Page 1
SPU02N60S5
jmax
)
jmax
AR
j
g
SPD02N60S5
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type Package Ordering Code
SPU02N60S5 PG-TO251 Q67040-S4226
SPD02N60S5 PG-TO252 Q67040-S4213
Marking
02N60S5
02N60S5
R
2
V
DS
DS(on)
I
D
600 V
3 Ω
1.8 A
PG-TO251PG-TO252
3
1
3
2
1
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
= 1.35 A, VDD = 50 V
D
Avalanche energy, repetitive tAR limited by T
I
= 1.8 A, VDD = 50 V
D
Avalanche current, repetitive tAR limited by T
jmax
Symbol Value Unit
I
I
E
1
E
I
Gate source voltage V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
C
V
Operating and storage temperature T
D
Dpuls
AS
AR
GS
GS
tot
, T
A
1.8
1.1
3.2
50 mJ
0.07
1.8 A
±20
V
±30
25 W
st
-55... +150
°C
Page 1
2005-10-05Rev. 2.4
Page 2
Maximum Ratings
SPU02N60S5
SPD02N60S5
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 1.8 A, Tj = 125 °C
Symbol Value Unit
dv/dt 20 V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
Symbol Values Unit
R
thJC
R
thJA
R
thJA
@ min. footprint
@ 6 cm
2
cooling area
Soldering temperature, *)
2)
T
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
- - 5 K/W
-
-
-
-
-
-
75
75
50
- - 260 °C
Drain-source breakdown voltage
Drain-Source avalanche
V
(BR)DSS
V
(BR)DS
VGS=0V, ID=0.25mA 600 - - V
VGS=0V, ID=1.8A - 700 -
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
GS(th)
DSS
GSS
DS(on)
ID=80µΑ, VGS=V
VDS=600V, VGS=0V,
=25°C,
T
j
=150°C
T
j
VGS=20V, VDS=0V - - 100 nA
VGS=10V, ID=1.1A,
=25°C
T
j
=150°C
T
j
*) TO252: reflow soldering, MSL3; TO251: wavesoldering
DS
min. typ. max.
3.5 4.5 5.5
-
-
-
-
0.5
-
2.7
7.3
1
50
3
-
µA
Ω
Page 2
2005-10-05Rev. 2.4
Page 3
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
SPU02N60S5
SPD02N60S5
Parameter
Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge
Q
Gate to drain charge Q
Symbol Conditions Values Unit
min. typ. max.
V
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
≥2*I
DS
D*RDS(on)max
I
=1.1A
D
VGS=0V, VDS=25V,
f=1MHz
VDD=350V, VGS=0/10V,
I
=1.8A, RG=50Ω
D
VDD=350V, ID=1.8A - 2.3 - nC
,
- 1.4 - S
- 240 - pF
- 77 -
- 4.4 -
- 35 - ns
- 35 -
- 35 42
- 20 30
- 4.5 -
Gate charge total Q
Gate plateau voltage V
1
Repetitve avalanche causes additional power losses that can be calculated as P
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
g
(plateau)
VDD=350V, ID=1.8A,
=0 to 10V
V
GS
VDD=350V, ID=1.8A - 8 - V
- 7.3 9.5
=EAR*f.
AV
Page 3
2005-10-05Rev. 2.4
Page 4
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SPU02N60S5
SPD02N60S5
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
SD
rr
rr
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.1 K/W
0.184
0.306
1.207
0.974
0.251
min. typ. max.
TC=25°C - - 1.8 A
- - 3.2
VGS=0V, IF=I
VR=350V, IF=IS ,
/dt=100A/µs
di
F
S
- 1 1.2 V
- 860 1460 ns
- 1.6 - µC
Thermal capacitance
C
C
C
C
C
C
th1
th2
th3
th4
th5
th6
0.00002806
0.0001113
0.0001679
0.000547
0.001388
0.019
Ws/K
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
Page 4
th,n
th,n
T
case
amb
External Heatsink
2005-10-05Rev. 2.4
Page 5
SPU02N60S5
SPD02N60S5
1 Power dissipation
P
= f (TC)
tot
SPU02N60S5
28
W
24
22
20
tot
18
P
16
14
12
10
8
6
4
2
0
0 20 40 60 80 100 120
°C
2 Safe operating area
ID= f ( VDS )
parameter : D = 0 ,
1
10
A
0
10
D
I
-1
10
-2
160
T
C
10
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
0
10
T
C
1
=25°C
10
2
V
3
10
V
DS
3 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: t
6
A
4
D
I
3
2
1
0
0 5 10 15
= 10 µs, V
p
GS
V
20V
12V
10V
9V
8.5V
8V
7.5V
7V
6V
V
DS
25
4 Drain-source on-state resistance
R
DS(on)
parameter : I
R
= f (Tj)
= 1.1 A, VGS = 10 V
D
SPU02N60S5
17
Ω
14
12
DS(on)
10
8
6
4
2
0
-60 -20 20 60 100
98%
typ
°C
180
T
j
Page 5
2005-10-05Rev. 2.4
Page 6
SPU02N60S5
j
SPD02N60S5
5 Typ. transfer characteristics
ID= f ( VGS ); V
DS
≥ 2 x I
D
x R
DS(on)max
parameter: tp = 10 µs
6
A
4
D
I
3
2
1
0
0 4 8 12
6 Typ. gate charge
V
= f (Q
GS
parameter: I
SPU02N60S5
16
V
0.2 V
0.8 V
12
GS
10
V
8
6
4
2
V
GS
20
V
0
0 1 2 3 4 5 6 7 8
)
Gate
= 1.8 A pulsed
D
DS max
DS max
nC
Q
10
Gate
7 Forward characteristics of body diode
IF = f (VSD)
parameter: T
1
SPU02N60S5
10
A
0
10
F
I
-1
10
-2
10
0 0.4 0.8 1.2 1.6 2 2.4
, tp = 10 µs
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
3
V
V
SD
8 Avalanche SOA
IAR = f (tAR)
par.:
T
≤ 150 °C
j
2
A
1.6
1.4
AR
I
1.2
1
0.8
T
j(START)
0.6
0.4
0.2
0
10-310-210-110010110
=125°C
T
j(START)
=25°C
2
µs
t
AR
10
4
Page 6
2005-10-05Rev. 2.4
Page 7
SPU02N60S5
SPD02N60S5
9 Avalanche energy
EAS = f (Tj)
par.: I
= 1.35 A, VDD = 50 V
D
50
mJ
AS
E
30
20
10
0
20 40 60 80 100 120
°C
10 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
160
T
j
= f (Tj)
SPU02N60S5
720
V
680
660
640
620
600
580
560
540
-60 -20 20 60 100
°C
180
T
j
11 Typ. capacitances
C = f (VDS)
parameter:
10
pF
10
C
10
10
10
V
=0V, f=1 MHz
GS
4
3
2
1
0
0 10 20 30 40 50 60 70 80
C
iss
C
oss
C
rss
100
V
V
DS
Page 7
2005-10-05Rev. 2.4
Page 8
Definition of diodes switching characteristics
SPU02N60S5
SPD02N60S5
Page 8
2005-10-05Rev. 2.4
Page 9
PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK)
SPU02N60S5
SPD02N60S5
Rev. 2.4 Page 9
2005-10-05
Page 10
PG-TO251-3-1, PG-TO251-3-21 (I-PAK)
SPU02N60S5
SPD02N60S5
Rev. 2.4 Page 10
2005-10-05
Page 11
SPU02N60S5
SPD02N60S5
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 11
2005-10-05Rev. 2.4
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