Datasheet TDA1561Q-N2, TDA1561Q-N1 Datasheet (Philips)

DATA SH EET

Preliminary specification
Supersedes data of 1997 Jun 11
File under Integrated Circuits, IC01

1997 Aug 14

INTEGRATED CIRCUITS

TDA1561Q

2 × 23 W high efficiency car radio
power amplifier

1997 Aug 14 2

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

FEA TURES

• Low dissipation due to switching from Single-Ended
(SE) to Bridge-Tied Load (BTL) mode

• High Common Mode Rejection Ratio (CMRR)

• Mute/standby/operating/SE-only (mode select pin)

• Zero crossing mute and standby circuit

• Load dump protection circuit

• Short-circuit safe to ground, to supply voltage and

across load

• Loudspeaker protection circuit

• Device switches to single-ended operation at excessive

junction temperatures.

GENERAL DESCRIPTION

The TDA1561Q is a monolithic power amplifier in a 13 lead
single-in-line (SIL) plastic power package. It contains two
identical 23 W amplifiers. The dissipation is minimized by
switching from SE to BTL mode, only when a higher output
voltage swing is needed. The device is primarily
developed for car radio applications.

QUICK REFERENCE DATA

ORDERING INFORMATION

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

P

supply voltage DC biased 6.0 14.4 18 V

non operating −−30 V
load dump −−50 V

I

ORM

repetitive peak output current −−4A

I

q(tot)

total quiescent current RL= ∞−95 150 mA

I

stb

standby current − 150µA

Z

i

 input impedance − 60 − kΩ

P

o

output power RL = 4 Ω; EIAJ − 36 − W

THD 10% 21 23 − W

G

v

voltage gain 31 32 33 dB

CMRR common mode rejection ratio f = 1 kHz; R

s

=0Ω−80 − dB

SVRR supply voltage ripple rejection f = 1 kHz; R

s

=0Ω 45 55 − dB

∆V

O

 DC output offset voltage −−150 mV

α

cs

channel separation Rs=0kΩ 40 60 − dB

∆G

v

 channel unbalance −−1dB

TYPE

NUMBER

PACKAGE

NAME DESCRIPTION VERSION

TDA1561Q DBS13P plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm) SOT141-6

1997 Aug 14 3

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

BLOCK DIAGRAM

Fig.1 Block diagram.

handbook, full pagewidth

MLD214

REFERENCE

SOURCES

MUTE/STANDBY

THERMAL/

SHORT-CIRCUIT

PROTECTION

HIGHER

TEMPERATURE

BTL DISABLE

0.5V

P

MUTE

R

MUTE

R

7

V

P

12

3

13

2

1

IN1

IN2

CIN

MODE

1/2R

HV

4

GND1

10

GND2

6

5

11

9

8

OUT2

OUT2

OUT1

OUT1

C

TDA1561Q

P

11

1997 Aug 14 4

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

PINNING

SYMBOL PIN DESCRIPTION

IN1 1 input 1
HV

P

2 half supply voltage control input
MODE 3 mute/standby/operating/SE-only
GND1 4 ground 1
OUT1 5 inverting output 1
OUT1 6 non-inverting output 1
V

P

7 supply voltage
OUT2 8 inverting output 2
OUT2 9 non-inverting output 2
GND2 10 ground 2
C

11

11 electrolytic capacitor for

single-ended (SE) mode
CIN 12 common input
IN2 13 input 2

Fig.2 Pin configuration.

handbook, halfpage

MLD215

1
2
3
4
5
6
7
8

9
10
11
12
13

TDA1561Q

IN1

HV

GND1

OUT1

V

MODE

OUT1

OUT2

11

C

CIN

IN2

GND2

OUT2

P

P

1997 Aug 14 5

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

FUNCTIONAL DESCRIPTION

The TDA1561Q contains two identical amplifiers with
differential inputs. At low output power (up to output
amplitudes of 3 V (RMS) at VP= 14.4 V), the device
operates as a normal SE amplifier. When a larger output
voltage swing is needed, the circuit switches internally to
BTL operation.

With a sine wave input signal the dissipation of a
conventional BTL amplifier up to 2 W output power is more
than twice the dissipation of the TDA1561Q (see Fig.9).

In normal use, when the amplifier is driven with music-like
signals, the high (BTL) output power is only needed for a
small percentage of time. Under the assumption that a
music signal has a normal (Gaussian) amplitude
distribution, the dissipation of a conventional BTL amplifier
with the same output power is approximately 70% higher
(see Fig.10).

The heatsink has to be designed for use with music
signals. With such a heatsink, the thermal protection will
disable the BTL mode when the junction temperature
exceeds 145 °C. In this case the output power is limited to
5 W per amplifier.

The gain of each amplifier is internally fixed at 32 dB. With
the MODE pin, the device can be switched to the following
modes:

• Standby with low standby current (<50 µA)

• Mute condition, DC adjusted

• On, operation

• SE-only, operation (BTL disabled).

The device is fully protected against short-circuiting of the
output pins to ground and to the supply voltage. It is also
protected against short-circuiting the loudspeaker and
high junction temperatures. In the event of a permanent
short-circuit condition to ground or the supply voltage, the
output stage will be switched off causing a low dissipation.
With permanent short-circuiting of the loudspeaker, the
output stage will be repeatedly switched on and off.
The duty cycle in the ‘on’ condition is low enough to
prevent excessive dissipation.

To avoid plops during switching from ‘mute’ to ‘on’ or from
‘on’ to ‘mute/standby’ while an input signal is present, a
built-in zero-crossing detector allows only switching at
zero input voltage. However, when the supply voltage
drops below 6 V (e.g. engine start), the circuit mutes
immediately avoiding clicks coming from electronic
circuitry preceding the power amplifier.

The voltage of the SE electrolytic capacitor (pin 11) is
always kept at 0.5V

P

by means of a voltage buffer (see
Fig.1). The value of this capacitor has an important
influence on the output power in SE mode, especially at
low signal frequencies, a high value is recommended to
minimize dissipation at low frequencies.

1997 Aug 14 6

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. The value of R

th(c-h)

depends on the application (see Fig.3).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

P

supply voltage operating − 18 V

non operating − 30 V
load dump; tr> 2.5 ms − 50 V

V

P(sc)

short-circuit safe voltage − 18 V

V

rp

reverse polarity voltage − 6V

I

OSM

non-repetitive peak output current − 6A

I

ORM

repetitive peak output current − 4A

P

tot

total power dissipation − 60 W

T

stg

storage temperature −55 +150 °C

T

vj

virtual junction temperature − 150 °C

T

amb

operating ambient temperature −40 −°C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-c)

thermal resistance from junction to case see note 1 1.3 K/W

R

th(j-a)

thermal resistance from junction to ambient 40 K/W

1997 Aug 14 7

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

Heatsink design

There are two parameters that determine the size of the
heatsink. The first is the rating for the virtual junction
temperature and the second is the ambient temperature at
which the amplifier must still deliver its full power in the
BTL mode.

With a conventional BTL amplifier, the maximum power
dissipation with a music-like signal (at each amplifier) will
be approximately two times 5 W. At a virtual junction
temperature of 150 °C and a maximum ambient
temperature of 60 °C, R

th(vj-c)

= 1.3 K/W and

R

th(c-h)

= 0.2 K/W, the thermal resistance of the heatsink

should be:

Compared to a conventional BTL amplifier, the TDA1561Q
has a higher efficiency. The thermal resistance of the
heatsink should be:

150 60–

25×

----------------------

1.3– 0.2– 7.5 K/W=

1.7

150 60–

25×

----------------------





1.3– 0.2– 13.8 K/W=

Fig.3 Thermal equivalent resistance network.

handbook, halfpage

3.6 K/W

0.6 K/W

3.6 K/W

virtual junction

OUT 1 OUT 1

case

3.6 K/W

0.6 K/W

3.6 K/W

OUT 2 OUT 2

MGC424

0.1 K/W

1997 Aug 14 8

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

DC CHARACTERISTICS

V

P

= 14.4 V; T

amb

=25°C; measured in Fig.6; unless otherwise specified.

Note

1. The circuit is DC biased at V

P

= 6 to 18 V and AC operating at VP=8to18V.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

V

P

supply voltage note 1 6.0 14.4 18.0 V

I

q

quiescent current RL= ∞−95 150 mA

I

stb

standby current − 150µA

V

C

average electrolytic capacitor
voltage at pin 11

− 7.1 − V

∆V

O

 DC output offset voltage on state −−150 mV

mute state −−50 mV
Mode select switch (see Fig.4)
V

ms

voltage at mode select pin
(pin 3)

standby condition 0 − 1V

mute condition 2 − 3V

on condition (SE/BTL mode) 4 − 5.5 V

on condition (SE mode only) 7.5 − V

P

V

I

ms

switch current through pin 3 Vms=5V −−40 µA

Protection

T

dis

BTL disable temperature − 145 −°C

Fig.4 Switching levels of mode select switch.

handbook, halfpage

,,,,,

,

0

MLD216

V

1

2

3

4

5

6

7

8

P

SE Only

SE/BTL

Standby

Mute

1997 Aug 14 9

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

AC CHARACTERISTICS

V

P

= 14.4 V; RL=4Ω; C11= 1000 µF; f = 1 kHz; T

amb

=25°C; measured in Fig.6; unless otherwise specified.

Notes

1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz.

2. Frequency response externally fixed (input capacitors determine low frequency roll-off).

3. The SE to BTL switch voltage level depends on V

P

.

4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz.

5. Noise output voltage is independent of Rs (see Fig.6)(Vi= 0 V).

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

P

o

output power THD = 1% 15 18 − W

THD = 10% 21 23 − W
EIAJ − 36 − W
V

P

= 13.2 V; THD = 0.5% − 14 − W

V

P

= 13.2 V; THD = 10% − 20 − W

THD total harmonic distortion P

o

= 1 W; f = 1 kHz; note 1 − 0.1 − %

P

d

dissipated power see Figs 9 and 10 W

B

p

power bandwidth THD = 1%; Po= −1dB

with respect to 15 W

− 20 to
15000

− Hz

f

ro(l)

low frequency roll-off −1 dB; note 2 − 25 − Hz

f

ro(h)

high frequency roll-off −1 dB 130 −−kHz

G

v

closed loop voltage gain 31 32 33 dB

SVRR supply voltage ripple rejection R

s

=0Ω; V

ripple

= 2 V (p-p)
on; f = 1 kHz 45 60 − dB
mute; f = 1 kHz − 90 − dB
standby; f = 100 Hz to 10 kHz 80 −−dB

CMRR common mode rejection ratio R

s

=0Ω; f = 1 kHz − 80 − dB

Z

i

 input impedance 45 60 75 kΩ

∆Z

i

 mismatch in input impedance − 1 − %

V

SE-BTL

SE to BTL switch voltage level note 3 − 3 − V

V

out

 output voltage-mute (RMS value) Vi= 1 V (RMS) − 50 100 µV

V

n(o)

noise output voltage on; Rs=0Ω; note 4 − 160 300 µV

on; R

s

=10kΩ; note 4 − 170 −µV

mute; note 5 − 20 −µV

α

cs

channel separation Rs=0Ω 40 60 − dB

∆G

v

 channel unbalance −−1dB

1997 Aug 14 10

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

TEST AND APPLICATION INFORMATION

Fig.5 Test diagram.

handbook, full pagewidth

220 nF

470 nF

4

8

9

11

5

6

73

1

2

12

13

10

220 nF

4 Ω

3.9 Ω

1000 µF

(16 V)

100
nF

3.9 Ω

10
nF

0.5V

P

0.5R

s

MLD223

TDA1561Q

4 Ω

3.9 Ω

10 nF

3.9 Ω

100 nF

input 2

input 1

R

s

R

s

1000 µF

16 V

220 nF

IN1

HV

P

GND1

OUT1

V

P

MODE

OUT1

OUT2

C

11

CIN

IN2

GND2

OUT2

1997 Aug 14 11

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

Fig.6 Application diagram.

handbook, full pagewidth

220 nF

100 nF

2 x 220 nF

4

8

9

11

5

6

73

1

2

12

13

power ground

signal ground

10

220 nF

1000 µF

16 V

100 nF

4 Ω

3.9 Ω

1000 µF

(16 V)

10
nF

3.9 Ω

100
nF

0.5V

P

MLD213

TDA1561Q

4 Ω

3.9 Ω

10 nF

3.9 Ω

100 nF

IN1

HV

P

GND1

OUT1

V

P

MODE

OUT1

OUT2

C

11

CIN

IN2

GND2

OUT2

(1)

R

s

R

s

0.5R

s

Connect Boucherot filter to pin 4 respectively pin 10 with the shortest possible connection.

1997 Aug 14 12

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

handbook, full pagewidth

MGK182

Mode
select

gnd

mss

Vp

GND

In1 In2sgnd

Cool Power

m

Out 2Out 1

TDA1561Q

4 × 220 nF

86.36

43.18

Fig.7 PCB layout (component side) for the application of Fig.6.

Dimensions in mm.

1997 Aug 14 13

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

handbook, full pagewidth

MGK183

Mode

gnd

mss

Vp

GND

In2 In1sgnd

m

Out1Out2

86.36

43.18

Fig.8 PCB layout (soldering side) for the application of Fig.6.

Dimensions in mm.

1997 Aug 14 14

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

INTERNAL PIN CONFIGURATIONS

PIN NAME EQUIVALENT CIRCUIT

1,12,13 IN1, CIN, IN2

2HV

P

3 MODE

pin 1

pin 12

pin 13

V

P

MLD217

handbook, halfpage

MLD218

pin 2

handbook, halfpage

MLD221

pin 3

V

P

1997 Aug 14 15

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

5, 9 OUT1, OUT2

6, 8 OUT1, OUT2

11 C

11

PIN NAME EQUIVALENT CIRCUIT

handbook, halfpage

MLD220

V

P

pins 5, 9

handbook, halfpage

MLD219

V

P

pins 6, 8

MLD222

pin 11

1997 Aug 14 16

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

ADDITIONAL APPLICATION INFORMATION

Fig.9 Dissipation; sine wave driven.

handbook, halfpage

010

P

o

(W)

25

0

5

10

15

20

2

P

d

(W)

468

MBH692

(1)

(2)

Input signal 1 kHz, sinusoidal; VP= 14.4 V.
(1) For a conventional BTL amplifier.
(2) For TDA1561Q.

Fig.10 Dissipation; pink noise through IEC-268

filter.

handbook, halfpage

010

P

o

(W)

25

0

5

10

15

20

2

P

d

(W)

468

MBH693

(1)

(2)

(1) For a conventional BTL amplifier.

(2) For TDA1561Q.

Fig.11 IEC-268 filter.

430 Ω

input output

330 Ω

3.3
kΩ

3.3
kΩ

10
kΩ

91
nF

68
nF

470 nF2.2 µF 2.2 µF

MGC428

1997 Aug 14 17

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

handbook, full pagewidth

220 nF

pink
noise

100 nF

2×

220 nF

4

8

9

11

5

6

73

1

2

12

13

10

220 nF

4 Ω

3.9 Ω

1000 µF

(16 V)

10
nF

3.9 Ω

100
nF

1/2V

P

on condition

MGC427

TDA1561Q

4 Ω

3.9 Ω

10 nF

3.9 Ω

100 nF

IEC-268
FILTER

IN1

HV

P

GND1

OUT1

V

P

MODE

OUT1

OUT2

C

11

CIN

IN2

GND2

OUT2

Fig.12 Test and application diagram for dissipation measurements with a music-like signal (pink noise).

Fig.13 DC output voltage as a function of VP.

handbook, halfpage

08 24

V

P

(V)

V

O

(V)

12

0

4

8

16

MBH694

Vms=5V.

Fig.14 Quiescent current as a function of VP.

handbook, halfpage

08 24

V

P

(V)

I

q

(mA)

125

0

25

50

75

100

16

MBH695

Vms= 5 V; RI= ∞.

1997 Aug 14 18

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

Fig.15 IP as a function of Vms (pin 3).

handbook, halfpage

02 86

off mute

V

MODE

(V)

I

P

(mA)

160

0

40

80

120

4

MBH696

SE/BTL SE only

VP= 14.4 V; Vin= 0 mV; RI= ∞.

Fig.16 Ims as a function of Vms.

handbook, halfpage

02 86

V

MODE

(V)

I

MODE

(µA)

80

64

0

16

32

48

4

MBH697

Fig.17 Output power as a function of VP.

handbook, halfpage

8.4 10.8 1815.6

(3)

(2)

(1)

VP (V)

P

o

(W)

60

0

20

40

13.2

MBH698

Both channels driven.
(1) EIAJ.
(2) THD = 10%.
(3) THD = 1%.

Fig.18 THD + noise as a function of Po.

handbook, halfpage

10

2

10

1

10

−1

10

−2

MBH699

10

−2

10

−1

1

THD + N

(%)

10

Po (W)

10

2

(1)

(2)

(3)

(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.

1997 Aug 14 19

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

Fig.19 THD + noise as a function of frequency.

handbook, halfpage

10

1

10

−1

10

−2

MBH700

10 10

2

10

3

10

4

f (Hz)

THD + N

(%)

10

5

(1)

(2)

(1) Po=10W.
(2) Po=1W.

Fig.20 Power bandwidth at THD = 1%.

handbook, halfpage

16

18

20

14

12

10

MBH701

10 10

2

10

3

10

4

f (Hz)

B

p

(W)

10

5

(1)
(2)

(1) For OUT2.
(2) For OUT1.

Fig.21 Gain as a function of frequency.

handbook, halfpage

32

34

36

30

28

26

MBH702

10 10

2

10

3

10

4

f (Hz)

G

v

(dB)

10

6

10

5

Vin=50mV.

Fig.22 SVRR as a function of frequency.

handbook, halfpage

−120

−100

−80

−60

−40

−20

MBH703

10 10

2

10

3

10

4

f (Hz)

SVRR

(dB)

10

5

on

mute

off

V

ripple(p-p)

=2V.

1997 Aug 14 20

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

Fig.23 Channel separation as a function of

frequency.

handbook, halfpage

−100

−60

−40

−20

0

MBH704

10 10

2

10

3

10

4

f (Hz)

α

cs

(dB)

10

5

(2)

(1)

(1) Po=1W.
(2) Po=10W.

Fig.24 Mode select circuit.

handbook, halfpage

MBH690

47 µF

10 kΩ

MODE5 V/40 µA

1997 Aug 14 21

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

Fig.25 Output waveforms.

handbook, full pagewidth

MBH691

0 1 2 t (ms) 3

1/2 V

P

1/2 V

P

0

−V

P

V

P

V

P

0

V

P

V

load

(1) (2) (3)

V

master

V

slave

0

See Fig.5:
V

load=V6−V5

or V8− V

9

V

master=V6

or V

8

V

slave=V5

or V

9

1997 Aug 14 22

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

PACKAGE OUTLINE

UNIT A e

1

A2bpcD

(1)

E

(1)

Z

(1)

deD

h

LL3m

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

17.0

15.5

4.6

4.2

0.75

0.60

0.48

0.38

24.0

23.6

20.0

19.6

10 3.4

v

0.8

12.2

11.8

1.7

e

2

5.08

2.4

1.6

E

h

6

2.00

1.45

2.1

1.8

3.4

3.1

4.3

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

12.4

11.0

SOT141-6

0 5 10 mm

scale

Qj

0.25w0.03

x

D

L

E

A

c

A

2

m

L

3

Q

w M

b

p

1

d

D

Z

e

2

e

e

x

h

113

j

E

h

non-concave

view B: mounting base side

95-03-11
97-12-16

DBS13P: plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm)

SOT141-6

v M

B

1997 Aug 14 23

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TDA1561Q

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

(order code 9398 652 90011).

Soldering by dipping or by wave

The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T

stg max

). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

Repairing soldered joints

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

© Philips Electronics N.V. 1997 SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
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Indonesia: see Singapore
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Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone], Fax. [phone]
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Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

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Middle East: see Italy

Printed in The Netherlands 547027/1200/05/pp24 Date of release: 1997Aug 14 Document order number: 9397 750 02732