Datasheet STGP7NC60H, STGD7NC60H Datasheet (ST)

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STGP7NC60H - STGD7NC60H
N-CHANNEL 14A - 600V TO-220/DPAK
Very Fast PowerMESH™ IGBT
Table 1: Ge neral Features
TYPE V
STGP7NC60H STGD7NC60HT4
LOWER ON-VOLTAGE DROP (V
LOWER C
HIGH FREQUENCY OPERATION UP TO 70
RES/CIES
CESVCE(sat)
600 V 600 V
RATIO
(Max)
@25°C < 2.5 V
< 2.5 V
cesat
I
C
@100°C
14 A 14 A
)
KHz
NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRIBUTION
DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Pow­erMESH
IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) man­taining a low voltage drop.
APPLICATIONS
HIGH FREQUENCY INVERTERS
SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
MOTOR DRIVERS
Figure 1: Package
3
2
1
TO-220
DPAK
Weight for TO-220: 1.92gr ± 0.01 Weight for DPAK: 0.38gr ± 0.01
Figure 2: Internal Schematic Diagram
3
1
Table 2: Order Code
PART NUMBER MARKING PACKAGE PACKAGING
STGP7NC60H GP7NC60H TO-220 TUBE
STGD7NC60HT4 D7NC60H DPAK TAPE & REEL
Rev. 2
1/12June 2005
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STGP7NC60H - STGD7NC 60H
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
TO-220 DPAK
V
CES
V
ECR
V
GE
I
C
I
C
I
()
CM
P
TOT
T
stg
T
j
() Pulse width limite d by max. juncti on t em perature.
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case TO-220 1.56
Rthj-amb Thermal Resistance Junction-ambient TO-220 62.5
T
L
Collector-Emitter Voltage (VGS = 0)
600 V Emitter-Collector Voltage 20 V Gate-Emitter Voltage ±20 V Collector Current (continuous) at TC = 25°C (#) Collector Current (continuous) at TC = 100°C (#)
25 A
14 A Collector Current (pulsed) 50 A Total Dissipation at TC = 25°C
80 70 W Derating Factor 0.64 0.56 W/°C Storage Temperature Operating Junction Temperature
– 55 to 150 °C
Min. Typ. Max.
DPAK 1.78
DPAK 100
Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.)
TO-220 300 DPAK 275
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: Main Parameters
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Breakdown Voltage
I
CES
I
GES
V
GE(th)
V
CE(sat)
Collector cut-off Current
= 0)
(V
GE
Gate-Emitter Leakage Current (V
CE
= 0) Gate Threshold Voltage Collector-Emitter
Saturation Voltage
(#) Calculated according to the iterative formula:
T
ICTC()
--------------------------------------------------------------------------------------------------
=
R
THJ C
JMAXTC
V
CESAT MAX()TCIC
IC = 1 mA, VGE = 0 600 V
V
= Max Rating, TC= 25 °C
CE
= Max Rating, TC= 125 °C
V
CE
V
= ± 20V , VCE = 0 ±100 nA
GE
V
= VGE, IC = 250 µA
CE
VGE = 15V, IC = 7 A VGE = 15V, IC = 7 A, Tc= 125°C
,()×
3.75 5.75 V
1.85
1.7
10
1
2.5 V
µA
mA
V
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STGP7NC60H - STGD 7NC60H
ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1)
g
fs
C
ies
C
oes
C
res
Forward Transconductance Input Capacitance Output Capacitance 81 pF Reverse Transfer
Capacitance
Q
g
Q
ge
Q
gc
I
CL
Total Gate Charge Gate-Emitter Charge Gate-Collector Charge
Turn-Off SOA Minimum Current
(1) Pulsed: Pulse durat ion= 300 µs, duty cycle 1.5%
Table 7: Switching On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
(di/dt)
t
d(on)
t
(di/dt)
r
r
Turn-on Delay Time Current Rise Time Turn-on Current Slope
on
Turn-on Delay Time Current Rise Time Turn-on Current Slope
on
VCE = 15 V , IC= 7 A 4.30 S V
= 25 V, f= 1 MHz, VGE = 0
CE
720 pF
17 pF
= 390 V, IC = 7 A,
V
CE
VGE = 15 V (see Figure 21)
V
= 480 V , Tj = 150°C
clamp
R
= 10 Ω, VGE = 15 V
G
VCC = 390 V, IC = 7 A R
=10 Ω, VGE= 15V, Tj= 25°C
G
(see Figure 18) VCC = 390 V, IC = 7 A
RG=10 Ω, VGE= 15V , Tj= 125°C (see Figure 19)
50 A
35
7
16
18.5
8.5
1060
18.5 7
1000
48 nC
nC nC
ns ns
A/µs
ns ns
A/µs
Table 8: Switching Off
Symbol Paramet er Test Conditions Min. Typ. Max. Unit
t
r(Voff
t
d(off
t
r(Voff
t
d(off
)
Off Voltage Rise Time
)
Turn-off Delay Time 72 ns
t
f
t
f
Current Fall Time 60 ns
)
Off Voltage Rise Time
)
Turn-off Delay Time 116 ns Current Fall Time 105 ns
Vcc = 390 V, IC = 7 A, R
= 10 Ω , VGE = 15 V
G
TJ = 25 °C (see Figure 19)
Vcc = 390 V, IC = 7 A, R
= 10 Ω , VGE = 15 V
G
Tj = 125 °C (see Figure 19)
27 ns
56 ns
Table 9: Switching Energy
Symbol Parameter Test Conditions Min. Typ. Max Unit Eon (2)
E
off
E
ts
Eon (2)
E
off
E
ts
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external di ode. IGBTs & DIODE are at the same temperat ure (25°C and 125 °C) (3)Turn-off losse s include also the tail of the coll ector current .
Turn-on Switching Losses Turn-off Switching Loss
(3)
Total Switching Loss Turn-on Switching Losses
Turn-off Switching Loss
(3)
Total Switching Loss
= 390 V, IC = 7 A
V
CC
R
= 10 Ω, VGE= 15V, Tj= 25°C
G
(see Figure 19)
= 390 V, IC = 7 A
V
CC
RG= 10 Ω, VGE= 15V, Tj= 125°C (see Figure 19)
95 115 210
140 215 355
125 150 275
µJ µJ µJ
µJ µJ µJ
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STGP7NC60H - STGD7NC 60H
Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Tem­perature
Figure 5: Collector-Emitter On Voltage vs Col­lector Curr e nt
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Figure 8: Normalized Gate Threshold vs Tem­perature
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STGP7NC60H - STGD 7NC60H
Figure 9: Normalized Breakdown Voltage vs Temperature
Figure 10: Capacitance Variations
Figure 12: Gate Charge vs G ate-Emitter Volt­age
Figure 13: Total Switching Lo sses vs Temp er­ature
Figure 11: Total Switching Losses vs Gate Re­sistance
Figure 14: Total Switching Losses vs Collector Current
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STGP7NC60H - STGD7NC 60H
Figure 15: Thermal Impedan ce for TO-220
Figure 16: Thermal Impedance for DPAK
Figure 17: Turn-Of f S OA
Figure 18: Ic v s Fr equenc y
For a fast IGBT suitable for high frequency appli­cations, the typical collector current vs. maximum operating frequency curve is reported. That fre­quency is defined as follows:
f
= (PD - PC) / (EON + E
MAX
OFF
)
1) The maximum power dissipation is limited by maximum junction to case thermal resistance:
P
= T / R
D
THJ-C
considering T = TJ - TC = 125 °C- 75 °C = 50°C
2) The conduction losses are: P
= IC * V
C
with 50% of duty cycle, V
CE(SAT)
* δ typical value
CESAT
@125°C.
3) Power dissipation during ON & OFF commuta­tions is due to the switching frequency:
P
= (EON + E
SW
OFF
) * freq.
4) Typical values @ 125°C for switching losse s are used (test conditions: V
= 3.3 Ohm). Fu rthermore, diode recovery en-
R
G
ergy is included in the E tail of the collector current is included in the E
= 390V, VGE = 15V,
CE
(see note 2), while the
ON
OFF
measurements (see note 3).
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STGP7NC60H - STGD 7NC60H
Figure 19: Test Circuit for Inductive Load Swit c hing
Figure 20: Switching Waveforms
Figure 21: Gate Charge Test Circuit
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STGP7NC60H - STGD7NC 60H
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154
L20 16.40 0.645 L30 28.90 1.137
øP
Q 2.65 2.95 0.104 0.116
MIN. TYP MAX. MIN. TYP. MAX.
3.75 3.85 0.147 0.151
mm. inch
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STGP7NC60H - STGD 7NC60H
TO-252 (DPAK) MECHANICAL DATA
DIM.
A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0
MIN. TYP. MAX. MIN. TYP. MAX.
o
mm inch
o
8
o
0
o
0
P032P_B
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STGP7NC60H - STGD7NC 60H
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
2500 2500
10/12
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Table 10: Revision History
Date Revision D escrip tion of Change s
20-Aug-2004 1 New datasheet 09-Jun-2005 2 Modified title
STGP7NC60H - STGD 7NC60H
11/12
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STGP7NC60H - STGD7NC 60H
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