The ST1S40 is an internally compensated 850
kHz fixed-frequency PWM synchronous stepdown regulator. ST1S40 operates from 4.0 V to
18 V input, while it regulates an output voltage as
low as 0.8 V and up to V
The ST1S40 integrates a 95 mΩ high side switch
and 69 mΩ synchronous rectifier allowing very
high efficiency with very low output voltages.
The peak current mode control with internal
compensation delivers a very compact solution
with a minimum component count.
The ST1S40 is available in VFQFPN 4 mm x 4
mm 8 lead package, HSOP-8 and standard SO-8.
Enable input. With EN higher than 1.2 V the device in ON and with EN lower than
0.4 V the device is OFF (ST1S40Ixx).
Feedback input. Connecting the output voltage directly to this pin the output
voltage is regulated at 0.8 V. To have higher regulated voltages an external
resistor divider is required from Vout to the FB pin.
Table 1.Pin description
VFQFPN
and HSOP8
13
24EN
35FB
46AGND Ground
5-NCIt can be connected to ground
VINA
EN
FB
GND
1
2
9
3
4
PGND
8
SW
7
VINSW
6
NC
5
1
SWVINSW
PGND
VINA
EN
45
HSOP8SO8-BW
8
GND
AGND
FB
68VINSW Power input voltage
71SWRegulator output switching pin
82PGND Power ground
-7Ground
9-ePadExposed pad mandatory connected to ground
Doc ID 17928 Rev 43/30
Page 4
Maximum ratingsST1S40
2 Maximum ratings
Table 2.Absolute maximum ratings
SymbolParameterValueUnit
V
V
V
V
V
P
T
T
Power input voltage-0.3 to 20
INSW
Input voltage-0.3 to 20
INA
Enable voltage-0.3 to V
EN
Output switching voltage-1 to V
SW
Feedback voltage-0.3 to 2.5
FB
I
FB current-1 to +1mA
FB
Power dissipation at TA < 60 °C
TOT
Operating junction temperature range-40 to 150°C
OP
Storage temperature range-55 to 150°C
stg
3 Thermal data
Table 3.Thermal data
SymbolParameterValueUnit
R
Maximum thermal resistance junction-ambient
thJA
2.25 (HSOP8/DFN4x4);
VFQFPN40
(1)
SO8-BW55
INA
IN
1.6 SO8-BW
V
W
°C/WHSOP840
1. Package mounted on demonstration board.
4/30Doc ID 17928 Rev 4
Page 5
ST1S40Electrical characteristics
4 Electrical characteristics
TJ=25 °C, VCC=12 V, unless otherwise specified.
Table 4.Electrical characteristics
Val ues
SymbolParameterTest condition
Min.Typ.Max.
Unit
Operating input voltage
IN
range
Tur n-o n VCC threshold
Threshold hysteresis
High side switch ON
-P
resistance
Low side switch ON
-N
resistance
Maximum limiting current
V
R
R
V
V
INON
INHYS
DSON
DSON
I
LIM
Oscillator
D
F
SW
MAX
Switching frequency0.70.851MHz
Maximum duty cycle
Dynamic characteristics
%V
ΔI
%V
V
ΔV
FB
OUT
OUT
OUT
Feedback voltage
/
Reference load regulation Isw=10 mA to I
/
Reference line regulation VIN= 4.0 V to 18 V
IN
DC characteristics
(1)
(1)
(1)
ISW=750 mA
418
2.9
V
0.250
95
mΩ
ISW=750 mA69mΩ
(2)
(2)
4.06.0A
100%
0.7840.80.816
(1)
LIM
0.7760.80.824
(2)
(2)
0.5%
0.4%
V
I
Q
I
QST-BY
Quiescent current
Total standby quiescent
current
Duty cycle=0, no load
=1.2 V
V
FB
OFF215μA
IFBFB bias current50
Enable
Device ON level1.2
V
EN
I
EN
EN threshold voltage
Device OFF level0.4
EN current2μA
Doc ID 17928 Rev 45/30
1.52.5mA
V
Page 6
Electrical characteristicsST1S40
Table 4.Electrical characteristics (continued)
Val ues
SymbolParameterTest condition
Min.Typ.Max.
Soft start
Unit
T
SS
Soft-start duration1ms
Protection
Thermal shutdown150
T
SHDN
1. Specification referred to TJ from -40 to +125 °C. Specifications in the -40 to +125 °C temperature range are
assured by design, characterization and statistical correlation.
2. Guaranteed by design.
Hysteresis 15
°C
6/30Doc ID 17928 Rev 4
Page 7
ST1S40Functional description
OSC
E/A
DRIVER
DRIVER
DMD
OTP
MOSFET
CONTROL
LOGIC
REGULATOR
SHUT-DOWN
I_SENSE
COMP
COMP
OCP
REF
0.8V
SOFTSTART
Vsum
Vc
OCP
UVLO
Vdrv_p
Vdrv_n
I2V
R
SENSE
VINAVINSW
SW
GNDPGNDAENFB
5 Functional description
The ST1S40 is based on a “peak current mode”, constant frequency control. The output
voltage V
providing an error signal that, compared to the output of the current sense amplifier, controls
the ON and OFF time of the power switch.
The main internal blocks are shown in the block diagram in Figure 3. They are:
●A fully integrated oscillator that provides the internal clock and the ramp for the slope
compensation avoiding sub-harmonic instability
●The soft-start circuitry to limit inrush current during the startup phase
●The transconductance error amplifier with integrated compensation network
●The pulse width modulator and the relative logic circuitry necessary to drive the internal
power switches
●The drivers for embedded P-channel and N-channel Power MOSFET switches
●The high side current sensing block
●The low side current sense to implement diode emulation
●A voltage monitor circuitry (UVLO) that checks the input and internal voltages
●A thermal shutdown block, to prevent thermal run-away.
is sensed by the feedback pin (FB) compared to an internal reference (0.8 V)
OUT
Figure 3.Block diagram
5.1 Internal soft-start
The soft-start is essential to assure correct and safe startup of the step-down converter. It
avoids inrush current surge and causes the output voltage to increase monothonically.
Doc ID 17928 Rev 47/30
Page 8
Functional descriptionST1S40
L
Cout
Cur rent s ense
Logic
And
Driver
Slope
Com pensati on
PW M comparator
Error Amp
Rc
Cc
R1
R2
0.8 V
Hi gh side
Swi tch
Low s i de
Swi tch
GCO(s)
G
DIV
(s)
G
EA
(s)
VIN
V
C
V
OUT
V
FB
The soft-start is performed by ramping the non-inverting input (V
from 0 V to 0.8 V in around 1 ms.
5.2 Error amplifier and control loop stability
The error amplifier compares the FB pin voltage with the internal 0.8 V reference and it
provides the error signal to be compared with the output of the current sense circuitry, that is
the high side Power MOSFET current. Comparing the output of the error amplifier and the
peak inductor current implements the peak current mode control loop.
The error amplifier is a transconductance amplifier (OTA). The uncompensated
characteristics are listed inTable 5.
Table 5.Error amplifier characteristics
DC Gain95 dB
Gm251 µA/V
Ro240 MΩ
The ST1S40 embeds the compensation network that assures the stability of the loop in the
whole operating range. All the tools needed to check the loop stability are shown below.
Figure 4. shows the simple small signal model for the peak current mode control loop.
Figure 4.Block diagram of the loop for the small signal analysis
The resistor to adjust the output voltage gives the term from output voltage to the FB pin.
G
(s) is:
DIV
The transfer function from FB to Vcc (output of E/A) introduces the singularities (poles and
zeroes) to stabilize the loop. Figure 5 shows the small signal model of the error amplifier
with the internal compensation network.
Figure 5.Small signal model for the error amplifier
R
and CC introduce a pole and a zero in the open loop gain. CP does not significantly affect
C
system stability and can be neglected.
So G
(s) results:
EA
Equation 8
where G
= Gm · R
EA
o
The poles of this transfer function are (if Cc >> C0+CP):
considered as negligible. The error amplifier output resistance is 240 M
singularities are:
Equation 12
so by closing the loop, the loop gain G
LOOP
(s) is:
Equation 13
Example:
VIN=12 V, VOUT=1.2 V, Iomax=3 A, L=1.5 µH, Cout=47 µF (MLCC), R1=10 k
R2=20 k
Ω
(see Section 6.2 and Section 6.3 for inductor and output capacitor selection
guidelines).
The module and phase Bode plot are reported in Figure 6.
The bandwidth is 100 kHz and the phase margin is 45 degrees.
Ω so the relevant
Ω
,
Doc ID 17928 Rev 411/30
Page 12
Functional descriptionST1S40
Figure 6.Module and phase Bode plot
5.3 Overcurrent protection
The ST1S40 implements the pulse-by-pulse overcurrent protection. The peak current is
sensed through the high side Power MOSFET and when it exceeds the first overcurrent
threshold (OCP1) the high side is immediately turned off and the low side conducts the
inductor current for the rest of the clock period.
During overload condition, since the duty cycle is not set by the control loop but is limited by
the overcurrent threshold, the output voltage drops out of regulation. If the feedback falls
below 0.3 V the switching frequency is reduced to one fourth and the current limit threshold
is folded back to around 2 A. Thanks to the current and frequency fold back the stress on the
device and on the external power components is reduced in case of severe overload or
dead-short to ground of the output.
The current fold back is disabled during the startup, in order to allow the Vout to rise up
properly in case of the big output capacitor requiring high extra current to be charged.
12/30Doc ID 17928 Rev 4
Page 13
ST1S40Functional description
An additional mechanism is protecting the device in case of short-circuit on the output and
high input voltage. A further threshold (OCP2, 1A higher than OCP1) is compared to the
inductor current. If the inductor current exceeds OCP2, the device stops switching and
restarts with a soft-start cycle.
5.4 Enable function
The enable feature allows the device to be put into standby mode. With the EN pin lower
than 0.4 V, the device is disabled and the power consumption is reduced to less than 15 µA.
With the EN pin higher than 1.2 V, the device is enabled. If the EN pin is left floating, an
internal pull-down ensures that the voltage at the pin reaches the inhibit threshold and the
device is disabled. The pin is also V
compatible.
IN
5.5 Hysteretic thermal shutdown
The thermal shutdown block generates a signal that turns off the power stage if the junction
temperature goes above 150 °C. Once the junction temperature goes back to about 130 °C,
the device restarts in normal operation.
Doc ID 17928 Rev 413/30
Page 14
Application informationST1S40
I
RMSIO
D
2D
2
⋅
η
-------------- -–
D
2
η
2
------ -+⋅=
V
PP
I
O
CINFSW⋅
-------------------------1
D
η
--- -–
D
D
η
--- -1D–()⋅+⋅ESR I
O
⋅+⋅=
C
IN
I
O
VPPFSW⋅
-------------------------- -1
D
η
--- -–
D
D
η
--- -1D–()⋅+⋅⋅=
6 Application information
6.1 Input capacitor selection
The capacitor connected to the input must be capable of supporting the maximum input
operating voltage and the maximum RMS input current required by the device. The input
capacitor is subject to a pulsed current, the RMS value of which is dissipated over its ESR,
affecting the overall system efficiency.
So the input capacitor must have an RMS current rating higher than the maximum RMS
input current and an ESR value compliant with the expected efficiency.
The maximum RMS input current flowing through the capacitor can be calculated as:
Equation 14
where Io is the maximum DC output current, D is the duty cycle, η is the efficiency.
Considering η=1, this function has a maximum at D=0.5 and is equal to Io/2.
The peak-to-peak voltage across the input capacitor can be calculated as:
Equation 15
where ESR is the equivalent series resistance of the capacitor.
Given the physical dimension, ceramic capacitors can well meet the requirements of the
input filter sustaining a higher input RMS current than electrolytic / tantalum types. In this
case the equation of C
as a function of the target peak-to-peak voltage ripple (VPP) can be
IN
written as follows:
Equation 16
neglecting the small ESR of ceramic capacitors.
Considering η=1, this function has its maximum in D=0.5, therefore, given the maximum
peak-to-peak input voltage (V
is dimensioned to keep the maximum peak-to-peak voltage ripple in the order
IN
.
INMAX
In Table 6 some multi layer ceramic capacitors suitable for this device are reported.
Table 6.Input MLCC capacitors
ManufacturerSeriesCap value (μF)Rated voltage (V)
Murata
TDKC32251025
A ceramic bypass capacitor, as close as possible to the V
ESR and ESL are minimized, is suggested in order to prevent instability on the output
voltage due to noise. The value of the bypass capacitor can go from 330 nF to 1 µF.
6.2 Inductor selection
The inductance value fixes the current ripple flowing through the output capacitor. So the
minimum inductance value, to have the expected current ripple, must be selected. The rule
to fix the current ripple value is to have a ripple at 20% to 40% of the output current.
In continuous current mode (CCM), the inductance value can be calculated by the following
equation:
GRM311025
GRM551025
pin, so that additional parasitic
INA
Equation 18
where T
the low side switch (in CCM, F
Vout, is obtained at maximum T
is the conduction time of the high side switch and T
ON
=1/(TON + T
SW
, that is at minimum duty cycle. So by fixing ΔIL=20% to
OFF
)). The maximum current ripple, given the
OFF
is the conduction time of
OFF
30% of the maximum output current, the minimum inductance value can be calculated:
Equation 19
where F
is the minimum switching frequency, according to Ta bl e 4
SWMIN
The peak current through the inductor is given by:
Doc ID 17928 Rev 415/30
Page 16
Application informationST1S40
I
LPK,
I
O
ΔI
L
2
--------+=
ΔV
OUT
ESR ΔI
MAX
⋅
ΔI
MAX
8C
OUTfSW
⋅⋅
------------------------------------ -+=
Equation 20
so if the inductor value decreases, the peak current (that must be lower than the current limit
of the device) increases. The higher the inductor value, the higher the average output
current that can be delivered, without reaching the current limit.
In Ta bl e 7 below some inductor part numbers are listed.
Table 7.Inductors
ManufacturerSeriesInductor value (μH)Saturation current (A)
XPL70302.2 to 4.76.8 to 10.5
Coilcraft
Wurth
MSS10482.2 to 6.84.14 to 6.62
MSS1260105.5
WE-HC/HCA3.3 to 4.77 to 11
WE-TPC typ XLH3.6 to 6.24.5 to 6.4
WE-PD type L105.6
TDKRLF7030T2.2 to 4.74 to 6
6.3 Output capacitor selection
The current in the output capacitor has a triangular waveform which generates a voltage
ripple across it. This ripple is due to the capacitive component (charge or discharge of the
output capacitor) and the resistive component (due to the voltage drop across its ESR). So
the output capacitor must be selected in order to have a voltage ripple compliant with the
application requirements.
The amount of the voltage ripple can be calculated starting from the current ripple obtained
by the inductor selection.
Equation 21
For ceramic (MLCC) capacitors the capacitive component of the ripple dominates the
resistive one. Whilst for electrolytic capacitors the opposite is true.
Since the compensation network is internal, the output capacitor should be selected in order
to have a proper phase margin and then a stable control loop.
The equations of Chapter 5.2 help to check loop stability given the application conditions,
the value of the inductor, and of the output capacitor.
In Ta bl e 8 below some capacitor series are listed.
16/30Doc ID 17928 Rev 4
Page 17
ST1S40Application information
P
COND
RHSI
OUT
2
DRLSI
OUT
2
1D–()⋅⋅+⋅⋅=
P
SWVINIOUT
T
RISETFALL
+()
2
------------------------------------------ -
Fsw⋅⋅⋅V
INIOUTTSWFSW
⋅⋅⋅==
P
Q
VINIQ⋅=
Table 8.Output capacitors
ManufacturerSeriesCap value (μF)Rated voltage (V)ESR (mΩ)
MURATA
PANASONIC
SANYOTPA/B/C100 to 4704 to 1640 to 80
TDKC322522 to 1006.3< 5
GRM3222 to 1006.3 to 25< 5
GRM3110 to 476.3 to 25< 5
ECJ10 to 226.3< 5
EEFCD10 to 686.315 to 55
6.4 Thermal dissipation
The thermal design is important in order to prevent thermal shutdown of the device if
junction temperature goes above 150 °C. The three different sources of losses within the
device are:
a) conduction losses due to the ON resistance of high side switch (R
switch (R
Equation 22
); these are equal to:
LS
) and low side
HS
where D is the duty cycle of the application. Note that the duty cycle is theoretically given by
the ratio between V
and VIN, but is actually slightly higher to compensate the losses of
OUT
the regulator.
b) switching losses due to high side Power MOSFET turn ON and OFF; these can be
calculated as:
Equation 23
where T
switch (V
in Figure 7. T
and T
RISE
) and the current flowing into it during turn ON and turn OFF phases, as shown
DS
SW
are the overlap times of the voltage across the high side power
FAL L
is the equivalent switching time. For this device the typical value for the
equivalent switching time is 20 ns.
c) Quiescent current losses, calculated as:
Equation 24
Doc ID 17928 Rev 417/30
Page 18
Application informationST1S40
TJTARthJAP
TOT
⋅+=
V
SW
I
SW,HS
V
IN
V
DS,HS
P
COND,HS
P
COND,LS
P
SW
T
FALL
T
RISE
where IQ is the quiescent current (IQ=2.5 mA maximum).
The junction temperature T
can be calculated as:
J
Equation 25
where T
Rth
is the ambient temperature and P
A
is the equivalent thermal resistance junction to ambient of the device; it can be
JA
is the sum of the power losses just seen.
TOT
calculated as the parallel of many paths of heat conduction from the junction to the ambient.
For this device the path through the exposed pad is the one conducting the largest amount
of heat. The Rth
measured on the demonstration board described in the following
JA
paragraph is about 40 °C/W for the VFQFPN and HSOP packages and about 55 °C/W for
the SO8-BW package.
Figure 7.Switching losses
6.5 Layout consideration
The PC board layout of switching DC-DC regulator is very important in order to minimize the
noise injected in high impedance nodes, to reduce interferences generated by the high
switching current loops, and to optimize the reliability of the device.
In order to avoid EMC problems, the high switching current loops must be as short as
possible. In the buck converter there are two high switching current loops: during the ON
time, the pulsed current flows through the input capacitor, the high side power switch, the
inductor and the output capacitor; during the OFF time, through the low side power switch,
the inductor and the output capacitor.
The input capacitor connected to VINSW must be placed as close as possible to the device,
to avoid spikes on VINSW due to the stray inductance and the pulsed input current.
18/30Doc ID 17928 Rev 4
Page 19
ST1S40Application information
Input cap as close as possible
to VINSW pin
Star center for common ground
Short FB trace
VINA derived from Cin
To avoid dynamic voltage drop
Between VINA and VINSW
Short high switching
current loop
Via to connect the thermal pad
To bottom or inner ground plane
In order to prevent dynamic unbalance between VINSW and V
V
pin to the input must be derived from VINSW.
INA
, the trace connecting the
INA
The feedback pin (FB) connection to the external resistor divider is a high impedance node,
so the interferences can be minimized through the routing of the feedback node with a very
short trace and as far as possible from the high current paths.
A single point connection from signal ground to power ground is suggested.
Thanks to the exposed pad of the device, the ground plane helps to reduce the thermal
resistance junction to ambient; so a large ground plane, soldered to the exposed pad,
enhances the thermal performance of the converter allowing high power conversion.
Figure 8.PCB layout guidelines
Doc ID 17928 Rev 419/30
Page 20
Demonstration boardST1S40
7 Demonstration board
Figure 9.Demonstration boards schematic
Table 9.Component list
ReferencePart numberDescriptionManufacturer
U1ST1S40STM
L1DRA74 3R33.3 µH, Isat=5.4 ACoiltronics
C1C3225X7RE106K10 µF 25 V X7RTDK
C2C3225X7R1C226M22 µF 16 V X7RTDK
C31 µF 25 V X7R
C4NC
R162.5 kΩ
R220 kΩ
R310 kΩ
20/30Doc ID 17928 Rev 4
Page 21
ST1S40Demonstration board
Figure 10. Demonstration board PCB top and bottom: HSOP8 package
Figure 11. Demonstration board PCB top and bottom: VFQFPN package
Figure 12. Demonstration board PCB top and bottom: SO8-BW package
Doc ID 17928 Rev 421/30
Page 22
Typical characteristicsST1S40
40
50
60
70
80
90
100
0.000.501.001.502.002.503.00
Efficie ncy [%]
Iout [A]
Vin=5V
Vo=3 .3V
Vo=1 .8V
Vo=1 .2V
40
45
50
55
60
65
70
75
80
85
90
0.000.501.001.502.002.503.00
Efficiency [% ]
Iout [A]
Vin=12V
Vo=1 .8V
Vo=1 .2V
40
50
60
70
80
90
100
0.000.501.001.502.002.503.00
Efficiency [%]
Iout [A]
Vin=12V
Vo=5 V
Vo=3 .3V
Ta mb =6 0d eg C
Tjmax=150degC
Maximum I
OUT
according to 1.6W power dissipation
Limit with SO8-BW package
8 Typical characteristics
Figure 13. Efficiency vs. I
Figure 15. Efficiency vs. I
OUT
OUT
Figure 14. Efficiency vs. I
OUT
Figure 16. Overcurrent protection
Figure 17. Short-circuit protectionFigure 18. SO8-BW maximum I
22/30Doc ID 17928 Rev 4
OUT
Page 23
ST1S40Package mechanical data
9 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
1. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs
must not exceed 0.15 mm (.006 inch) in total (both sides).
Figure 20. SO8-BW package dimensions
K[
/
PP
DJH3ODQH
*
GGG&
&
6HDWLQJ
3ODQH
$
$
$
%
H
'
+
(
N
&
Doc ID 17928 Rev 425/30
Page 26
Package mechanical dataST1S40
Table 12.HSOP8 mechanical data
mminch
Dim
Min.Typ.Max.Min.Typ.Max.
A1.70 0.0669
A10.000.1500.000.0059
A21.250.0492
b0.310.510.01220.0201
c0.170.250.00670.0098
D4.804.905.000.18900.19290.1969
E5.806.006.200.22830.23620.2441
E13.803.904.000.14960.15350.1575
e1.270.0500
h0.250.500.00980.0197
L0.401.270.01570.0500
k0.008.000.3150
ccc0.100.0039
26/30Doc ID 17928 Rev 4
Page 27
ST1S40Package mechanical data
' PP7\S
( PP7\S
$0Y
Figure 21. HSOP8 package dimensions
Doc ID 17928 Rev 427/30
Page 28
Order codesST1S40
10 Order codes
Table 13.Ordering information
Order codesPackageFunction
ST1S40IPUR VFQFPN 4x4 8L
EnableST1S40IPHR HSOP8
ST1S40IDR SO8-BW
28/30Doc ID 17928 Rev 4
Page 29
ST1S40Revision history
11 Revision history
Table 14.Document revision history
DateRevisionChanges
15-Dec-20101First release
04-Mar-20112Updated: Ta b l e 1 , Tab le 2, Ta bl e 3 and Ta bl e 1 3 .
20-Dec-20113
01-Mar-20124
Updated cover page: Tab le 1, Ta b le 2 , Section 5
Added Section 6, Section 7 and Section 8
HSOP8 mechanical data and package dimensions have been
updated.
Doc ID 17928 Rev 429/30
Page 30
ST1S40
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