Page 1
STPR2420CT
ULTRA-FASTRECOVERY RECTIFIER DIODES
MAINPRODUCTSCHARACTERISTICS
I
F(AV)
V
RRM
2 x 12 A
200 V
Tj (max) 150°C
(max) 0.99 V
V
F
trr (max) 30 ns
FEATURES
SUITEDFORSMPS
LOWLOSSES
LOW FORWARD AND REVERSERECOVERY
TIME
HIGHSURGE CURRENT CAPABILITY
HIGHAVALANCHEENERGYCAPABILITY
Low cost dual center tap rectifier suitedforSwitch
ModePower Supply andhigh frequencyDC to DC
converters.
Packagedin TO-220AB,this deviceisintended for
use in low voltage, high frequency inverters, free
wheelingand polarityprotectionapplications.
A1
A2
TO-220AB
A1
K
A2
K
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Repetitivepeakreverse voltage
RMSforward current
Averageforwardcurrent
δ = 0.5
Tc= 115°C Per diode
Per device
Surgenon repetitiveforwardcurrent Tp = 10 ms
200 V
30 A
12 A
24
120 A
Sinusoidal
T
stg
Tj
July 1999- Ed:2B
Storagetemperaturerange
Maximumoperating junctiontemperature
- 65 to +150 °C
+ 150
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STPR2420CT
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th(j-c)
th(c)
Junctionto case Perdiode
Total
Coupling
2.5
1.4
0.23
Whenthe diodes1 and 2 areused simultaneously:
∆
Tj(diode1) = P(diode1) x Rth(j-c)(Per diode)+ P(diode2) x Rth(c)
STATICELECTRICALCHARACTERISTICS
Symbol Parameters Testconditions Min. Typ. Max. Unit
*
I
R
**
V
F
Pulse test : * tp= 5 ms, δ <2%
Reverseleakage current Tj= 25°CV
Forwardvoltage drop Tj= 125°CI
** tp= 380 µs, δ <2%
Tj= 100°C
Tj= 125°CI
Tj= 25°CI
R=VRRM
=12A
F
=24A
F
=24A
F
50 µA
0.8 mA
0.99 V
1.20
1.25
Toevaluate theconductionlossesuse the following equation:
P= 0.78x I
F(AV)
+ 0.0175x I
F2(RMS)
RECOVERYCHARACTERISTICS
°C/W
Symbol Testconditions Min. Typ. Max. Unit
trr T
tfr T
V
FP
=25°CI
j
=25°CI
j
Tj=25°CI
= 0.5A Irr= 0.25A IR=1A
F
= 1A tr=10 ns VFR= 1.1x V
F
= 1A tr=10 ns
F
30 ns
F
20
3V
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STPR2420CT
Fig. 1:
Average forward power dissipation versus
averageforwardcurrent(per diode).
Fig. 3: Average current versus ambient
temperature.
Fig.2:
Peakcurrentversus formfactor(perdiode).
Fig. 4: Non repetitive surge peak forward current
versusoverloadduration (maximumvalues).
Fig. 5:
Relative variation of thermal transient
impedancejunction to case versuspulse duration.
Fig. 6:
current.
Forward voltage drop versus forward
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STPR2420CT
Fig. 7:
Junction capacitance versus reverse
voltageapplied (typicalvalues,per diode).
Fig. 9: Peak reverse current versus dIF/dt (per
diode).
Fig. 8:
Recoverycharge versusdI
/dt(per diode).
F
Fig. 10: Dynamic parameters versus junction
temperature(per diode).
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Page 5
PACKAGE MECHANICAL DATA
TO-220AB
H2
Dia
L5
L6
L2
F2
F1
F
G1
G
L9
L4
STPR2420CT
DIMENSIONS
REF.
A 4.40 4.60 0.173 0.181
A
C
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
L7
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
D
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4typ. 0.645typ.
M
E
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6typ. 0.102typ.
Diam. 3.75 3.85 0.147 0.151
Millimeters Inches
Min. Max. Min. Max.
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use of such informationnor forany infringementof patentsor otherrights of thirdparties which mayresult fromits use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
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