Datasheet STGD7NB60ST4 Datasheet (SGS Thomson Microelectronics)

®

STGD7NB60S

N-CHANNEL 7A - 600V DPAK

Power MESH IGBT

TYPE V

STGD7NB60S 600 V < 1.6 V 7 A

■

HIGH INPUT IMPEDANCE

CES

V

CE(sat)

I

C

(VOLTAGE DRIVEN)

■

VERY LOW ON-VOLTAGE DROP (V

■

HIGH CURRENT CAPABILITY

■

OFF LOSSES INCLUDE TAIL CURRENT

■

SURFACE-MOU NTING DPAK (TO-252)

cesat

)

POWER PACKAGE IN TA P E & R E EL
(SUFFIX "T4")

DESCRIPTION

Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix "S" identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).

APPLICATIONS

■

LIGHT DIMMER

■

STATIC RELAYS

■

MOTOR CONTROL

3

1

DPAK

TO-252

(Suffix "T4")

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V
V

V

I

CM

P

T

(•) Pulse width limited by safe operating area

November 1999

Collector-Emitter Voltage (VGS = 0) 600 V

CES

Reverse Battery Protection 20 V

ECR

Gate-Emitter Voltage ± 20 V

GE

I

Collector Current (continuous) at Tc = 25 oC15A

C

I

Collector Current (continuous) at Tc = 100 oC7A

C

(•) Collector Current (pulsed) 60 A

Total Dissipation at Tc = 25 oC55W

tot

Derating Factor 0.44 W/
Storage Temperature -65 to 150

stg

T

Max. Operating Junction Temperature 150

j

o

C

o

C

o

C

1/8

STGD7NB60S

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ

2.27
100

1.5

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS

= 25 oC unless otherwise specified)

(T

j

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

Collector-Emitter

IC = 250 µA V

= 0 600 V

GE

Breakdown Voltage

V

BR(ECR)

Emitter-Collector

IC = 1 mA V

= 0 20 V

GE

Breakdown Voltage

I

I

CES

GES

Collector cut-off
(V

= 0)

GE

Gate-Emitter Leakage
Current (V

CE

= 0)

= Max Rating Tj = 25 oC

V

CE

V

= Max Rating Tj = 125 oC

CE

= ± 20 V VCE = 0 ± 100 nA

V

GE

10

100

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

Gate Threshold

V

= VGE IC = 250 µA 2.5 5 V

CE

Voltage

V

CE(SAT)

Collector-Emitter
Saturation Voltage

VGE = 15 V IC = 3 A
V

= 15 V IC = 7 A

GE

V

= 15 V IC = 7 A Tj = 125 oC

GE

1

1.2

1.1

1.4

1.6

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

C

C

C

Q
I

CL

Forward

fs

VCE =25 V IC = 7 A 4 S

Transconductance
Input Capacitance

ies

Output Capacitance

oes

Reverse Transfer

res

V

= 25 V f = 1 MHz V

CE

= 0 610

GE

65
12

Capacitance
Gate Charge VCE = 400 V IC = 7 A VGE = 15 V 33 nC

G

Latching Current V

= 480 V RG=1kΩ

clamp

T

= 150 oC

j

15 A

780

85
15

µA
µA

V
V
V

pF
pF
pF

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

0.7

0.46

8

0.4

(di/dt)

2/8

t

d(on)

E

Delay Time
Rise Time

t

r

Turn-on Current Slope

on

Turn-on

on

Switching Losses

VCC = 480 V IC = 7 A
V

= 15 V RG = 1 KΩ

GE

V

= 480 V IC = 7 A

CC

R

= 1 KΩ VGE = 15 V

G

T

= 125 oC

j

µs
µs

A/µs

mJ

STGD7NB60S

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

tr(v

E

off

t

tr(v

E

off

(•) Pulse width limited by safe operating area
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardi zat io n)

Cross-Over Time

c

Off Voltage Rise Time

)

off

Fall Time

t

f

Turn-off Switching Loss

(**)

Cross-Over Time

c

Off Voltage Rise Time

)

off

Fall Time

t

f

Turn-off Switching Loss

(**)

= 480 V IC = 7 A

CC

R

= 100 Ω VGE = 15 V

GE

V

= 480 V IC = 7 A

CC

R

= 100 Ω VGE = 15 V

GE

T

= 125 oC

j

2.2

1.2

1.2

3.5

3.8

1.2

1.9

5.3

µ
µ
µ

mJ

µ
µ
µ

mJ

s
s
s

s
s
s

Thermal Impedance

3/8

STGD7NB60S

Output Characteristics

Transconductance

Transfer Characteristics

Collector-Emitter On Voltage vs Temperature

Collector-Emitter On Voltage vs Collector Current

4/8

Gate Threshold vs Temperature

STGD7NB60S

Normalized Breakdown Voltage vs Temperature

Gate Charge vs Gate-Emitter Voltage

Capacitance Variations

Off Losses vs Gate Resistance

Off Losses vs Temperature

Off Losses vs Collector Current

5/8

STGD7NB60S

Switching Off Safe Operatin Area

Fig. 1: Gate Charge test Circuit

Fig. 3: Switching Waveforms

Fig. 2: Test Circuit For Inductive Load Switching

6/8

TO-252 (DPAK) MECHANICAL DATA

STGD7NB60S

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039

A

C2

L2

E

B2

==

H

DETAIL "A"

D

==

C

B

2

1 3

L4

A1

G

==

A2

DETAIL "A"

0068772-B

7/8

STGD7NB60S

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subject to chan ge w ithout notice. This publicatio n su persedes a nd r eplaces al l inf ormati on previ ously suppl ied. STMicroelect ron ics produ cts
are not auth ori zed f or use as critical components i n life sup port devices or systems witho ut express written approval of STMicroelectr o nics.

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