Page 1
Preliminary
Product Description
Stanford Microdevices’ SPF-2086TK is a high performance
PHEMT Gallium Arsenide FET utilitzing 0.25 micron long by
300 micron wide Schottky barrier gates.
This device is ideally biased at Vds=3V and Id=20mA for lowest
noise performance and battery powered requirements. At 5V
40mA bias it delivers excellent linearity. The SPF-2086TK
provides ideal performance as driver stages in many
commercial, industrial and military LNA applications.
Max A vailable Gain vs. Frequency
30
24
dB
18
12
6
01234
Frequency GHz
S
YMBOL
P
Bd1
PIO
FN
A
G
I
SSD
V
P
G
M
V
SGB
V
SDB
htdiwdnaB niagdetimilybdenimretedhtdiwdnaB:etoN
3
TPO
P
ARAMETERS
ecnamrofrep
zHG4otzHG1=f
zHG4otzHG1=f
erugiFesioNmumitpOzHG1=f
niaGdetaicossAzHG1=f
egatloVffo-hcniPV
ecnatcudnocsnarTV
noisserpmoCBd1tarewoPtuptuO
tnioPtpecretnIredrOdrihTtuptuO
tnerruCnoitarutaSniarDV
egatloVnwodkaerBecruoSotetaG V71-8-
egatloVnwodkaerBecruoSotniarD V71-8-
T
ESTCONDITIONS
Z0=05OHMS,T= C°52
V
I,V5=
SD
D
I,V3=
V
SD
D
V
I,V5=
SD
D
I,V3=
V
SD
D
zHG2=f
zHG4=f
I,V3=
V
SD
D
zHG2=f
zHG4=f
I,V3=
V
SD
D
V,V2=
SD
I,V2=
SD
I,V2=
SD
SPF-2086TK
0.1 GHz - 4 GHz Low Noise PHEMT
GaAs FET
Product Features
• High Gain: 20 dB at 1900 MHz
• +20 dBm Output Power at P1dB
• Low Noise Figure: 0.4 dB NF at
1900 MHz
• Low Current Draw: 20 mA typ. at 3.0V
Applications
• LNA for Cellular , PCS, CDPD
• Wireless Data, SONET
• Driver Stage for low power
applications
:
Am04=
Am02=
Am04=
Am02=
Am02=
Am02=
V0=Am0358041
SG
Am1=V 0.1-
SD
Am02=ohmm001
SD
U
NITS
zHG1.00.4
mBd
mBd
mBd
mBd
Bd
Bd
Bd
Bd
Bd
Bd
MIN. TYP. MAX.
0.02
0.51
23
82
82.0
44.0
45.0
1.32
8.71
9.31
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor A ve., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
1
EDS-101225 Rev. B
Page 2
Absolute Maximum Ratings
Operation of this device above any one of these
parameters may cause permanent damage.
Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TOP)/T
L
Noise parameters, at typical operating frequencies:
Bias Vds=3.0V, Ids=20mA
GGGGG
F
REQHGZ
|GGGGG
OPT
|
OPTANG
Preliminary
SPF-2086TK 0.1- 4.0 GHz PHEMT GaAs FET
retemaraP lobmyS eulaV tinU
egatloVecruoS-niarDV
egatloVecruoS-etaGV
tnerruCniarDI
tnerruCetaGdrawoFI
rewoPtupnIFRP
erutarepmeTgnitarepOT
egnaRerutarepmeTegarotST
erutarepmeTlennahCT
noitapissiDrewoPP
FN
MIN
)noitcnuj-dael(ecnatsiseRlamrehTT
Bd rNWWWWW GABd
DS
GS
DS
DSF
IN
PO
S
CH
L
DISS
7+V
7-V
I
DSS
01Am
02+mBd
051+C°
011W/C°
004Wm
Am
58+ot04-C°
051+ot56-C°
F
REQHGZ
0.1
0.2
0.4
47.07182.022.01.32
96.01344.081.08.71
45.04845.090.09.31
Bias Vds=5.0V, Ids=40mA
GGGGG
|GGGGG
OPT
|
0.1
0.2
0.4
67.09143.072.09.32
76.06355.032.01.91
74.03957.011.00.51
OPTANG
FN
MIN
Bd rNWWWWW GABd
522 Almanor A ve., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
2
EDS-101225 Rev. B
Page 3
Scattering Parameters:
Typical S-parameters Vds=3.0V, Ids=20 mA
zHGqerF |11S| gnA11S Bd12S |12S| gnA12S Bd21S |21S| gnA21S |22S| gnA22S
50.0
1.0
5.0
0.1
5.1
0.2
5.2
0.3
5.3
0.4
Note : De-embedded to device pins
89.036.0-1.810.86.9716.63-10.04.82156.07.1-
89.08.2-5.715.76.7715.94-00.07.00136.09.1-
79.03.51-5.715.75.5615.83-10.06.5826.05.9-
69.08.92-3.713.70.2519.23-20.01.9616.09.81-
39.05.44-1.712.78.8317.92-30.01.2695.04.72-
88.08.06-0.710.77.4214.72-40.03.3555.03.73-
28.05.87-8.619.66.0116.52-50.00.3415.04.84-
67.09.59-3.616.61.793.42-60.05.3374.04.85-
17.01.211-8.512.65.486.32-70.00.6254.00.76-
66.06.521-3.518.54.371.32-70.07.8134.06.37-
Preliminary
SPF-2086TK 0.1- 4.0 GHz PHEMT GaAs FET
Typical S-parameters Vds=5.0V, Ids=40 mA
zHGqerF |11S| gnA11S Bd12S |12S| gnA12S Bd21S |21S| gnA21S |22S| gnA22S
50.0
1.0
5.0
0.1
5.1
0.2
5.2
0.3
5.3
0.4
89.068.1-56.9106.941.97128.04-10.014.24117.094.1-
89.000.4-01.9120.908.67144.63-20.074.1696.026.2-
79.055.81-69.8178.836.16183.73-10.031.9786.043.9-
19.030.63-65.8174.834.44106.23-20.000.1776.003.81-
38.002.35-70.8100.844.82178.92-30.024.3646.051.62-
37.059.17-55.7145.783.21104.72-40.062.4595.094.43-
46.065.29-69.6150.740.7943.62-50.008.7455.081.34-
55.069.211-71.6144.632.3860.52-60.071.1405.059.05-
84.007.231-63.5168.522.0761.42-60.080.7384.095.75-
34.099.941-65.4143.599.8574.32-70.067.2364.026.26-
Note : De-embedded to device pins
522 Almanor A ve., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
3
EDS-101225 Rev. B
Page 4
Preliminary
SPF-2086TK 0.1- 4.0 GHz PHEMT GaAs FET
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
PCB Pad Layout
P2T
Part Number Ordering Information
rebmuNtraPeziSleeRleeR/seciveD
KT6802-FPS"70001
Part Symbolization
The part will be symbolized with a “P2T” designator
on the top surface of the package.
niP
noitangiseD
1etaG
2ecruoS
3niarD
4ecruoS
Package Dimensions
P2T
522 Almanor A ve., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
4
EDS-101225 Rev. B
Page 5
For 86 Outline
Preliminary
SPF-2086TK 0.1- 4.0 GHz PHEMT GaAs FET
Component Tape and Reel Packaging
T ape Dimensions
D
ESCRIPTION
ytivaC htgneL
htdiW
tekcoS
htpeD
hctiP
retemaideloHmottoB
noitarofreP retemaiD
hctiP
noitisoP
epaTrevoC htdiW
ssenkcihTepaT
epaTreirraC htdiW
ssenkcihTepaT
ecnatsiD )noitceriDhtdiW(noitarofrePotytivaC
)noitceriDhtgneL(noitarofrePotytivaC
522 Almanor A ve., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
5
S
YMBOL
A
D
D
P
W
P
S
IZE(MM
)
01.0±01.6
B
H
K
P
1
o
o
E
C
t
01.0±02.6
01.0±01.3
01.0±00.2
01.0±00.8
.nim05.1
01.0±05.1
01.0±00.4
01.0±57.1
52.0±01.9
10.0±50.0
03.0±00.21
T
F
2
EDS-101225 Rev. B
50.0±03.0
50.0±05.5
50.0±00.2
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