Datasheet STGP10NC60KD, STGF10NC60KD, STGB10NC60KD Datasheet (ST)

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查询STG3684A供应商

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK

STGP10NC60KD - STGF10NC60KD

STGB10NC60KD

SHORT CIRCUIT RATED PowerMESH™ IGBT

Table 1: General Fe a ture s

TYPE V

STGB10NC60KD
STGF10NC60KD
STGP10NC60KD

■ LOWER ON-VOLTAGE DROP (V

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOWER C

■ SWITCHING LOSSES INCLUDE DIODE

RES

CESVCE(sat)

600 V
600 V
600 V

/ C

RATIO

IES

(Max)

@25°C
< 2.5 V

< 2.5 V
< 2.5 V

cesat

I

C

@100°C

10 A
6 A
10 A

)

RECOVERY ENERGY

■ VERY SOFT ULTRA FAST RECOVERY

ANTIPARALLEL DIODE

■ NEW GENERATION PRODUCTS WITH

TIGHTER PARAMETER DISTRUBUTION

DESCRIPTION

Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow

­erMESH™ IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control applications with short cir

­cuit withstand capab ilit y.

Figure 1: Package

2

TO-220FPTO-220

1

D²PAK

Figure 2: Internal Schematic Diagram

2

APPLICATIONS

■ HIGH FREQUENCY MOTOR CONTROLS

■ SMPS and PFC IN BOTH HARD SWITCH AND

RESONANT TOPOLOGIES

■ MOTOR DRIVERS

Table 2: Order Codes

SALES TYPE MARKING PACKAGE PACKAGING

STGB10NC60KDT4 GB10NC60KD

STGF10NC60KD GF10NC60KD TO-220FP TUBE
STGP10NC60KD GP10NC60KD TO-220 TUBE

D²PAK

TAPE & REEL

Rev. 2

1/14July 2005

STGP10NC60KD - STGB10NC60KD - STGF10NC60KD

Table 3: Absolute Maximum ratings

Symbol Parameter Value Unit

I

V
V

V

CM

P

CES
ECR

I
I

TOT

I

Collector-Emitter Voltage (VGS = 0)
Emitter-Collector Voltage 20 V
Gate-Emitter Voltage ±20 V

GE

Collector Current (continuous) at TC = 25°C (#)

C

Collector Current (continuous) at TC = 100°C (#)

C

()

Collector Current (pulsed) 40 A
Diode RMS Forward Current at TC = 25°C

F

Total Dissipation at TC = 25°C
Derating Factor 0.48 0.20 W/°C

V

T

()Pulse wi dth limited by max. jun ct i on temperature.

ISO

stg

T

Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) -- 2500 V
Storage Temperature
Operating Junction Temperature

j

STGB10NC60KD
STGP10NC60KD

20 9 A
10 6 A

60 25 W

STGF10NC60KD

600 V

10 A

– 55 to 150 °C

Table 4: Thermal Data

Min. Typ. Max.

Rthj-case Thermal Resistance Junctio n-cas e TO-220

D2PAK

2.08 °C/W

TO-220FP 5.0 °C/W

Rthj-amb Thermal Resistance Junctio n-amb ient 62.5 °C/W

T

Maximum Lead Temperature for Soldering

L

300 °C

Purpose (1.6 mm from case, for 10 sec.)

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 5: Main Parameters

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

I

CES

I

GES

V

GE(th)

V

CE(sat)

(#) Calculated according to the iterative formula:

Collector-Emitter
Breakdown Voltage

Collector cut-off Current
(VGE = 0)

Gate-Emitter Leakage
Current (VCE = 0)

Gate Threshold Voltage
Collector-Emitter

Saturation Voltage

IC= 1 mA, VGE= 0 600 V

VCE= Max Rating,

10
TC= 25°C
VCE=Max Rating,

1

TC= 125°C
VGE= ±20V , VCE= 0 ±100 nA

VCE= VGE, IC= 250 µA
VGE= 15V, IC= 5A

VGE= 15V, IC= 5A,

5 7 V

2

2.5 V

1.8

Tc= 125°C

µA
mA

V

2/14

ICT

()

T

–

--------------------------------------------------------------------------------------------------

=

C

R

THJ C–

JMAXTC

V

CESAT MAX()TCIC

,()×

STGP10NC60KD - STGB10NC60KD - STGF10NC60KD

ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs(1)

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

t

scw

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge

Short Circuit Withstand Time VCE = 0.5 V

Table 7: Switching On

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

(di/dt)

t

d(on)

t

(di/dt)

r

r

Turn-on Delay Time
Current Rise Time
Turn-on Current Slope

on

Turn-on Delay Time
Current Rise Time
Turn-on Current Slope

on

VCE = 15 V, IC= 5 A 15 S
VCE = 25V, f = 1 MHz, VGE = 0 380

46

8.5

VCE = 390 V, IC = 5 A,
VGE = 15V,
(see Figure 20)

, Tj = 125°C

BR(CES)

10 µs

19

5
9

RG = 10 Ω, VGE = 12V

VCC = 390 V, IC = 5 A
RG= 10Ω, VGE= 15V, Tj= 25°C
(see Figure 18)

VCC = 390 V, IC = 5 A
RG= 10Ω, VGE= 15V, Tj=125°C
(see Figure 18)

17

6

655

16.5

6.5

575

pF
pF
pF

nC
nC
nC

ns
ns

A/µs

ns
ns

A/µs

Table 8: Switching Off

Symbol Parameter Test Conditions Min. Typ. Max. Unit

tr(V

)

td(

off

off

t

f

Off Voltage Rise Time
Turn-off Delay Time

)

Current Fall Time

Vcc = 390 V, IC = 5 A,
RGE = 10 Ω , VGE = 15 V
TJ = 25 °C

33
72
82

ns
ns
ns

(see Figure 18)

tr(V

)

td(

off

off

t

f

Off Voltage Rise Time
Turn-off Delay Time

)

Current Fall Time

Vcc = 390 V, IC = 5 A,
RGE = 10 Ω , VGE = 15 V
Tj = 125 °C

60
106
136

ns
ns
ns

(see Figure 18)

Table 9: Switching Energy

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Eon (2)

E

off

E

ts

Eon (2)

E

off

E

ts

(1) Pulsed: Pulse du ration = 300 µ s, duty cycl e 1.5%
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,

the co-pack diode i s us ed as extern al di ode. IGBTs & DIODE are at the same tem perature (25°C and 125°C)
(3)Turn-off los ses include al so the tail of t he collector current.

Turn-on Switching Losses
Turn-off Switching Losses

(3)

Total Switching Losses
Turn-on Switching Losses

Turn-off Switching Losses

(3)

Total Switching Losses

VCC = 390 V, IC = 75 A
RG= 10 Ω, VGE= 15V, Tj= 25°C
(see Figure 18)

VCC = 390 V, IC = 5 A
RG= 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 18)

55
85

140

87
162
249

µJ
µJ
µJ

µJ
µJ
µJ

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STGP10NC60KD - STGB10NC60KD - STGF10NC60KD

Table 10: Collector-Emitter Diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

f

t

rr

Q

rr

I

rrm

t

rr

Q

rr

I

rrm

Forward On-Voltage If = 2.5 A

If = 2.5 A, Tj = 125 °C

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

If = 5 A ,VR = 30 V,
Tj = 25°C, di/dt = 100 A/μs
(see Figure 6)

If = 5 A ,VR = 30 V,
Tj =125°C, di/dt = 100 A/μs
(see Figure 6)

1.6

1.3

23.5

16.5

1.4
39

39

2

2.1

V
V

ns
nC

A

ns
nC

A

4/14

STGP10NC60KD - STGB10NC60KD - STGF10NC60KD

Figure 3: Output Characteristics

Figure 4: Transconductance

Figure 6: Transfer Characteristics

Figure 7: Collector-Emitter On Voltage vs Tem­perature

Figure 5: Collector-Emitter On Voltage vs Col­lector Current

Figure 8: Normalized Gate Threshold vs Tem­perature

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STGP10NC60KD - STGB10NC60KD - STGF10NC60KD

Figure 9: Normalized Breakdown Voltage vs
Temperature

Figure 10: Capacitance Variations

Figure 12: Gate Charge vs G ate-Emitter Volt­age

Figure 13: Total Switching Lo sses vs Temp er­ature

Figure 11: Total Switching Losses vs Gate Re­sistance

6/14

Figure 14: Total Switching Losses vs Collector
Current

STGP10NC60KD - STGB10NC60KD - STGF10NC60KD

Figure 15: Turn-Off S OA

Figure 16: Thermal Impedance

Figure 17: Emitter-Collector Diode
Characteristics

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STGP10NC60KD - STGB10NC60KD - STGF10NC60KD

Figure 18: Test Circuit for Inductive Load
Swit c hing

Figure 19: Switching Waveforms

Figure 20: Gate Charge Test Circuit

Figure 21: Diode Recovery Times Waveform

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STGP10NC60KD - STGB10NC60KD - STGF10NC60KD

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154

L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

9/14

STGP10NC60KD - STGB10NC60KD - STGF10NC60KD

D2PAK MECHANICAL DATA

TO-247 MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

M 2.4 3.2 0.094 0.126

R0.4 0.015
V2 0º 4º

MIN. TY P MAX. MIN. TYP. MAX.

mm. inch

10/14

3

1

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT

STGP10NC60KD - STGB10NC60KD - STGF10NC60KD

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795

G 24.4 26.4 0.960 1.039

N 100 3.937
T 30.4 1.1 97

mm inch

MIN. MAX. MIN. MAX.

T APE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0. 25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

11/14

STGP10NC60KD - STGB10NC60KD - STGF10NC60KD

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

F1

F

12/14

G1

H

F2

123

L4

L2

L5

G

STGP10NC60KD - STGB10NC60KD - STGF10NC60KD

Figure 22: Revision History

Date Revision Description of Change s

14-Jun-2005 1 New release

19-Jul-2005 2 Complete version

13/14

STGP10NC60KD - STGB10NC60KD - STGF10NC60KD

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s

o

d

b

t

t

t

a

nformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence

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