This Power MOSFET is t he s ec ond generation of
STMicroelectronics unique “STripFET™” tec hnology.The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLAT™ package allow a significant reduction in
board space without compramising performance.
APPLICATIONS
DC-DC CONVERTERS
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
PowerFLAT™(5x5)
(Chip Scale Package)
INTERNAL SCHEMATIC DIAGR AM
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
DS
V
DGR
V
GS
I
D
I
DM
P
TOT
E
AS
T
stg
T
j
(•)Pulse width limited by safe operating area
(*) Current Limited by Wire Bonding is 20A
November 2002
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage± 20V
Drain Current (continuous) at TC= 25°C (*)
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed)136A
Total Dissipation at TC= 25°C
Derating Factor0.56W/°C
(1)
Single Pulse Avalanche Energy250mJ
Storage Temperature
Max. Operating Junction Temperature
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility f or t he
consequences of use of su ch in formation nor for any in fringement of patents or other rights of third parties w hich may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as cr itical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.
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