Preliminary
Product Description
Stanford Microdevices’ SPF-2086T is a high performance
PHEMT Gallium Arsenide FET utilitzing 0.25 micron long by
300 micron wide Schottky barrier gates.
This device is ideally biased at Vds=3V and Id=20mA for lowest
noise performance and battery powered requirements. At 5V,
40mA the device delivers excellent IP3 of 32 dBm. It provides
ideal performance as driver stages in many commercial,
industrial and military LNA applications.
Max A vailable Gain vs. Frequency
30
24
dB
18
12
6
0
024681012
Frequency GHz
SPF-2086T
0.1 GHz - 12 GHz Low Noise
PHEMT GaAs FET
Product Features
• High Gain: 20 dB at 1900 MHz
• +20 dBm Output Power at P1dB
• Low Noise Figure: 0.4 dB NF at
1900 MHz
• Low Current Draw: 20 mA typ. at 3.0V
Applications
• LNA for Cellular , PCS, CDPD
• Wireless Data, SONET
• Driver Stage for low power
applications
SYMBOL PARAMETERS TEST CONDITIONS:
htdiwdnaB niagdetimilybdenimretedhtdiwdnaB:etoN
P
Bd1
PIO
3
FN
TPO
A
G
I
SSD
V
P
G
M
V
SGB
V
SDB
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
ecnamrofrep
zHG21otzHG1=f
zHG21otzHG1=f
erugiFesioNmumitpOzHG1=f
niaGdetaicossAzHG1=f
egatloVffo-hcniPV
ecnatcudnocsnarTV
noisserpmoCBd1tarewoPtuptuO
tnioPtpecretnIredrOdrihTtuptuO
tnerruCnoitarutaSniarDV
egatloVnwodkaerBecruoSotetaG V71-8-
egatloVnwodkaerBecruoSotniarD V71-8-
Z0=05O
V
SD
V
SD
V
SD
V
SD
V
SD
V
SD
SD
SD
SD
HMS
,T= C°52
I,V5=
Am04=
D
I,V3=
Am02=
D
I,V5=
Am04=
D
I,V3=
Am02=
D
zHG2=f
zHG4=f
zHG6=f
I,V3=
Am02=
D
zHG2=f
zHG4=f
zHG6=f
I,V3=
Am02=
D
V,V2=
V0=Am0358041
SG
I,V2=
Am1=V 0.1-
SD
I,V2=
Am02=ohmm001
SD
522 Almanor A ve., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
1
UNITS MIN. TYP. MAX.
zHG1.00.21
mBd
mBd
mBd
mBd
Bd
Bd
Bd
Bd
Bd
Bd
Bd
Bd
0.02
0.51
23
82
82.0
44.0
45.0
07.0
1.32
8.71
9.31
2.21
EDS-101189 Rev. B
Absolute Maximum Ratings
Operation of this device above any one of these
parameters may cause permanent damage.
Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TOP)/T
L
Noise parameters, at typical operating frequencies
Note: Measurements at higher frequencies are currently in development
Bias Vds=3.0V, Ids=20mA
GGGGG
F
REQHGZ
|GGGGG
OPT
|
OPTANG
Preliminary
Preliminary
SPF-2086T 0.1- 12.0 GHz PHEMT GaAs FET
retemaraP lobmyS eulaV tinU
egatloVecruoS-niarDV
egatloVecruoS-etaGV
tnerruCniarDI
tnerruCetaGdrawoFI
rewoPtupnIFRP
erutarepmeTgnitarepOT
egnaRerutarepmeTegarotST
erutarepmeTlennahCT
noitapissiDrewoPP
FN
MIN
Bd rNWWWWW GABd
DS
GS
DS
DSF
IN
PO
S
CH
)noitcnuj-dael(ecnatsiseRlamrehTT
L
DISS
7+V
7-V
58Am
01Am
02+mBd
58+ot04-C°
051+ot56-C°
051+C°
011W/C°
004Wm
0.1
0.2
0.4
0.6
F
REQHGZ
0.1
0.2
0.4
0.6
47.07182.022.01.32
96.01344.081.08.71
45.04845.090.09.31
82.097107.050.02.21
Bias Vds=5.0V, Ids=40mA
GGGGG
|GGGGG
OPT
|
67.09143.072.09.32
76.06355.032.01.91
74.03957.011.00.51
13.0071-40.160.09.21
OPTANG
FN
MIN
Bd rNWWWWW GABd
522 Almanor A ve., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
2
EDS-101189 Rev. B
Scattering Parameters:
Typical S-parameters Vds=3.0V, Ids=20 mA
zHGqerF |11S| gnA11S Bd12S |12S| gnA12S Bd21S |21S| gnA21S |22S| gnA22S
50.0
1.0
5.0
0.1
5.1
0.2
5.2
0.3
5.3
0.4
5.4
0.5
5.5
0.6
5.6
0.7
5.7
0.8
5.8
0.9
5.9
0.01
5.01
0.11
5.11
0.21
89.036.0-1.810.86.9716.63-10.04.82156.07.1-
89.08.2-5.715.76.7715.94-00.07.00136.09.1-
79.03.51-5.715.75.5615.83-10.06.5826.05.9-
69.08.92-3.713.70.2519.23-20.01.9616.09.81-
39.05.44-1.712.78.8317.92-30.01.2695.04.72-
88.08.06-0.710.77.4214.72-40.03.3555.03.73-
28.05.87-8.619.66.0116.52-50.00.3415.04.84-
67.09.59-3.616.61.793.42-60.05.3374.04.85-
17.01.211-8.512.65.486.32-70.00.6254.00.76-
66.06.521-3.518.54.371.32-70.07.8134.06.37-
26.08.931-7.414.53.266.22-70.08.1104.05.08-
85.06.551-1.411.50.151.22-80.04.473.00.98-
65.03.271-6.318.46.939.12-80.03.2-33.02.001-
55.03.0719.214.47.825.12-80.03.9-03.05.211-
55.09.5512.211.43.816.12-80.08.41-72.09.421-
55.02.3416.118.36.85.12-80.09.91-62.06.531-
55.08.1311.116.35.0-2.12-90.07.52-42.06.641-
65.03.1215.014.38.9-9.02-90.05.03-32.07.851-
65.00.1119.91.32.81-2.12-90.01.43-22.00.961-
85.09.1014.90.38.62-8.02-90.07.83-32.01.971
95.05.499.88.21.53-7.02-90.01.54-42.09.661
06.07.885.86.22.34-5.02-90.03.84-52.07.551
95.02.381.85.28.05-3.02-01.04.35-72.04.741
85.00.777.74.27.85-0.02-01.03.85-92.02.931
95.00.073.73.23.66-0.02-01.06.16-03.06.431
06.06.369.62.26.37-1.02-01.04.86-03.07.921
Preliminary
Preliminary
SPF-2086T 0.1- 12.0 GHz PHEMT GaAs FET
Note : De-embedded to device pins
522 Almanor A ve., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
3
EDS-101189 Rev. B
Scattering Parameters:
Typical S-parameters Vds=5.0V, Ids=40 mA
zHGqerF |11S| gnA11S Bd12S |12S| gnA12S Bd21S |21S| gnA21S |22S| gnA22S
50.0
1.0
5.0
0.1
5.1
0.2
5.2
0.3
5.3
0.4
5.4
0.5
5.5
0.6
5.6
0.7
5.7
0.8
5.8
0.9
5.9
0.01
5.01
0.11
5.11
0.21
Note : De-embedded to device pins
89.068.1-56.9106.941.97128.04-10.014.24117.094.1-
89.000.4-01.9120.908.67144.63-20.074.1696.026.2-
79.055.81-69.8178.836.16183.73-10.031.9786.043.9-
19.030.63-65.8174.834.44106.23-20.000.1776.003.81-
38.002.35-70.8100.844.82178.92-30.024.3646.051.62-
37.059.17-55.7145.783.21104.72-40.062.4595.094.43-
46.065.29-69.6150.740.7943.62-50.008.7455.081.34-
55.069.211-71.6144.632.3860.52-60.071.1405.059.05-
84.007.231-63.5168.522.0761.42-60.080.7384.095.75-
34.099.941-65.4143.599.8574.32-70.067.2364.026.26-
93.098.861-08.3109.419.7460.32-70.040.9254.009.76-
73.076.07180.3115.419.6343.22-80.026.4224.085.47-
93.051.15104.2171.481.6210.22-80.033.9193.079.38-
34.028.33166.1138.316.5123.12-90.006.8153.015.49-
74.098.02159.0135.329.548.02-90.063.3123.080.601-
05.098.90123.0182.345.3-03.02-01.025.903.050.711-
35.063.00117.960.356.21-27.91-01.037.582.046.821-
75.052.1961.978.288.12-62.91-11.090.262.047.141-
85.034.3864.856.257.92-09.81-11.032.0-52.035.351-
36.031.7720.825.273.83-30.81-31.054.4-62.002.071-
76.093.1774.763.210.74-06.71-31.074.9-72.045.271
96.004.6669.632.203.55-70.71-41.094.41-82.088.651
07.021.1645.621.202.36-85.61-51.081.91-13.093.441
17.068.5570.610.224.17-83.61-51.092.42-33.046.231
37.042.0565.509.160.97-10.61-61.083.92-53.036.321
57.023.5420.587.172.68-06.51-71.014.33-63.062.311
Preliminary
Preliminary
SPF-2086T 0.1- 12.0 GHz PHEMT GaAs FET
522 Almanor A ve., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
4
EDS-101189 Rev. B
Preliminary
Preliminary
SPF-2086T 0.1- 12.0 GHz PHEMT GaAs FET
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
PCB Pad Layout
P2T
Part Number Ordering Information
rebmuNtraPeziSleeRleeR/seciveD
T6802-FPS"70001
Part Symbolization
The part will be symbolized with a “P2T” designator
on the top surface of the package.
niP
noitangiseD
1etaG
2ecruoS
3niarD
4ecruoS
Package Dimensions
P2T
522 Almanor A ve., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
5
EDS-101189 Rev. B
For 86 Outline
SPF-2086T 0.1- 12.0 GHz PHEMT GaAs FET
Component Tape and Reel Packaging
T ape Dimensions
Preliminary
Preliminary
D
ESCRIPTION
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htdiW
tekcoS
htpeD
hctiP
retemaideloHmottoB
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ssenkcihTepaT
epaTreirraC htdiW
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ecnatsiD )noitceriDhtdiW(noitarofrePotytivaC
)noitceriDhtgneL(noitarofrePotytivaC
522 Almanor A ve., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
6
S
YMBOL
D
D
P
W
P
S
IZE(MM
A
B
H
K
P
1
o
o
E
C
t
)
01.0±01.6
01.0±02.6
01.0±01.3
01.0±00.2
01.0±00.8
.nim05.1
01.0±05.1
01.0±00.4
01.0±57.1
52.0±01.9
10.0±50.0
03.0±00.21
T
F
2
EDS-101189 Rev. B
50.0±03.0
50.0±05.5
50.0±00.2
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