Page 1
SPD08N50C3
j
A
j
A
j
g
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R
DS(on)
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type Package Ordering Code
SPD08N50C3 PG-TO252 Q67040-S4569
in TO-252
VDS @ T
Marking
08N50C3
R
DS(on)
I
jmax
560 V
0.6 Ω
D
7.6 A
PG-TO252
Maximum Ratings, at T
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
=5.5A, V
D
DD
=50V
Avalanche energy, repetitive t
I
=7.6A, V
D
DD
=50V
Avalanche current, repetitive t
= 25°C, unless otherwise specified
C
Symbol Value Unit
I
max
I
E
1)
limited by T
AR
limited by T
R
jmax
max
E
I
Gate source voltage V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C
C
V
P
Operating and storage temperature T
Reverse diode dv/dt
6)
dv/dt
D
Dpuls
AS
AR
R
GS
GS
tot
, T
st
7.6
4.6
22.8
230 mJ
0.5
7.6 A
±20
±30
83 W
-55... +150
15
A
V
°C
V/ns
Rev. 2.5 Page 1
2008-04-11
Page 2
Maximum Ratings
)
SPD08N50C3
Parameter
Drain Source voltage slope
V
= 400 V, I
DS
= 7.6 A, T
D
= 125 °C
j
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
Soldering temperature, reflow soldering, MSL3
1.6 mm (0.063 in.) from case for 10s
3)
Electrical Characteristics
Parameter
Symbol Conditions Values Unit
Symbol Value Unit
dv/dt 50 V/ns
Symbol Values Unit
min. typ. max.
R
R
R
T
thJC
thJA
thJA
sold
- - 1.5 K/W
- - 75
-
-
-
-
75
50
- - 260 °C
Drain-source breakdown voltage
Drain-Source avalanche
V
V
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
(BR)DSS
(BR)DS
GS(th
DSS
GSS
DS(on)
G
min. typ. max.
V
=0V, ID=0.25mA 500 - - V
GS
V
=0V, ID=7.6A - 600 -
GS
I
=350µΑ, VGS=V
D
VDS=500V, V
T
=25°C,
j
T
=150°C
j
VGS=20V, V
V
=10V, ID=4.6A,
GS
T
=25°C
j
T
=150°C
j
f=1MHz, open Drain - 1.2 -
=0V,
GS
=0V - - 100 nA
DS
2.1 3 3.9
DS
-
-
-
-
0.5
-
0.5
1.5
100
0.6
µA
1
Ω
-
Rev. 2.5 Page 2
2008-04-11
Page 3
SPD08N50C3
j
Electrical Characteristics , at T
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
4)
C
energy related
Effective output capacitance,
5)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
= 25 °C, unless otherwise specified
min. typ. max.
V
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
≥2*ID*R
DS
I
=4.6A
D
VGS=0V, V
f=1MHz
V
=0V,
GS
V
=0V to 400V
DS
VDD=400V, V
I
=7.6A, R
D
DS
G
DS(on)max
=25V,
GS
=12Ω
,
=0/10V,
- 6 - S
- 750 - pF
- 350 -
- 12 -
- 56 - pF
- 30 -
- 6 - ns
- 5 -
- 60 -
- 7 -
Gate Charge Characteristics
Gate to source charge
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Repetitve avalanche causes additional power losses that can be calculated as P
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3
Soldering temperature for TO-263: 220°C, reflow
4
is a fixed capacitance that gives the same stored energy as C
C
o(er)
5
is a fixed capacitance that gives the same charging time as C
C
o(tr)
6
ISD<=ID, di/dt<=400A/us, V
Identical low-side and high-side switch.
DClink
Q
gs
gd
g
(plateau)
=400V, V
V
=400V, ID=7.6A - 3 - nC
DD
V
=400V, ID=7.6A,
DD
=0 to 10V
V
GS
V
=400V, ID=7.6A - 5 - V
DD
peak<VBR, DSS
, Tj<T
j,max
oss
oss
.
while V
while V
- 17 -
- 32 -
=EAR*f.
AV
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DS
DSS
DSS
.
.
Rev. 2.5 Page 3
2008-04-11
Page 4
SPD08N50C3
Electrical Characteristics, at T
Parameter
Inverse diode continuous
= 25 °C, unless otherwise specified
j
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
SD
rr
rr
rrm
dirr/dt
recovery current
Typical Transient Thermal Characteristics
min. typ. max.
T
=25°C - - 7.6 A
C
- - 22.8
V
=0V, IF=I
GS
V
=400V, IF=IS ,
R
di
/dt=100A/µs
F
S
- 1 1.2 V
- 370 - ns
- 3.6 - µC
- 25 - A
- 700 - A/µs
Symbol
Thermal resistance
R
th1
R
th2
R
th3
R
th4
R
th5
R
th6
P
tot
Value Unit Symbol Value Unit
typ. typ.
Thermal capacitance
0.024 K/W
0.046
0.085
0.308
0.317
0.112
T
R
j T
th1
(t)
C
th1
C
th2
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
R
th,n
C
th,n
T
case
amb
External Heatsink
0.00012
0.0004578
0.000645
0.001867
0.004795
0.045
Ws/K
Rev. 2.5 Page 4
2008-04-11
Page 5
SPD08N50C3
1 Power dissipation
P
= f (T
tot
tot
P
100
W
80
70
60
50
40
30
20
10
)
C
SPD08N50C3
0
0 20 40 60 80 100 120
°C
2 Safe operating area
ID= f ( VDS )
T
10
=25°C
C
1
10
2
V
3
10
V
DS
parameter : D = 0 ,
2
10
A
1
10
D
I
0
10
tp = 0.001 ms
-1
10
-2
10
160
T
C
10
0
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
3 Transient thermal impedance
Z
= f (tp)
thJC
10
/T
p
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-6
10
-5
10
-4
10
-3
parameter: D = t
1
10
K/W
0
10
thJC
Z
-1
10
-2
10
-3
10
-7
10
4 Typ. output characteristic
I
= f (VDS); T
D
parameter: t
24
A
16
D
I
12
8
4
-1
10
s
t
p
0
0 5 10 15
=25°C
j
= 10 µs, V
p
20V
10V
8V
GS
7V
6,5V
6V
5,5V
5V
4,5V
V
DS
25
V
Rev. 2.5 Page 5
2008-04-11
Page 6
SPD08N50C3
5 Typ. output characteristic
I
= f (VDS); T
D
parameter: t
13
A
11
10
9
D
I
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20 22 V25
=150°C
j
= 10 µs, V
p
20V
8V
6.5V
GS
5.5V
5V
4.5V
4V
V
6V
DS
6 Typ. drain-source on resistance
R
DS(on)
parameter:
R
=f(I
)
D
T
=150°C, V
j
10
4V
Ω
8
7
DS(on)
6
5
4
3
2
1
0
0 2 4 6 8 10 12
4.5V
5V
GS
5.5V
6V
6.5V
8V
20V
A
I
D
15
7 Drain-source on-state resistance
R
DS(on)
parameter : I
R
= f (Tj)
= 4.6 A, V
D
SPD08N50C3
3.4
Ω
2.8
2.4
DS(on)
2
1.6
1.2
0.8
0.4
0
-60 -20 20 60 100
98%
typ
= 10 V
GS
°C
8 Typ. transfer characteristics
ID= f ( VGS ); V
DS
≥ 2 x I
D
x R
DS(on)max
parameter: tp = 10 µs
24
A
25°C
20
18
16
D
I
14
12
10
8
6
4
2
180
T
j
0
0 2 4 6
150°C
V
10
V
GS
Rev. 2.5 Page 6
2008-04-11
Page 7
SPD08N50C3
j
9 Typ. gate charge
= f (Q
V
GS
parameter: I
SPD08N50C3
16
V
12
0.2 V
GS
10
V
0.8 V
8
6
4
2
0
0 5 10 15 20 25 30 35 40
)
Gate
= 7.6 A pulsed
D
DS max
DS max
nC
Q
Gate
50
10 Forward characteristics of body diode
IF = f (VSD)
parameter: T
2
SPD08N50C3
10
A
1
10
F
I
0
10
-1
10
0 0.4 0.8 1.2 1.6 2 2.4
, tp = 10 µs
T
= 25 °C typ
j
T
= 150 °C typ
j
T
= 25 °C (98%)
j
T
= 150 °C (98%)
j
3
V
V
SD
11 Avalanche SOA
IAR = f (tAR)
T
par.:
I
≤ 150 °C
j
8
A
6
5
AR
4
3
2
1
0
10-310-210-110010110
T
(START)
j
=125°C
T
j
2
(START)
=25°C
t
µs
AR
10
12 Avalanche energy
E
= f (T
AS
par.: I
260
mJ
220
200
180
AS
160
E
140
120
100
4
)
j
= 5.5 A, V
D
80
60
40
20
0
20 40 60 80 100 120
DD
= 50 V
°C
160
T
j
Rev. 2.5 Page 7
2008-04-11
Page 8
SPD08N50C3
13 Drain-source breakdown voltage
V
(BR)DSS
600
570
560
550
(BR)DSS
V
540
530
520
510
500
490
480
470
460
450
= f (T
SPD08N50C3
V
-60 -20 20 60 100
)
j
°C
14 Avalanche power losses
P
= f (f )
AR
E
parameter:
500
W
AR
P
300
200
100
0
180
T
j
10
4
=0.5mJ
AR
10
5
MHz
10
6
f
15 Typ. capacitances
C = f (V
parameter:
10
pF
10
C
10
10
10
)
DS
V
=0V, f=1 MHz
GS
4
3
2
1
0
0 100 200 300
Ciss
Coss
Crss
V
16 Typ. C
E
=f(V
oss
4
stored energy
oss
)
DS
µJ
3
oss
2.5
E
2
1.5
1
0.5
500
V
DS
0
0 100 200 300
V
500
V
DS
Rev. 2.5 Page 8
2008-04-11
Page 9
Definition of diodes switching characteristics
SPD08N50C3
Rev. 2.5 Page 9
2008-04-11
Page 10
PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK)
SPD08N50C3
Rev. 2.5 Page 10
2008-04-11
Page 11
SPD08N50C3
Rev. 2.5 Page 11
2008-04-11
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