Datasheet STP9NC65FP, STP9NC65 Datasheet (SGS Thomson Microelectronics)

STP9NC65

STP9NC65FP

N-CHANNEL 650V - 0.75Ω - 8A TO-220/TO-220FP

PowerMesh™II MOSFET

TYPE V

DSS

STP9NC65 650 V < 0.90
STP9NC65FP 650 V < 0.90

■ TYPICAL R

■ EXTREMELY HIGH dv /d t CAPABILITY

■ 100% AVALANCHE TESTED

■ NEW HIGH VOLTAGE BENCHMARK

■ GATE CHARGE MINIMIZED

(on) = 0.75 Ω

DS

R

DS(on)

I

D

Ω
Ω

8 A
8 A

DESCRIPTION

The PowerMESH
generation of MESH OVERLAY

™II is the evolution of the first

™. The layout re-

finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea d­ing edge for what concerns swithing speed, gate
charge and ruggedness.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLI ES ( SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES

TO-220 TO-220FP

(Available Upon Request)

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP9NC65 STP9NC65FP

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 3.5 V/ns

V

ISO

T

stg

T

j

(•)Pu l se width limite d by safe operating area
(*) Limited only by maximum temperature allowed

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

650 V
650 V

Gate- source Voltage ±30 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

(●)

Drain Current (pulsed) 32 32(*) A
Total Dissipation at TC = 25°C

8 8(*) A
5 5(*) A

140 40 W

Derating Factor 1.12 0.32 W/°C

Insulation Withstand Voltage (DC) - 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(1)ISD ≤8A, di/dt ≤100A/µs, VDD ≤ V

(BR)DSS

, Tj ≤ T

JMAX.

1/9February 2001

STP9NC65/FP

THERMA L D ATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 0.89 3.12 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source

= 25 °C, ID = IAR, VDD = 50 V)

j

ID = 250 µA, VGS = 0 650 V

8A

850 mJ

Breakdown Voltage

= Max Rating

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

V

DS

V

= Max Rating, TC = 125 °C

DS

V

= ±30V ±100 nA

GS

1µA

50 µA

ON

(1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS, ID = 250µA

DS

VGS = 10V, ID = 4.5 A

234V

0.75 0.90

Resistance

I

D(on)

On State Drain Current VDS > I

D(on)

x R

DS(on)max,

8A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS > I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 196 pF
Reverse Transfer

Capacitance

ID= 4.5A

V

DS

D(on)

x R

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

10 S

1400 pF

31 pF

Ω

2/9

STP9NC65/FP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 15 ns
Total Gate Charge

Gate-Source Charge 10.5 nC
Gate-Drain Charge 19.5 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

t

r(Voff)

t

t

f

f

c

Turn-Off Delay Time
Fall Time 30 ns
Off-voltage Rise Time

Fall Time 12 ns
Cross-over Time 24 ns

= 325 V, ID = 4.5 A

DD

RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)

V

= 520V, ID = 9 A,

DD

VGS = 10V

V

= 325V, ID = 4.5 A,

DD

RG=4.7Ω, V

GS

= 10V

(see test circuit, Figure 3)
V

= 520V, ID = 9 A,

DD

R

=4.7Ω, V

G

GS

= 10V

(see test circuit, Figure 5)

28 ns

44 62 nC

53 ns

15 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cyc l e 1.5 %.

2. Pulse width li mited by safe operating area.

Source-drain Current 8 A

(2)

Source-drain Current (pulsed) 32 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 5.14 µC

ISD = 8 A, VGS = 0
I

= 9 A, di/dt = 100A/µs

SD

V

= 100V, Tj = 150°C

DD

(see test circuit, Figure 5)

610 ns

Reverse Recovery Current 17 A

1.6 V

Safe Operating Area for TO-220 Safe Operating Area for TO-220FP

3/9

STP9NC65/FP

Thermal Impedance for TO-220

Output Characteristics

Thermal Impedance for TO-220FP

Transfer Characteristics

Transconductance Static Drain-source On Resistance

4/9

STP9NC65/FP

Gate Charge vs Gate-source Voltage

Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature

Capacitance Variations

Source-drain Diode Forward Characteristics

5/9

STP9NC65/FP

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/9

E

TO-220 MECHANICAL DATA

STP9NC65/FP

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

P011C

7/9

STP9NC65/FP

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

8/9

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

STP9NC65/FP

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