protection circuit

• Short-circuit safe to ground, to supply voltage and

across load

• Loudspeaker protection circuit

• Device switches to SE operation at excessive junction

temperatures

• Thermal protectionat high junction temperature (170°C)

• Diagnostic information (clip detection and

protection/temperature)

• Clipping information can be selected between
THD = 2.5% or 10%

GENERAL DESCRIPTION

The TDA1563Q is a monolithic power amplifier in a
17-lead DIL-bent-SIL plastic power package. It contains
two identical 25 W amplifiers. The dissipation is minimized
by switching from SE to BTL mode when a higher output
voltage swing is needed. The device is primarily
developed for car radio applications.

QUICK REFERENCE DATA

ORDERING INFORMATION

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

P

supply voltage DC biased 6 14.4 18 V

non-operating −−30 V
load dump −−45 V

I

ORM

repetitive peak output current −−4A

I

q(tot)

total quiescent current RL= ∞−95 150 mA

I

stb

standby current − 150µA

Z

i

 input impedance 90 120 150 kΩ

P

o

output power RL=4Ω; EIAJ − 38 − W

R

L

=4Ω; THD = 10% 23 25 − W

V

selclip

RL=4Ω; THD = 2.5% 18 20 − W

G

v

closed loop voltage gain 25 26 27 dB

CMRR common mode rejection ratio f = 1 kHz; R

s

=0Ω−80 − dB

SVRR supply voltage ripple rejection f = 1 kHz; R

s

=0Ω 45 65 − dB

∆V

O

 DC output offset voltage −−100 mV

α

cs

channel separation Rs=0Ω 40 70 − dB

∆G

v

 channel unbalance −−1dB

TYPE

NUMBER

PACKAGE

NAME DESCRIPTION VERSION

TDA1563Q DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1

2000 Feb 09 3

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

BLOCK DIAGRAM

handbook, full pagewidth

MGR173

+

−

+

−

+

−

+

−

MUTE

VI

VI

VI

IV

IV

VI

SLAVE

CONTROL

17

16

IN2+

3

CIN

IN2−

60
kΩ

60
kΩ

60
kΩ

60
kΩ

25 kΩ

V

ref

OUT2−

OUT2+

10

11

CSE

4

+

−

+

−

+

−

+

−

MUTE

SLAVE

CONTROL

1

2

IN1+

IN1−

OUT1+

OUT1−

8

7

+

−

V

P

STANDBY

LOGIC

CLIP AND

DIAGNOSTIC

6121415

MODE SC DIAG CLIP

GND

9

V

P2

13

V

P1

5

TDA1563Q

Fig.1 Block diagram.

2000 Feb 09 4

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

PINNING

SYMBOL PIN DESCRIPTION

IN1+ 1 non-inverting input 1
IN1− 2 inverting input 1
CIN 3 common input
CSE 4 electrolytic capacitor for SE mode
V

P1

5 supply voltage 1
MODE 6 mute/standby/operating
OUT1− 7 inverting output 1
OUT1+ 8 non-inverting output 1
GND 9 ground
OUT2− 10 inverting output 2
OUT2+ 11 non-inverting output 2
SC 12 selectable clip
V

P2

13 supply voltage2
DIAG 14 diagnostic: protection/temperature
CLIP 15 diagnostic: clip detection
IN2− 16 inverting input 2
IN2+ 17 non-inverting input 2

handbook, halfpage

TDA1563Q

MGR174

IN1+
IN1−

CIN

CSE

V

P1

MODE
OUT1−
OUT1+

GND
OUT2−
OUT2+

SC

V

P2

DIAG

CLIP

IN2−
IN2+

1
2
3
4
5
6
7
8

9
10
11
12
13
14
15
16
17

Fig.2 Pin configuration.

2000 Feb 09 5

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

FUNCTIONAL DESCRIPTION

The TDA1563Q contains two identical amplifiers with
differential inputs. At low output power (up to output
amplitudes of 3 V (RMS) at VP= 14.4 V), the device
operates as a normal SE amplifier. When a larger output
voltage swing is needed, the circuit switches to BTL
operation.

With a sine wave input signal, the dissipation of a
conventionalBTL amplifier up to 2 W output power is more
than twice the dissipation of the TDA1563Q (see Fig.10).

In normal use, when the amplifier is driven with music-like
signals, the high (BTL) output power is only needed for a
smallpercentageofthetime.Assumingthatamusicsignal
has a normal (Gaussian) amplitude distribution, the
dissipation of a conventional BTL amplifier with the same
output power is approximately 70% higher (see Fig.11).

The heatsink has to be designed for use with music
signals. With such a heatsink, the thermal protection will
disable the BTL mode when the junction temperature
exceeds 150 °C.In this case, the output poweris limited to
5 W per amplifier.

The gain of each amplifier is internally fixed at 26 dB. With
the MODE pin, the device can be switched to the following
modes:

• Standby with low standby current (<50 µA)

• Mute condition, DC adjusted

• On, operation.

The information on pin 12 (selectable clip) determines at
which distortion figures a clip detection signal will be
generated at the clip output. A logic 0 applied to pin 12 will
select clip detection at THD = 10%, a logic 1 selects
THD = 2.5%. A logic 0 can be realised by connecting this
pin to ground. A logic 1 can be realised by connecting it to
V

logic

(see Fig.7) or the pin can also be left open. Pin 12
may not be connected to VP because its maximum input
voltage is 18 V (VP> 18 V under load dump conditions).

The device is fully protected against a short circuit of the
output pins to ground and to the supply voltage. It is also
protected against a short circuit of the loudspeaker and
against high junction temperatures. In the event of a
permanentshortcircuittogroundorthesupplyvoltage, the
output stage will be switched off, causing low dissipation.
With a permanent short circuit of the loudspeaker, the
output stage will be repeatedly switched on and off. In the
‘on’ condition, the duty cycle is low enough to prevent
excessive dissipation.

To avoid plops during switching from ‘mute’ to ‘on’ or from
‘on’ to ‘mute/standby’ while an input signal is present, a
built-in zero-crossing detector only allows switching at
zero input voltage. However, when the supply voltage
drops below 6 V (e.g. engine start), the circuit mutes
immediately, avoiding clicks from the electronic circuit
preceding the power amplifier.

The voltage of the SE electrolytic capacitor (pin 4) is kept
at 0.5VP by a voltage buffer (see Fig.1). The value of this
capacitor has an important influence on the output power
in SE mode. Especially at low signal frequencies, a high
value is recommended to minimize dissipation.

The two diagnostic outputs (clip and diag) are
open-collector outputs and require a pull-up resistor.

The clip output will be LOW when the THD of the output
signal is higher than the selected clip level (10% or 2.5%).

The diagnostic output gives information:

• about short circuit protection:
– When a short circuit (to ground or the supply voltage)

occurs at the outputs (for at least 10 µs), the output
stages are switched off to prevent excessive
dissipation. The outputs are switched on again
approximately 50 ms after the short circuit is
removed. During this short circuit condition, the
protection pin is LOW.

– When a short circuit occurs across the load (for at

least 10 µs), the output stages are switched off for
approximately50 ms.Afterthistime,acheckis made
to see whether the short circuit is still present.
The power dissipation in any short circuit condition is
very low.

• during startup/shutdown, when the device is internally
muted.

• temperaturedetection: This signal (junctiontemperature
> 145°C) indicates that the temperature protection will
becomeactive. The temperature detection signal can be
used to reduce the input signal and thus reduce the
power dissipation.

2000 Feb 09 6

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. The value of R

th(c-h)

depends on the application (see Fig.3).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

P

supply voltage operating − 18 V

non-operating − 30 V
load dump; t

r

> 2.5 ms − 45 V

V

P(sc)

short-circuit safe voltage − 18 V

V

rp

reverse polarity voltage − 6V

I

ORM

repetitive peak output current − 4A

P

tot

total power dissipation − 60 W

T

stg

storage temperature −55 +150 °C

T

vj

virtual junction temperature − 150 °C

T

amb

ambient temperature −40 −°C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-c)

thermal resistance from junction to case see note 1 1.3 K/W

R

th(j-a)

thermal resistance from junction to ambient 40 K/W

Heatsink design

There are two parameters that determine the size of the
heatsink. The first is the rating for the virtual junction
temperature and the second is the ambient temperature at
which the amplifier must still deliver its full power in the
BTL mode.

With a conventional BTL amplifier, the maximum power
dissipation with a music-like signal (at each amplifier) will
be approximately two times 6.5 W.

Atavirtual junction temperature of 150 °C and a maximum
ambient temperature of 65 °C, R

th(vj-c)

= 1.3 K/W and

R

th(c-h)

= 0.2 K/W, the thermal resistance of the heatsink

should be:

Comparedto a conventional BTL amplifier, the TDA1563Q
has a higher efficiency. The thermal resistance of the

heatsink should be:

150 65–

2 6.5×

----------------------

1.3– 0.2– 5 K/W=

150 65–

2 6.5×

----------------------

1.3– 0.2– 5 K/W=

1.7

145 65–

2 6.5×

----------------------





1.3– 0.2– 9 K/W=

handbook, halfpage

3.6 K/W

0.6 K/W

3.6 K/W

virtual junction

OUT 1 OUT 1

case

3.6 K/W

0.6 K/W

3.6 K/W

OUT 2 OUT 2

MGC424

0.1 K/W

Fig.3 Thermal equivalent resistance network.

2000 Feb 09 7

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

DC CHARACTERISTICS

VP= 14.4 V; T

amb

=25°C; measured in Fig.7; unless otherwise specified.

Notes

1. The circuit is DC biased at V

P

= 6 to 18 V and AC operating at VP=8to18V.

2. If the junction temperature exceeds 150 °C, the output power is limited to 5 W per channel.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies

V

P

supply voltage note 1 6 14.4 18 V

I

q(tot)

total quiescent current RL= ∞−95 150 mA

I

stb

standby current − 150µA

V

C

average electrolytic capacitor voltage at pin 4 − 7.1 − V

∆V

O

 DC output offset voltage on state −−100 mV

mute state −−100 mV
Mode select switch (see Fig.4)
V

ms

voltage at mode select pin (pin 6) standby condition 0 − 1V

mute condition 2 − 3V

operating condition 4 5 V

P

V

I

ms

switch current through pin 6 Vms=5V − 25 40 µA

Diagnostic

V

diag

output voltage at diagnostic outputs (pins 14 and

15): protection/temperature and detection

during any fault condition −−0.5 V

I

diag

current through pin 14 or 15 during any fault condition 2 −−mA

V

SC

input voltage at selectable clip pin (pin 12) clip detect at THD = 10% −−0.5 V

clip detect at THD = 2.5% 1.5 − 18 V

Protection

T

pre

prewarning temperature − 145 −°C

T

dis(BTL)

BTL disable temperature note 2 − 150 −°C

2000 Feb 09 8

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

Fig.4 Switching levels of the mode select switch.

handbook, halfpage

MGR176

18

V

mode

4

3

2

1

0

Mute

Operating

Standby

2000 Feb 09 9

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

AC CHARACTERISTICS

VP= 14.4 V; RL=4Ω; CSE = 1000 µF; f = 1 kHz; T

amb

=25°C; measured in Fig.7; unless otherwise specified.

Notes

1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz.

2. Frequency response externally fixed (input capacitors determine low frequency roll-off).

3. The SE to BTL switch voltage level depends on V

P

.

4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz.

5. Noise output voltage is independent of Rs.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

P

o

output power THD = 0.5% 15 19 − W

THD = 10% 23 25 − W
EIAJ − 38 − W
V

P

= 13.2 V; THD = 0.5% − 16 − W

V

P

= 13.2 V; THD = 10% − 20 − W

THD total harmonic distortion P

o

= 1 W; note 1 − 0.1 − %

P

d

dissipated power see Figs 10 and 11 W

B

p

power bandwidth THD= 1%; Po= −1dB

with respect to 15 W

− 20 to 15000 − Hz

f

ro(l)

low frequency roll-off −1 dB; note 2 − 25 − Hz

f

ro(h)

high frequency roll-off −1dB 130 −−kHz

G

v

closed loop voltage gain Po= 1 W 25 26 27 dB

SVRR supply voltage ripple rejection R

s

=0Ω; V

ripple

= 2 V (p-p)
on/mute 45 65 − dB
standby; f = 100 Hz to 10 kHz 80 −−dB

CMRR common mode rejection ratio R

s

=0Ω−80 − dB

Z

i

 input impedance 90 120 150 kΩ

∆Z

i

 mismatch in input impedance − 1 − %

V

SE-BTL

SE to BTL switch voltage level note 3 − 3 − V

V

o(mute)

 output voltage mute (RMS value) Vi= 1 V (RMS) − 100 150 µV

V

n(o)

noise output voltage on; Rs=0Ω; note 4 − 100 150 µV

on; R

s

=10kΩ; note 4 − 105 −µV

mute; note 5 − 100 150 µV

α

cs

channel separation Rs=0Ω; Po=15W 40 70 − dB

∆G

v

 channel unbalance −− 1dB

2000 Feb 09 10

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

Fig.5 Clip detection waveforms.

handbook, halfpage

MGR177

V

o

CLIP

0

0

t

Fig.5 Clip detection waveforms. Fig.6 Protection waveforms.

handbook, halfpage

MGR178

maximum current short circuit to supply pins

short circuit
to ground

short circuit
removed

50

ms

50

ms

50

ms

10 µs

I

o

DIAG

0

max

max

t

t

2000 Feb 09 11

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

TEST AND APPLICATION INFORMATION

handbook, full pagewidth

MGR180

3CIN

25 kΩ

60kΩ60

kΩ

60kΩ60

kΩ

V

ref

OUT2−

OUT2+

10

11

CSE

4

2IN1−

1IN1+

OUT1+

OUT1−

8

7

STANDBY

LOGIC

CLIP AND

DIAGNOSTIC

6121415
MODE SC DIAG CLIP9GND

V

P2

13

V

P1

5

TDA1563Q

1 µF

1000 µF

220 nF

0.5R

s

220 nF

0.5R

s

+

−

+

−

V

ms

V

P

V

logic

R

pu

R

pu

10%

2.5%

16IN2−

17IN2+

220 nF

0.5R

s

100 nF

100 nF

3.9

Ω

4 Ω

3.9 Ω

100 nF

100 nF

3.9

Ω

4 Ω

3.9 Ω

220 nF

0.5R

s

+

−

+

−

220 nF 2200 µF

signal ground

power ground

Fig.7 Application diagram.

Connect Boucherot filter to pin 8 or pin 10 with the shortest possible connection.

2000 Feb 09 12

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

handbook, full pagewidth

76.20

35.56

TDA1563Q

RL-98

MGR189

+

−

Out2

+

−

Out2

+

−

In2

+

−

In1

Clip

Vp

GND

gnd

gnd

Prot

2.5%

10%

Mode

Mute

On
Off

Clip

Fig.8 PCB layout (component side) for the application of Fig.7.

Dimensions in mm.

2000 Feb 09 13

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

handbook, full pagewidth

76.20

35.56

MGR190

Vp

GND

2× 25 W high efficiency

1 µF

1

17

Out2

Out1

In1

In2

220 nF

220 nF

220 nF

Fig.9 PCB layout (soldering side) for the application of Fig.7.

Dimensions in mm.

2000 Feb 09 14

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

handbook, halfpage

010

P

o

(W)

25

0

5

10

15

20

2

P

d

(W)

468

MBH692

(1)

(2)

Fig.10 Dissipation; sine wave driven.

Input signal 1 kHz, sinusoidal; VP= 14.4 V.
(1) For a conventional BTL amplifier.
(2) For TDA1563Q.

handbook, halfpage

010

P

o

(W)

25

0

5

10

15

20

2

P

d

(W)

468

MBH693

(1)

(2)

Fig.11 Dissipation; pink noise through IEC-268

filter.

(1) For a conventional BTL amplifier.
(2) For TDA1563Q.

430 Ω

input output

330 Ω

3.3
kΩ

3.3
kΩ

10
kΩ

91
nF

68
nF

470 nF2.2 µF 2.2 µF

MGC428

Fig.12 IEC-268 filter.

2000 Feb 09 15

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

handbook, full pagewidth

MGR181

3CIN

25 kΩ

60kΩ60

kΩ

60kΩ60

kΩ

V

ref

OUT2−

OUT2+

10

11

CSE

4

2IN1−

1IN1+

OUT1+

OUT1−

8

7

STANDBY

LOGIC

CLIP AND

DIAGNOSTIC

6121415
MODE SC DIAG CLIP

V

P2

13

V

P1

5

TDA1563Q

1 µF

1000 µF

220 nF

220 nF

IEC-268

FILTER

pink

noise

+

−

+

−

V

ms

V

P

V

logic

R

pu

R

pu

16IN2−

17IN2+

220 nF

100 nF

100 nF

3.9

Ω

4

Ω

3.9

Ω

100 nF

100 nF

3.9

Ω

4

Ω

3.9

Ω

220 nF

+

−

+

−

220 nF 2200 µF

signal ground

power ground

9
GND

Fig.13 Test and application diagram for dissipation measurements with a music-like signal (pink noise).

2000 Feb 09 16

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

handbook, halfpage

0

150

100

50

0

8

Vp (V)

I

q

(mA)

2416

MDA845

Fig.14 Quiescent current as a function of VP.

Vms= 5 V; RI= ∞.

handbook, halfpage

02

V

ms

(V)

I

p

(mA)

46

250

0

200

150

100

50

MDA844

Fig.15 IP as a function of Vms (pin 3).

VP= 14.4 V; Vi=25mV

handbook, halfpage

818

60

0

20

40

10

P

o

(W)

Vp (V)

12 14 16

MDA843

(1)

(2)

(3)

Fig.16 Output power as a function of VP.

(1) EIAJ, 100 Hz.
(2) THD = 10 %.
(3) THD = 0.5 %.

handbook, halfpage

10

1

10

−1

10

−1

10

−2

10

−2

MDA842

1

10

THD + N

(%)

10

2

(1)

(2)

(3)

Po (W)

Fig.17 THD + noise as a function of Po.

(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.

2000 Feb 09 17

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

handbook, halfpage

10

1

10

−1

10

−2

MDA841

10 10

2

10

3

10

4

THD + N

(%)

f (Hz)

10

5

(1)

(2)

Fig.18 THD + noise as a function of frequency.

(1) Po=10W.
(2) Po=1W.

handbook, halfpage

20

22

24

26

G

v

(dB)

f (Hz)

28

MDA840

10 10

2

10

3

10

4

10

5

10

6

Fig.19 Gain as a function of frequency.

Vi= 100 mV.

handbook, halfpage

−90

−70

−50

−30

−10

MDA838

10

f (Hz)

α

cs

(dB)

10

2

10

3

10

4

10

5

(1)

(2)

Fig.20 Channel separation as a function of

frequency.

(1) Po=10W.
(2) Po=1W.

handbook, halfpage

−80

−60

−40

−20

0

MDA839

10

f (Hz)

SVRR

(dB)

10

2

10

3

10

4

10

5

Fig.21 SVRR as a function of frequency.

V

ripple(p-p)

=2V.

2000 Feb 09 18

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

handbook, halfpage

08

V

p

(V)

P

o

(W)

24

0.8

0.6

0.2

0

0.4

16

MDA846

Fig.22 AC operating as a function of VP.

Vi=70mV.

2000 Feb 09 19

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

handbook, full pagewidth

MGL914

0 1 2 t (ms) 3

1/2 V

P

1/2 V

P

0

−V

P

V

P

V

P

0

V

P

V

load

V

master

V

slave

0

Fig.23 Output waveforms.

See Fig.7:
V

load=V7−V8

or V11− V

10

V

master=V7

or V

11

V

slave=V8

or V

10

2000 Feb 09 20

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

APPLICATION NOTES
Example of the TDA1563Q in a car radio system

solution

The PCB shown here is used to demonstrate an audio
system solution with Philips Semiconductors devices for
caraudio applications. The board includes the SAA7705H:
a high-end CarDSP (Digital Signal Processor), the
TDA3617J: a voltage regulator providing 9 V, 5 V and

3.3 V outputs, and two TDA1563Qs to provide four 25 W
power outputs. A complete kit (application report, software
and demo board) of this “car-audio chip-set demonstrator”
is available.

The TDA1563Q is a state of the art device, which is
different to conventional amplifiers in power dissipation
because it switches between SE mode and conventional
BTL mode, depending on the required output voltage
swing. As a result, the PCBlayout is more critical than with
conventional amplifiers.

NOTES AND LAYOUT DESIGN RECOMMENDATIONS

1. The TDA1563Q mutes automatically during switch-on
and switch-off and suppresses biasing clicks coming
fromthe CarDSP circuit preceding the power amplifier.
Therefore, it is not necessary to use a plop reduction
circuit for the CarDSP. To mute or to enlarge the mute
time of the system, the voltage at the mode pin of the
amplifiers should be kept between 2 V and 3 V.

2. The input reference capacitor at pin 3 is specified as
1 µF but has been increased to 10 µF to improve the
switch-onplopperformance of the amplifiers. By doing
this, the minimum switch-on time increases from
standby,viainternalmute,tooperatingfrom150 ms to
600 ms.

3. It is important that the copper tracks to and from the
electrolytic capacitors (SE capacitors and supply
capacitors) are close together. Because of the
switching principle, switching currents flow here.
Combining electrolytic capacitors in a 4-channel
application is not recommended.

4. Filters at the outputs are necessary for stability
reasons. The filters at output pins 8 and 10 to ground
should be connected as close as possible to the
device (see layout of PCB).

5. Connect the supply decoupling capacitors of 220 nF
as closely as possible to the TDA1563Qs.

6. Place the tracks of the differential inputs as close
togetheras possible. If disturbances are injected at the
inputs, they will be amplified 20 times. Oscillation may
occur if this is not done properly.

7. The SE line output signal of the CarDSP here is
offered as a quasi differential input signal to the
amplifiers by splitting the 100 Ω unbalance series
resistance into two 47 Ω balanced series resistances.
Thereturntrackfrom the minus inputs of the amplifiers
are not connected to ground (plane) but to the line out
reference voltage of the CarDSP, VrefDA.

8. The output signal of the CarDSP needs an additional
1st order filter. This is done by the two balanced series
resistances of 47 Ω (see note 7) and a ceramic
capacitor of 10 nF. The best position to place these
10 nF capacitors is directly on the input pins of the
amplifiers.Now,any high frequency disturbance at the
inputs of the amplifiers will be rejected.

9. Only the area underneath the CarDSP is a ground
plane. A ground plane is necessary in PCB areas
where high frequency digital noise occurs. The audio
outputs are low frequency signals. For these outputs,
itis better to use two tracks (feed and return)asclosely
as possible to each other to make the disturbances
common mode. The amplifiers have differential inputs
with a very high common mode rejection.

10. The ground pin of the voltage regulator is the
reference for the regulator outputs. This ground
reference should be connected to the ground plane of
the CarDSP by one single track. The ground plane of
theCarDSP may not be connectedto“another” ground
by a second connection.

11. Prevent power currents from flowing through the
ground connection between CarDSP and voltage
regulator. The currents in the ground from the
amplifiers are directly returned to the ground pin of the
demo board. By doing this so, no ground interference
between the components will occur.

2000 Feb 09 21

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

handbook, full pagewidth

MGS827

+

+

+

−
+

−

+

−

+

−

Car DSP

SAA7704/05/08

on bottom side

Line-in

Left

10%

2.5%

Right

Power ON Mute

RL

10 V to 16 V

V

battery

FL

RR

GND

FR

FrontRear

V

BATT

Error On

TDA1563QTDA1563QTDA3617J

Diag Clip

I

2

C

(4)

(5)

(8)

(6)

4× 25 W into 4 Ohms

DSP

Car-audio chip-set demonstrator

Car-audio chip-set demonstrator

Bottom copper layer

Top copper layer

PHILIPS Semiconductors

(3)

(3)

Version 0.1

IO-98

Fig.24 PCB layout.

2000 Feb 09 22

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

handbook, full pagewidth

MGS825

82 kΩ

1 MΩ

1 MΩ

10 kΩ

10 kΩ

15 kΩ

220

Ω

220

Ω

100 pF

100

pF

TDA3617J

I2C

56A024

CD2WS

25

CD2DATA

26

CD2CL

27

CD1WS

28

PLANE

PLANE

PLANE

220 nF

PLANE

PLANE

CD1DATA

29

CD1CL

43

RTCB

44

SHTCB

4 3

FML

61

PLANE

SELFR

AML

42

DSPRESET

18
pF

PLANE

64

OSCOUT

18
pF

PLANE

47 nF

22 µF

1 µF

PLANE

PLANE

3.3 V DIG

63

X1

OSCIN

PLANE

62

V

SS(OSC)

65

100 nF

V

DD(OSC)

58

SDA

57

SCL

76

VDACN2

74

V

DDA1

45

TSCAN

Car DSP

SAA7704/05/08H

CDGND

77

TAPEL

69

6

PLANE
5 V

8
7

1 to 5

TAPER

68

AMAFL

67

8.2 kΩ

70

1 µF

330 pF

71

15 kΩ

1 µF

SDA

SCL

LEFT

LINE

IN

RIGHT

CD-GND

MICROCONTROLLER

VOLTAGE REGULATOR

8.2 kΩ

CDLI

72

330 pF

4.7 kΩ

CDLB

CDRI

CDRB

73

VDACN1

2

VDACP

1

AMAFR

66

VREFAD

78

75

V

SSA1

100 nF

3.3 V ANA

clip

3.3 V ANA

BLM21A10

BLM21A10

100 µF

100 Ω

5 V

V

BATT

V

BATT

100 Ω

3.3 V DIG

PLANE

21

TP522V

DDD5V1

23

V

SSD5V1

22 nF

PLANE

36

V

DDD5V2

37

V

SSD5V2

22 nF

PLANE

46

V

DDD5V3

47

V

SSD5V3

48

V

DDD3V1

51

V

DDD3V2

52

V

DDD3V3

55

V

DDD3V4

49

V

SSD3V1

11

V

DDA2

50

V

SSD3V2

53

V

SSD3V3

54

V

SSD3V4

22 nF

PLANE

100 nF

100 nF

PLANE

PLANE

16

FLV

15

FLI

2.2
nF

47 Ω

47 Ω

47 Ω

47 Ω

47 Ω

47 Ω

47 Ω

47 Ω

13

FRV

14

2.2
nF

6

FRI

RRI

7

RRV

2.2
nF

9

RLV

8

RLI

2.2
nF

12

VREFDA

10

V

SSA2

22 µF

4.7 kΩ

diagnostic

mute

4.7 kΩ
error

5 V 3.3 V DIG 3.3 V ANA

47 nF

REG2

47 µF

GND

GND

6

HOLD7V

en2

V

en3

V

P

9

REG3

5

47 nF

47 µF

8

GND

1

GND

3

PLANE GND

V

en1

2

GND

220 nF

GND

BAS16/A6

BC848B/1k

4.7 kΩ

power

on

power

5 V

A

B
C

D

E

F

G

H

I

J

K

Fig.25 Car-audio chip-set demonstrator (continued in Fig.26).

2000 Feb 09 23

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

handbook, full pagewidth

MGS826

3.9 Ω

3.9 Ω

3.9 Ω

3.9 Ω

100 nF

100 nF

220 nF

(16 V)

(16 V)

100 nF

100 nF

PGND

PGND

2× HIGH EFFICIENCY POWER AMPLIFIER

PGND

PGNDV

BATT

GND

TDA1563Q

7

OUT1−

1000 µF

2200 µF

8

OUT1+

OUT−

OUT+

10

OUT2−

11

OUT2+

MODE

46

CLIP

15

DIAG

14

SC

12

IN2−

16

9

V

P2

13

V

P1

5

CSE

OUT−

OUT+

10 nF

220 nF

IN2+

17

220 nF

IN1−

2

10 nF

220 nF

IN1+

1

CIN

3

220 nF

3.9 Ω

3.9 Ω

3.9 Ω

3.9 Ω

100 nF

100 nF

220 nF

(16 V)

(16 V)

100 nF

100 nF

PGND

FRONT

LEFT

FRONT

RIGHT

REAR

RIGHT

REAR

LEFT

PGND

PGNDV

BATT

V

BATT

10%

2.5%

GND

TDA1563Q

7

OUT1−

1000 µF

2200 µF

8

OUT1+

OUT−

OUT+

10

OUT2−

11

OUT2+

MODE

46

CLIP

15

DIAG

14

SC

12

IN2+

17

9

V

P2

13

V

P1

5

CSE

OUT−

OUT+

GND

V battery

10 nF

220 nF

IN2−

16

220 nF

IN1+

1

10 nF

220 nF

IN1−

2

CIN

3

220 nF

10 µF

10 µF

100 µH/6A

GND

clip select

5 V

GND PGND

A

B
C

D

E

F

G

H

I

J

K

Fig.26 Car-audio chip-set demonstrator (continued from Fig.25).

2000 Feb 09 24

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

Advantages of high efficiency

• Power conversion improvement (power supply)

Usually, the fact that the reduction of dissipation is
directly related to supply current reduction is neglected.
One advantage is less voltage drop in the whole supply
chain.Another advantage is less stress for the coil inthe
supply line. Even the adapter or supply circuit remains
cooler than before as a result of the reduced heat
dissipation in the whole chain because more supply
current will be converted to output power.

• Power dissipation reduction

This is the best known advantage of high efficiency
amplifiers.

• Heatsink size reduction

The heatsink size of a conventional amplifier may be
reduced by approximately 50% at VP= 14.4 V when the
TDA1563Q is used. In this case, the maximum heatsink
temperature will remain the same.

• Heatsink temperature reduction

The power dissipation and the thermal resistance of the
heatsinkdetermine the heatsink temperature rise. When
the same heatsink size is used as in a conventional
amplifier, the maximum heatsink temperature
decreases and also the maximum junction temperature,
which extends the life of this semiconductor device.
The maximum dissipation with music-like input signals
decreases by 40%.

It is clear that the use of the TDA1563Q saves a significant
amount of energy. The maximum supply current
decreases by approximately 32%, which reduces the
dissipation in the amplifier as well in the whole supply
chain. The TDA1563Q allows a heatsink size reduction of
approximately 50% or a heatsink temperature decrease of
40% when the heatsink size is not changed.

Advantage of the concept used by the TDA1563Q

The TDA1563Q is highly efficient under all conditions,
because it uses a SE capacitor to create a non-dissipating
half supply voltage. Other concepts rely on both input
signals being the same in amplitude and phase. With the
concept of an SE capacitor, it does not matter what kind of
signal processing is done on the input signals.
For example, amplitude difference, phase shift or delays
betweenboth input signals, or other DSP processing,have
no impact on the efficiency.

handbook, halfpage

MGS824

Supply
current

reduction of

32%

Heatsink

size

reduction of

50%

Same heatsink

size

Same junction

temperature

Heatsink

temperature

reduction of

40%

Power

dissipation

reduction of 40%

at Po = 1.6 W

VP = 14.4 V

choice

Fig.27 Heatsink design

2000 Feb 09 25

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

INTERNAL PIN CONFIGURATIONS

PIN NAME EQUIVALENT CIRCUIT

1, 2, 16,
17 and 3

IN1+, IN1−, IN2−,
IN2+ and CIN

4C

SE

6 MODE

7, 11 OUT1−, OUT2+

MGR182

1, 2, 16, 17

3

V

P1, VP2

V

P1, VP2

MGR183

4

V

P2

V

P1

MGR184

6

MGR185

4

V

P1, VP2

7, 11

2000 Feb 09 26

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

8, 10 OUT1+, OUT2−

12 SC

14, 15 PROT, CLIP

PIN NAME EQUIVALENT CIRCUIT

MGR186

4

V

P1, VP2

8, 10

MGR187

12

V

P2

MGR188

14, 15

V

P2

2000 Feb 09 27

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

PACKAGE OUTLINE

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

SOT243-1

0 5 10 mm

scale

D

L

E

A

c

A

2

L

3

Q

w M

b

p

1

d

D

Z

e

e

x

h

117

j

E

h

non-concave

97-12-16
99-12-17

DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)

SOT243-1

view B: mounting base side

m

2

e

v M

B

UNIT A e

1

A2bpcD

(1)

E

(1)

Z

(1)

deD

h

LL3m

mm

17.0

15.5

4.6

4.4

0.75

0.60

0.48

0.38

24.0

23.6

20.0

19.6

10 2.54

v

0.8

12.2

11.8

1.27

e

2

5.08

2.4

1.6

E

h

6

2.00

1.45

2.1

1.8

3.4

3.1

4.3

12.4

11.0

Qj

0.4w0.03

x

2000 Feb 09 28

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

SOLDERING
Introduction to soldering through-hole mount

packages

This text gives a brief insight to wave, dip and manual
soldering.Amorein-depthaccountofsolderingICscanbe
found in our

“Data Handbook IC26; Integrated Circuit

Packages”

(document order number 9398 652 90011).

Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.

Soldering by dipping or by solder wave

The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.

Thetotal contact time of successive solder waves must not
exceed 5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T

stg(max)

). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

Manual soldering

Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.

Suitability of through-hole mount IC packages for dipping and wave soldering methods

Note

1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

PACKAGE

SOLDERING METHOD

DIPPING WAVE

DBS, DIP, HDIP, SDIP, SIL suitable suitable

(1)

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

2000 Feb 09 29

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

NOTES

2000 Feb 09 30

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

NOTES

2000 Feb 09 31

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TDA1563Q

NOTES

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

2000

69

Philips Semiconductors – a w orldwide compan y

For all other countries apply to: Philips Semiconductors,

International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

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Printed in The Netherlands 753503/25/02/pp32 Date of release:2000 Feb 09 Document order number: 9397 750 06309