Page 1
STGP7NB60H
N-CHANNEL 7A - 600V TO-220
PowerMESH IGBT
TYPE V
CES
V
CE(sat)
I
C
ST G P7NB60H 600 V < 2.8 V 7 A
■ HIGHINPUT IMPEDANCE
(VOLTAGEDRIVEN)
■ LOW ON-VOLTAGEDROP (V
■ LOW GATECHARGE
■ HIGHCURRENTCAPABILITY
■ VERYHIGH FREQUENCYOPERATION
■ OFFLOSSES INCLUDETAIL CURRENT
cesat
)
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequencyapplications(<120kHz).
APPLICATIONS
■ HIGHFREQUENCY MOTOR CONTROLS
■ SMPSAND PFC IN BOTH HARDSWITCH
AND RESONANTTOPOLOGIES
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
CM
P
T
(•) Pulsewidth limited by safeoperating area
June 1999
Collect o r -Em i t t er Voltage (VGS= 0) 600 V
CES
Emit t er-Collect or Volt age 20 V
ECR
Gate-Emitter V oltage
GE
I
Collect o r Current (continuous ) at Tc=25oC14A
C
I
Collect o r Current (continuous ) at Tc= 100oC7A
C
20 V
±
(•) Collect o r Current (pulsed) 56 A
Tot al Dissipation at Tc=25oC80W
tot
Derat ing Factor 0.64 W/
Sto rage Temperature -65 to 150
stg
T
Max. Oper a t ing Junction Tem per ature 150
j
o
C
o
C
o
C
1/8
Page 2
STGP7NB60H
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
1.56
62.5
0.5
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwise specified)
(T
j
OFF
Sym bol Paramet er Test Co ndit ions Min . Typ. Max. Unit
V
BR(CES)
Collector-Emitter
IC=250µAVGE= 0 600 V
Break dow n Voltage
I
I
CES
GES
Collect o r cut-of f
=0)
(V
GE
Gat e- Em i t t er Leakage
Current (V
CE
=0)
V
=MaxRating Tj=25oC
CE
=MaxRating Tj=125oC
V
CE
V
= ± 20 V VCE=0 ±100 nA
GE
10
100
ON(∗)
Sym bol Paramet er Test Co ndit ions Min . Typ. Max. Unit
V
GE(th)
Gate Th reshold
VCE=VGEIC= 250 µ A35V
Voltage
V
CE(SAT)
Collector-Emitter
Sat urat ion Voltage
VGE=15V IC=7A
V
=15V IC=7A Tj=125oC
GE
2.3
1.9
2.8 V
DYNAMIC
Sym bol Paramet er Test Co ndit ions Min . Typ. Max. Unit
C
C
C
Q
Q
g
Q
I
CL
Forward
fs
Tr ansc on duc tance
Input Capaci t anc e
ies
Out put Capac it ance
oes
Reverse Transfer
res
Capacit a nc e
Tot al Gate Charge
G
Gate-Emitt er C harge
GE
Gat e- Col lect or C har ge
GC
Latc hing C urrent V
VCE=25 V IC=7A 3.5 5 S
VCE=25V f=1MHz VGE= 0 390
45
10
VCE= 480 V IC=7A VGE=15V 42
560
68
15
730
90
20
55 nC
7.9
17.6
=480V RG=10Ω
clamp
T
= 150oC
j
28 A
µA
µ
V
pF
pF
pF
nC
nC
A
SWITCHINGON
Sym bol Paramet er Test Co ndit ions Min . Typ. Max. Unit
(di/dt)
2/8
t
d(on)
E
Delay Time
t
Rise Tim e
r
Tur n-on Current Slope
on
Turn-on
on
Switching Losses
VCC= 480 V IC=7A
=15V RG=10Ω
V
GE
VCC=480V IC=7A
=10Ω VGE=15V
R
G
T
=125oC
j
15
48
160
70
ns
ns
A/µs
J
µ
Page 3
STGP7NB60H
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGOFF
Sym bol Paramet er Test Co ndit ions Min . Typ. Max. Unit
t
tr(v
(off)
t
d
E
off
E
t
tr(v
(off)
t
d
E
off
E
(•) Pulse width limited by max. junction temperature
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(**)Losses Include Also The Tail (Jedec Standardization)
Cross-Over Tim e
c
Off Voltage Rise Time
)
off
Delay Time
t
Fall T ime
f
(**)
Turn-off Switching Loss
Tot al Switching Lo ss
ts
Cross-Over Tim e
c
)
Off Voltage Rise Time
off
Delay Time
t
Fall T ime
f
(**)
Turn-off Switching Loss
Tot al Switching Lo ss
ts
VCC=480V IC=7A
R
GE
=10
Ω
VGE=15V
VCC = 480 V IC=7A
R
GE
= 125oC
T
j
=10
Ω
VGE=15V
85
20
75
70
85
130
150
50
110
110
220
290
ns
ns
ns
ns
µJ
µ
ns
ns
ns
ns
µ
µ
J
J
J
ThermalImpedance
3/8
Page 4
STGP7NB60H
OutputCharacteristics
Transconductance
TransferCharacteristics
Collector-EmitterOn Voltagevs Temperature
Collector-EmitterOn Voltagevs Collector Current
4/8
Gate Thresholdvs Temperature
Page 5
STGP7NB60H
NormalizedBreakdown Voltage vs Temperature
Gate Chargevs Gate-EmitterVoltage
CapacitanceVariations
TotalSwitchingLossesvs Gate Resistance
TotalSwitchingLossesvs Temperature
TotalSwitchingLossesvs Collector Current
5/8
Page 6
STGP7NB60H
SwitchingOff SafeOperatingArea
Fig. 1:
Gate Charge test Circuit
Fig. 3: Switching Waveforms
Fig. 2:
TestCircuitFor Inductive LoadSwitching
6/8
Page 7
TO-220 MECHANICALDATA
STGP7NB60H
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
P011C
C
D1
L2
Dia.
L5
L7
L6
L9
7/8
Page 8
STGP7NB60H
Information furnished is believedtobeaccurateand reliable.However, STMicroelectronics assumesno responsibility forthe consequences
of use of such information nor for any infringement of patents or other rights of third parties which may resultfrom its use. No license is
granted by implication orotherwise under any patent or patentrights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice.Thispublicationsupersedes andreplacesall information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devicesor systems without expresswritten approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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8/8
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