Datasheet STP9NA50, STP9NA50FI Datasheet (SGS Thomson Microelectronics)

STP9NA50

STP9NA50FI

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

■ TYPICAL R

DS(on)

= 0.7 Ω

■ ± 30V GATE TO SOURCE VOLTAGE RATING

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

o

C

■ LOW INTRINSIC CAPACITANCES

■ GATE GHARGE MINIMIZED

■ REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low R

DS(on)

and gate charge, unequalled

ruggedness and superior switching performance.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWERSUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

TYPE V

DSS

R

DS(on)

I

D

STP 9NA50
STP 9NA50FI

500 V
500 V

<0.8Ω
<0.8Ω

8.8 A
5A

1

2

3

TO-220 ISOWATT220

February 1994

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Val u e Unit

ST P9NA50 ST P9NA50FI

V

DS

Drain - source Voltage (VGS=0) 500 V

V

DGR

Drain - gat e Voltage (RGS=20kΩ)500V

V

GS

Gate-source Voltage ± 30 V

I

D

Drain Current (continuous) at Tc=25oC8.85A

I

D

Drain Current (continuous) at Tc=100oC5.5 3.1A

I

DM

(•) Drain Current (pulsed) 35 35 A

P

tot

Total Di ssipation a t Tc=25oC 125 45 W
Derating F actor 1 0.36 W/

o

C

V

ISO

Ins ulation Withs t and Voltage (DC)  2000 V

T

stg

St orage Temperat ur e -65 t o 150

o

C

T

j

Max. Operating Jun ction T emperat ure 150

o

C

(•) Pulsewidth limited by safe operating area

1

2

3

1/10

THERMAL DATA

TO-220 ISOW ATT 220

R

thj-case

Thermal Resistance J unction- c ase Max 1 2.78

o

C/W

R

thj-amb

R

thc-sink

T

l

Thermal Resistance Junc tion-am bie nt Max
Thermal Resistance Cas e-sink Typ
Maximum Lead Temperature For So ldering Purpose

62.5

0.5

300

o

C/W

o

C/W

o

C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(pulse width limited by Tjmax, δ <1%)

8.8 A

E

AS

Single Pul se A v alanche Energy
(starti ng T

j

=25oC, ID=IAR,VDD=50V)

390 mJ

E

AR

Repetitive Avalanc he Energ y
(pulse width limited by Tjmax, δ <1%)

15 mJ

I

AR

Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(Tc= 100oC, pulse width l imited by Tjmax, δ <1%)

5.5 A

ELECTRICAL CHARACTERISTICS (T

case

=25oC unless otherwisespecified)

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain - source
Break d own Voltage

ID=250µAVGS= 0 500 V

I

DSS

Zer o G at e V oltage
Drain Current (VGS=0)

VDS=MaxRating
VDS= Max Rating x 0.8 Tc=125oC

250

1000µAµA

I

GSS

Gat e- body Leakage
Current (V

DS

=0)

V

GS

= ± 30 V ± 100 nA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold Voltage VDS=VGSID=250µA 2.25 3 3.75 V

R

DS(on)

St at ic Drain-s ourc e O n
Resistance

VGS=10V ID=4.5A
VGS=10V ID=4.5A Tc= 100oC

0.7 0.8

1.6

Ω
Ω

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

VGS=10V

9A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

(∗)Forward

Tr ansconduct anc e

VDS>I

D(on)xRDS(on)maxID

=4.5A 4 7 S

C

iss

C

oss

C

rss

Input Capacitance
Out put Capacitance
Reverse Transfer
Capaci tance

VDS=25V f=1MHz VGS= 0 1350

200

50

1800

270

70

pF
pF
pF

STP9NA50/FI

2/10

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on T ime
Rise Time

VDD=250V ID=4.5A
RG=4.7 Ω VGS=10V
(see test circuit, figure 3)

18
25

25
35

ns
ns

(di/dt)

on

Turn-on Current S lope VDD=400V ID=9A

RG=47 Ω VGS=10V
(see test circuit, figure 5)

200 A/µs

Q

g

Q

gs

Q

gd

Total Gate Charge
Gat e- Source Charge
Gate-Drain Charge

VDD= 400 V ID=9A VGS=10V 56

9

26

75 nC

nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

f

t

c

Off -voltage Rise Time
Fall Time
Cross-over Time

VDD=400V ID=9A
RG=4.7 Ω VGS=10V
(see test circuit, figure 5)

15
15
25

20
20
35

ns
ns
ns

SOURCE DRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

(•)

Source-drain C urrent
Source-drain C urrent
(pulsed)

8.8
35

A
A

V

SD

(∗) Forward On Voltage ISD=9A VGS=0 1.6 V

t

rr

Q

rr

I

RRM

Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current

ISD=9A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)

560

9

32

ns

µC

A

(∗) Pulsed: Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Areas for TO-220 Safe Operating Areas forISOWATT220

STP9NA50/FI

3/10

Thermal ImpedeanceFor TO-220

Derating Curve For TO-220

Output Characteristics

Thermal ImpedanceFor ISOWATT220

Derating Curve For ISOWATT220

Transfer Characteristics

STP9NA50/FI

4/10

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs

Temperature

STP9NA50/FI

5/10

Turn-on Current Slope Turn-off Drain-source Voltage Slope

Cross-over Time Switching Safe Operating Area

Accidental Overload Area Source-drain Diode ForwardCharacteristics

STP9NA50/FI

6/10

Fig. 2: Unclamped Inductive Waveforms

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time

Fig. 1: Unclamped Inductive Load Test Circuits

STP9NA50/FI

7/10

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

L6

A

C

D

E

D1

F

G

L7

L2

Dia.

F1

L5

L4

H2

L9

F2

G1

TO-220 MECHANICAL DATA

P011C

STP9NA50/FI

8/10

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.4 0.7 0.015 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

L2

A

B

D

E

H

G

L6

Ø

F

L3

G1

123

F2

F1

L7

L4

ISOWATT220 MECHANICAL DATA

P011G

STP9NA50/FI

9/10

Information furnished isbelieved to be accurateand reliable. However, SGS-THOMSONMicroelectronics assumes noresponsability for the
consequences of use of suchinformation nor for any infringementof patents orother rights of third parties whichmay results from its use. No
license isgrantedby implicationor otherwiseunder anypatentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subjectto change without notice.This publication supersedes and replacesall information previouslysupplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor useascriticalcomponents inlifesupportdevices orsystemswithout express
written approvalof SGS-THOMSON Microelectonics.

 1994 SGS-THOMSONMicroelectronics - All Rights Reserved

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STP9NA50/FI

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