Datasheet STPR1020CB-TR Datasheet (SGS Thomson Microelectronics)

®

STPR1020CB(-TR)

HIGH EFFICI EN CY FAST RECO VE RY REC T IFIER DIODES

MAIN PRODUCT CHARACTERISTIC S

I

F(AV)

V

RRM

(max) 35 ns

t

rr

2 x 5 A

200 V

FEATURES AND BENEFITS

SUITED FOR SMPS AND DRIVES
SURFACE MOUNT
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSS ES
HIGH SURGE CURRENT CA PABILITY
SURFACE M OUNT DE V ICE
TAPE AND REEL OPTION : -TR

DESCR IPTION

Dual rectifier suited for Switch Mode and high fre­quency converters.

Packaged in DPAK, this surface mount device is
intended for use in low voltage, high frequency in­verters, free wheeling and polarity protection appli­cations.

1

PRELIMINARY DATASHEET

2, 4(TAB)

4

3

2

3

1

DPAK

(Plastic)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

RRM

V

RSM

I

F(RMS)

I

F(AV)

I

FSM

Repetitive Peak Reverse Voltage 200 V
Non Repetitive Surge Reverse V olt age 220 V
RMS Forward Current Per diode 10 A
Average Forward Current

T

= 130°C δ = 0.5

case

Surge Non Repetitive Forward Current

Per diode
Per device

5

10

Per diode 70 A

tp = 10 ms Sinusoidal

Tstg Storage Temperature Range - 40 to + 150

Tj Max. Junction Temperature 150 °C

February 1999 - Ed : 2B

A

°

C

1/3

STPR1020CB(-T R)

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

R

th (j-c)

th (c)

Junction to Case Thermal Resistance Per diode 5

Coupling °C/W

When the diodes 1 and 2 are used simultaneously :

∆

Tj(diode 1) = P(diode) x R

(per diode) + P(diode 2) x R

th

Total 2.7

th (c)

°

C/W

STATIC ELECTRICAL CHARACTERISTICS

(per diode)

Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit

I

* Reverse leakage Current Tj = 25°CV

R

= V

R

RRM

20

Tj = 100°C0.150.5mA

V

** Forward Voltage drop Tj = 25°CI

F

Tj = 100°CI

Pulse test : * tp = 5 ms, duty cycle < 2 %

** tp = 380 µs, duty cycle < 2%

To evaluate the maximum conduction losses use the foll owing equati on :
P = 0.7 x I

F(AV)

+ 0.030 I

F2(RMS)

= 10 A 1.25 V

F

= 5 A 0.8 0.85

F

RECOVERY CH ARACTE RIST ICS

Symbol Test Conditions Min. Typ. Max. Unit

t

rr

t

fr

V

FP

Tj = 25°C IF = 1A

V

= 30V

F

Tj = 25°C IF = 1A

V

= 1.1 x V

FR

F

Tj = 25°C IF = 1A tr = 10 ns 5 V

/dt = -50 Α/ms 35 ns

dI

F

tr = 10 ns 20 ns

µ

A

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PACKAGE ME CHANICAL D AT A

DPAK

STPR1020CB( -TR)

DIMENSIONS

REF.

A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212

C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.251 0.259

G 4. 40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.397

L2 0.80 0.031
L4 0.60 1.00 0.023 0.039

V2 0° 8° 0° 8°

Millimeters Inches

Min. Typ. Max Min. Typ. Max.

FOOT PRINT

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or oth erwise under any patent or patent rights of STMi croelectronics . Specifications mentioned i n this publication are subjec t to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectr oni cs products are not authorized for use as critical components in l i fe s upport devices or systems without express written ap­proval of STMicroelectronics.

Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco -

The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.

in millimeters

6.7

6.7

6.7

3

1.61.6

2.32.3

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© 1999 STMicroelectronics - Printed in Italy - All rights reserved.

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