Datasheet SPU04N60S5, SPD04N60S5 Datasheet (lnfineon)

jmax

)

jmax

AR

j

g

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SPU04N60S5
SPD04N60S5

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

Type Package Ordering Code

SPU04N60S5 P-TO251. Q67040-S4228

SPD04N60S5 P-TO252. Q67040-S4202

Marking

04N60S5

04N60S5

R

2

V

DS

DS(on)

I

D

600 V

0.95 Ω

4.5 A

P-TO251.P-TO252.

3

1

3

2

1

Maximum Ratings

Parameter

Continuous drain current

T

= 25 °C

C

T

= 100 °C

C

Pulsed drain current, tp limited by T

Avalanche energy, single pulse

I

= 3.4 A, VDD = 50 V

D

Avalanche energy, repetitive tAR limited by T

I

= 4.5 A, VDD = 50 V

D

Avalanche current, repetitive tAR limited by T

jmax

Symbol Value Unit

I

I

E

1

E

I

Gate source voltage V

Gate source voltage AC (f >1Hz)

Power dissipation, T

= 25°C P

C

V

Operating and storage temperature T

D

D puls

AS

AR

GS

GS

tot

,

T

A

4.5

2.8

9

130 mJ

0.4

4.5 A

±20

V

±30

50 W

st

-55... +150

°C

Page 1

2004-03-30Rev. 2.1

Maximum Ratings

SPU04N60S5
SPD04N60S5

Parameter

Drain Source voltage slope

VDS = 480 V, ID = 4.5 A, Tj = 125 °C

Symbol Value Unit

dv/dt 20 V/ns

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

@ min. footprint

@ 6 cm

2

cooling area

2)

Soldering temperature,

R

thJC

R

thJA

R

thJA

T

- - 260 °C

sold

- - 2.5 K/W

- - 62

-

-

-

35

62

-

1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol Conditions Values Unit

Drain-source breakdown voltage

Drain-Source avalanche

V

V

breakdown voltage

Gate threshold voltage V

Zero gate voltage drain current I

Gate-source leakage current I

Drain-source on-state resistance R

Gate input resistance

R

(BR)DSS

(BR)DS

GS(th)

DSS

GSS

DS(on)

G

min. typ. max.

VGS=0V, ID=0.25mA 600 - - V

VGS=0V, ID=4.5A - 700 -

ID=200µΑ, VGS=V

VDS=600V, VGS=0V,

T

=25°C,

j

=150°C

T

j

VGS=20V, VDS=0V - - 100 nA

VGS=10V, ID=2.8A,

T

=25°C

j

=150°C

T

j

f=1MHz, open Drain - 20 -

3.5 4.5 5.5

DS

-

-

-

-

0.5

-

0.85

2.3

1

50

0.95

-

µA

Ω

Page 2

2004-03-30Rev. 2.1

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified

SPU04N60S5
SPD04N60S5

Parameter

Symbol Conditions Values Unit

Characteristics

Transconductance g

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Effective output capacitance,

3)

C

energy related

Effective output capacitance,

4)

C

time related

Turn-on delay time t

Rise time t

fs

iss

oss

rss

o(er)

o(tr)

d(on)

r

V

≥2*I

DS

D*RDS(on)max

I

=2.8A

D

VGS=0V, VDS=25V,

f=1MHz

VGS=0V,

V

=0V to 480V

DS

VDD=350V, VGS=0/10V,

I

=4.5A, RG=18Ω

D

VDD=350V, VGS=0/10V,

,

min. typ. max.

- 2.5 - S

- 580 - pF

- 220 -

- 7 -

- 20 - pF

- 35 -

- 55 - ns

- 30 -

I

=4.5A, RG=18

D

Turn-off delay time t

Fall time t

d(off)

f

VDD=350V, VGS=0/10V,

I

=4.5A, RG=18Ω

D

- 60 90

- 15 22.5

Gate Charge Characteristics

Gate to source charge

Gate to drain charge Q

Gate charge total Q

Gate plateau voltage V

1

Repetitve avalanche causes additional power losses that can be calculated as P

2

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3

C

is a fixed capacitance that gives the same stored energy as C

o(er)

4

is a fixed capacitance that gives the same charging time as C

C

o(tr)

Q

gs

gd

g

(plateau)

VDD=350V, ID=4.5A - 4.5 - nC

- 11 -

VDD=350V, ID=4.5A,

=0 to 10V

V

GS

VDD=350V, ID=4.5A - 8 - V

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

- 17.6 22.9

=EAR*f.

AV

DSS

DSS

.

.

Page 3

2004-03-30Rev. 2.1

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

SPU04N60S5
SPD04N60S5

Parameter

Inverse diode continuous

Symbol Conditions Values Unit

I

S

forward current

Inverse diode direct current,

I

SM

pulsed

Inverse diode forward voltage V

Reverse recovery time t

Reverse recovery charge Q

SD

rr

rr

Typical Transient Thermal Characteristics

Symbol

Value Unit Symbol Value Unit

typ. typ.

Thermal resistance

R

R

R

R

R

R

th1

th2

th3

th4

th5

th6

0.039 K/W

0.074

0.132

0.555

0.529

0.169

min. typ. max.

TC=25°C - - 4.5 A

- - 9

VGS=0V, IF=IS - 1 1.2 V

VR=350V, IF=IS ,

/dt=100A/µs

di

F

- 900 1530 ns

- 3.2 - µC

Thermal capacitance

C

C

C

C

C

C

th1

th2

th3

th4

th5

th6

0.00007347

0.0002831

0.0004062

0.001215

0.00276

0.029

Ws/K

T

R

j T

th1

P

(t)

tot

C

th1

C

th2

R

C

Page 4

th,n

th,n

T

case

amb

External Heatsink

2004-03-30Rev. 2.1

SPU04N60S5
SPD04N60S5

1 Power dissipation

P

= f (TC)

tot

SPU04N60S5

55

W

45

40

tot

35

P

30

25

20

15

10

5

0

0 20 40 60 80 100 120

°C

2 Safe operating area

ID = f ( VDS )

parameter : D = 0 ,

1

10

A

0

10

D

I

-1

10

-2

10

160

T

C

10

0

T

=25°C

C

tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC

1

10

10

2

V

V

DS

10

3

3 Transient thermal impedance

Z

= f (tp)

thJC

parameter: D = t

1

10

K/W

0

10

thJC

Z

-1

10

-2

10

-5

10

10

/T

p

-4

10

-3

10

4 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: t

14

A

10

D

I

8

6

4

2

-2

t

-1

10

s

p

0

0 5 10 15

= 10 µs, V

p

20V
12V
10V

GS

V

9.5V

9V

8.5V

8V

7.5V

7V

6.5V

V

25

DS

Page 5

2004-03-30Rev. 2.1

SPU04N60S5
SPD04N60S5

5 Typ. output characteristic

ID = f (VDS); Tj=150°C

parameter: t

8

A

D

I

4

2

0

0 5 10 15

= 10 µs, V

p

GS

20V
12V
10V

9.5V

V

9V

8.5V

8V

7.5V

7V

6.5V

6V

V

DS

25

6 Typ. drain-source on resistance

R

DS(on)

parameter:

R

=f(ID)

T

=150°C, V

j

5

mΩ

4

DS(on)

3.5

3

2.5

2

1.5

1

0 1 2 3 4 5 6 7

GS

20V
12V
10V
9V

8.5V
8V

7.5V
7V

6.5V
6V

A

I

D

8.5

7 Drain-source on-state resistance

R

DS(on)

parameter : I

R

= f (Tj)

= 2.8 A, VGS = 10 V

D

SPU04N60S5

5.5

Ω

4.5

4

DS(on)

3.5

3

2.5

2

1.5

1

0.5

0

-60 -20 20 60 100

98%

typ

°C

8 Typ. transfer characteristics

= f ( VGS ); V

I

D

DS

≥ 2 x I

D

x R

DS(on)max

parameter: tp = 10 µs

16

A

12

D

10

I

8

6

4

2

180

T

j

0

0 2 4 6 8 10 12 14 16

V

V

20

GS

Page 6

2004-03-30Rev. 2.1

SPU04N60S5

j

SPD04N60S5

9 Typ. gate charge

= f (Q

V

GS

parameter: I

SPU04N60S5

16

V

0.2 V

0.8 V

12

GS

10

V

8

6

4

2

0

0 4 8 12 16 20

)

Gate

= 4.5 A pulsed

D

DS max

DS max

nC

Q

Gate

26

10 Forward characteristics of body diode

IF = f (VSD)

parameter: T

1

SPU04N60S5

10

A

0

10

F

I

-1

10

-2

10

0 0.4 0.8 1.2 1.6 2 2.4

, tp = 10 µs

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

3

V

V

SD

11 Avalanche SOA

IAR = f (tAR)

par.:

T

≤ 150 °C

j

5

A

4

3.5

AR

I

3

2.5

2

1.5

0.5

1

0

10

T

j(START)

-3

10

-2

=125°C

-1

10

T

j(START)

10 0 10 1 10

=25°C

2

µs

t

AR

10

12 Avalanche energy

EAS = f (Tj)

par.: I

4

= 3.4 A, VDD = 50 V

D

160

mJ

120

AS

100

E

80

60

40

20

0

20 40 60 80 100 120

°C

160

T

j

Page 7

2004-03-30Rev. 2.1

SPU04N60S5
SPD04N60S5

13 Drain-source breakdown voltage

V

(BR)DSS

(BR)DSS

V

= f (Tj)

SPU04N60S5

720

V

680

660

640

620

600

580

560

540

-60 -20 20 60 100

°C

14 Avalanche power losses

PAR = f (f )

parameter:

200

W

150

AR

125

P

100

75

50

25

180

T

j

0

10

E

=0.4mJ

AR

4

10

5

Hz

10

6

f

15 Typ. capacitances

C = f (VDS)

parameter:

10

pF

10

C

10

10

10

V

=0V, f=1 MHz

GS

4

3

2

1

C

0

0 100 200 300 400

rss

C

iss

C

oss

V

V

DS

600

16 Typ. C

E

=f(VDS)

oss

3.5

µJ

2.5

oss

E

2

1.5

1

0.5

0

0 100 200 300 400

stored energy

oss

V

V

600

DS

Page 8

2004-03-30Rev. 2.1

Definition of diodes switching characteristics

SPU04N60S5
SPD04N60S5

Page 9

2004-03-30Rev. 2.1

P-TO-252-3-1 (D-PAK)

SPU04N60S5
SPD04N60S5

P-TO-251-3-1 (I-PAK)

+0.15

6.5

-0.10

A

±0.1

5.4

±0.1

1

-0.2

C

6.22

0.15

max

per side

3 x 0.75

2.28

4.56

±0.4

9.3

±0.1

+0.05

2.3

-0.10

B

0.9

0.5

+0.08

-0.04

+0.08

-0.04

1.0

M

B

A0.25

C

GPT09050

All metal surfaces tin plated, except area of cut.

Page 10

2004-03-30Rev. 2.1

SPU04N60S5
SPD04N60S5

Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
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Page 11

2004-03-30Rev. 2.1