Datasheet STV5742 Datasheet (SGS Thomson Microelectronics)

2-HEAD PLAYBACKAND RECORD AMPLIFIERFOR VCR

.

ONE 5V POWERSUPPLY

.

PLAYBACK/RECORD MODE SELECTION
THROUGHA LOGICINPUT

.

SO16PACKAGE

.

NO ADJUSTMENT FOR LUMINANCE RE­CORDING

PLAYBACK MODE

.

LOW NOISE AND WIDE BAND AMPLIFIERS
FOR2 HEADS

.

AUTOMATIC OFFSET CANCELLATION
BETWEENTHE 2 SELECTEDHEADS

.

ONE PLAYBACKOUTPUT

.

ONE OUTPUT FOR AUTOMATIC VIDEO
TRACKING

RECORDMODE

.

RECORD AGC AMPLIFIER SAMPLED BY
SYNCHROSIGNAL

.

RECORDING SIGNAL LEVEL ADJUSTABLE
BYEXTERNALRESISTOR

SO16 Narrow

(Plastic Package)

ORDER CODE :

STV5742

STV5742

PIN CONNECTIONS

February 1997

I

OUT

V1

V2
C1
H2

GND1

H1
C2

1
2
3
4
5
6
7
8

16
15
14
13
12
11
10

CAGCREC
RECIN
TRIV
CSYN
GND2
PBOUT
V

CC

9

SWIN

5742-01.EPS

1/7

STV5742

BLOCKDIAGRAM

CAGCREC

RECIN

14

TRIV

CSYN

GND2

PBOUT

CC

V

SWIN

9101112131516

S
T
V
5
7
4

V

CC

12345678

I

OUT

V1

V2

C1

H2

H1

GND1

2

C2

ABSOLUTE MAXIMUMRATINGS

Symbol Parameter Value Unit

V

CC

T

T

oper

Power Supply Voltage 6 V
Junction Temperature 150

j

Operating Temperature 0, +70

5742-02.EPS

o

C

o

C

5742-01.TBL

THERMAL DATA

Symbol Parameter Value Unit

R

th (j-a)

Junction-ambient Thermal Resistance Max. 100

RECOMMENDEDOPERATING CHARACTERISTICS

Symbol Parameter Min. Typ. Max. Unit

V

CC

CAGC Capacitance on PinCAGCREC 4.7 nF

RECADJ Record Biasing Resistor 10 33 kΩ

2/7

Power Supply 4.75 5 5.25 V

o

C/W

5742-02.TBL

5742-03.TB L

STV5742

ELECTRICAL CHARACTERISTICS

PlaybackMode

= 5V,no loadon PinPBOUT, Recadj = 12kΩ)

(V

CC

=25oC, unless otherwise specified)

(T

amb

Symbol Parameter Test Conditions Min. Typ. Max. Unit

PLAYBACK AMPLIFIER

I

CC1

GPB Playback Gain Sinewave 600kHz,0.4mV

EN Equivalent Voltage Noise

Supply Current 19 29 39 mA

on inputs 58 60 62 dB

PP

Input grounded via I
BW = 10kHz

Pin @ 600kHz,

OUT

0.45 0.6

IN EquivalentInput CurrentNoise Input open @ 6MHz, BW = 10kHz 2.5

CRT1 Crosstalk Sinewave @ 4MHz, 0.4mV

PP

-35 -30 dB

RPBSW Playback Switch onResistor @ 6MHz 1 5 10 Ω

BWLCF Attenuation @ 100KHz Reference level @ 600kHz -3 0 1 dB

BWHCF Attenuation @ 8MHz Reference level @ 4MHz -3 -1 0 dB

C

Z

Input Capacitance @ 6MHz, 22nF between Vi/Hi 40 50 60 pF

IN

Input Impedance @ 6MHz 300 450 600 Ω

IN

ZCPB Output Resistance DC 5 24 50 Ω

VDCPB1 DC Levelon PinPBOUT 1.6 2 2.4 V

DVDC Head Switch Offset -0.1 0 0.1 V

SHPB1 2nd Harmonic Sinewave @4MHz, 0.4mV

PP

-45 -40 dB

TRIV FUNCTION

TRIV0 Output Level (1) No input signal 0 0.3 1 V
TRIV1 Output Level (2) Sinewave @4MHz, 100mV
TRIV4 Output Level (3) Sinewave @4MHz, 400mV
TRIV6 Output Level (4) Sinewave @4MHz, 600mV

@ PBOUT 1.3 V

PP

@ PBOUT 2.5 3.1 3.5 V

PP

@ PBOUT 3.2 3.7 4.2 V

PP

TRIV1-TRIV0 0.5 1 - V

nV

√Hz

pA

√Hz

RecordMode (VCC=5V, Recadj= 12kΩ, SWR = 5V,CAGCREC = 470pF,RRCY =2.2kΩ,
RRCC = 8.2kΩ, Load10µH//1kΩ for each simulated head)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

RECORD AMPLIFIER

I

CC2

IHA0 DC Currentthrough I
IHA1 Fundamental VRCY = 300mV
IHA2 2nd Harmonic VRCY = 300mVPP@ 4MHz -40 -36 dB

IHA2M 2nd Harmonic

BWRECL Attenuationat 100kHz Reference level @ 600kHz, AGC locked -3 0 1 dB

BWRECH Attenuation at 8MHz Reference level @ 4MHz, AGC locked -2 -0.5 1 dB

DVLREC Record AGC Sensitivity V

RIOUT Output Resistance ∆V = 5V 3.5 5.5 - κΩ

RSAT Output Stage Resistance ∆I = 10mA 5 10 50 Ω

IRN
IRP

SWITCHING LEVELS

VSWINH SWIN Input Threshold Selects head H1, 0 to 5V 1.5 2 2.5 V

VSWINL SWIN Input Threshold Selects headH2, 5 to 0V 1.5 2 2.5 V

ISWINH SWIN Input Leakage Current 5V at SWIN input 5 18 50 µA

ISWINL SWIN Input Leakage Current 0V at SWIN input -50 -25 -5 µA

VSWRCH SWRC Input Threshold Selects recordmode, 0 to 5V 3.2 3.4 3.8 V

Current Supply 55 85 115 mA

OUT

AGC Capacitor downloading
Current

AGC Capacitor uploading
Current

@ 4MHz 34 36 38 mA

PP

VRCY = 400mV
AGC adjusted for IAH1 = 40mA

= 300mVPP±3dB @ f = 4MHz -0.2 0 +0.2 dB

IN

@ 4MHz,

PP

PP

4.5V at CAGC Pin 165 µA

0.5V at CAGC Pin,
= 300mVPP@ 4MHz

V

IN

28 38 47.5 mA

-34 -32 dB

-165 µA

PP

5742-04.TBL

3/7

STV5742

ELECTRICALCHARACTERISTICS (T

Record Mode

= 5V, Recadj= 12kΩ, SWR = 5V,CAGCREC = 470pF,RRCY = 2.2kΩ,

(V

CC

=25oC, unless otherwisespecified)

amb

RRCC = 8.2kΩ, Load 10µH//1kΩfor each simulatedhead) (continued)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

SWITCHING LEVELS (continued)

VSWRCL SWRC InputThreshold Selects playback mode, 5 to 0V 3.1 3.3 3.8 V

ISWRCH SWRC InputLeakage Current 5V at SWRC input 2 5 8 mA
ISWRCL SWRC Input Leakage Current 0V at SWRC input -20 0 20 µA

t

ON

t1
t2
t3
t4

Delay Signal appears on PBOUT 3 ms
Delay from playback to record :

Signal disappears on Pin PBOUT
Delay from record to playback :

Signal appears on Pin PBOUT
Delay from playback to record :

Signal appears on Pin I

OUT

Delay from record to playback :
Signal disappears on Pin I

OUT

22nF between Hi/Vi 1 µs
22nF between Hi/Vi 5 ms

25 µs

7 µs

VCSYH CSYN Input Threshold Sampling on (I = -25µA) 2.2 2.5 2.8 V
VCSYL CSYN Input Threshold Sampling off (I = 25µA) 2.2 2.5 2.8 V

ICSYH Leakage Current Sampling on -10 µA

ICSYL Leakage Current Sampling off 10 µA

INTERNAL SCHEMATICS
Figure1

Figure 2

5742-05.TBL

Figure3

OUT

1I

7Ω 50kΩ

V

CC

3V2

V

CC

2V1

5742-04.EPS

2.7kΩ

V

CC

5742-05.EPS

Figure 4

V

CC

V

CC

C1/C2

Pins 4/8

1kΩ

4/7

5742-06.EPS

5742-07.EPS

INTERNAL SCHEMATICS (continued)
Figure5

STV5742

Figure 6

Figure7

SWIN

H2

V

CC

Ω

36k

5

150k

Ω

H1

5742-08.EPS

V

CC

36kΩ 150kΩ

7

5742-09.EPS

Figure 8

V

CC

V

CC

9

V

CC

PBOUT

11

49kΩ

V

CC

63Ω

Figure9

CSYN

13

5742-10.EPS

5742-11.EPS

Figure 10

V

CC

500Ω

V

CC

TRIV

14

V

CC

V

CC

200Ω

5742-12.EPS

5742-13.EPS

5/7

STV5742

INTERNAL SCHEMATICS (continued)
Figure11

V

CC

Figure 12

V

CC

V

V

CC

CC

RECIN

15

APPLICATION DIAGRAM

CRCC

22nF

RRCC

8.2k

Ω

CAGC

22nF

CAGCREC

CRCY
22nF

RRCY

2.2k

RECIN

100k

CAGCREC

5742-14.EPS

Ω

16

2kΩ

D1 1N4148

2kΩ

5742-15.EPS

RECC
RECY

SW REC
SW H
CSYN
PBOUT

L1 22µH

V

Ω

TRIV

14

CSYN

GND2

PBOUT

CC

V

SWIN

9101112131516

C1
22nF

C2
22µF

RADJ
12kΩ

CC

TRIV

S
T
V
5
7
4

V

CC

2

6/7

R1 1k

C3
22nF

Ω

12345678

OUT

I

H1H2

V1

V2

CDC1

22nF

C1

H2

CH1
22nF

GND1

H1

CH2
22nF

C2

CDC2
22nF

5742-03.EPS

PACKAGE MECHANICAL DATA

16 PINS - PLASTICMICROPACKAGE(SO)

Dimensions

Min. Typ. Max. Min. Typ. Max.

A 1.75 0.069
a1 0.1 0.25 0.004 0.009
a2 1.6 0.063

b 0.35 0.46 0.014 0.018
b1 0.19 0.25 0.007 0.010

C 0.5 0.020
c1 45

D 9.8 10 0.386 0.394

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 8.89 0.350

F 3.8 4.0 0.150 0.157

L 0.4 1.27 0.016 0.050

M 0.62 0.024

S8

Millimeters Inches

o

(typ.)

o

(Max.)

STV5742

PM-SO16N.EPS

SO16N.TBL

Informationfurnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of suchinformation nor for any infringementof patentsor other rightsof third parties whichmay result
fromits use.No licenceisgranted by implicationor otherwiseunder anypatent orpatent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
informationpreviously supplied. SGS-THOMSON Microelectronics productsare notauthorized for use as critical components in life
support devices or systems without expresswritten approval of SGS-THOMSON Microelectronics.

1997 SGS-THOMSONMicroelectronics - All Rights Reserved



Purchase of I2C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips

2

C Patent. Rights to usethese components in a I2C system, is granted provided that the system conforms to

I

Australia- Brazil - Canada - China - France - Germany- Hong Kong - Italy- Japan - Korea - Malaysia - Malta - Morocco

The Netherlands - Singapore- Spain - Sweden - Switzerland- Taiwan - Thailand - United Kingdom - U.S.A.

2

the I

C Standard Specifications as defined by Philips.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

7/7