Datasheet STPR120A Datasheet (SGS Thomson Microelectronics)

®

HIGH EFFICIENCY FAST RECOVERY DIODE

MAIN PRODUCT CHARACTERISTICS

STPR120A

I

F(AV)

V

RRM

t

(max) 35 ns

rr

1A

200 V

FEATURES AND BENEFITS

VERY LOW SWITCHING LOSSES

n

LOW FORWARD VOLTAGE DROP

n

SURFACE MOUNT DEVICE

n

FAST RECTIFIER EPITAXIAL DIODE

n

DESCRIPTION

Single chip rectifier suited to Switched Mode
Power Supplies and high frequency DC/DC con­verters.

Packaged in SMA, this surface mount device is in­tended for use in low voltage, high frequency in­verters, free wheeling and polarity protection
applications.

ABSOLUTE RATINGS (limiting values)

SMA

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitive peak reverse voltage 200 V
RMS forward current 8 A
Average forward current T

Lead

= 125°C

1A

δ = 0.5

I

FSM

Surge non repetitive forward current tp = 10 ms

30 A

Sinusoidal

T

stg

Storage temperature range - 65 to + 150 °C

Tj Maximum junction temperature 150 °C

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-l)

April 2000 - Ed: 3

Junction to lead 30 °C/W

1/5

STPR120A

STATIC ELECTRICAL CHARACTERISTICS

Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit

I

* Reverse leakage current Tj = 25°C VR=V

R

RRM

Tj = 125°C 180 400

V

** Forward voltage drop Tj = 25°C IF= 1 A 0.94 V

F

3 µA

Tj = 150°C I

Pulse test : * tp = 5ms, δ <2%

** tp = 380 µs, δ <2%

= 1 A 0.69 0.74

F

RECOVERY CHARACTERISTICS

Symbol Tests Conditions Min. Typ. Max. Unit

trr Tj = 25°C I

= 0.50 A Irr= 0.25 A

F

25 ns

IR=1A
I

=1A dIF/dt=50A/µs

F

VR=V

RRM

t

FR

Tj = 25°C IF=1A dIF/dt = 100 A/µs

25 35

25

Measured at 1 V

V

FP

Tj = 25°C IF=1A dIF/dt = 100 A/µs5V

To evaluate the maximum conduction losses use the following equation :
P=0.62xI

F(AV)

+0.12xI

F2(RMS)

2/5

STPR120A

Fig. 1: Average forward power dissipation versus

average forward current.

PF(av)(W)

1.0

0.9

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

0.8

0.7

δ = 1

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

IF(av) (A)

Fig. 3: Average forward current versus ambient

temperature (δ=0.5).

IF(av)(A)

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0
0 25 50 75 100 125 150

Rth(j-a)=Rth(j-l)

Rth(j-a)=120°C/W

Tamb(°C)

Fig. 2: Peak current versus form factor.

IM(A)

10

9
8
7
6
5
4
3
2
1
0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

P=1.5W

P=1.0W

P=0.5W

P=0.25W

δ

Fig. 4: Non repetitive surge peak forward current
versus overload duration.

IM(A)

6
5
4
3
2
1
0

1E-3 1E-2 1E-1 1E+0

t(s)

Ta=25°C

Ta=100°C

Ta=125°C

Fig. 5: Variation of thermal impedance junction to
ambient versus pulse duration (Recommended
pad layout, epoxy FR4, e(Cu)=35µm).

Zth(j-a)(°C/W)

200
100

10

Single pulse

tp(s)

1
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Fig. 6: Forward voltage drop versus forward cur­rent (maximum values).

IFM(A)

50.00

10.00

1.00

0.10

0.01

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Tj=150°C

Tj=25°C

VFM(V)

3/5

STPR120A

Fig. 7: Junction capacitance versus reverse

voltage applied (typical values).

C(pF)

20

F=1MHz
Tj=25°C

10

5

2

VR(V)

1

1 10 100 200

Fig. 9: Peak reverse recovery current versus dIF/dt.

IRM(A)

20.0

10.0

IF=2A

90% confidence

Tj=125°C

Fig. 8: Recovery charges versus d

IF/

dt

QRR(nC)

200

IF=2A

90% confidence

Tj=125°C

100

50

20

dIF/dt(A/µs)

10

10 20 50 100 200 500

Fig. 10: Dynamic parameters versus junction tem­perature.

QRR; IRM[Tj] / QRR; IRM[Tj=125°C]

1.25

1.00

1.0

dIF/dt(A/µs)

0.1
10 20 50 100 200 500

0.75

IRM

QRR

0.50

Tj(°C)

0.25
0 25 50 75 100 125 150

4/5

PACKAGE MECHANICAL DATA

SMA

STPR120A

DIMENSIONS

E1

E

C

L

FOOT PRINT (in millimeters)

REF.

Millimeters Inches

Min. Max. Min. Max.

D

A1 1.90 2.70 0.075 0.106
A2 0.05 0.20 0.002 0.008

b 1.25 1.65 0.049 0.065
c 0.15 0.41 0.006 0.016

E 4.80 5.60 0.189 0.220

A1

E1 3.95 4.60 0.156 0.181

A2

b

1.65

D 2.25 2.95 0.089 0.116

L 0.75 1.60 0.030 0.063

n

Marking : R12

n

Cathode band is inked

n

Epoxy meets UL94-V0

n

Weight: 0.06g

1.45 1.45

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2.40

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