The SPF-5122Z is a high performance pHEMT MMIC LNA designed for
operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF-5122Z offers ultra-low noise figure and high linearity
performance in a gain block configuration. Its single-supply operation and
integrated matching networks make implementation remarkably simple. A
high maximum input power specification make it ideal for high dynamic
range receivers.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
9
Si CMOS
Si BJT
GaN HEMT
RF MEMS
25.0
22.0
19.0
16.0
13.0
Gain (dB)
10.0
7.0
4.0
1.0
Gain and NF versus Frequency
Broadband Application Circuit (5V, 90mA)
Gain
NF
0.00.51.01.52.02.53.0
Frequency (MHz)
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
NF (dB)
Features
Ultra-Low Noise Figure=0.60dB
@ 900MHz
Gain=18.9dB @ 900MHz
High Linearity: OIP3=40.5dBm
@ 1900MHz
Channel Power=13.4dBm (-
65dBc IS95 ACPR, 880MHz)
P
=23.4dBm @ 1900MHz
1dB
Single-Supply Operation: 5V @
Idq=90mA
Flexible Biasing Options: 3-5V,
Adjustable Current
Broadband Internal Matching
Applications
Cellular, PCS, W-CDMA, ISM,
WiMAX Receivers
PA Driver Amplifier
Low Noise, High Linearity Gain
Block Applications
Parameter
Min.Typ.Max.
Specification
UnitCondition
Small Signal Power Gain18.9dB0.9GHz
12.9dB1.96GHz
Output Power at 1dB Compression23.0dBm0.9GHz
23.4dBm1.9GHz
Output Third Order Intercept Point37.9dBm0.9GHz
40.5dBm1.9GHz
Noise Figure0.59dB0.9GHz
0.64dB1.9GHz
Input Return Loss-14.6dB0.9 GHz
-21.0dB1.9GHz
Output Return Loss-16.8dB0.9GHz
-13.0dB1.9GHz
Reverse Isolation-24.1dB0.9GHz
-18.4dB1.9GHz
Device Operating Voltage5.005.25V
Device Operating Current90mAQuiescent
Thermal Resistance65°C/WJunction to lead
Test Conditions: VD=5V, IDQ=90mA, OIP3 Tone Spacing=1MHz, P
Z
=50Ω, 25°C, Broadband Application Circuit
S=ZL
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enab ling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUE TOOTH is a trade-
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
EDS-105470 Rev E
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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SPF-5122Z
Preliminary
Absolute Maximum Ratings
ParameterRatingUnit
Max Device Current (lD)120mA
Max Device Voltage (V
Max RF Input Power27dBm
Max Dissipated Power660mW
Max Junction Temperature (T
Operating Temperature Range (T
Max Storage Temperature-65 to +150°C
ESD Rating - Human Body Model
(HBM)
Moisture Sensitivity Level (MSL)MSL 1
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on
page one.
Bias Conditions should also satisfy the following expression:
I
<(TJ-TL)/RTH, j-l and TL=T
DVD
)5.5V
D
)150°C
J
)-40 to + 85°C
L
Class 1B
LEAD
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective 2002/95/EC (at time of this docume nt revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its u se, nor for any
infringement of patents, or other rights of third par ties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Caution! ESD sensitive device.
Typical RF Performance - Broadband Application Circuit with VD=5V, ID=90mA
ParameterUnit0.1
GHz*
Small Signal GaindB27.024.019.015.013.012.011.06.07.0