Datasheet STP9NB50FP, STP9NB50 Datasheet (SGS Thomson Microelectronics)

STP9NB50

STP9NB50FP

N-CHANNEL 500V - 0.75

TYPE V

STP9NB50 500 V < 0.85 Ω 8.6 A
STP9NB50FP 500 V < 0.85 Ω 4.9 A

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

DS

DSS

(on) = 0.75Ω

DESCRIPTION

Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad­vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled withthe Company’s proprieraty edgetermi­nation structure, gives the lowest R
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris­tics.

R

DS(on)

DS(on)

I

D

per area,

Ω

- 8.6 A TO-220/TO-220FP
PowerMesh MOSFET

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

TO-220FP

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES ANDMOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP9NB50 STP9NB50FP

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns

V

ISO

T

stg

T

(•)Pulse width limitedby safe operating area

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ±30 V
Drain Current (continuos) at TC=25°C
Drain Current (continuos) at TC= 100°C

(●)

Drain Current (pulsed) 34.4 34.4 A
TotalDissipation at TC=25°C
Derating Factor 1 0.32 W/°C

Insulation Withstand Voltage (DC) - 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

j

(1)ISD<9A, di/dt<200A/µ,VDD<V

8.6 4.9 A

5.4 3.1 A

125 40 W

500 V
500 V

,TJ<T

(BR)DSS

JMAX

1/9May 2000

STP9NB50/FP

THERMAL DATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1 3.13 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

Gate-body Leakage
Current (V

=25°C, ID=IAR,VDD=50V)

j

I

= 250 µA, VGS=0

D

= Max Rating

V

DS

=0)

DS

GS

=0)

V

= Max Rating, TC= 125 °C

DS

= ±30V

V

GS

500 V

8.6 A

520 mJ

1 µA

50 µA

±100 nA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

On State Drain Current

V

DS=VGS,ID

= 10V, ID= 4.3 A

V

GS

V

DS>ID(on)xRDS(on)max,

= 250 µA

VGS=10V

345V

0.75 0.85 Ω

8.6 A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

g

(1)

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance 175 pF
Reverse Transfer

Capacitance

DS>ID(on)xRDS(on)max,

ID= 4.3 A

V

= 25V, f = 1 MHz, VGS=0

DS

5.7 S

1250 pF

20 pF

2/9

STP9NB50/FP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Q

Q

gs

Q

gd

Turn-on Delay Time
Rise Time

TotalGate Charge

g

Gate-Source Charge 10.6 nC
Gate-Drain Charge 13.7 nC

SWITCHING OFF

Symbol Parameter TestConditions Min. Typ. Max. Unit

t

r(Voff)

t

t

f

c

Off-voltage Rise Time
Fall Time 11 ns
Cross-over Time 20 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current 8.6 A

(2)

Source-drain Current (pulsed) 34.4 A

(1)

Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 3.5 µC
Reverse Recovery Current 16.5 A

V

= 250 V,ID= 4.3 A

DD

= 4.7Ω VGS=10V

R

G

(see test circuit, Figure 3)

V

= 400V, ID= 8.6 A,

DD

= 10V

V

GS

V

= 400V, ID= 8.6 A,

DD

=4.7Ω, VGS= 10V

R

G

(see test circuit, Figure 5)

ISD= 8.6 A, VGS=0
I

= 8.6 A, di/dt = 100A/µs,

SD

= 100V, Tj= 150°C

V

DD

(see test circuit, Figure 5)

19 ns
11 ns
32 45 nC

11.5 ns

1.6 V

420 ns

Safe Operating Area Safe OperatingArea for TO-220FP

3/9

STP9NB50/FP

Thermal Impedence for TO-220

Output Characteristics

Thermal Impedence for TO-220FP

Transfer Characteristics

Transconductance

4/9

Static Drain-source On Resistance

STP9NB50/FP

Gate Charge vs Gate-source Voltage

Normalized Gate Threshold Voltage vs Temp.

Capacitance Variations

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/9

STP9NB50/FP

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test CircuitFor

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/9

TO-220 MECHANICAL DATA

STP9NB50/FP

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106

H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

A

C

mm inch

E

D

L5

L7

Dia.

D1

L6

L2

L9

L4

F2

F1

G1

H2

G

F

P011C

7/9

TO-220FP MECHANICAL DATA

STP9NB50/FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

A

mm inch

E

D

B

L3

L6

L7

¯

H

L2

F1

F

G1

G

F2

123

L4

8/9

STP9NB50/FP

Information furnished is believed to beaccurate and reliable. However, STMicroelectronics assumes no responsibility for theconsequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patentor patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. Thispublication supersedes and replaces allinformation previously supplied. STMicroelectronics products
are not authorized foruse as critical components in life support devices or systems without express written approval ofSTMicroelectronics.

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