Page 1
Bulletin I25164 rev. C 02/00
ST180C..C SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters ST180C..C Units
I
T(AV)
I
T(RMS)
I
TSM
@ T
hs
@ T
hs
@ 50Hz 5000 A
@ 60Hz 5230 A
350 A
55 °C
660 A
25 °C
350A
case style TO-200AB (A-PUK)
I2t@
V
DRM/VRRM
t
q
T
J
50Hz 125 KA2s
@ 60Hz 114 KA
typical 100 µs
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400 to 2000 V
- 40 to 125 °C
2
s
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ST180C..C Series
Bulletin I25164 rev. C 02/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code peak and off-state voltage repetitive peak voltage @ T
04 400 500
08 800 900
ST180C..C 30
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
On-state Conduction
Parameter ST180C..C Units Conditions
I
Max. average on-state current 350 (140) A 180° conduction, half sine wave
T(AV)
@ Heatsink temperature 55 (85) °C double side (single side) cooled
Max. RMS on-state current 660 @ 25°C heatsink temperature double side cooled
I
T(RMS)
I
Max. peak, one-cycle 5000 t = 10ms No voltage
TSM
non-repetitive surge current 5230 A t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 125 t = 10ms No voltage Initial TJ = TJ max.
2
√t Maximum I2√t for fusing 1250 KA2√s t = 0.1 to 10ms, no voltage reapplied
I
V
Low level value of threshold
T(TO)
1
voltage
High level value of threshold
V
T(TO)
2
voltage
Low level value of on-state
r
t1
slope resistance
High level value of on-state
r
t2
slope resistance
V
Max. on-state voltage 1.96 V Ipk= 750A, TJ = TJ max, tp = 10ms sine pulse
TM
I
Maximum holding current 600
H
I
Max. (typical) latching current 1000 (300)
L
, max. repetitive V
, maximum non- I
RSM
DRM/IRRM
VVmA
4200 t = 10ms 100% V
4400 t = 8.3ms reapplied Sinusoidal half wave,
114 t = 8.3ms reapplied
KA2s
88 t = 10ms 100% V
81 t = 8.3ms reapplied
1.08 (16.7% x π x I
V
1.14 (I > π x I
T(AV)
1.18 (16.7% x π x I
mΩ
1.14 (I > π x I
mA T
T(AV)
= TJ max, anode supply 12V resistive load
J
RRM
RRM
< I < π x I
T(AV)
),TJ = TJ max.
< I < π x I
T(AV)
),TJ = TJ max.
), TJ = TJ max.
T(AV)
), TJ = TJ max.
T(AV)
max.
= TJ max
J
2
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Page 3
ST180C..C Series
Bulletin I25164 rev. C 02/00
Switching
Parameter ST180C..C Units Conditions
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current T
t
Typical delay time 1.0
d
t
Typical turn-off time 100
q
Blocking
Parameter ST180C..C Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
I
Max. peak reverse and off-state
DRM
leakage current
I
RRM
Triggering
Parameter ST180C..C Units Conditions
PGMMaximum peak gate power 10 TJ = TJ max, tp ≤ 5ms
P
Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50
G(AV)
Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms
I
GM
+V
Maximum peak positive
GM
gate voltage
Maximum peak negative
-V
GM
gate voltage
DC gate current required
I
GT
to trigger
V
DC gate voltage required
GT
to trigger
I
DC gate current not to trigger 10 m A
GD
VGDDC gate voltage not to trigger 0.25 V
1000 A/µs
= TJ max, anode voltage ≤ 80% V
J
Gate current 1A, dig/dt = 1A/µs
= 0.67% V
V
d
µs
I
= 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V
TM
dv/dt
DRM, TJ
= 20V/µs, Gate 0V 100Ω, tp = 500µs
500 V/µsTJ = TJ max linear to 80% rated V
30 m A TJ = TJ max, rated V
W
20
= TJ max, tp ≤ 5ms
VT
J
5.0
TYP. MAX.
180 -
90 150
40 -
2.9 -
1.8 3.0
1.2 -
T
= - 40°C
J
mA T
= 25°C
J
TJ = 125°C
TJ = - 40°C
VTJ = 25°C
T
= 125°C
J
= TJ max
T
J
Max. required gate trigger/ current/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
= 25°C
DRM/VRRM
anode-to-cathode applied
DRM
DRM
applied
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3
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ST180C..C Series
Bulletin I25164 rev. C 02/00
Thermal and Mechanical Specification
Parameter ST180C..C Units Conditions
TJMax. operating temperature range -40 to 1 25
Max. storage temperature range - 40 to 150
T
stg
R
Max. thermal resistance, 0.17 DC operation single side cooled
thJ-hs
junction to heatsink 0.08 DC operation double side cooled
Max. thermal resistance, 0.033 DC operation single side cooled
R
thC-hs
case to heatsink 0.017 DC operation double side cooled
F Mounting force, ± 10% 4900 N
(500) (Kg)
wt Approximate weight 50 g
Case style TO - 200AB (A-PUK) See Outline Table
∆R
Conduction
thJ-hs
(The following table shows the increment of thermal resistence R
Conduction angle Units Conditions
180° 0.015 0.015 0.011 0.011 T
120° 0.018 0.019 0.019 0.019
90° 0.024 0.024 0.026 0.026 K/W
60° 0.035 0.035 0.036 0.037
30° 0.060 0.060 0.060 0.061
Sinusoidal conduction Rectangular conduction
Single Side Double Side Single Side Double Side
°C
K/W
K/W
when devices operate at different conduction angles than DC)
thJ-hs
J
= TJ max.
Ordering Information Table
Device Code
1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V
6 - C = Puk Case TO-200AB (A-PUK)
7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8 - Critical dv/dt: None = 500V/µsec (Standard value)
4
ST 18 0 C 20 C 1
51 2 3
4
(See Voltage Rating Table)
RRM
L = 1000V/µsec (Special selection)
7
6 8
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Outline Table
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400
DC
30˚
60˚
90˚
120˚
180˚
Conduction Period
ST180C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W
thJ-hs
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
0.3 (0.01) MIN.
0.3 (0.01) MIN.
6.5 (0.26)
4.75 (0.19)
25°± 5°
13.7 / 14.4
(0.54 / 0.57)
ST180C..C Series
Bulletin I25164 rev. C 02/00
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
Maximum Allowable Heatsink Temperature (°C)
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42 (1.65) MAX.
28 (1.10)
130
120
110
ST180C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W
thJ-hs
100
90
Conduction Angle
80
30˚
70
60
50
40
0 50 100 150 200 250
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
60˚
90˚
120˚
180˚
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
5
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ST180C..C Series
20
30
40
50
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350 400 450
30˚
60˚
90˚
120˚
180˚
Conduction Angle
ST180C..C Series
(Double Side Cooled)
R (DC) = 0.08 K/W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700
DC
30˚
60˚
90˚
120˚
180˚
Conduction Period
ST180C..C Series
(Double Side Cooled)
R (DC) = 0.08 K/W
thJ-hs
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
0 100 200 300 400 500 600 700
DC
180˚
120˚
90˚
60˚
30˚
RMS Limit
Conduction Period
ST180C..C Series
T = 125˚C
J
2000
2500
3000
3500
4000
4500
5000
0.01 0.1 1
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
ST180C..C Series
Maximum Non Repetitive Surge Current
Initial T = 125˚C
No Voltage Reapplied
Rated V Reapplied
RRM
J
Bulletin I25164 rev. C 02/00
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
1000
900
800
700
600
180˚
120˚
90˚
60˚
30˚
RMS Limit
500
400
300
200
100
0
0 50 100 150 200 250 300 350 400 450
Maximum Average On-state Power Loss (W)
Conduction Angle
ST180C..C Series
T = 125˚C
J
Average On-state Current (A)
Fig. 5- On-state Power Loss Characteristics
4500
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
4000
Initial T = 125˚C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
3500
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
Fig. 6- On-state Power Loss Characteristics
3000
2500
2000
Peak Half Sine Wave On-state Current (A)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
6
ST180C..C Series
1 10 100
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
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Page 7
100
1000
10000
123456
T = 25˚C
J
T = 125˚C
J
ST180C..C Series
1
thJ-hs
0.1
Instantaneous On-state Current (A)
Fig. 9 - On-state Voltage Drop Characteristics
Steady State Value
R = 0.17 K/W
thJ-hs
(Single Side Cooled)
R = 0.08 K/W
thJ-hs
(Double Side Cooled)
(DC Operation)
ST180C..C Series
Bulletin I25164 rev. C 02/00
Instantaneous On-state Voltage (V)
0.01
0.001
Transient Thermal Impedance Z (K/W)
Instantaneous Gate Voltage (V)
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ST180C..C Series
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
10
thJ-hs
(a)
Characteristics
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
(b)
Tj=-40 ˚ C
Tj=25 ˚ C
1
Tj=125 ˚ C
(2) (3)
(1)
VGD
IGD
0.1
0.001 0.01 0.1 1 10 100
Device: ST180C..C Series
Frequency Limited by PG(AV)
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
(4)
7
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