Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the PowerMESH
™
IGBTs, with outstanding performances.
The suffix "H" identifies a family optimized for high
frequency applications in order to achieve very
high switching performances (reduced tfall) mantaining a low voltage drop.
APPLICATIONS
■ HIGH FREQUENCY INVERTERS
■ SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
■ MOTOR DRIVERS
Figure 1: Package
3
2
1
TO-220
DPAK
Weight for TO-220: 1.92gr ± 0.01
Weight for DPAK: 0.38gr ± 0.01
Figure 2: Internal Schematic Diagram
3
1
Table 2: Order Code
PART NUMBERMARKINGPACKAGEPACKAGING
STGP7NC60HGP7NC60HTO-220TUBE
STGD7NC60HT4D7NC60HDPAKTAPE & REEL
Rev. 2
1/12June 2005
Page 2
STGP7NC60H - STGD7NC 60H
Table 3: Absolute Maximum ratings
SymbolParameterValueUnit
TO-220DPAK
V
CES
V
ECR
V
GE
I
C
I
C
I
()
CM
P
TOT
T
stg
T
j
() Pulse width limite d by max. juncti on t em perature.
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external di ode. IGBTs & DIODE are at the same temperat ure (25°C and 125 °C)
(3)Turn-off losse s include also the tail of the coll ector current .
Turn-on Switching Losses
Turn-off Switching Loss
(3)
Total Switching Loss
Turn-on Switching Losses
Turn-off Switching Loss
(3)
Total Switching Loss
= 390 V, IC = 7 A
V
CC
R
= 10 Ω, VGE= 15V, Tj= 25°C
G
(see Figure 19)
= 390 V, IC = 7 A
V
CC
RG= 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 19)
95
115
210
140
215
355
125
150
275
µJ
µJ
µJ
µJ
µJ
µJ
3/12
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STGP7NC60H - STGD7NC 60H
Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Temperature
Figure 5: Collector-Emitter On Voltage vs Collector Curr e nt
4/12
Figure 8: Normalized Gate Threshold vs Temperature
Page 5
STGP7NC60H - STGD 7NC60H
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 10: Capacitance Variations
Figure 12: Gate Charge vs G ate-Emitter Voltage
Figure 13: Total Switching Lo sses vs Temp erature
Figure 11: Total Switching Losses vs Gate Resistance
Figure 14: Total Switching Losses vs Collector
Current
5/12
Page 6
STGP7NC60H - STGD7NC 60H
Figure 15: Thermal Impedan ce for TO-220
Figure 16: Thermal Impedance for DPAK
Figure 17: Turn-Of f S OA
Figure 18: Ic v s Fr equenc y
For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum
operating frequency curve is reported. That frequency is defined as follows:
f
= (PD - PC) / (EON + E
MAX
OFF
)
1) The maximum power dissipation is limited by
maximum junction to case thermal resistance:
P
= ∆T / R
D
THJ-C
considering ∆T = TJ - TC = 125 °C- 75 °C = 50°C
2) The conduction losses are:
P
= IC * V
C
with 50% of duty cycle, V
CE(SAT)
* δ
typical value
CESAT
@125°C.
3) Power dissipation during ON & OFF commutations is due to the switching frequency:
P
= (EON + E
SW
OFF
) * freq.
4) Typical values @ 125°C for switching losse s are
used (test conditions: V
= 3.3 Ohm). Fu rthermore, diode recovery en-
R
G
ergy is included in the E
tail of the collector current is included in the E
= 390V, VGE = 15V,
CE
(see note 2), while the
ON
OFF
measurements (see note 3).
6/12
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STGP7NC60H - STGD 7NC60H
Figure 19: Test Circuit for Inductive Load
Swit c hing
20-Aug-20041New datasheet
09-Jun-20052Modified title
STGP7NC60H - STGD 7NC60H
11/12
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STGP7NC60H - STGD7NC 60H
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