Datasheet TDA1562Q-N1, TDA1562Q-N2-S10, TDA1562Q-N1-S10, TDA1562Q-N2 Datasheet (Philips)

DATA SH EET

Preliminary specification
File under Integrated Circuits, IC01

1998 Apr 07

INTEGRATED CIRCUITS

TDA1562Q

70 W high efficiency power
amplifier with diagnostic facility

1998 Apr 07 2

Philips Semiconductors Preliminary specification

70 W high efficiency power amplifier
with diagnostic facility

TDA1562Q

FEATURES

• Very high output power, operating from a single low
supply voltage

• Low power dissipation, when used for music signals

• Switches to low output power at too high case

temperatures

• Few external components

• Fixed gain

• Differential inputs with high common mode rejection

• Mode select pin (on, mute and standby)

• Status I/O pin (class-H, class-B and fast mute)

• All switching levels with hysteresis

• Diagnostic pin with information about:

– Dynamic Distortion Detector (DDD)
– Any short-circuit at outputs
– Open load detector
– Temperature protection.

• No switch-on or switch-off plops

• Fast mute on supply voltage drops

• Quick start option (e.g. car-telephony/navigation)

• Low (delta) offset voltage at the outputs

• Load dump protection

• Short-circuit safe to ground, supply voltage and across

the load

• Low power dissipation in any short-circuit condition

• Protected against electrostatic discharge

• Thermally protected

• Flexible leads.

GENERAL DESCRIPTION

The TDA1562Q is a monolithic integrated 70 W/4 Ω
Bridge-Tied Load (BTL) class-H high efficiency power
amplifier in a 17-lead DIL-bent-SIL plastic power
package.

The device can be used for car audio systems (e.g. car,
radio and boosters) as well as mains fed applications (e.g.
midi/mini audio combinations and TV sound).

QUICK REFERENCE DATA

Test conditions: V

P

= 14.4 V; RL=4Ω; Rs=0Ω; f = 1 kHz; T

amb

=25°C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

P

supply voltage operating 8 14.4 18 V

non-operating −−30 V
load dump −−45 V

I

q(tot)

total quiescent current on and mute;

RL= open circuit

− 110 150 mA

I

stb

standby current standby − 150µA

V

OO

 output offset voltage on and mute −−100 mV

∆V

OO

 delta output offset voltage on ↔ mute −−30 mV

G

v

voltage gain 25 26 27 dB

Z

i(dif)

 differential input impedance 90 150 − kΩ

P

o

output power THD = 0.5% 45 55 − W

THD = 10% 60 70 − W

THD total harmonic distortion P

o

=1W − 0.03 − %

P

o

=20W − 0.06 − %

DDD active − 10 − %
SVRR supply voltage ripple rejection on and mute 60 70 − dB
CMRR common mode rejection ratio on 70 80 − dB
ISRR input signal rejection ratio mute 80 90 − dB
V

n(o)

noise output voltage on − 100 150 µV

1998 Apr 07 3

Philips Semiconductors Preliminary specification

70 W high efficiency power amplifier
with diagnostic facility

TDA1562Q

ORDERING INFORMATION

BLOCK DIAGRAM

TYPE NUMBER

PACKAGE

NAME DESCRIPTION VERSION

TDA1562Q DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1

Fig.1 Block diagram.

handbook, full pagewidth

POWER­STAGE

PREAMP

status I/O

VP*

VP*

75
kΩ

−

+

C1+C1−

FEEDBACK

CIRCUIT

TDA1562Q

POWER­STAGE

CLASS-B
CLASS-H

FAST MUTE

TEMPERATURE

SENSOR

LOAD DUMP

PROTECTION

STANDBY

MUTE

ON

LOAD

DETECTOR

DYNAMIC

DISTORTION

DETECTOR

DIAGNOSTIC

INTERFACE

TEMPERATURE

PROTECTION

CURRENT

PROTECTION

LIFT-SUPPLY

LIFT-SUPPLY

disable

disable

16

mode

select

4

1

IN+

35

75
kΩ

15 kΩ

reference
voltage

PREAMP

−

+

2

IN−

14

V

ref

17

signal

GND

C2+C2−

OUT−

15 13 6

PGND1 PGND2

MGL264

12

11

diagnostic

OUT+

7

8

910

V

P2

V

P1

1998 Apr 07 4

Philips Semiconductors Preliminary specification

70 W high efficiency power amplifier
with diagnostic facility

TDA1562Q

PINNING

SYMBOL PIN DESCRIPTION

IN+ 1 signal input (positive)
IN− 2 signal input (negative)
C1− 3 negative terminal of lift electrolytic

capacitor 1
MODE 4 mode select input
C1+ 5 positive terminal of lift electrolytic

capacitor 1
PGND1 6 power ground 1
OUT+ 7 positive output
DIAG 8 diagnostic output (open collector)
V

P1

9 supply voltage 1

V

P2

10 supply voltage 2
OUT− 11 negative output
PGND2 12 power ground 2
C2+ 13 positive terminal of lift electrolytic

capacitor 2

V

ref

14 internal reference voltage
C2− 15 negative terminal of lift electrolytic

capacitor 2
STAT 16 status I/O
SGND 17 signal ground

Fig.2 Pin configuration.

handbook, halfpage

TDA1562Q

MGL263

1
2
3
4
5
6
7
8

9
10
11
12
13
14
15
16
17

IN+
IN−

C1−

MODE

C1+

PGND1

OUT+

DIAG

V

P1

V

P2

OUT−

PGND2

C2+
V

ref

C2−

STAT

SGND

1998 Apr 07 5

Philips Semiconductors Preliminary specification

70 W high efficiency power amplifier
with diagnostic facility

TDA1562Q

FUNCTIONAL DESCRIPTION

The TDA1562Q contains a mono class-H BTL output
power amplifier. At low output power, up to 18 W, the
device operates as a normal BTL amplifier. When a larger
output voltage swing is required, the internal supply
voltage is lifted by means of the external electrolytic
capacitors. Due to this momentarily higher supply voltage
the obtainable output power is 70 W.

In normal use, when the output is driven with music-like
signals, the high output power is only needed during a
small percentage of time. Under the assumption that a
music signal has a normal (Gaussian) amplitude
distribution, the reduction in dissipation is about 50% when
compared to a class-B output amplifier with the same
output power. The heatsink should be designed for use
with music signals. If the case temperature exceeds
120 °C, the device will switch back from class-H to class-B
operation. The high power supply voltage is then disabled
and the output power is limited to 20 W.

When the supply voltage drops below the minimum
operating level, the amplifier will be muted immediately.

Mode select input (pin MODE)

This pin has 3 modes:

1. LOW, ‘standby’: the complete circuit is switched off,
the supply current is very low

2. MID, ‘mute’: the circuit is switched on, but the input
signal is suppressed

3. HIGH, ‘on’: normal operation, the input signal is
amplified by 26 dB.

When the circuit is switched from mute to on or vice versa
the actual switching takes place at a zero crossing of the
input signal. The circuit contains a quick start option, i.e.
when it is switched directly from standby to on,
the amplifier is fully operational within 50 ms (important for
applications like car telephony and car navigation).

Status I/O input (pin STAT)

I

NPUT

This input has 3 possibilities:

1. LOW, ‘fast mute’: the circuit remains switched on, but
the input signal is suppressed

2. MID, ‘class-B’: the circuit operates as class-B
amplifier, the high power supply voltage is disabled,
independent of the case temperature

3. HIGH, ‘class-H’: the circuit operates as class-H
amplifier, the high power supply voltage is enabled,
independent of the case temperature.

When the circuit is switched from fast mute to class-B/H or
vice versa the switching is immediately carried out. When
the circuit is switched from class-B to class-H or vice versa
the actual switching takes place at a zero crossing of the
input signal.

O

UTPUT

This output has 3 possibilities:

1. LOW, ‘mute’: acknowledge of muted amplifier

2. MID, ‘class-B’: the circuit operates as class-B
amplifier, the high power supply voltage is disabled,
caused by the case temperature Tc> 120 °C

3. HIGH, ‘class-H’: the circuit operates as class-H
amplifier, the high power supply voltage is enabled,
because the case temperature Tc< 120 °C.

When the circuit is switched from class-B to class-H or vice
versa the actual switching takes place at a zero crossing
of the input signal.

The status I/O pins of maximum 8 devices may be tied
together for synchronizing purposes.

1998 Apr 07 6

Philips Semiconductors Preliminary specification

70 W high efficiency power amplifier
with diagnostic facility

TDA1562Q

Fig.3 Switching characteristics.

handbook, full pagewidth

on

mute

0

supply

voltage

reference

voltage

mode select

input

status I/O

input

HIGH

MID

LOW

HIGH

MID

class-H (Tc < 120 °C)

class-B (Tc > 120 °C)

LOW

status I/O

output

HIGH

MID

LOW

V

ref

VRT

0

output voltage

across load

0

zerocross change

class B/H-operation

zerocross mute

function

fast mute

function

quick start

mute

supply mute

function

MGL272

1998 Apr 07 7

Philips Semiconductors Preliminary specification

70 W high efficiency power amplifier
with diagnostic facility

TDA1562Q

Diagnostic output (pin DIAG)

D

YNAMIC DISTORTION DETECTOR (DDD)

At the onset of clipping of the output stages, the DDD
becomes active. This information can be used to drive a
sound processor or DC-volume control to attenuate the
input signal and so limit the distortion.

S

HORT-CIRCUIT PROTECTION

When a short-circuit occurs at the outputs to ground or to
the supply voltage, the output stages are switched off.
They will be switched on again approximately 20 ms after
removing the short-circuit. During this short-circuit
condition the diagnostic output is continuously LOW.

When a short-circuit occurs across the load, the output
stages are switched off during approximately 20 ms. After
that time is checked during approximately 50 µs whether
the short-circuit is still present. During this short-circuit
condition the diagnostic output is LOW for 20 ms and high
for 50 µs. The power dissipation in any short-circuit
condition is very low.

T

EMPERATURE DETECTION

Just before the temperature protection becomes active the
diagnostic output becomes continuously LOW.

Load detection: directly after the circuit is switched from
standby to mute or on, a build in detection circuit checks
whether a load is present. The results of this check can be
detected at the diagnostic output, by switching the mode
select input in the mute mode.

Since the diagnostic output is an open collector output,
more devices can be tied together.

Fig.4 Diagnostic information.

handbook, full pagewidth

HIGH

MID

LOW

mode select

input

diagnostic

output

output voltage

across load

0

HIGH

LOW

no load

clipping signal

short-circuit to

supply or ground

short-circuit
across load

t

MGL265

1998 Apr 07 8

Philips Semiconductors Preliminary specification

70 W high efficiency power amplifier
with diagnostic facility

TDA1562Q

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. T

j

is a theoretical temperature which is based on a simplified representation of the thermal behaviour of the device.

Tj=Tc+P×R

th(j-c)

, where R

th(j-c)

is a fixed value to be used for the calculation of Tj. The rating for Tj limits the

allowable combinations of power dissipation P and case temperature Tc (in accordance with IEC 747-1).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

P

supply voltage operating − 18 V

non-operating − 30 V
load dump; t

r

> 2.5 ms;

T = 50 ms

− 45 V

I

OSM

non-repetitive peak output current − 10 A
repetitive peak output current − 8A

V

sc

short-circuit safe voltage − 18 V

T

stg

storage temperature −55 +150 °C

T

amb

ambient temperature −40 −°C

T

j

junction temperature note 1 − 150 °C

P

tot

total power dissipation − 60 W

Fig.5 Behaviour as a function of temperature.

handbook, full pagewidth

class-H

maximum output

voltage swing

diagnostic

output

status I/O: high

status I/O: open

MGL266

class-B

0

HIGH

LOW

status I/O

output

HIGH

MID

LOW

120 145

Tj (°C)

150 160100

1998 Apr 07 9

Philips Semiconductors Preliminary specification

70 W high efficiency power amplifier
with diagnostic facility

TDA1562Q

THERMAL CHARACTERISTICS

DC CHARACTERISTICS

V

P

= 14.4 V; RL=4Ω; T

amb

=25°C; measurements in accordance with Fig.10; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-c)

thermal resistance from junction to case 1.5 K/W

R

th(j-a)

thermal resistance from junction to ambient in free air 40 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies V

P1

and VP2 (pins 9 and 10)

V

P

supply voltage 8 14.4 18 V

V

th+

supply threshold voltage mute → on −−9V

V

th−

supply threshold voltage on → mute 7 −− V

V

PH1

hysteresis (V

th+

− V

th−

)−200 − mV

I

q

quiescent current on and mute;

RL= open circuit

− 110 150 mA

I

stb

standby current standby − 150µA

Amplifier outputs OUT+ and OUT− (pins 7 and 11)

V

O

DC output voltage on and mute − 6.5 − V

V

OO

 output offset voltage on and mute −−100 mV

∆V

OO

 delta output offset voltage on ↔ mute −−30 mV

Mode select input MODE (pin 4)

V

I

input voltage range 0 − V

p

V

I

I

input current V

MODE

= 14.4 V −−20 µA

V

th1+

threshold voltage standby → mute −−2V

V

th1−

threshold voltage mute → standby 1 −−V

V

msH1

hysteresis (V

th1+

− V

th1−

)−200 − mV

V

th2+

threshold voltage mute → on −−4.2 V

V

th2−

threshold voltage on → mute 3.3 −− V

V

msH2

hysteresis (V

th2+

− V

th2−

)−200 − mV

Status I/O STAT (pin 16)

P

IN STAT AS INPUT

V

st

input voltage 0 − V

P

V

I

stH

HIGH-level input current V

STAT

= 14.4 V −−4mA

I

stL

LOW-level input current V

STAT

=0V −−−400 µA

V

th1+

threshold voltage fast mute → class B −−2V

V

th1−

threshold voltage class B → fast mute 1 −− V

V

stH1

hysteresis (V

th1+

− V

th1−

)−200 − mV

V

th2+

threshold voltage class B → class H −−4.2 V

V

th2−

threshold voltage class H → class B 3.3 −− V

V

stH2

hysteresis (V

th2+

− V

th1−

)−200 − mV

1998 Apr 07 10

Philips Semiconductors Preliminary specification

70 W high efficiency power amplifier
with diagnostic facility

TDA1562Q

PIN STAT AS OUTPUT
I

st(mute)

mute acknowledge sink current 2.2 −− mA

V

st(mute)

mute acknowledge output voltage Ist= 2.2 mA −−0.5 V

I

st(clB)

class B operation output current 15 −− µA

V

st(clB)

class B operation output voltage I

Ist

=15µAI 2.0 − 3.0 V

I

st(clH)

class H operation source current −140 −−µA

V

st(clH)

class H operation output voltage Ist= −140 µAV

P

−2.5 −− V

T

c(th)

threshold case temperature sensor − 120 −°C

Diagnostic output DIAG (pin 8)

V

DIAG

output voltage active LOW −−0.6 V

R

L

load resistance for open load
detection

100 −− Ω

T

j(th)

threshold junction temperature
sensor

− 145 −°C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1998 Apr 07 11

Philips Semiconductors Preliminary specification

70 W high efficiency power amplifier
with diagnostic facility

TDA1562Q

Fig.6 Supply voltage transfer characteristic.

handbook, full pagewidth

V

PH1

V

th−

V

th+

MGL267

fast mute

on-mode

V

P

Fig.7 Mode select transfer characteristic.

handbook, full pagewidth

V

msH1

V

msH2

V

ms

V

th1−

V

th1+

V

th2−

V

th2+

MGL268

standby

mute

on-mode

Fig.8 Status I/O transfer characteristic.

handbook, full pagewidth

V

stH1

V

stH2

V

th1−

V

th1+

V

th2−

V

th2+

MGL269

fast mute

class-B

class-H

V

st

1998 Apr 07 12

Philips Semiconductors Preliminary specification

70 W high efficiency power amplifier
with diagnostic facility

TDA1562Q

AC CHARACTERISTICS

V

P

= 14.4; RL=4Ω; Rs=0Ω; f = 1 kHz; T

amb

=25°C; measurements in accordance with Fig.10; unless otherwise

specified.

Notes

1. The low frequency power roll-off is determined by the value of the electrolytic lift capacitors.

2. The low frequency gain roll-off is determined by the value of the input coupling capacitors.

3. Supply voltage ripple rejection is measured across R

L

; V

ripple=Vripple

max.=2VPP.

4. Common mode rejection ratio is measured across R

L

; Vcm=Vcmmax.=2VPP. CMMR [dB] = differential gain
(Gv) + common mode attenuation (Ac), (Test setup according Fig. 9; mismatch of input coupling capacitors
excluded).

5. Input signal rejection ratio is measured across RL; Vi=V

i(max)

=2VPP. ISSR [dB] = different gain (Gv) + mute

attenuation (Am)

6. Noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz.

7. Noise output voltage is independent of source impedance Rs.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

P

o

output power class-B; THD = 10% 16 20 − W

class-H; THD = 10% 60 70 − W
class-H; THD = 0.5% 45 55 − W

f

ro(h)(P)

high frequency power
roll-off

Po (−1 dB); THD = 0.5%;
note 1

− 20 − kHz

THD total harmonic distortion P

o

=1W − 0.03 − %

P

o

=20W − 0.06 − %

DDD active − 10 − %

G

v

voltage gain 25 26 27 dB

f

ro(h)(G)

high frequency gain
roll-off

Gv (−1 dB); note 2 20 −−kHz

Z

i(dif)

 differential input

impedance

90 150 − kΩ

SVRR supply voltage ripple

rejection

on and mute; note 3 60 70 − dB

standby; note 3 90 − dB

CMRR common mode rejection

ratio

on; note 4 70 80 − dB

ISRR input signal rejection

ratio

mute; note 5 80 90 − dB

V

n(o)

noise output voltage on; note 6 − 100 150 µV

mute; notes 6 and 7 − 60 −µV

1998 Apr 07 13

Philips Semiconductors Preliminary specification

70 W high efficiency power amplifier
with diagnostic facility

TDA1562Q

QUALITY SPECIFICATION

Quality in accordance with

“SNW-FQ-611 part E”

, if this type is used as an audio amplifier.

Fig.9 CMRR test setup.

handbook, full pagewidth

TDA1562

supply

10

MGL270

7

11

1217

14

2

1

6

+ V

P

R

L

V

CM

C

i

C

i

GND

9

SGND PGND1 PGND2

1998 Apr 07 14

Philips Semiconductors Preliminary specification

70 W high efficiency power amplifier

with diagnostic facility

TDA1562Q

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TEST AND APPLICATION INFORMATION

handbook, full pagewidth

POWER­STAGE

AMP.

status I/O

VP*

VP*

75
kΩ

10
kΩ

RL =
4 Ω

−

+

C1+C1−

FEEDBACK

CIRCUIT

TDA1562Q

POWER­STAGE

CLASS-B
CLASS-H

FAST MUTE

TEMPERATURE

SENSOR

LOAD DUMP

PROTECTION

STANDBY

MUTE

ON

LOAD

DETECTOR

DYNAMIC

DISTORTION

DETECTOR

DIAGNOSTIC

INTERFACE

TEMPERATURE

PROTECTION

CURRENT

PROTECTION

LIFT-SUPPLY

LIFT-SUPPLY

disable

disable

16

mode
select

4

1

IN+

100 nF

35

4700 µF

2200
µF

100

nF

75
kΩ

15 kΩ

reference
voltage

AMP.

−

+

2

audio

source

1/2*R

s

1/2*R

s

IN−

14

V

ref

17

signal GND

100 nF

10 µF

C2+C2−

OUT−

15 13 6

GND

MGL271

12

11

diagnostic

OUT+

+ V

P

7

8

4700 µF

910

+ V

P

V

P2

V

P1

PGND1 PGND2

Fig.10 Test and application circuit.

1998 Apr 07 15

Philips Semiconductors Preliminary specification

70 W high efficiency power amplifier
with diagnostic facility

TDA1562Q

PACKAGE OUTLINE

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

SOT243-1

0 5 10 mm

scale

D

L

E

A

c

A

2

L

3

Q

w M

b

p

1

d

D

Z

e

e

x

h

117

j

E

h

non-concave

95-03-11
97-12-16

DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)

SOT243-1

view B: mounting base side

m

2

e

v M

B

UNIT A e

1

A2bpcD

(1)

E

(1)

Z

(1)

deD

h

LL3m

mm

17.0

15.5

4.6

4.2

0.75

0.60

0.48

0.38

24.0

23.6

20.0

19.6

10 2.54

v

0.8

12.2

11.8

1.27

e

2

5.08

2.4

1.6

E

h

6

2.00

1.45

2.1

1.8

3.4

3.1

4.3

12.4

11.0

Qj

0.4w0.03

x

1998 Apr 07 16

Philips Semiconductors Preliminary specification

70 W high efficiency power amplifier
with diagnostic facility

TDA1562Q

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

(order code 9398 652 90011).

Soldering by dipping or by wave

The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T

stg max

). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

Repairing soldered joints

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1998 Apr 07 17

Philips Semiconductors Preliminary specification

70 W high efficiency power amplifier
with diagnostic facility

TDA1562Q

NOTES

1998 Apr 07 18

Philips Semiconductors Preliminary specification

70 W high efficiency power amplifier
with diagnostic facility

TDA1562Q

NOTES

1998 Apr 07 19

Philips Semiconductors Preliminary specification

70 W high efficiency power amplifier
with diagnostic facility

TDA1562Q

NOTES

Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

© Philips Electronics N.V. 1998 SCA59
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. [phone], Fax. [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone]

Printed in The Netherlands 545102/1200/01/pp20 Date of release: 1998 Apr 07 Document order number: 9397 750 03043