Datasheet ST173S12PFK2L, ST173S12PFK2, ST173S12PFK1L, ST173S12PFK1, ST173S12PFK0L Datasheet (International Rectifier)

D-450

DISCRETE POWER DIODES and THYRISTORS

DATA BOOK

ST173S SERIES

INVERTER GRADE THYRISTORS

Stud Version

175A

D-451

Bulletin I25181/B

Features

All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance

Typical Applications

Inverters
Choppers
Induction heating
All types of force-commutated converters

I

T(AV)

175 A

@ T

C

85 °C

I

T(RMS)

275 A

I

TSM

@ 50Hz 4680 A
@ 60Hz 4900 A

I

2

t @ 50Hz 110 KA2s

@ 60Hz 100 KA

2

s

V

DRM/VRRM

1000 to 1200 V

t

q

range 15 to 25 µs

T

J

- 40 to 125 °C

Parameters ST173S Units

Major Ratings and Characteristics

case style

TO-209AB (TO-93)

ST173S Series

D-452

Voltage V

DRM/VRRM

, maximum V

RSM

, maximum I

DRM/IRRM

max.

Type number Code repetitive peak voltage non-repetitive peak voltage

@ TJ = TJ max.

V V mA

10 1000 1100
12 1200 1300

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Frequency Units

50Hz 500 320 790 550 4510 3310
400Hz 450 290 810 540 1970 1350

1000Hz 330 190 760 490 1050 680 A
2500Hz 170 80 510 300 480 280
Recovery voltage Vr 50 50 50 50 50 50

Voltage before turn-on Vd V

DRM

V

DRM

V

DRM

Rise of on-state current di/dt 50 50 - - - - A/µs
Case temperature 60 85 60 85 60 85 °C
Equivalent values for RC circuit 47Ω / 0.22µF 47Ω / 0.22µF 47Ω / 0.22µF

I

TM

180oel

180

o

el

100µs

I

TM

I

TM

Current Carrying Capability

V

I

T(AV)

Max. average on-state current 175 A 180° conduction, half sine wave
@ Case temperature 85 °C

I

T(RMS)

Max. RMS on-state current 275 DC @ 75°C case temperature

I

TSM

Max. peak, one half cycle, 4680 t = 10ms No voltage
non-repetitive surge current 4900 A t = 8.3ms reapplied

3940 t = 10ms 100% V

RRM

4120 t = 8.3ms reapplied Sinusoidal half wave,

I

2

t Maximum I2t for fusing 110 t = 10ms No voltage Initial TJ = TJ max

100 t = 8.3ms reapplied

77 t = 10ms 100% V

RRM

71 t = 8.3ms reapplied

I

2

√t Maximum I2√t for fusing 1100 KA2√s t = 0.1 to 10ms, no voltage reapplied

Parameter ST173S Units Conditions

On-state Conduction

KA2s

ST173S 40

ST173S Series

D-456

Fig. 3 - On-state Power Loss Characteristics

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Fig. 4 - On-state Power Loss Characteristics

ST173S Series

D-457

Fig. 7 - On-state Voltage Drop Characteristics

Fig. 8 - Thermal Impedance Z

thJC

Characteristic

Fig. 10 - Reverse Recovery Current Characteristics

Fig. 9 - Reverse Recovered Charge Characteristics

Fig. 6 - Maximum Non-repetitive Surge Current

Fig. 5 - Maximum Non-repetitive Surge Current

ST173S Series

D-458

Fig. 13 - Frequency Characteristics

Fig. 11 - Frequency Characteristics

Fig. 12 - Frequency Characteristics

ST173S Series

D-459

Fig. 14 - Maximum On-state Energy Power Loss Characteristics

Fig. 15 - Gate Characteristics

ST173S Series

D-453

VTMMax. peak on-state voltage 2.07 ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse
V

T(TO)1

Low level value of threshold
voltage

V

T(TO)2

High level value of threshold
voltage

r

t

1

Low level value of forward
slope resistance

r

t

2

High level value of forward
slope resistance

I

H

Maximum holding current 600 TJ = 25°C, IT > 30A

I

L

Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A

Parameter ST173S Units Conditions

On-state Conduction

1.55 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

1.58 (I > π x I

T(AV)

), TJ = TJ max.

V

0.87 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

0.82 (I > π x I

T(AV)

), TJ = TJ max.

mΩ

mA

di/dt Max. non-repetitive rate of rise T

J

= TJ max, V

DRM

= rated V

DRM

of turned-on current I

TM

= 2 x di/dt

T

J

= 25°C, V

DM

= rated V

DRM, ITM

= 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T

J

= TJ max, I

TM

= 300A, commutating di/dt = 20A/µs

V

R

= 50V, tp = 500µs, dv/dt: see table in device code

Switching

Parameter ST173S Units Conditions

1000 A/µs

t

d

Typical delay time 1.1

Min Max

dv/dt Maximum critical rate of rise of T

J

= TJ max., linear to 80% V

DRM

, higher value

off-state voltage available on request

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current

Parameter ST173S Units Conditions

Blocking

500 V/µs

40 mA T

J

= TJ max, rated V

DRM/VRRM

applied

PGMMaximum peak gate power 60
P

G(AV)

Maximum average gate power 10

I

GM

Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms

+V

GM

Maximum peak positive
gate voltage

-V

GM

Maximum peak negative
gate voltage

I

GT

Max. DC gate current required
to trigger

V

GT

Max. DC gate voltage required
to trigger

I

GD

Max. DC gate current not to trigger 20 mA

V

GD

Max. DC gate voltage not to trigger 0.25 V

Triggering

Parameter ST173S Units Conditions

20

5

V TJ = TJ max, tp ≤ 5ms

200 mA

3 V

T

J

= 25°C, VA = 12V, Ra = 6Ω

TJ = TJ max., rated V

DRM

applied

t

q

Max. turn-off time 15 25

µs

W TJ = TJ max, f = 50Hz, d% = 50

ST173S Series

D-454

Ordering Information Table

TJMax. junction operating temperature range -40 to 125
T

stg

Max. storage temperature range -40 to 150

R

thJC

Max. thermal resistance, junction to case 0.105 DC operation

R

thCS

Max. thermal resistance, case to heatsink 0.04 Mounting surface, smooth, flat and greased

T Mounting torque, ± 10% 31 Nm

(275) (Ibf-in)

24.5 Nm

(210) (Ibf-in)

wt Approximate weight 280 g

Case style TO-209AB (TO-93) See Outline Table

Parameter ST173S Units Conditions

Thermal and Mechanical Specifications

°C

K/W

Non lubricated threads

5

6

8

9

ST 17 3 S 12 P F K 0

4

10

7

Device Code

3

Lubricated threads

1 2

1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - S = Compression bonding Stud
5 - Voltage code: Code x 100 = V

RRM

(See Voltage Ratings table)

6 - P = Stud base 3/4" 16UNF-2A

M = Stud base metric threads M16 x 1.5

7 - Reapplied dv/dt code (for t

q

test condition)

8 - t

q

code

9 - 0 = Eyelet terminals (Gate and Aux. Cathode Leads)

1 = Fast-on terminals (Gate and Aux. Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)

- Critical dv/dt:
None = 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)

180° 0.016 0.012
120° 0.019 0.020

90° 0.025 0.027 K/W T

J

= TJ max.
60° 0.036 0.037
30° 0.060 0.060

Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions

∆R

thJC

Conduction

(The following table shows the increment of thermal resistence R

thJC

when devices operate at different conduction angles than DC)

dv/dt - tq combinations available

dv/dt (V/µs) 20 50 100 200 400

15 CL -- -- -- -­18 CP DP EP FP * -­20 CK DK EK FK * HK
25 CJ DJ EJ FJ HJ
30 -- DH EH FH HH

tq(µs)

*Standard part number.

All other types available only on request.

10

ST173S Series

D-455

Case Style TO-209AB (TO-93)

All dimensions in millimeters (inches)

Fast-on Terminals

Outline Table

Case Style TO-209AB (TO-93) Flag

All dimensions in millimeters (inches)

CERAMIC HOUSING

27 .5 (1 .0 8 ) M A X .

38 .5 (1 . 5 2 ) M A X .

3 (0.12)

8 0 (3.15 ) M A X .

DIA. 27.5 (1.08) MAX.

1 6 (0 .63 ) M A X.

FLAG TERMINALS

1.5 (0.06) DIA.

SW 32

22 (0.89)

DIA. 6.5 (0.25)

13 ( 0.5 1)

14 (0.55)

*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.

3/4"-16UNF-2A*

C.S. 0.4 mm

2

10 (0.39)

RED SHRINK

RED CATHODE

RED SILICON RUBBER

4.3 (0.17) DIA

21 (0.83)

12.5 (0.49) MA X.

15 7 (6 .1 8)

170 (6.69 )

(.0006 s.i.)

8.5 (0.33) DIA.

16.5 (0.65) MAX.

MAX.

70 (2.7 5) MI N .

CERAMIC HOUSING

22.5 (0.88) MAX. DIA.

29 (1 .14) M AX.

SW 27

C.S. 16mm

2

FLEXIBLE LEAD

(.025 s.i.)

2.6 (0.10) MAX.

WHITE SHRINK

2

0

(

0

.

7

9

)

M

I

N

.

29.5 (1.16)

MAX.

1/2"-20UNF-2A

9

.

5

(

0

.

3

7

)

M

I

N

.

WHITE GATE

215 (8.46)

AMP. 280000-1

REF-250