Datasheet STP9NB60, STP9NB60FP Datasheet (SGS Thomson Microelectronics)

STP9NB60



N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FP

TYPE V

STP9NB60
STP9NB60 FP

■ TYPICALR

■ EXTREMELYHIGH dv/dt CAPABILITY

■ 100%AVALANCHETESTED

■ VERYLOW INTRINSIC CAPACITANCES

■ GATECHARGE MINIMIZED

DS(on)

DSS

600 V
600 V

= 0.7

DESCRIPTION

Using the latest high voltageMESHOVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.

Ω

R

DS(on)

<0.8Ω
<0.8

Ω

I

D

9.0 A

9.0 A

STP9NB60FP

PowerMESH MOSFET

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGHCURRENT, HIGHSPEED SWITCHING

■ SWITCHMODE POWER SUPPLIES(SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

ST P9 NB60 STP 9NB 60FP

V

V

V

I

DM

P

dv/ dt(

V

T

(•) Pulse width limited by safe operating area (1)ISD≤ 9A, di/dt ≤ 200 A/µs,VDD≤ V

Limited only by maximum temperatureallowed

(*)

January 2000

Drain - source Vo lt age ( VGS=0) 600 V

DS

Drain - gate V olt a ge (RGS=20kΩ)

DGR

Gate-source Voltage

GS

Drain Curre nt (continuous ) at Tc=25oC9.09.0(*)A

I

D

Drain Curre nt (continuous ) at Tc=100oC5.75.7(*)A

I

D

600 V

30 V

±

(•) Drain Curre nt (puls ed) 36 36 A

Total Dissipation at Tc=25oC 125 40 W

tot

Derating F act or 1.0 0.32 W/

) Peak Diode Rec o v e ry voltag e slope 4.5 4.5 V/ns

1

Insulation Withstand Voltage (DC)  2000 V

ISO

Storage Temperature -65 to 150

stg

Max. Operating Junction Temp er ature 150

T

j

,Tj≤T

(BR)DSS

JMAX

o

C

o

C

o

C

1/9

STP9NB60/FP

THERMAL DATA

TO-220 TO-220FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Para meter Max Val ue Uni t

I

AR

E

Ther mal Resist ance Junction- c as e Max 1.0 3.12
Ther mal Resist ance Junction- am b ien t Max

Thermal Resistance Case-sink Typ
Maximum Lead Temperat ure F o r Soldering Purp os e

l

Avalanche Current, Repetitive or Not- Re petitive
(pulse width limited by T

Single Pulse Avalanche En ergy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max, δ <1%)

j

62.5

0.5

300

9A

850 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

(BR)DSS

Drain-sourc e

=250µAVGS=0

I

D

600 V

Break d own Vo lt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Curr ent (V

GS

Gat e- b ody Leaka ge
Current ( V

DS

=0)

=0)

V

=MaxRating

DS

= Max Rating Tc=125oC

V

DS

=± 30 V

V

GS

1

50

100 nA

±

ON(∗)

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

GS(th)

Gate Threshold

V

DS=VGSID

= 250µA

345V

Voltage

R

DS(on)

Static Drain-source On

VGS=10V ID=3A 0.7 0.8 Ω

Resistanc e

I

D(on)

On S t ate Drain Current VDS>I

D(on)xRDS(on)max

9.0 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

g

(∗)Forward

fs

Tr ansconductanc e

C

C

C

Input Capacitanc e

iss

Out put Capacit ance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=4.5A 3.0 6.5 S

VDS=25V f=1MHz VGS= 0 1480

210

25

1924

273

33

µ
µA

pF
pF
pF

A

2/9

STP9NB60/FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

t

d(on)

Turn-on Time

r

Rise Time

t

VDD= 300 V ID=4.5A
R

=4.7

G

Ω

VGS=10V

25
11

35
15

(see test circuit, figure 3)

Q
Q
Q

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD= 480 V ID=9.0AVGS=10V 40

10.5

17.5

56 nC

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

t

r(Voff)

t

t

Off -voltage Rise Time
Fall Time

f

Cross-ov er Tim e

c

VDD= 480 V ID=9.0A

=4.7 ΩVGS=10V

R

G

(see test circuit, figure 5)

12
10
21

17
14
29

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea

Source-drain Current

(•)

Source-drain Current

9.0
36

(pulsed)

(∗) Forward On Voltage ISD=9.0A VGS=0 1.6 V

Reverse R ec o very

rr

Time
Reverse R ec o very

rr

=9.0A di/dt=100A/µs

I

SD

= 100 V Tj=150oC

V

DD

(see test circuit, figure 5)

600

5.4
Charge
Reverse R ec o very

18

Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µ

A

C

SafeOperating Area for TO-220 SafeOperating Area for TO-220FP

3/9

STP9NB60/FP

ThermalImpedancefor TO-220

OutputCharacteristics

ThermalImpedanceforTO-220FP

TransferCharacteristics

Transconductance

4/9

Static Drain-sourceOn Resistance

STP9NB60/FP

Gate Charge vs Gate-sourceVoltage

Normalized Gate ThresholdVoltage vs
Temperature

CapacitanceVariations

Normalized On Resistance vsTemperature

Source-drainDiode Forward Characteristics

5/9

STP9NB60/FP

Fig. 1:

UnclampedInductive Load Test Circuit

Fig. 3: Switching Times Test Circuits For
ResistiveLoad

Fig. 2:

UnclampedInductive Waveform

Fig. 4: Gate Charge test Circuit

Fig. 5:

Test CircuitFor InductiveLoad Switching

And Diode Recovery Times

6/9

TO-220 MECHANICAL DATA

STP9NB60/FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

P011C

C

D1

L2

Dia.

L5

L7

L6

L9

7/9

STP9NB60/FP

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

8/9

STP9NB60/FP

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
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are not authorized for useas critical components in life support devices or systemswithout express written approval of STMicroelectronics.

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