STMicroelectronics unique “STripFET™” technology. The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLAT™ package allows a significant reduction in
board space without compromising performance.
APPLICATIONS
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
PowerFLAT™(6x5)
(Chip Scale Package)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
DS
V
DGR
V
GS
I
(#)Drain Current (continuos) at TC = 25°C
D
I
DM
P
TOT
T
stg
T
j
(●) Pulse width limited by safe operating area
(#) Limited by Wire Bonding
November 2001
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
30V
30V
Gate- source Voltage± 16 V
30
Drain Current (continuos) at T
(l)
Drain Current (pulsed)120A
Total Dissipation at TC = 25°C
= 100°C
C
19
80W
Derating Factor0.64W/°C
Storage Temperature
Max. Operating Junction Temperature
– 55 to 150°C
A
A
1/6
Page 2
STL30NF3LL
THERMA L D ATA
Rthj-caseThermal Resistance Junction-case Max 1.56°C/W
Rthj-ambThermal Resistance Junction-ambient Max 50°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
SymbolParameterTest ConditionsMin.Typ.Max.Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
ON
I
DSS
I
GSS
(1)
SymbolParameterTest ConditionsMin.Typ.Max.Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
ID = 250 µA, VGS = 030V
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 16V±100nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 15A
1V
0.0080.010Ω
0.00950.013Ω
1µA
10µA
DYNAMIC
SymbolParameterTest ConditionsMin.Typ.Max.Unit
(1)Forward TransconductanceVDS = 15V, ID= 15 A30S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance635pF
Reverse Transfer
Capacitance
V
= 25 V, f = 1 MHz, VGS = 0
DS
2210pF
138pF
2/6
Page 3
STL30NF3LL
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SymbolParameterTest ConditionsMin.Typ.Max.Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time130ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
SymbolParameterTest ConditionsMin.Typ.Max.Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
SOURCE DRAIN DIODE
SymbolParameterTest ConditionsMin.Typ.Max.Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current30A
(2)
Source-drain Current (pulsed)120A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery
ChargeReverse Recovery
Current
= 15 V, ID = 30 A
DD
R
= 4.7Ω VGS = 4.5V
G
(see test circuit, Figure 1)
VDD = 24 V, ID = 30 A,
VGS = 5 V
(see test circuit, Figure 1)
VDD = 15 V, ID = 30 A,
RG=4.7Ω, V
GS
= 4.5 V
(see test circuit, Figure 1)
ISD = 15 A, VGS = 0
= 30 A, di/dt = 100A/µs,
I
SD
VDD = 15 V, Tj = 150°C
(see test circuit, Figure 3)
22ns
30
40nC
9
12.5
36.5
36.5
1.2V
65
105
3.4
nC
nC
ns
ns
ns
nC
A
3/6
Page 4
STL30NF3LL
Resistive Load
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 2: Gate Charge test CircuitFig. 1: Switching Times Test Circuit For
4/6
Page 5
PowerFLAT™(6x5) MECHA NICA L DATA
STL30NF3LL
DIM.
MIN.TYPMAX.MIN.TYP.MAX.
A0.801.000.0310.039
A10.020.001
b0.350.470.0140.018
C1.610.063
D5.000.197
D24.154.250.1630.167
E6.000.236
E23.553.650.1400.144
e1.270.049
F1.990.078
G2.200.086
H0.400.015
I0.2190.0086
L0.700.900.0280.035
mm.inch
5/6
Page 6
STL30NF3LL
6/6
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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