Datasheet STL28NF3LL Datasheet (SGS Thomson Microelectronics)

STL28NF3LL

N-CHANNEL 30V - 0.0055Ω -28APowerFLAT™

LOW GATE CHARGE STripFET™ MOSFET

PRELIMINARY DATA

TYPE V

STL28NF3LL 30 V < 0.0065 Ω 28 A

■ TYPICAL R

■ IMPROVED DIE-TO-FOOTPRINT RATIO

■ VERY LOW PROFILE PACKAGE

DS

DSS

(on) = 0.0055Ω

R

DS(on)

I

D

DESCRIPTION

This Power MOSFET is the second generation of
STMicroelectronics unique “ STripFET™” technolo­gy.The resulting transistor shows extremely low on­resistance and minimal gate charge. The new Pow­erFLAT™ package allows a significant reduction in
board space without compromising performance.

APPLICATIONS

■ DC-DC CONVERTERS

PowerFLAT™(5x5)

(Chip Scale Package)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

(#) Drain Current (continuos) at TC= 25°C

D

I

DM

P

TOT

E

AS

T

stg

T

j

(●) Pulse width limited by safe operating area
(#) Limited by Wire Bonding

November 2002

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ± 16 V

Drain Current (continuos) at TC= 100°C

()

Drain Current (pulsed) 112 A
Total Dissipation at TC= 25°C
Derating Factor 0.64 W/°C

(1)

Single Pulse Avalanche Energy 2 J
Storage Temperature
Max. Operating Junction Temperature

(1) Starting Tj= 25°C, ID= 14A, VDD=18V

30 V
30 V

28

17.5

80 W

–55 to 150 °C

A
A

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STL28NF3LL

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 1.56 °C/W

Rthj-pcb (#) Thermal Resistance Junction-ambient Max 31.2 °C/W

(*) When mounted on 1inch² FR4 Board, 2oz of Cu, t ≤ 10 sec.

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

=0)

=0)

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

ID= 250 µA, VGS= 0 30 V

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ± 16V ±100 nA

GS

V

DS=VGS,ID

VGS=10V,ID=14A

= 4.5 V, ID= 14A

V

GS

= 250µA

1V

0.0055 0.0065 Ω

0.0065 0.0095 Ω

1µA

10 µA

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=15V,ID=14A 32 S

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 890 pF
Reverse Transfer

Capacitance

V

=25V,f=1MHz,VGS=0

DS

2780 pF

195 pF

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STL28NF3LL

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 82 ns
Total Gate Charge

Gate-Source Charge
Gate-Drain Charge

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Turn-off-Delay Time
Fall Time

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current 28 A

(2)

Source-drain Current (pulsed) 112 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery
ChargeReverse Recovery
Current

=15V,ID=14A

DD

= 4.7Ω VGS=4.5V

R

G

(see test circuit, Figure 3)
VDD=15V,ID=28A,

V

=5V

GS

VDD=15V,ID=14A,
RG=4.7Ω, VGS= 4.5 V
(see test circuit, Figure 3)

ISD=28A,VGS=0

= 28 A, di/dt = 100A/µs,

I

SD

V

=25V,Tj= 150°C

DD

(see test circuit, Figure 5)

25 ns

32

43 nC
13
18

42
35

1.2 V

50
82

3.3

nC
nC

ns
ns

ns

nC

A

3/6

STL28NF3LL

Fig. 2: Unclam ped Inductive WaveformFig. 1: Unclamped Inducti ve Load T es t Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

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STL28NF3LL

PowerFLAT™(5x5) MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 0.90 1.00 0.035 0.039

A1 0.02 0.05 0.001 0.002

b 0.43 0.51 0.58 0.017 0.020 0.023

c 0.33 0.41 0.48 0.013 0.016 0.019

D 5.00 0.197

E 5.00 0.197

E2 3.10 3.18 3.25 0.122 0.125 0.128

e 1.27 0.050

mm. inch

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STL28NF3LL

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its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as c ritical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.

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