Datasheet STTA6006TV2, STTA6006TV1, STTA3006PI, STTA3006P Datasheet (SGS Thomson Microelectronics)

STTA3006P/PI



TURBOSWITCH



ULTRA-FASTHIGH VOLTAGE DIODE

MAINPRODUCTCHARACTERISTICS

I

F(AV)

V

RRM

(typ) 35ns

t

rr

(max) 1.5V

V

F

30A/ 2 x 30A

600V

FEATURESAND BENEFITS

SPECIFICTO”FREEWH EELMOD E”OPERATIONS:
FREEWHEELORBOOSTERDIODE

ULTRA-FAST ANDSOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION
TRANSISTOR

HIGHFREQUENCY OPERATIONS
INSULATEDPACKAGE: ISOTOP& DOP3I

Electricalinsulation: 2500V

RMS

Capacitance< 12 pF (DOP3I)
Capacitance< 45 pF (ISOTOP)

STTA6006TV1/2

K2 A2

A1K1

STTA6006TV1

ISOTOP

A2A1K1

K2

STTA6006TV2

TM

DESCRIPTION

K

The TURBOSWITCH is a very high performance
series of ultra-fast high voltagepowerdiodes from
600Vto1200V.
TURBOSWITCH family, drastically cuts losses in
boththe diodeand the associatedswitching IGBT
or MOSFET in all ”freewheel mode” operations
and is particularly suitable and efficient in motor

A

K

K

controlfreewheelapplicationsandin boosterdiode
applicationsin power factorcontrol circuitries.
Packaged either in ISOTOP, DOP3I or SOD93

SOD93

STTA3006P

DOP3I

STTA3006PI

these 600V devices are particularly intended for
useon 240V domesticmains.

ABSOLUTE RATINGS

(limitingvalues, per diode)

Symbol Parameter Value Unit

V

RRM

V

RSM

I

F(RMS)

I

FRM

I

FSM

T

T

stg

TM :TURBOSWITCH is a trademark of STMicroelectronics

Repetitivepeak reversevoltage 600 V
Non repetitivepeak reverse voltage 600 V
RMSforwardcurrent 50 A
Repetitivepeak forward current tp=5µs F=5kHzsquare 300 A
Surgenon repetitiveforward current tp=10ms sinusoidal 230 A
Maximumoperating junctiontemperature 150 °C

j

Storagetemperaturerange -65to 150 °C

A

November 1999 - Ed: 4C

1/9

STTA6006TV1/2/ STTA3006P/PI

THERMAL AND POWER DATA

(Perdiode)

Symbol Parameter Testconditions Value Unit

R

th(j-c)

Junctiontocasethermal
resistance

ISOTOP Perdiode 1.4 °C/W

Total 0.75
DOP3I 1.8
SOD93 1.2

R

th(c)

P

1

Conductionpower dissipation
I

=30A δ =0.5

F(AV)

ISOTOP Coupling 0.1 °C/W
ISOTOP Tc= 74°C54W
DOP3I Tc= 52°C
SOD93 Tc= 85°C

P

max

Totalpowerdissipation
Pmax= P1 + P3 (P3= 10% P1)

ISOTOP Tc=66°C60W
DOP3I Tc=42°C
SOD93 Tc=78°C

STATICELECTRICALCHARACTERISTICS

Symbol Parameter Test conditions Min Typ Max Unit

V

F*

I

R**

V

to

Forwardvoltage drop IF=30A Tj= 25°C

Tj = 125°C 1.25

Reverseleakage current VR=0.8×

V

RRM

Thresholdvoltage Ip < 3.I

Tj=25°C
Tj = 125°C3

Tj = 125°C 1.15 V

AV

1.75

1.5

150

8

rd Dynamicresistance 11 mΩ

Test pulses : *tp = 380 µs, δ <2%

** tp = 5 ms, δ <2%

V
V

µA

mA

To evaluatethe maximumconductionlossesuse thefollowingequation :
P=V

toxIF(AV)

+rdxI

F2(RMS)

DYNAMICELECTRICALCHARACTERISTICS
TURN-OFF SWITCHING

Symbol Parameter Test conditions Min Typ Max Unit

t

rr

Reverserecovery
time

I

RM

Maximumreverse
recoverycurrent

S factor Softnessfactor Tj= 125°CV

2/9

Tj= 25°C

= 0.5 A IR= 1A Irr= 0.25A

I

F

I

=1A dIF/dt =-50A/µsVR=30V

F

35

65

Tj= 125°C VR =400V IF=30A

/dt= -240A/µs

dI

F

dI

/dt= -500A/µs20

F

= 400V IF=30A

R

/dt= -500A/µs 0.40

dI

F

19

ns

A

-

STTA6006TV1/2 / STTA3006P/PI

TURN-ON SWITCHING

Symbol Parameter Test conditions Min Typ Max Unit

t

fr

Forwardrecovery
time

V

Fp

Peakforward voltage Tj= 25°C

Tj= 25°C
I

=30A,dIF/dt= 240 A/µs

F

measuredat, 1.1

I

=30A,dIF/dt= 240 A/µs

F

× V

max

F

600

12

ns

V

Fig.1: Conductionlossesversusaveragecurrent.

P1(W)

60

50

40

30

20

10

0

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30

=tp/T

T

tp

=0.1

=1

=0.5

=0.2

IF(av)(A)

Fig. 3: Relative variation of thermal transient

impedancejunctionto case versuspulse duration.

Fig. 2: Forward voltage drop versus forward
current.

VFM(V)

3.50

3.00

MAXIMUM VALUES

2.50

2.00

o

Tj=125 C

1.50

1.00

0.50

0.00

0.1 1 10 100

IFM(A)

Fig. 4: Peak reverse recovery current versus

dI

/dt.

F

IRM(A)

45

90% CONFIDENCE Tj=125 C

40

VR=400V

35
30
25
20
15
10

5
0

0 100 200 300 400 500 600 700 800 9001000

o

IF= 60A

IF=30A

IF=15A

dIF/dt(A/ s)

3/9

STTA6006TV1/2/ STTA3006P/PI

Fig.5: Reverserecoverytime versusdIF/dt.

trr(ns)

250
225
200
175
150
125

90% CONFIDENCE Tj=125 C

IF=60A

IF= 30A

o

VR=400V

100

IF= 15A

75
50
25

0

0 100 200 300 400 500 600 700 800 9001000

dIF/dt(A/ s)

Fig. 7: Relative variation of dynamic parameters

versusjunctiontemperature(referenceTj=125°C).

3.25

3.00

2.75

2.50

2.25

2.00

1.75

1.50

1.25

1.00

IRM

0.75

0.50
0 255075100125150

S factor

Tj(oC)

Fig. 6: Softnessfactor(tb/ta)versusdIF/dt.

S factor

0.90

0.85

0.80

0.75

0.70

Typical values Tj=125 C

IF<2xIF(av)

o

VR=400V

0.65

0.60

0.55

0.50

0.45

0.40

0.35

0.30

0.25

0.20
0 100 200 300 400 500 600 700 800 9001000

dIF/dt(A/ s)

Fig. 8: Transient peak forward voltage versus

dI

/dt.

F

VFP(V)

16
15

90% CONFIDENCE Tj=125 C

14

IF=IF(av)

13
12
11
10

9
8
7
6
5
4
3
2
1
0

0 100 200 300 400 500 600

o

dIF/dt(A/ s)

Fig.9: Forwardrecovery time versusdIF/dt.

tfr(ns)

600
550
500
450
400
350
300
250
200
150
100

50

0

0 100 200 300 400 500 600

4/9

90% CONFIDENCE Tj=125 C

VFr=1.1*VF max.

IF=IF(av)

dIF/dt(A/ s)

o

APPLICATIONDATA

STTA6006TV1/2 / STTA3006P/PI

The TURBOSWITCH is especially designed to
provide the lowest overall power losses in any
”FREEWHEEL Mode” application (Fig.A)
considering both the diode and the companion

TOTALLOSSES

due to the diode

P = P1+ P2+ P3+ P4+ P5 Watts

CONDUCTION

LOSSES

in the diode

REVERSE

LOSSES

in the diode

transistor,thus optimizing the overall performance
in the end application.
The way of calculating the power losses is given
below:

SWITCHING

LOSSES

in the diode

SWITCHING

LOSSES

in the tansistor

due to thediode

Fig.A : ”FREEWHEEL”MODE.

SWITCHING

TRANSISTOR

V

R

F=1/T =t/T

IL

DIODE:

TURBOSWITCH

t

T

LOAD

5/9

STTA6006TV1/2/ STTA3006P/PI

APPLICATIONDATA (Cont’d)

Fig.B: STATICCHARACTERISTICS

I

I

F

Rd

V

R

V

tOVF

I

R

Conduction

P1= V

V

Reverse

P2= V

losses:

t0.IF(AV)+Rd.IF2(RMS)

losses:

.(1-δ)

R.IR

Fig.C:

TURN-OFFCHARACTERISTICS

V

IL

TRANSISTOR

I

I

dI /dt

F

V

I

RM

trr = ta + tb S = tb / ta

tbta

dI /dt

R

DIODE

t

Fig.D: TURN-ONCHARACTERISTICS

I

F

I

dI /dt

F

Fmax

VR

Turn-onlosses:

(inthe transistor,due to thediode)

2

×

I

× ( 3 + 2 ×S) ×

RM

6

xdI

I

×

I

RM

L

2

x

dI

⁄

dt

F

× (S+ 2 ) ×

⁄

dt

F

F

F

P5 =

+

V

R

V

×

R

Turn-offlosses(in the diode):

t

P3 =

V

R

2

×

I

×

xdI

⁄

F

S×F

dt

RM

6

P3 and P5 are suitable for power MOSFET and
IGBT

6/9

0

V

F

V

Fp

1.1V

F

0t

tfr

t

Turn-on

P4= 0.4(V

V

F

losses:

FP-VF

).I

Fmax.tfr

.F

PACKAGEMECHANICAL DATA

ISOTOP

STTA6006TV1/2 / STTA3006P/PI

DIMENSIONS

REF.

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

B 7.8 8.20 0.307 0.323

C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80 0.976

G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169

F 4.10 4.30 0.161 0.169

F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69

P1 4.00 4.40 0.157 0.173

S 30.10 30.30 1.185 1.193

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

Coolingmethod : byconduction(C)

7/9

STTA6006TV1/2/ STTA3006P/PI

PACKAGEMECHANICALDATA

SOD93

DIMENSIONS

REF.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 4.70 4.90 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.50 0.098

D1 1.27 0.050

E 0.50 0.78 0.020 0.031

F 1.10 1.30 0.043 0.051

F3 1.75 0.069

G 10.80 11.10 0.425 0.437
H 14.70 15.20 0.578 0.598

L 12.20 0.480

L2 16.20 0.638
L3 18.0 0.709
L5 3.95 4.15 0.156 0.163
L6 31.00 1.220

O 4.00 4.10 0.157 0.161

Coolingmethod : byconduction(C)
Recommendedtorquevalue: 0.8 m.N
Maximumtorque value : 1m.N

8/9

PACKAGEMECHANICALDATA

DOP3I

STTA6006TV1/2 / STTA3006P/PI

DIMENSIONS

REF.

A 4.4 4.6 0.173 0.181
B 1.45 1.55 0.057 0.061
C 14.35 15.60 0.565 0.614
D 0.5 0.7 0.020 0.028
E 2.7 2.9 0.106 0.114

F 15.8 16.5 0.622 0.650
G 20.4 21.1 0.815 0.831
H 15.1 15.5 0.594 0.610
K 3.4 3.65 0.134 0.144

L 4.08 4.17 0.161 0.164
N 10.8 11.3 0.425 0.444
P 1.20 1.40 0.047 0.055
R 4.60 typ. 0.181 typ.

Millimeters Inches

Min. Max. Min. Max.

Coolingmethod : byconduction(C)
Recommendedtorquevalue: 0.8 m.N
Maximumtorque value : 1m.N

Orderingtype Marking Package Weight Base qty Deliverymode

STTA6006P STTA6006P SOD93 3.79g 30 Tube

STTA6006PI STTA6006PI DOP3I 4.52g 30 Tube
STTA6006TV1 STTA6006TV1 ISOTOP 27g
STTA6006TV2 STTA006TV2 ISOTOP 10 Tube

withoutscrews

10 Tube

Epoxymeets UL94,V0

Informationfurnished is believedto be accurate and reliable. However,STMicroelectronics assumes no responsibilityfor the consequencesof
use of such information nor for any infringementof patents orother rights of thirdparties whichmay resultfromits use. No licenseis granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap­proval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

 1999 STMicroelectronics- Printed in Italy - All rights reserved.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy- Japan - Malaysia

Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

http://www.st.com

9/9