Datasheet STPR320 Datasheet (SGS Thomson Microelectronics)



ULTRA-FASTRECOVERY RECTIFIER DIODES

MAINPRODUCTCHARACTERISTICS

STPR320

I

F(AV)

V

RRM

3A

200 V

Tj (max) 150°C

(max) 0.99 V

V

F

trr (max) 30 ns

FEATURES

SUITEDFORSMPS
LOWLOSSES
LOW FORWARD AND REVERSERECOVERY

TIME
HIGHSURGECURRENT CAPABILITY

DESCRIPTION

Low cost single chip rectifier suited for Switched
Mode Power Supplies and high frequency DC to
DCconverters.

Packagedin F126, this device is intended for use
in low voltage, high frequency inverters, free
wheelingandpolarityprotectionapplications.

F126

(JEDECDO-204AC)

ABSOLUTE MAXIMUM (limitingvalues)

Symbol Parameter Value Unit

V

RRM

I

F(AV)

Repetitivepeak reverse voltage 200 V
Averageforwardcurrent Tl=60°C

3A

δ = 0.5

I

FSM

Surge non repetitiveforwardcurrent tp=10ms

30 A

sinusoidal

T

stg

Storagetemperaturerange - 65 to + 150 °C

Tj Maximumoperating junctiontemperature 150 °C

October 1999-Ed:1A

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STPR320

THERMAL RESISTANCE

Symbol Parameter Value Unit

R

th(j-l)

Junctionlead(L=5mm) 25 °C/W

STATICELECTRICAL CHARACTERISTICS

Symbol Parameters Test conditions Min. Typ. Max. Unit

I

*

R

Reverseleakage
current

V

F**

Forwardvoltage
drop

Pulse test : * tp= 5ms, δ <2%

** tp = 380 µs, δ <2%

T

=25°CV

j

T

= 100°C

j

R=VRRM

0.2 0.5 mA

10 µA

Tj= 125°CIF=3 A 0.8 0.99 V

= 125°CIF=6 A 0.95 1.20

T

j

=25°CI

T

j

=6 A 1.25

F

Toevaluate the conductionlossesuse the following equation:
P= 0.78x I

F(AV)

+ 0.070 x I

F2(RMS)

RECOVERYCHARACTERISTICS

Symbol Test conditions Min. Typ. Max. Unit

trr T

tfr T

V

FP

Tj=25°CI

=25°CI

j

=25°CI

j

=0.5A

F

I

=1A

R

=3A

F

= 1.1x VFmax

V

FR

=3A dIF/dt = 50 A/µs3 V

F

Irr= 0.25A 30 ns

dI

/dt = 50 A/µs20ns

F

Fig. 1 :

Averageforward power dissipation versus

averageforwardcurrent.

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Fig. 2 :

Peakcurrentversus form factor.

Fig. 3:

Average current versus ambient
temperature(δ : 0.5)
* circuit board e (Cu) = 35µm, S (cu) = 12mm
L

(LEADS )

= 20mm

Fig. 4:

versusoverloadduration(maximum values).

2

Non repetitive surge peak forward current

STPR320

IF(av)(A)

3.5

3.0
Rth(j-a)=Rth(j-l)

2.5

2.0

1.5

1.0
Rth(j-a)=90 C/w *

0.5

0.0

0 25 50 75 100 125 150

Fig. 5:

Relative variation of thermal transient

o

=0.5

=tp/T

T

tp

impedancejunctionto caseversuspulse duration.

K=Zth(j-l)/Rth(j-l)

1

=0.5

=0.2

=0.1

0.1

IM(A)

20
18
16
14
12
10

8
6
4
2
0

0.001 0.01 0.1 1 10

Fig. 6:

Forward voltage drop versus forward

IM

=0.5

Tl=25 C

Tl=60 C

t(s)

current(maximum values).

o

o

T

SINGLE PULSE

0.01

tp(s)

=tp/T

0.001 0.01 0.1 1 10

Fig 7:

Junction capacitance versus reverse

voltageapplied(typicalvalues).

tp

Fig. 8:

H

RecoverychargesversusdI

F

/dt.

3/5

STPR320

Fig. 9: Peak reversecurrentversus dIF/dt.

Fig. 10: Dynamic parameters versus junction

temperature.

4/5

PACKAGEMECHANICAL DATA

F126

STPR320

D

DIMENSIONS

REF.

A 6.05 6.20 6.35 0.238 0.244 0.250
B 2.95 3.00 3.05 0.116 0.118 0.120
C 26 31 1.024 1.220
D 0.76 0.81 0.86 0.030 0.032 0.034

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A

CC

D

B

Orderingtype Marking Package Weight Base qty

Delivery

mode

STPR320 STPR320 F126 0.4g 1000 Ammopack

Coolingmethod: by conduction(C)
EpoxymeetsUL94,V0

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