Datasheet SPD13N05L, SPU13N05L Datasheet (Siemens)

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Logic Level

• Avalanche-rated

• dv/dt rated

• 175°C operating temperature

SPD13N05L

LSPU13N05

Pin 1 Pin 2 Pin 3

G D S

Type

SPD13N05L 55 V 12.5 A 0.12
SPU13N05L 55 V 12.5 A 0.12

Maximum Ratings
Parameter Symbol Values Unit

V

DS

I

D

R

DS(on

)

Ω
Ω

Continuous drain current

T

= 25 °C

C

T

= 100 °C

C

Pulsed drain current

T

= 25 °C

C

Avalanche energy, single pulse

I

= 12.5 A, VDD = 25 V, RGS = 25

D

L = 666 µH, T

= 25 °C

j

Avalanche current,limited by T
Avalanche energy,periodic limited by T

Ω

jmax

jmax

Reverse diode dv/dt

Package Ordering Code

P-TO252 Q67040 - S4124 - A2
P-TO251 Q67040 - S4116 - A2

I

D

A

12.5

8.8

I

Dpuls

50

E

AS

mJ

52

I

AR

E

AR

dv/dt

12.5 A

3.5 mJ
kV/µs

I

= 12.5 A, VDS = 40 V, diF/dt = 200 A/µs

S

T

= 175 °C

jmax

Gate source voltage V
Power dissipation

T

= 25 °C

C

Semiconductor Group 1 29/Jan/1998

GS

P

tot

6

±

14 V

35

W

SPD13N05L

Maximum Ratings
Parameter Symbol Values Unit

LSPU13N05

Operating temperature T
Storage temperature T
Thermal resistance, junction - case R
Thermal resistance, junction - ambient (PCB mount)** R
Thermal resistance, junction - ambient R

j
stg

thJC
thJA
thJA

-55 ... + 175 °C

-55 ... + 175

≤

4.3 K/W

≤

50

≤

100

IEC climatic category, DIN IEC 68-1 55 / 175 / 56

** when mounted on 1 " square PCB ( FR4 );for recommended footprint

Electrical Characteristics,

Parameter Symbol Values Unit

Static Characteristics

Drain- source breakdown voltage

V

= 0 V, ID = 0.25 mA, Tj = 25 °C

GS

Gate threshold voltage

V

GS=VDS, ID

= 20 µA

Zero gate voltage drain current

V

= 50 V, VGS = 0 V, Tj = -40 °C

DS

V

= 50 V, VGS = 0 V, Tj = 25 °C

DS

V

= 50 V, VGS = 0 V, Tj = 150 °C

DS

Gate-source leakage current

V

= 20 V, VDS = 0 V

GS

Drain-Source on-resistance

V

= 4.5 V, ID = 8.8 A

GS

V

= 10 V, ID = 8.8 A

GS

at Tj = 25°C, unless otherwise specified

min. typ. max.

V

(BR)DSS

55 - -

V

GS(th)

1.2 1.6 2

I

DSS

-

-

-

I

GSS

- 10 100

R

DS(on)

-

-

-

0.1

-

0.105

0.062

V

µA

0.1
1
100

nA

Ω

0.12

0.07

Semiconductor Group 2 29/Jan/1998

SPD13N05L

LSPU13N05

Electrical Characteristics,

at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

V

≥

2

DS

* ID * RDS(on)max, ID

= 8.8 A

Input capacitance

V

= 0 V, VDS = 25 V, f = 1 MHz

GS

Output capacitance

V

= 0 V, VDS = 25 V, f = 1 MHz

GS

Reverse transfer capacitance

V

= 0 V, VDS = 25 V, f = 1 MHz

GS

Turn-on delay time

V

= 30 V, VGS = 4.5 V, ID = 12.5 A

DD

R

= 16

G

Ω

Rise time

V

= 30 V, VGS = 4.5 V, ID = 12.5 A

DD

R

= 16

G

Ω

Turn-off delay time

V

= 30 V, VGS = 4.5 V, ID = 12.5 A

DD

R

= 16

G

Ω

Fall time

V

= 30 V, VGS = 4.5 V, ID = 12.5 A

DD

= 16

Ω

R

G

Gate charge at threshold

V

= 40 V, ID ≥ 0.1 A, VGS =0 to 1 V

DD

Gate charge at 5.0 V

V

= 40 V, ID = 12.5 A, VGS =0 to 5 V

DD

Gate charge total

V

= 40 V, ID = 12.5 A, VGS =0 to 10 V

DD

Gate plateau voltage

V

= 40 V, ID = 12.5 A

DD

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g(th)

Q

g(5)

Q

g(total)

V

(plateau)

S

5 8 -

pF

- 317 400

- 97 120

- 54 70
ns

- 15 22

- 106 160

- 11 17

- 14 20
nC

- 0.37 0.56

- 7.85 12

- 13.5 20
V

- 4 -

Semiconductor Group 3 29/Jan/1998

SPD13N05L

LSPU13N05

Electrical Characteristics,

at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

= 25 °C

C

Inverse diode direct current,pulsed

T

= 25 °C

C

Inverse diode forward voltage

V

= 0 V, IF = 25 A

GS

Reverse recovery time

V

= 30 V, I

R

F=lS, diF

/dt = 100 A/µs

Reverse recovery charge

V

= 30 V, I

R

F=lS, diF

/dt = 100 A/µs

I

I

V

t

Q

S

SM

SD

rr

A

- - 12.5

- - 50
V

- 1.15 1.8
ns

- 50 75

rr

µC

- 0.1 0.15

Semiconductor Group 4 29/Jan/1998

SPD13N05L

LSPU13N05

Power dissipation

P

= ƒ(TC)

tot

36

W

P

tot

28

24

20

16

12

8

4

0

0 20 40 60 80 100 120 140 °C 180

Drain current

ID = ƒ(TC)

parameter: V

13

A

11

I

D

10

9
8
7
6
5
4
3
2
1

0

0 20 40 60 80 100 120 140 °C 180

T

C

GS

≥

4 V

T

C

Safe operating area

ID = ƒ(VDS)

parameter: D = 0.01, TC = 25°C

2

10

I

=

D

/

DS

V

DC

1

10

A

I

D

DS(on)

1

10

10

10

R

0

-1
0

10

t

= 3.6µs

p

10 µs

100 µs

1 ms

10 ms

10

V

Transient thermal impedance

Z

= ƒ(tp)

th JC

parameter: D = tp / T

1

10

K/W

Z

thJC

2

V

DS

10

10

10

10

0

-1

D = 0.50

0.20

0.10

-2

0.05

0.02

single pulse

-3

-7

-6

-5

-4

10

10

10

10

10

-3

10

0.01

-2

-1

10

10 0 s

t

p

Semiconductor Group 5 29/Jan/1998

SPD13N05L

LSPU13N05

Typ. output characteristics

ID = ƒ(VDS)

parameter: tp = 80 µs

28

P

= 35W

tot

A

24

I

22

D

20
18
16
14
12
10

8
6
4
2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0

j

k

i

l

h

VGS [V]

g

f

e

d

c

b

a

a 2.5
b 3.0
c 3.5
d 4.0
e 4.5
f 5.0
g 5.5
h 6.0
i 6.5
j 7.0
k 8.0
l 10.0

V

DS

Typ. drain-source on-resistance

R

DS (on)

= ƒ(ID)

parameter: tp = 80 µs, Tj = 25 °C

0.38

a

b

c

R

DS (on)

Ω

d

0.32

0.28

0.24

0.20

0.16

0.12

0.08

V

V

[V] =

[V] =

GS

GS

0.04

a

a

b

c

d

e

2.5

3.0

3.5

4.0

4.5

5.0

5.5

f

0.00
0 4 8 12 16 20 A 26

6.0

e

g

h

6.5

7.0

f

g

h

i

j

k

i

j

k

8.0

10.0

I

D

Typ. transfer characteristics ID = f (VGS)

parameter: tp = 80 µs

V

≥

2 x

x R

ID

DS(on)max

45

A

35

30

25

20

15

10

5

0

0 1 2 3 4 5 6 7 8 V 10

I

DS

D

V

GS

Semiconductor Group 6 29/Jan/1998

SPD13N05L

LSPU13N05

Drain-source on-resistance

R

DS (on)

= ƒ(Tj)

parameter: ID = 8.8 A, VGS = 4.5 V

0.38

Ω

0.32

R

DS (on)

0.28

0.24

0.20

98%

0.16

0.12

0.08

0.04

0.00

-60 -20 20 60 100 °C 180

typ

Gate threshold voltage

V

GS(th)

= f (Tj)

parameter:VGS=VDS,ID = 20µA

3.0
V

2.6

2.4

V

GS(th)

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-60 -20 20 60 100 140 V 200

T

j

max

typ

min

T

j

Typ. capacitances

C = f (V

DS

)

parameter:VGS = 0V, f = 1MHz

3

10

C

pF

2

10

1

10

0 5 10 15 20 25 30 V 40

Ciss

Coss

Crss

VDS

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

2

10

A

I

F

1

10

0

10

= 25 °C typ

T

j

= 175 °C typ

T

j

= 25 °C (98%)

T

j

Tj = 175 °C (98%)

-1

10

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

V

SD

Semiconductor Group 7 29/Jan/1998

SPD13N05L

LSPU13N05

Avalanche energy EAS = f (Tj)

parameter:ID=12.5 A,VDD =25 V
RGS =25 Ω , L = 666 µH

60

mJ

E

AS

40

30

20

10

0

20 40 60 80 100 120 140 °C 180

Typ. gate charge

VGS = ƒ(Q

parameter: I

16

V

V

GS

12

10

8

6

4

2

0

T

j

)

Gate

= 13 A

D puls

V

0,2

DS max

0 2 4 6 8 10 12 14 16 nC 20

0,8

V

DS max

Q

Gate

Drain-source breakdown voltage

V

(BR)DSS

V

(BR)DSS

= ƒ(Tj)

65

V

61

59

57

55

53

51

49

-60 -20 20 60 100 °C 180

T

j

Semiconductor Group 8 29/Jan/1998