Datasheet STL30NF3LL Datasheet (SGS Thomson Microelectronics)

Page 1
STL30NF3LL
N-CHANNEL 30V - 0.008Ω - 30A PowerFLAT ™
LOW GATE CHARGE STripFET™ MOSFET
PRELIMINARY DATA
TYPE V
DSS
R
DS(on)
I
D
STL30NF3LL 30 V < 0.010 30 A
TYPICAL R
IMPROVED DIE-TO-FOOTPRINT RATIO
VERY LOW PROFILE PACKAGE
DS
DESCRIPTION
This Power MOSFET is t he second generation of
STMicroelectronics unique “STripFET™” technolo­gy. The resulting transistor shows extremely low on­resistance and minimal gate charge. The new Pow­erFLAT™ package allows a significant reduction in board space without compromising performance.
APPLICATIONS
DC-DC CONVERTERS
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
PowerFLAT™(6x5)
(Chip Scale Package)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
(#) Drain Current (continuos) at TC = 25°C
D
I
DM
P
TOT
T
stg
T
j
() Pulse width limited by safe operating area (#) Limited by Wire Bonding
November 2001
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k)
30 V 30 V
Gate- source Voltage ± 16 V
30
Drain Current (continuos) at T
(l)
Drain Current (pulsed) 120 A Total Dissipation at TC = 25°C
= 100°C
C
19
80 W Derating Factor 0.64 W/°C Storage Temperature Max. Operating Junction Temperature
– 55 to 150 °C
A A
1/6
Page 2
STL30NF3LL
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 1.56 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 50 °C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current (V
GS
Gate-body Leakage Current (V
DS
= 0)
= 0)
ON
I
DSS
I
GSS
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage Static Drain-source On
Resistance
ID = 250 µA, VGS = 0 30 V
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 16V ±100 nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 15A
1V
0.008 0.010
0.0095 0.013
A
10 µA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS = 15V, ID= 15 A 30 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance Output Capacitance 635 pF Reverse Transfer
Capacitance
V
= 25 V, f = 1 MHz, VGS = 0
DS
2210 pF
138 pF
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STL30NF3LL
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q Q Q
t
r
g gs gd
Turn-on Delay Time Rise Time 130 ns Total Gate Charge
Gate-Source Charge Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time Fall Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 30 A
(2)
Source-drain Current (pulsed) 120 A Forward On Voltage Reverse Recovery Time
Reverse Recovery ChargeReverse Recovery Current
= 15 V, ID = 30 A
DD
R
= 4.7 VGS = 4.5V
G
(see test circuit, Figure 1) VDD = 24 V, ID = 30 A,
VGS = 5 V (see test circuit, Figure 1)
VDD = 15 V, ID = 30 A, RG=4.7Ω, V
GS
= 4.5 V
(see test circuit, Figure 1)
ISD = 15 A, VGS = 0
= 30 A, di/dt = 100A/µs,
I
SD
VDD = 15 V, Tj = 150°C (see test circuit, Figure 3)
22 ns
30
40 nC
9
12.5
36.5
36.5
1.2 V
65
105
3.4
nC nC
ns ns
ns
nC
A
3/6
Page 4
STL30NF3LL
Resistive Load
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 2: Gate Charge test CircuitFig. 1: Switching Times Test Circuit For
4/6
Page 5
PowerFLAT(6x5) MECHA NICA L DATA
STL30NF3LL
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 0.80 1.00 0.031 0.039
A1 0.02 0.001
b 0.35 0.47 0.014 0.018 C 1.61 0.063 D 5.00 0.197
D2 4.15 4.25 0.163 0.167
E 6.00 0.236
E2 3.55 3.65 0.140 0.144
e 1.27 0.049 F 1.99 0.078 G 2.20 0.086 H 0.40 0.015
I 0.219 0.0086
L 0.70 0.90 0.028 0.035
mm. inch
5/6
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STL30NF3LL
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