Page 1
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
DSS
STU14NA50 500 V < 0.36 Ω 14 A
R
DS(on)
I
D
STU14NA50
PRELIMINARY DATA
■ TYPICAL R
■ EFFICIENT AND RELAIBLE MOUNTING
DS(on)
= 0.31 Ω
THROUGH CLIP
■ ± 30V GATE TO SOURCE VOLTA GE RATING
■ REPETITIVE AVA LANCHE TES TED
■ LOW INTRINSIC CAPACITANCE
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ REDUCED THRESHOLD VO LTA GE SPREA D
DESCRIPTION
The Max220
TM
package is a new high volume
power package exibiting the same footprint as the
industry standard TO-220, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages. The increased die
capacity makes the device ideal to reduce
component count in multiple paralleled TO-220
designs and save board space with respect to
larger packages.
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SWITC H MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVE RTERS FOR W ELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SU PP LIE S (UPS)
3
2
1
Max220
TM
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
IDM(•) Drain Current (pulsed) 56 A
P
T
(•) Pulse width limited by safe operating area
October 1997
Drain-source Voltage (VGS = 0) 500 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC14A
D
I
Drain Current (continuous) at Tc = 100 oC 8.8 A
D
Total Dissipation at Tc = 25 oC 160 W
tot
Derating Factor 1.28 W/oC
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
500 V
o
C
o
C
1/5
Page 2
STU14NA50
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-si n k
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
E
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
Repetitive Avalanche Energy
AR
= 25 oC, ID = IAR, V
j
(pulse width limited by T
ma x, δ < 1%)
j
DD
ma x, δ < 1%)
j
Avalanche Current, Repetitive or Not-Repetitive
= 100 oC, pulse width limited by Tj max, δ < 1%)
(T
c
= 50 V)
0.78
62.5
0.5
300
14 A
980 mJ
39 mJ
8.8 A
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
500 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating x 0.8 Tc = 100 oC
DS
V
= ± 30 V
GS
25
50
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
2.25 3 3.75 V
Voltage
R
DS(on)
I
D(on)
Static Drain-source On
Resistance
VGS = 10V ID = 7A
V
= 10V ID = 7A Tc = 100oC
GS
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
0.31 0.36
0.72
14 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 7 A 8.5 11 S
= 0 2750
GS
380
105
3600
500
140
µA
µA
Ω
Ω
pF
pF
pF
2/5
Page 3
STU14NA50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING O N
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
(di/dt)
Turn-on Time
Rise Time
t
r
Turn-on Current Slope V
on
V
= 250 V ID = 7 A
DD
RG = 4.7 Ω VGS = 10 V
= 400 V ID = 14 A
DD
= 47 Ω VGS = 10 V
R
G
36
53
48
70
160 A/µs
ns
ns
Q
Q
Q
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
= 400 V ID = 14 A V
DD
= 10 V 115
GS
16
53
150 nC
SWITCHING O F F
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Time
Fall Time
f
Cross-over Time
c
V
= 400 V ID = 14 A
DD
= 4.7 Ω VGS = 10 V
R
G
52
24
80
68
32
105
SOURCE DRAIN DIO DE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
14
56
(pulsed)
(∗) Forward On Voltage ISD = 14 A VGS = 0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 14 A di/dt = 100 A/µs
SD
V
= 100 V Tj = 150 oC
DD
650
12.3
Charge
Reverse Recovery
38
Current
nC
nC
ns
ns
ns
A
A
ns
µC
A
3/5
Page 4
STU14NA50
Max220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.2 2.4 0.087 0.094
A2 2.9 3.1 0.114 0.122
b 0.7 0.93 0.027 0.036
b1 1.25 1.4 0.049 0.055
b2 1.2 1.38 0.047 0.054
c 0.45 0.6 0.18 0.023
D 15.9 16.3 0.626 0.641
D1 9 9.35 0.354 0.368
D2 0.8 1.2 0.031 0.047
D3 2.8 3.2 0.110 0.126
e 2.44 2.64 0.096 0.104
E 10.05 10.35 0.396 0.407
L 13.2 13.6 0.520 0.535
L1 3 3.4 0.118 0.133
mm inch
D3 D1
D2
C
A
E
A2
A1
D
b1
b2
L1
L
b
e
P011R
4/5
Page 5
STU14NA50
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
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