Datasheet STGE200NB60S Datasheet (SGS Thomson Microelectronics)

STGE200NB60S

N-CHANNEL 150A - 600V -ISOTOP

PowerMESH™ IGBT

TYPE

V

CES

STGE200NB60S 600 V 1.2 V

■ HIGH INPUTIMPEDANCE(VOLTAGE DRIVEN)

■ LOW ON-VOLTAGE DROP (V

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

V

CE(sat)

(typ.)

1.3 V

cesat

I

C

150 A
200 A

)

T

C

100°C

25°C

DESCRIPTION

Using the latest h igh voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH

™

IGBTs, with outstanding
performances. The suffix “S” identifies a family
optimized to achieve very low

V

CE(sat)

(@ max

frequency of 1KHz).

APPLICATIONS

■ LOW FREQUENCY M OTOR CONTROLS

■ ALUMINUM WELDING EQUIPMENT

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CES

V

GE

I

C

I

C

ICM()

P

TOT

T

stg

T

j

() PULSE WIDTH LIMITED BY SAFE OPERATING AREA

Collector-Emitter Voltage (VGS=0)

600 V
Gate-Emitter Voltage ±20 V
Collector Current (continuous) at TC=25°C
Collector Current (continuous) at TC=100°C

200 A

150 A
Collector Current (pulsed) 400 A
Total Dissipation at TC= 25°C

600 W
Derating Factor 4.8 W/°C
Storage Temperature – 65 to 150 °C
Max. Operating Junction Temperature 150 °C

1/9June 2003

STGE200NB60S

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 0.208 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS O THERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

Collector-Emitter Breakdown

IC= 250 µA, VGE= 0 600 V

Voltage

I

CES

I

GES

Collector cut-off

=0)

(V

GE

Gate-Emitter Leakage
Current (V

CE

=0)

V

= Max Rating, TC=25°C

CE

= Max Rating, TC= 125 °C

V

CE

V

=±20V,VCE= 0 ±100 nA

GE

500 µA

5mA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

V

CE(sat)

Gate Threshold Voltage
Collector-Emitter Saturation

Voltage

V

CE=VGE,IC

VGE=15V,IC= 100 A

=15V,IC=150 A, Tj =100°C

V

GE

= 250µA

35V

1.2 1.6 V

1.2 V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

g

fs

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

I

CL

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge

Latching Current V

=15V,IC=100A

CE

=25V,f=1MHz,VGE=0

V

CE

= 480V, IC= 100 A,

V

CE

V

=15V

GE

= 480 V

clamp

Tj = 125°C , R

=10Ω

G

80 S

15600

1100

95

560

70

170

300 A

pF
pF
pF

nC
nC
nC

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

(di/dt)

Eon

Turn-on Delay Time

r

Rise Time
Turn-on Current Slope

on

Turn-on Switching Losses

=480V,IC= 100 A

V

CC

RG=2Ω,VGE=15V
VCC= 480 V,IC= 100 A RG=2Ω

VGE= 15 V,Tj = 125°C

64

112

1800

12

ELECTRICAL CHARACTERISTICS (CONTINUED)

2/9

µs
µs

A/µs

mJ

STGE200NB60S

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

c

tr(V

off

t

d(off

t

f

E

(**)

off

E

ts

t

c

t

r(Voff

t

d(off

t

f

E

(**)

off

E

ts

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by max. junction temperature.

(**)Losses include Also the Tail (Jedec Standardization)

Cross-over Time

)

Off Voltage Rise Time 1.7 µs

)

Delay Time 2.4 µs
Fall Time 1.23 µs
Turn-off Switching Loss 59 mJ
Total Switching Loss 71 mJ
Cross-over Time

)

Off Voltage Rise Time 2.6 µs

)

Delay Time 2.8 µs
Fall Time 1.8 µs
Turn-off Switching Loss 92 mJ
Total Switching Loss 105 mJ

= 480 V, IC= 100 A,

cc

RGE=2Ω,VGE=15V

V

= 480 V, IC= 100 A,

cc

R

=2Ω,VGE=15V

GE

Tj = 125 °C

2.98 µs

4.52 µs

3/9

STGE200NB60S

Thermal Impedance

Output Characteristics

Switching Off Safe Operating Area

Transfer Characteristics

Normalized Gate Threshold Voltage vs Temp. Transconductance

4/9

STGE200NB60S

Gate-Charge vs Gate-Emitter VoltageCollector-Emitter On Voltage vs Temperature

Capacitance Variations Normalized Break-dow n Voltage vs Temp.

Total Switching losses vs TemperatureTotal Switching losses vs Gate Res istance

5/9

STGE200NB60S

Collector-Emitter on Voltage vs CurrentTotal Switching l osses vs Ic

6/9

STGE200NB60S

Fig. 2: Test Circuit For Induct ive Load SwitchingFig. 1: Gate Charge test Circuit

7/9

STGE200NB60S

ISOTOP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 11.8 12.2 0.466 0.480
B 8.9 9.1 0.350 0.358
C 1.95 2.05 0.076 0.080
D 0.75 0.85 0.029 0.033
E 12.6 12.8 0.496 0.503
F 25.15 25.5 0.990 1.003
G 31.5 31.7 1.240 1.248
H4 0.157

J 4.1 4.3 0.161 0.169
K 14.9 15.1 0.586 0.594
L 30.1 30.3 1.185 1.193

M 37.8 38.2 1.488 1.503
N4 0.157
O 7.8 8.2 0.307 0.322

mm inch

G

A

8/9

N

O

B

D

E

F

H

J

C

K
L

M

STGE200NB60S

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consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

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