Page 1
N - CHANNEL 60V - 0.013Ω - 60A PowerSO-10
TYPE V
DSS
ST V60NE06-16 60 V < 0. 016 Ω 60 A
■ TYPICALR
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ LOW GATE CHARGE 100
■ APPLICATIONORIENTED
DS(on)
= 0.013 Ω
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
o
R
C
DS(on)
I
D
STV60NE06-16
STripFET POWER MOSFET
PRELIMINARY DATA
10
1
PowerSO-10
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGHCURRENT, HIGHSPEED SWITCHING
■ SOLENOIDAND RELAY DRIVERS
■ MOTORCONTROL, AUDIO AMPLIFIERS
■ DC-DC& DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc. )
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/ dt Peak Diode Re c ov er y v olt age slope 6 V/ns
T
(•) Pulse width limited by safeoperating area (1)ISD≤60 A, di/dt ≤ 300 A/µs, VDD≤ V
May 2000
Dra in- sour c e Voltage (VGS=0) 60 V
DS
Dra in- gate Volt age (RGS=20kΩ)60V
DGR
Gat e-source V oltage ± 20 V
GS
I
Dra in Current (c ont inuous) a t Tc=25oC60A
D
I
Dra in Current (c ont inuous) a t Tc=100oC42A
D
(•) Dra in Current (p ulsed) 240 A
Tot al Dissipat ion at Tc=25oC 150 W
tot
Derating Factor 1 W/
St orage Tempe r ature -65 t o 175
stg
T
Max. O perating Junction Temperat ur e 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
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STV60NE06-16
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Te mperature For Solder ing Purp os e
l
Avalanche Current, R epetitive or Not-Repetitive
(pulse width limited by T
Single P ul s e Avalanc he Energy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max,δ <1%)
j
1
62.5
0.5
300
60 A
350 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
- 40 to 150oC unless otherwise specified)
(T
J=
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 60 V
Break dow n Volt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Cur rent (V
GS
Gat e- bod y L eakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250 µA 234V
Sta t ic Drain -s ource On
VGS=10V ID= 40 A 0.013 0.016
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
60 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capac i t ance
iss
Out put Capacitanc e
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=30 A 20 35 S
VDS=25V f=1MHz VGS= 0 4600
580
140
µ
µA
Ω
pF
pF
pF
A
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STV60NE06-16
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Ti me
VDD=30V ID=30A
R
G
=4.7
Ω
VGS=10V
40
12560180
(see test circuit, figure 3)
Q
Q
Q
Tot al Gat e Charge
g
Gat e- Source Charg e
gs
Gate-Drain Charge
gd
VDD=48V ID=60A VGS= 10 V 115
25
40
160 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Ris e T im e
Fall T ime
f
Cross-over T ime
c
VDD=48V ID=60A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
15
150
180
25
210
260
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration= 300µs, duty cycle 1.5%
(•) Pulse width limited by safe operatingarea
Source-drain Current
(•)
Source-drain Current
60
320
(pulsed)
(∗)ForwardOnVoltage ISD=60A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 60 A di/dt = 100 A/µs
=30V Tj= 150oC
V
DD
(see test circuit, figure 5)
100
0.4
Charge
Reverse Recovery
8
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
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Page 4
STV60NE06-16
Fig. 1:
UnclampedInductiveLoad TestCircuit
Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 2:
UnclampedInductive Waveform
Fig. 4: Gate Chargetest Circuit
Fig. 5:
Test CircuitFor InductiveLoad Switching
And Diode Recovery Times
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Page 5
PowerSO-10 MECHANICAL DATA
STV60NE06-16
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 3.35 3.65 0.132 0.144
A1 0.00 0.10 0.000 0.004
B 0.40 0.60 0.016 0.024
c 0.35 0.55 0.013 0.022
D 9.40 9.60 0.370 0.378
D1 7.40 7.60 0.291 0.300
E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 0.300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240
e 1.27 0.050
F 1.25 1.35 0.049 0.053
H 13.80 14.40 0.543 0.567
h 0.50 0.002
L 1.20 1.80 0.047 0.071
q 1.70 0.067
α 0
o
o
8
==
==
HE
h
A
F
A1
610
51
eB
M
0.25
D
==
D1
==
DETAIL”A”
E2
==
DETAIL”A”
Q
B
0.10 A
E1E3
==
SEATING
PLANE
A
C
α
B
E4
==
SEATING
PLANE
A1
L
==
0068039-C
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STV60NE06-16
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implicationor otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components inlife support devices or systems without express written approval of STMicroelectronics.
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