Page 1
STW12NC60
N-CHANNEL 600V - 0.48Ω - 12A TO-247
PowerMeshII MOSFET
TYPE V
DSS
R
DS(on)
I
D
STW12NC60 600V < 0.55Ω 12 A
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
(on) = 0.48Ω
DS
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area
figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt(1) Peak Diode Recovery voltage slope 3 V/ns
T
stg
T
(•)Pulse width limited by safe operating area
Drain-source Voltage (VGS= 0) 600 V
Drain-gate Voltage (RGS=20kΩ)
600 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC=25°C
Drain Current (continuos) at TC= 100°C
(●)
Drain Current (pulsed) 18 A
TotalDissipation at TC=25°C
12 A
8A
190 W
Derating Factor 1.52 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
j
(1)ISD≤11A, di/dt ≤100A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX.
1/8June 2000
Page 2
STW12NC60
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.66 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
=25°C, ID=IAR,VDD=50V)
j
I
= 250 µA, VGS=0
D
= Max Rating
V
DS
=0)
DS
GS
=0)
V
= Max Rating, TC= 125 °C
DS
= ±30V
V
GS
600 V
12 A
850 mJ
1 µA
50 µA
±100 nA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
V
DS=VGS,ID
= 10V, ID=6A
V
GS
V
DS>ID(on)xRDS(on)max,
= 250 µA
VGS=10V
234V
0.48 0.55 Ω
12 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance 275 pF
Reverse Transfer
Capacitance
DS>ID(on)xRDS(on)max,
ID=6A
V
= 25V,f = 1 MHz, VGS=0
DS
13 S
2150 pF
39 pF
2/8
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STW12NC60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
Q
Q
Q
r
g
gs
gd
Turn-on Delay Time
Rise Time
TotalGate Charge
Gate-Source Charge 13 nC
Gate-Drain Charge 28 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 25 ns
Cross-over Time 30 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 12 A
(2)
Source-drain Current (pulsed) 48 A
(1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 5.6 µC
Reverse Recovery Current 19 A
V
= 300V, ID=6A
DD
= 4.7Ω,VGS= 10V
R
G
(see test circuit, Figure 3)
V
= 480V, ID=12A,
DD
= 10V, RG=4.7Ω
V
GS
V
= 480V, ID=12A,
DD
= 4.7Ω, VGS=10V
R
G
(see test circuit, Figure 5)
ISD=12A,VGS=0
I
= 12 A, di/dt = 100A/µs,
SD
= 100V, Tj= 150°C
V
DD
(see test circuit, Figure 5)
20 ns
15 ns
65 90 nC
14 ns
1.6 V
590 ns
Thermal ImpedanceSafe Operating Area
3/8
Page 4
STW12NC60
Transfer CharacteristicsOutput Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Static Drain-source On Resistance
Capacitance Variations
4/8
Page 5
STW12NC60
Normalized Gate TheresholdVoltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
Page 6
STW12NC60
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/8
Page 7
STW12NC60
TO-247 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
mm inch
7/8
P025P
Page 8
STW12NC60
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned inthis publication are
subject to change withoutnotice. Thispublication supersedes and replaces allinformation previously supplied. STMicroelectronics products
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