Datasheet ST173C12CHK1, ST173C12CHK0, ST173C10HK1L, ST173C10HK0L, ST173C10CHK3L Datasheet (International Rectifier)

D-510

DISCRETE POWER DIODES and THYRISTORS

DATA BOOK

330A

INVERTER GRADE THYRISTORS Hockey Puk Version

ST173C..C SERIES

D-511

Bulletin I25180/A

Typical Applications

Inverters
Choppers
Induction heating
All types of force-commutated converters

Features

Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance

case style TO-200AB (A-PUK)

I

T(AV)

330 A

@ T

hs

55 °C

I

T(RMS)

610 A

@ T

hs

25 °C

I

TSM

@ 50Hz 4680 A
@ 60Hz 4900 A

I

2

t @ 50Hz 110 KA2s

@ 60Hz 100 KA

2

s

V

DRM/VRRM

1000 to1200 V

t

q

range 15 to 30 µs

T

J

- 40 to 125 °C

Major Ratings and Characteristics

Parameters ST173C..C Units

ST173C..C Series

D-512

Voltage V

DRM/VRRM

, maximum V

RSM

, maximum I

DRM/IRRM

max.

Type number Code repetitive peak voltage non-repetitive peak voltage

@ TJ = TJ max.

V V mA

10 1000 1100
12 1200 1300

I

T(AV)

Max. average on-state current 330 (120) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled

I

T(RMS)

Max. RMS on-state current 610 DC @ 25°C heatsink temperature double side cooled

I

TSM

Max. peak, one half cycle, 4680 t = 10ms No voltage
non-repetitive surge current 4900 A t = 8.3ms reapplied

3940 t = 10ms 100% V

RRM

4120 t = 8.3ms reapplied Sinusoidal half wave,

I

2

t Maximum I2t for fusing 110 t = 10ms No voltage Initial TJ = TJ max

100 t = 8.3ms reapplied

77 t = 10ms 100% V

RRM

71 t = 8.3ms reapplied

I

2

√t Maximum I2√t for fusing 1100 KA2√s t = 0.1 to 10ms, no voltage reapplied

Parameter ST173C..C Units Conditions

On-state Conduction

KA2s

ELECTRICAL SPECIFICATIONS

Voltage Ratings

ST173C..C 40

Frequency Units

50Hz 760 660 1200 1030 5570 4920
400Hz 730 590 1260 1080 2800 2460

1000Hz 600 490 1200 1030 1620 1390 A
2500Hz 350 270 850 720 800 680
Recovery voltage Vr 50 50 50 50 50 50

Voltage before turn-on Vd V

DRM

V

DRM

V

DRM

Rise of on-state current di/dt 50 50 - - - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 47Ω / 0.22µF 47Ω / 0.22µF 47Ω / 0.22µF

I

TM

180oel

180

o

el

100µs

I

TM

I

TM

Current Carrying Capability

V

ST173C..C Series

D-516

Fig. 7 - Maximum Non-repetitive Surge Current

Single and Double Side Cooled

Fig. 8 - Maximum Non-repetitive Surge Current

Single and Double Side Cooled

Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics

Fig. 3 - Current Ratings Characteristics

Fig. 4 - Current Ratings Characteristics

ST173C..C Series

D-517

Fig. 9 - On-state Voltage Drop Characteristics

Fig. 10 - Thermal Impedance Z

thJ-hs

Characteristics

Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics

Fig. 13 - Frequency Characteristics

ST173C..C Series

D-518

Fig. 16 - Maximum On-state Energy Power Loss Characteristics

Fig. 15 - Frequency Characteristics

Fig. 14 - Frequency Characteristics

ST173C..C Series

D-519

Fig. 17 - Gate Characteristics

ST173C..C Series

D-513

VTMMax. peak on-state voltage 2.07 ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse
V

T(TO)1

Low level value of threshold
voltage

V

T(TO)2

High level value of threshold
voltage

r

t

1

Low level value of forward
slope resistance

r

t

2

High level value of forward
slope resistance

I

H

Maximum holding current 600 TJ = 25°C, IT > 30A

I

L

Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A

Parameter ST173C..C Units Conditions

On-state Conduction

1.55 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

1.61 (I > π x I

T(AV)

), TJ = TJ max.

V

0.87 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

0.77 (I > π x I

T(AV)

), TJ = TJ max.

mΩ

mA

di/dt Max. non-repetitive rate of rise T

J

= TJ max, V

DRM

= rated V

DRM

of turned-on current I

TM

= 2 x di/dt

T

J

= 25°C, V

DM

= rated V

DRM, ITM

= 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T

J

= TJ max, I

TM

= 300A, commutating di/dt = 20A/µs

V

R

= 50V, tp = 500µs, dv/dt: see table in device code

Switching

Parameter ST173C..C Units Conditions

1000 A/µs

t

d

Typical delay time 1.1

Min Max

dv/dt Maximum critical rate of rise of T

J

= TJ max. linear to 80% V

DRM

, higher value

off-state voltage available on request

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current

Parameter ST173C..C Units Conditions

Blocking

500 V/µs

40 mA T

J

= TJ max, rated V

DRM/VRRM

applied

PGMMaximum peak gate power 60
P

G(AV)

Maximum average gate power 10

I

GM

Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms

+V

GM

Maximum peak positive
gate voltage

-V

GM

Maximum peak negative
gate voltage

I

GT

Max. DC gate current required
to trigger

V

GT

Max. DC gate voltage required
to trigger

I

GD

Max. DC gate current not to trigger 20 mA

V

GD

Max. DC gate voltage not to trigger 0.25 V

Triggering

Parameter ST173C..C Units Conditions

20

5

V TJ = TJ max, tp ≤ 5ms

200 mA

3 V

T

J

= 25°C, VA = 12V, Ra = 6Ω

TJ = TJ max, rated V

DRM

applied

t

q

Max. turn-off time 15 30

µs

W TJ = TJ max, f = 50Hz, d% = 50

ST173C..C Series

D-514

TJMax. operating temperature range -40 to 125
T

stg

Max. storage temperature range -40 to 150

R

thJ-hs

Max. thermal resistance, 0.17 DC operation single side cooled
junction to heatsink 0.08 DC operation double side cooled

R

thC-hs

Max. thermal resistance, 0.033 DC operation single side cooled
case to heatsink 0.017 DC operation double side cooled

F Mounting force, ± 10% 4900 N

(500) (Kg)

wt Approximate weight 50 g

Parameter ST173C..C Units Conditions

K/W

Thermal and Mechanical Specification

°C

Case style TO - 200AB (A-PUK) See Outline Table

K/W

∆R

thJ-hs

Conduction

(The following table shows the increment of thermal resistence R

thJ-hs

when devices operate at different conduction angles than DC)

Single Side Double Side Single Side Double Side
180° 0.015 0.016 0.011 0.011
120° 0.018 0.019 0.019 0.019

90° 0.024 0.024 0.026 0.026 K/W T

J

= TJ max.
60° 0.035 0.035 0.036 0.037
30° 0.060 0.060 0.060 0.061

Sinusoidal conduction Rectangular conduction

Conduction angle Units Conditions

Ordering Information Table

5 6 8 9

ST 17 3 C 12 C H K 1

3 4

10

7

Device Code

1 2

1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V

RRM

(See Voltage Rating Table)

6 - C = Puk Case TO-200AB (A-PUK)
7 - Reapplied dv/dt code (for t

q

test condition)

8 - t

q

code

9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)

1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)

3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)

- Critical dv/dt:
None = 500V/µsec (Standard value)

L = 1000V/µsec (Special selection)

10

tq(µs)

dv/dt - tq combinations available

dv/dt (V/µs) 20 50 100 200 400

15 CL -- -- -- -­18 CP DP EP FP * -­20 CK DK EK FK * HK
25 CJ DJ EJ FJ HJ
30 -- DH EH FH HH

*Standard part number.

All other types available only on request.

ST173C..C Series

D-515

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Outline Table

Case Style TO-200AB (A-PUK)

All dimensions in millimeters (inches)

DIA. MAX.

4.75 (0.19)

28 (1.10)

6.5 (0.26)

19 (0.75)

0.3 (0.01) MIN.

0.3 (0.01) MIN.

13.7 / 14.4

(0.54 / 0.57)

25°± 5°

GATE TERM. FOR

1.47 (0.06) DIA.
PIN RECEPTACLE

ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.

19 (0.75)

DIA. MAX.

38 (1.50) DIA MAX.

2 HOLES 3.56 (0.14) x

1.83 (0.07) MIN. DEEP

42 (1.65) MAX.