Page 1
Product Description
Stanford Microdevices’ SPF-3043 is a high performance
0.25µm pHEMT Gallium Arsenide FET. This 300µm device is
ideally biased at 3V,20mA for lowest noise performance and
battery powered requirements. At 5V,40mA the device
delivers excellent OIP3 of 32dBm. It provides ideal
performance as a driver stage in many commercial and
industrial LNA applications.
35
30
25
20
15
Gain, Gmax (dB)
10
5
0246810
Typical Gain Performance
3V,20mA
5V,40mA
Gmax
Gain
Frequency (GHz)
Preliminary
Preliminary
SPF-3043
Low Noise pHEMT GaAs FET
Product Features
• DC-10 GHz Operation
• Ultra Low NF: 0.25 dB @ 1 GHz
• High Assoc. Gain: 25 dB @ 1 GHz
• Low Current Draw for NFopt (3V,20mA)
• +32 dBm OIP3, +20 dBm P1dB (5V,40mA)
• Low Cost High Performance pHEMT
Applications
• LNA for Wireless Infrastructure
• Fixed Wireless Infrastructure
• Wireless Data
• Driver Stage for Low Power Applications
Qualification Pending April 2001
0.50 dB @ 2 GHz
22 dB @ 2 GHz
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SD
Z,*LZ=L*
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SZ=S
05= Ω
Z
SZ=L
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Z
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Z
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SD
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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-101772 Rev. A
Page 2
Typical Performance
Preliminary
SPF-3043 Low Noise pHEMT GaAs FET
Gain vs Frequency (3V,20mA)
35
30
25
20
15
Gain, Gmax (dB)
10
5
0246810
Isolation
Gmax
Gain
0
-10
Isolation (dB)
-20
-30
-40
-50
-60
35
30
25
20
15
Gain, Gmax (dB)
10
Gain vs Frequency (5V,40mA)
Isolation
Gmax
Gain
5
0246810
0
-10
Isolation (dB)
-20
-30
-40
-50
-60
Frequency (GHz) Frequency (GHz)
S11,S22 vs Frequency (3V,20mA)
0.5
0.2
0.0 0.2 0.5 1.0 2.0 5.0
0.2
S11
8 GHz
6 GHz
0.5
10 GHz
4 GHz
S22
1.0
2.0
5.0
inf
1 GHz
5.0
2 GHz
3 GHz
1.0
2.0
Note: S-parameters are de-embedded to the device leads with ZS=ZL=50Ω. The data represents typical performace of the device. Deembedded s-parameters can be downloaded from our website (www.stanfordmicro.com).
S11,S22 vs Frequency (5V,40mA)
0.5
0.2
0.0 0.2 0.5 1.0 2.0 5.0
0.2
S11
8 GHz
6 GHz
0.5
10 GHz
4 GHz
S22
1.0
2.0
1 GHz
2 GHz
3 GHz
1.0
2.0
5.0
inf
5.0
Typical Performance
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http://www.stanfordmicro.com
EDS-101772 Rev. A
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Page 3
Absolute Maximum Ratings
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Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
SD
SG
DS
GS
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SSID
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Preliminary
SPF-3043 Low Noise pHEMT GaAs FET
Part Number Ordering Information
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3403-FPS"70003
Part Symbolization
The part will be symbolized with an “F3” and a
Pin 1 indicator on the top surface of the package.
Pin Description
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4
D
e
e
Package Dimensions
1
3
2
L
C
HE
L
b
F3
C
L
b1
A2
E
MIN
1.15
1.85
1.80
0.80
0.80
0.00
0.10
0.65 BSC
0.25
0.10
MAX
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.40
0.18
SYMBOL
Q1
C
NOTE:
1. ALL DIMENSIONS ARE IN MILLIMETERS.
2. DIMENSIONS ARE INCLUSIVE OF PLATING.
A
3. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH
& METAL BURR.
4. ALL SPECIFICATIONS COMPLY TO EIAJ SC70.
A1
5. DIE IS FACING UP FOR MOLD AND FACING DO WN
FOR TRIM/FORM. ie :REVERSE TRIM/FORM.
6. PACKAGE SURFACE TO BE MIRROR FINISH.
E
D
HE
A
A2
A1
Q1
e
b
b1 0.55 0.70
c
L 0.10 0.30
Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a
continuous groundplane on the backside of the board.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-101772 Rev. A
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