Page 1
Si2318DS
V
b
b
C/W
PRODUCT SUMMARY
VDS (V)
40
0.045 @ V
0.058 @ V
New Product
N-Channel 40-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
r
DS(on)
(W)
= 10 V 3.9
GS
= 4.5 V 3.5
GS
TO-236
(SOT-23)
G
1
2
S
Top View
Si2318DS( C8)*
*Marking Code
ID (A)
3
APPLICATIONS
D Stepper Motors
D Load Switch
D
Ordering Information: Si2318DS-T1 (with Tape and Reel)
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage V
Gate-Source Voltage V
a,
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
b
a,
_
a, b
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
I
P
I
DM
I
DS
GS
D
3.9 3.0
3.1 2.4
S
D
stg
1.25 0.75
0.8 0.48
40
"20
16
0.8
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (drain) Steady State R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
a
t v 5 sec
Steady State
R
thJA
thJF
75 100
120 166
40 50
A
W
_C
_C/W
Document Number: 72322
S-31731—Rev. A, 18-Aug-03
www.vishay.com
1
Page 2
Si2318DS
DS GS D
DS GS
p
V
DD
= 20 V, RL = 20 W
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage V
Dynamic
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Gate Resistance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
b
a
a
a
BR)DSS
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
g
fs
SD
gs
gd
iss
oss
rss
g
g
Switching
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall-Time t
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
d(on)
r
d(off)
f
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V "100 nA
VDS = 32 V, VGS = 0 V 0.5
VDS = 32 V, VGS = 0 V, TJ = 55_C
VDS w 4.5 V, VGS = 10 V 6 A
VGS = 10 V, ID = 3.9 A 0.036 0.045
VGS = 4.5 V, ID = 3.5 A 0.045 0.058
VDS = 10 V, ID = 3.9 A 11 S
IS = 1.25 A, VGS = 0 V 0.8 1.2 V
VDS = 20 V, VGS = 10 V, ID = 3.9 A
VDS = 20 V, VGS = 0 V, f = 1 MHz
V
ID ^ 1.0 A, V
= 20 V, R
= 20 W
= 10 V, RG = 6 W
GEN
Limits
40
1 3
10 15
1.6
2.1
1.8
540
80
45
5 10
12 20
20 30
15 25
V
10
mA
W
nC
W
pF
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- Drain Current (A)I
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2
20
Output Characteristics Transfer Characteristics
VGS = 10 thru 5 V
16
12
8
D
4
0
0246810
VDS - Drain-to-Source Voltage (V)
4 V
1, 2 V
3 V
20
16
12
8
- Drain Current (A)I
D
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS - Gate-to-Source Voltage (V)
TC = 125_C
25_C
Document Number: 72322
S-31731—Rev. A, 18-Aug-03
-55_C
Page 3
Si2318DS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 10 V
0 4 8 12 16 20
I
- Drain Current (A)
D
Gate Charge
VDS = 20 V
= 3.9 A
I
D
C - Capacitance (pF)
W)
W )
- On-Resistance (r
DS(on)
0.08
0.06
0.04
0.02
0.00
10
8
Vishay Siliconix
800
600
400
200
0
0 8 16 24 32 40
On-Resistance vs. Junction Temperature
2.0
VGS = 10 V
= 3.9 A
I
1.7
D
Capacitance
C
iss
C
oss
VDS - Drain-to-Source Voltage (V)
C
rss
- Gate-to-Source Voltage (V)
GS
V
- Source Current (A)I
S
6
4
2
0
024681012
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10
TJ = 150_C
1
TJ = 25_C
(Normalized)
- On-Resistance (r
DS(on)
W )
- On-Resistance (r
DS(on)
1.4
1.1
0.8
0.5
-50 -25 0 25 50 75 100 125 150
T
- Junction Temperature (_C)
J
0.20
0.16
0.12
0.08
0.04
ID = 3.9 A
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 72322
S-31731—Rev. A, 18-Aug-03
0.00
0246810
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3
Page 4
Si2318DS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.2
ID = 250 mA
-0.0
-0.2
Variance (V)V
GS(th)
-0.4
-0.6
-0.8
-50 -25 0 25 50 75 100 125 150
TJ - Temperature (_C)
100.0
Safe Operating Area, Junction-to-Case
Limited by r
10.0
DS(on)
10
8
6
Power (W)
4
2
0
0.01
Single Pulse Power
TA = 25_C
10 ms
100 ms
1
Time (sec)
10
100 6000.1
2
1
0.1
Thermal Impedance
Normalized Effective Transient
0.01
10
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
-4
Single Pulse
-3
10
1.0
1 ms
- Drain Current (A)I
D
0.1
TA = 25_C
Single Pulse
10 ms
100 ms
dc, 100 s, 10 s, 1 s
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
-2
10
Square Wave Pulse Duration (sec)
-1
1 10 60010
t
1
- TA = PDMZ
JM
t
2
t
1
t
2
= 166_C/W
thJA
(t)
thJA
100
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Document Number: 72322
S-31731—Rev. A, 18-Aug-03
Page 5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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