Datasheet STW13NK100Z Specification

N-channel 1000V - 0.56Ω - 13A - TO-247

Zener - Protected SuperMESH™ PowerMOSFET

General features

V

Typ e

STW13NK100Z 1000 V < 0.70 Ω 13 A 350W

■ Extremely high dv/dt capability

■ 100% avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing repeatibility

DSS

(@Tjmax)

Description

R

DS(on)ID

P

STW11NK100Z

STW13NK100Z

W

TO-247

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.

Applications

■ Switching application

Order codes

Part number Marking Package Packaging

STW13NK100Z W13NK100Z TO-247 Tube

Internal schematic diagram

August 2006 Rev 5 1/14

www.st.com

14

Contents STW13NK100Z

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/14

STW13NK100Z Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

V

I

V

V

DM

P

DS

DGR

GS

I

D

I

D

(1)

TOT

Drain-source voltage (VGS = 0) 1000 V

Drain-gate voltage (RGS = 20KΩ) 1000 V

Gate-source voltage ± 30 V

Drain current (continuous) at TC = 25°C 13 A

Drain current (continuous) at TC=100°C 8.2 A

Drain current (pulsed) 52 A

Total dissipation at TC = 25°C 350 W

Derating Factor 2.7 W/°C

V

ESD (G-S)

dv/dt

T

J

T

stg

1. Pulse width limited by safe operating area

2. ISD ≤ 8.3 A, di/dt ≤ 200A/µs, VDD ≤ V

Gate source ESD(HBM-C=100pF, R=1,5KΩ) 6000 V

(2)

Peak diode recovery voltage slope 4 V/ns

Operating junction temperature
Storage temperature

, Tj ≤ T

(BR)DSS

JMAX

-55 to 150 °C

Table 2. Thermal data

Symbol Parameter Value Unit

R

thj-case

R

thj-a

T

Thermal resistance junction-case Max 0.36 °C/W

Thermal resistance junction-ambient Max 50 °C/W

Maximum lead temperature for soldering

l

purpose

300 °C

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

I

AR

E

Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)

Single pulse avalanche energy

AS

(starting Tj=25°C, Id=Iar, Vdd=50V)

13 A

700 mJ

3/14

Electrical ratings STW13NK100Z

Table 4. Gate-source zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

BV

Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30 V

GSO

1.1 Protection features of gate-to-source zener diodes

The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.

4/14

STW13NK100Z Electrical characteristics

2 Electrical characteristics

(T

=25°C unless otherwise specified)

CASE

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown
voltage

Zero gate voltage drain
current (V

GS

= 0)

Gate body leakage current
(VGS = 0)

Gate threshold voltage V

Static drain-source on
resistance

= 1mA, VGS= 0 1000 V

I

D

V

= Max rating,

DS

= Max rating,

V

DS

Tc = 125°C

V

= ± 20V ±10 µA

GS

= VGS, ID = 150 µA 3 3.75 4.5 V

DS

= 10V, ID = 6.5 A 0.56 0.70 Ω

V

GS

1

10

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

g

fs

C

C

C

C

osseq

t

d(on)

t

d(off)

Q
Q
Q

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. C

oss eq.

increases from 0 to 80% V

Forward transconductance V

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Equivalent output

(2)

.

capacitance

Turn-on delay time

t

Rise time

r

Off-voltage rise time

t

Fall time

f

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

is defined as a constant equivalent capacitance giving the same charging time as C

DSS

=15V, ID = 6.5 A 14 S

DS

=25V, f=1 MHz, VGS=0

V

DS

=0, V

V

GS

=500 V, ID= 7A,

V

DD

=4.7Ω, VGS=10V

R

G

=0V to 800V 227 pF

DS

(see Figure 16)

=800V, ID = 13A

V

DD

=10V

V

GS

6000

455
100

45
35

145

45

190

30

100

266 nC

when VDS

oss

µA
µA

pF
pF
pF

ns
ns
ns
ns

nC
nC

5/14

Electrical characteristics STW13NK100Z

Table 7. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

t

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Source-drain current 13 A

(1)

Source-drain current (pulsed) 52 A

(2)

Forward on voltage ISD=8.3A, VGS=0 1.6 V

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

=13 A,

I

SD

di/dt = 100A/µs,

=100 V, Tj=25°C

V

DD

(see Figure 18)

=13 A,

I

SD

di/dt = 100A/µs,

=100V, Tj=150°C

V

DD

(see Figure 18)

820

12.7
31

1050

17.8
34

ns
µC

A

ns
µC

A

6/14

STW13NK100Z Electrical characteristics

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance

Figure 3. Output characterisics Figure 4. Transfer characteristics

7/14

Electrical characteristics STW13NK100Z

Figure 5. Transconductance Figure 6. Static drain-source on resistance

Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage

8/14

vs temperature

Figure 10. Normalized on resistance vs

temperature

STW13NK100Z Electrical characteristics

Figure 11. Source-drain diode forward

characteristics

Figure 13. Maximum avalanche

energy vs temperature

Figure 12. Normalized B

vs temperature

VDSS

9/14

Test circuit STW13NK100Z

3 Test circuit

Figure 14. Unclamped Inductive load test

circuit

Figure 16. Switching times test circuit for

resistive load

Figure 15. Unclamped Inductive waveform

Figure 17. Gate charge test circuit

Figure 18. Test circuit for inductive load

switching and diode recovery times

10/14

STW13NK100Z Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

11/14

Package mechanical data STW13NK100Z

TO-247 MECHANICAL DATA

DIM.

A 4.85 5.15 0.19 0.2 0

A1 2.20 2.60 0.086 0.102

b 1.0 1.40 0.039 0.055

b1 2.0 2.40 0.079 0.094

b2 3.0 3.40 0.118 0.134

c 0.40 0.80 0.015 0.03

D 19.85 20.15 0.781 0.793

E 15.45 15.75 0.608 0.620

e5.45 0.214

L 14.20 14.80 0.560 0.582

L1 3.70 4.30 0.14 0.17

L2 18.50 0.728

øP 3.55 3.65 0 .140 0.143

øR 4.50 5.50 0.17 7 0.216

S5.50 0.216

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

12/14

STW13NK100Z Revision history

5 Revision history

Table 8. Revision history

Date Revision Changes

22-Jun-2004 1 Target document

09-Sep-2004 2 Preliminary document

28-Jan-2005 3 Complete version with curves

18-Sep-2005 4 Figure 12 changed

01-Aug-2006 5 New template, no content change

13/14

STW13NK100Z

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