Datasheet STP9NK65ZFP, STP9NK65Z Datasheet (SGS Thomson Microelectronics)

STP9NK65Z

STP9NK65ZFP

N-CHANNEL 650V - 1Ω - 7A TO-220/TO-220FP

Zener-Protected SuperMESH™Power MOSFET

TARGET DATA

TYPE V

STP9NK65Z
STP9NK65ZFP

■ TYPICAL R

■ EXTREMELY HIGH dv/dtCAPABILITY

■ IMPROVED ESD CAPABILITY

■ 100% AVALANCHE RATED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURING

650 V
650 V

(on) = 1.0 Ω

DS

DSS

R

DS(on)

< 1.2 Ω
< 1.2 Ω7A7A

I

D

Pw

110 W

30 W

REPEATIBILITY

DESCRIPTION

The SuperM ESH™ s eries is obtained through an
extreme optimi za tio n of ST’s well established strip­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, spec ial care is tak­en to ensure a very good dv/dt capability fo r the
most demanding applications. Such series com ple­ments ST full range of high voltage MOSF ETs in­cluding revolutionary MDmesh™ products.

3

2

TO-220

1

TO-220FP

1

INTERNAL SCHEMATIC DIAGRAM

3

2

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP9NK65Z P9NK65Z TO-220 TUBE

STP9NK65ZFP P9NK65ZFP TO-220FP TUBE

July 2003

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STP9NK65 - ST P9NK 65ZFP

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP9NK65Z STP9NK65ZFP

V

DS

V

DGR

V

GS

I

D

I

D

IDM()

P

TOT

V

ESD(G-S)

dv/dt (1) Peak Diode Recovery voltage slope TBD V/ns

V

ISO

T

j

T

stg

() Pulse width limited by safe operating area
(1) I

≤TBD, di/dt ≤TBD, VDD≤ V

SD

(*) Limited only by maximum temperature allowed

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

650 V

650 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

7 7 (*) A

4.4 4.4 (*) A
Drain Current (pulsed) 28 28 (*) A
Total Dissipation at TC= 25°C

110 30 W
Derating Factor 0.88 0.24 W/°C
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3500 KV

Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature

Storage Temperature

(BR)DSS,Tj≤TJMAX.

-55 to 150

-55 to 150

°C
°C

THERMAL DATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1.14 4.2 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

300 °C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

E

AS

Single Pulse Avalanche Energy
(starting T

max)

j

= 25 °C, ID=IAR,VDD=50V)

j

7A

TBD mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIOD ES

The built-in bac k-to-back Zener diodes have specif ically been designed to enhance not only the device’s
ESD capability, but also to make them s a fely absorb possible voltage transients that may occasionally be
applied from gate tosouce. In this respect the Zener voltage is appropriateto achieve an efficient and cost­effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.

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STP9NK65 - ST P9NK 65ZFP

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=8V,ID= 3 A TBD S

g

fs

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

C

oss eq.

C

iss

C

oss

C

rss

Capacitance

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

ID=1mA,VGS= 0 650 V

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ± 20V ±10 µA

GS

V

DS=VGS,ID

= 100µA

3 3.75 4.5 V

1

50

VGS=10V,ID= 3 A 1.0 1.2 Ω

=25V,f=1MHz,VGS= 0 TBD

V

DS

TBD
TBD

VGS=0V,VDS= 0V to 480V TBD pF

VDD=325V,ID=3A
RG= 4.7Ω VGS=10V

TBD
TBD

(Resistive Load see, Figure 3)

=520V,ID=6A,

V
V

DD
GS

=10V

TBD
TBD
TBD

µA
µA

pF
pF
pF

ns
ns

nC
nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

VDD= 325 V, ID=3A
R

=4.7ΩVGS=10V

G

TBD
TBD

(Resistive Load see, Figure 3)

t

r(Voff)

t
t

Off-voltage Rise Time

f

c

Fall Time
Cross-over Time

= 520 V, ID=6A,

V

DD

RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)

TBD
TBD
TBD

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD= 7 A, VGS=0
I

SD

VDD=35V,Tj= 150°C
(see test circuit, Figure 5)

= 6 A, di/dt = 100A/µs

TBD
TBD
TBD

when VDSincreases from 0 to 80%

oss

7

28

1.6 V

ns
ns

ns
ns
ns

A
A

ns

µC

A

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STP9NK65 - ST P9NK 65ZFP

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Di ode Recovery Times

Fig. 4: Gate Charge test Circuit

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E

TO-220 MECHANICAL DATA

P011C

STP9NK65 - ST P9NK 65ZFP

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

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STP9NK65 - ST P9NK 65ZFP

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L5

L4

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STP9NK65 - ST P9NK 65ZFP

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use o f suc h inf ormat ion n or f or an y infr ingeme nt of paten ts or oth er ri gh ts of third part ies whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

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