Datasheet STP80NF75L, STB80NF75L-1, STB80NF75L Datasheet (SGS Thomson Microelectronics)

STP80NF75L

STB80NF75L STB80NF75L-1

N-CHANNEL 75V - 0.008 Ω - 80A TO-220/D2PAK/I2PAK

STripFET™ II POWER MOSFET

TYPE

STP80NF75L
STB80NF75L
STB80NF75L-1

■ TYPICAL R

■ EXCEPTIONA L dv/d t CAPABILITY

■ 100% AVALANCHE TESTED

■ LOW THRESHOLD DRIVE

V

DSS

75 V
75 V
75 V

(on) = 0.008 Ω

DS

R

DS(on)

<0.01
<0.01
<0.01

I

D

80 A

Ω

80 A

Ω

80 A

Ω

DESCRIPTION

This Power MOSFET is the latest dev elo pment of

STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark­able manufacturing reproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SWITCHING SPEED

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ DC-DC & DC-AC CONVERTERS

■ SOLENOID AND RELAY DRIVERS

3

1

D2PAK

TO-263

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

2

PAK

I

TO-262

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

(

I

•)

D

I

D

(

I

••)

DM

P

tot

dv/dt

E

AS

T

stg

T

j

(•)Current Limited by Package

(

Pulse wi dth limited by safe operating ar ea.

••)

.

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

75 V
75 V

Gate- source Voltage ± 16 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

80 A

80 A
Drain Current (pulsed) 320 A
Total Dissipation at TC = 25°C

300 W

Derating Factor 2 W/°C

(1)

Peak Diode Recovery voltage slope 12 V/ns

(2)

Single Pulse Avalanche Energy 930 mJ
Storage Temperature
Max. Operating Junction Temperature

≤80A, di/dt ≤960A/ µ s , VDD ≤ V

(1) I

SD

(2) Starting Tj = 25 oC, ID = 40A, VDD= 40V

-55 to 175 °C

(BR)DSS

, Tj ≤ T

JMAX

1/11November 2001

STB80NF75L/-1/ STP80NF75L

THERMA L D ATA

Rthj-case

Rthj-amb

T

Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

l

Max
Max

Typ

0.5

62.5
300

°C/W
°C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

= 250 µA, VGS = 0

D

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

V

= ± 16V

GS

75 V

1

10

±100 nA

ON

V

(BR)DSS

I

DSS

I

GSS

(*)

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

= VGS I

DS

= 5 V ID = 40 A

V

GS

V

= 10 V ID = 40 A

GS

= 250 µA

D

1 1.6 2.5 V

0.01

0.008

0.013

0.010

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

V

= 25 V ID= 40 A

DS

= 25V, f = 1 MHz, VGS = 0

V

DS

50 S

5000

835
360

µA
µA

Ω
Ω

pF
pF
pF

2/11

STB80NF75L/-1/ STP80NF75L

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 37 V ID = 40 A

t

d(on)

Turn-on Delay Time

t

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 4.5 V

G

(Resistive Load, Figure 3)

Q

g

Q

gs

Q

gd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

= 60 V ID= 80 A VGS= 5V

V

DD

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 37V ID = 40 A

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 4.5 V

(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cycle 1. 5 %.

(

•)Pulse width limited by safe operating ar ea.

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

I

= 80A VGS = 0

SD

= 80 A di/dt = 100A/µs

I

SD

V

= 25 V Tj = 150°C

DD

(see test circuit, Figure 5)

30

145

110

20
55

130

90

105
340

9

140 nC

80

320

1.5 V

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

Thermal ImpedanceSaf e Operating Ar ea

3/11

STB80NF75L/-1/ STP80NF75L

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

4/11

STB80NF75L/-1/ STP80NF75L

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature.

. .

5/11

STB80NF75L/-1/ STP80NF75L

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive

Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/11

D2PAK MECHANICAL DATA

STB80NF75L/-1/ STP80NF75L

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.028 0.037
B2 1.14 1.7 0.045 0.067

C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.394 0.409
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.591 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.069

M 2.4 3.2 0.094 0.126

R 0.4 0.016

V2 0° 8° 0° 8°

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

0.106

7/11

STB80NF75L/-1/ STP80NF75L

E

TO-220 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

A

C

D

D1

L2

F1

L5

Dia.

G1

F

F2

L9

G

H2

L7

L6

L4

P011C

8/11

STB80NF75L/-1/ STP80NF75L

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

A

A1

C2

B2

B

e

E

L1

L2

D

L

P011P5/E

9/11

STB80NF75L/-1/ STP80NF75L

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795

G 24.4 26.4 0.960 1.039

N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082

R50 1.574

T0.25 0.35 .0.0098 0.0137

W 23.7 24.3 0.933 0.956

mm inch

MIN. MAX. MIN. MAX.

* on sales type

10/11

BASE QTY BULK QTY

1000 1000

STB80NF75L/-1/ STP80NF75L

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by implic ation or otherwise under any patent or patent right s of STMicroelectronics. Specifications menti oned in this p ublication are subje ct
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11/11