Datasheet STPR2010CT, STPR2020CT Datasheet (LITEON)

LITE-ON
SEMICONDUCTOR

STPR2010CT thru 2020CT

SUPER FAST

GLASS PASSIVATED RECTIFIERS

FEATURES

Glass passivated chip
Superfast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
High surge capacity
Plastic package has UL flammability classification

94V-0

MECHANICAL DATA

Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any

REVERSE VOLTAGE
FORWARD CURRENT

TO-220AB

C

K

I

PIN 1
PIN 3

132

H

B

PIN

H

L

M

D

A

E

F

G

J

N

PIN 2

CASE

- 100 to 200

- 20

Amperes

TO-220AB

DIM.

14.22 15.88

A
B
C
D
E
F

12.70

G
H

2.29
I
J

K
L
M
N

All Dimensions in millimeter

Volts

MIN.

2.54 3.43

8.26

-

0.51

3.53 4.09

3.56 4.83

1.14 1.40

2.03

MAX.

10.67 9.65

6.86 5.84

9.28

6.35

14.73

2.79

1.14

0.64 0.30

2.92

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward

Rectified Current
Peak Forward Surge Current

8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)

Maximum forward Voltage at
Pulse width =300us
2% Duty cycle

Maximum DC Reverse Cu rrent
at Rated DC Blocking Voltage

Typical Junction Capacitance
per element (Note 1)

Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)

Operating and Storage Temperature Range

@T

95 C

C

=

F

=10A@TJ =25

I
IF=10A@TJ =125
IF=20A@TJ =25
IF=20A@TJ =125

@TJ =25

@TJ =100

℃

℃

℃

℃

℃

℃

SYMBOL

RRM

V

RMS

V

DC

V

(AV)

I

FSM

I

F

V

R

I

J

C

RR

T

R

0JC

STG

J

,T

T

STPR2010CT

100

70

100

20

125

1.1

1.0

1.25

1.20
5

100

100

35

1.5

-55 to +150

STPR2020CT

200
140
200

UNIT

V
V
V

A

A

V

uA

pF

ns

C/W

C

NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

F

2.Reverse Recovery Test Conditions:I

3.Thermal Resistance Junction to Case.

=0.5A,IR=1.0A,IRR0.25A.

REV. 4, 13-Sep-2001, KTGC09

RATING AND CHARACTERISTIC CURVES
STPR2010CT thru STPR2020CT

FIG.1 - FORWARD CURRENT DERATING CURVE

20

15

10

5

RESISTI VE OR I NDUCTI V E LOAD

AVERAGE FORWARD CURRENT

AMPERES

0

0

25

50

75 100 125 150

CASE TEMPERATURE , C

FIG.3 - TYPICAL REVERSE CHARACTERISTICS

1000

100

10

REVERSE CURRENT ,(uA)

1.0

TJ= 125 C

TJ= 100 C

175

FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT

150

125

100

75

50

25

Single Half-Sine-Wave
(JEDEC METHOD)

0

PEAK FORWARD SURGE CURRENT,

AMPERES

1 5 10 50 1002

20

NUMBE R OF CY CLES AT 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

100

100

TJ= 125 C

10

10

TJ= 25 C

1.0

1.0

0.1

INSTANTANEOUS

.01

20

0

PERCENT OF RA TED PEAK REVERSE VOLTAGE, (%)

TJ= 25 C

60 100

120

INSTANTANEOUS FORWARD CURRENT ,(A)

INSTANTANEOUS FORWARD CURRENT ,(A)

0.1

0.1

0.2 0.4

0

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

0.6 0.8 1.0

PULSE WIDTH 300ua

PULSE WIDTH 300us
2% Duty cycle

1.4

1.2

1.6

1.8

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1000

100

CAPACITANCE , (pF)

TJ= 25 C, f= 1MHz

10

0.1

1

10

4

REVERS E VOLTAGE , VO LTS

100

REV. 5, 13-Sep-2001, KTGC09