Datasheet Si1926DL Datasheet (Vishay) [ru]

New Product

Dual N-Channel 60-V (D-S) MOSFET

Si1926DL

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

60

1.4 at V

3.0 at V

(Ω)

DS(on)

= 10 V 0.37

GS

= 4.5 V 0.25

GS

Q

(Typ)

(A)

I

D

g

0.47

FEATURES

•TrenchFET® Power MOSFET

• 100 % R

Test e d

g

• ESD Protected: 1800 V

APPLICATIONS

RoHS

COMPLIANT

• Low Power Load Switch

SOT-363

SC-70 (6-LEADS)

S

1

1

G

2

1

D

3

2

To p View

Ordering Information: Si1926DL-T1-E3 (Lead (Pb)-free)

D

6

1

Marking Code

5

G

2

S

4

2

PD XX

Y Y

Lot Traceability
and Date Code

Part # Code

G

1

D

1

S

1

N-Channel MOSFET

G

2

N-Channel MOSFET

D

2

S

2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T

= 25 °C

C

T

= 70 °C 0.30

C

T

= 25 °C

A

TA = 70 °C

T

= 25 °C

C

T

= 25 °C

A

= 25 °C

T

C

T

= 70 °C 0.33

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

60

± 20

V

0.37

I

D

I

DM

I

S

0.34

0.27

0.65

0.43

0.25

b, c

b, c

b, c

A

0.51

P

D

, T

T

J

stg

b, c

0.30

b, c

0.20

- 55 to 150 °C

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)

Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 400 °C/W.

= 25 °C.

C

Document Number: 73684
S-72193-Rev. B, 22-Oct-07

b, d

t ≤ 5 s

Steady State

R

thJA

R

thJF

360 415

300 350

°C/W

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New Product

Si1926DL

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

V

Drain-Source Breakdown Voltage
V

Temperature Coefficient ΔVDS/T

DS

Temperature Coefficient ΔV

V

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

a

a

Forward Transconductance

Dynamic

b

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n-On D e l ay Tim e

Rise Time

Turn-Off DelayTime

Fall Time

V

DS

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

J

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

V

DS

V

V

V

DS

I

D

= 0 V, ID = 250 µA

GS

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 10 V

V

= 60 V, VGS = 0 V

DS

= 60 V, V

V

DS

V

DS

V

V

V

= 30 V, V

DS

= 30 V, V

DS

= 30 V, V

GS

GS

DS

= 0 V, TJ = 85 °C

GS

= ≥ 10 V, V

= ≥ 7.5 V, V

GS

GS

= 10 V, ID = 0.34

= 4.5 V, ID = 0.23

= 30 V, ID = 0.2 A

= 0 V, f = 1 MHz

GS

= 10 V, ID = 0.34

GS

= 4.5 V, ID = 0.34

GS

= 4.5 V 0.50

= 10 V 0.65

f = 1 MHz 160 240 Ω

= 30 V, RL = 100 Ω

V

DD

≅ 0.3 A, V

= 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 0.3 A

IF = 0.6 A, di/dt = 100 A/µs

60 V

56.7

- 3

mV/°C

12.5V

± 150

10

nA

100

A

1.4

3

Ω

159 ms

18.5

7.5

pFOutput Capacitance

4.2

0.9 1.4

0.5 0.75

0.2

nC

0.15

6.5 10

12 18

13 22

ns

14 21

0.43

0.65

A

0.8 1.2 V

16.5 25 nC

13 20

13.5

ns

3

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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Document Number: 73684

S-72193-Rev. B, 22-Oct-07

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.7

V

= 10 V thru 5 V

0.6

0.5

)A( tnerruC niarD -I

0.4

0.3

GS

V

GS

= 4 V

Si1926DL

Vishay Siliconix

0.4

0.3

)A( tnerruC niarD -I

0.2

D

0.2

V

0.1

GS

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

3.0

2.5

(Ω e c n a t s i

2.0

s
e R - n O -)

1.5

)no

1.0

(
SD

r

V

GS

= 4.5 V

V

GS

= 10 V

0.5

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

- Drain Current (A)

I

D

On-Resistance vs. Drain Current

= 3 V

D

0.1

T C = 25 °C

T C = 125 °C

0.0

T C = - 55 °C

01234

- Gate-to-Source Voltage (V)

V

GS

Transfer Characteristics Curves vs. Temp

32

24

)Fp( ecnat

icapa

16

C

- C

C

iss

C

oss

8

C

rss

0

0 102030405060

VDS - Drain-Source Voltage (V)

Capacitance

10

I

= 0.5 A

)V
(

ega
t

loV

e
c

r
uoS

D

8

6

-ot

-e

4

taG -

SG

2

V

0

0.0 0.3 0.6 0.9 1.2

Document Number: 73684
S-72193-Rev. B, 22-Oct-07

V

= 30 V

DS

V

= 48 V

DS

Qg - Total Gate Charge (nC)

- Gate Charge

Q

g

1.6
V

= 10 V, I D = 0.5 A

GS

1.4

e
c
n
atsiseR-nO

)d

1.2

ez
i

lam

ro

-

1.0

N

)n

(

o

(S
D

r

V

= 4.5 V, I D = 0.2 A

GS

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

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New Product

5

)
(

Si1926DL

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1000.00

5.0

I D = 0.5 A

V (V)

) A ( t n e r r u C e c r u o S -

100.00

10.00

S

I

1.00

0.0 0.3 0.6 0.9 1.2 1.5

T A = 150 °C

V

- Source-to-Drain Voltage (V)

SD

T A = 25 °C

Source-Drain Diode Forward Voltage

2.0

1.

8

I D = 250 µA

1.6

)ht(SG

1.4

4.0

(Ω e c n a t s i s e R - n O -)

3.0

2.0

)no(SD

r

1.0

0.0
345678 9 10

4

3

r e w o P

W

2

T A = 25 °C

- Gate-to-Source Voltage (V)

V

GS

r

vs. VGS vs. Temperature

DS(on)

T A = 125 °C

1.2

1.0

- 50 - 25 0 25 50 75 100 125 150

T J - Temperature (°C)

Threshold Voltage

1

Limited by r *

)
A ( t n e r r u C

0.1

n

i a r D -

D

I

0.001

0.01

0.1

* V

Single Pulse

GS

DS(on)

T A = 25 °C

1

- Drain-to-Source Voltage (V)

V

DS

minimum V

at which r

GS

1

0

-3

10

BV

Limited

DSS

10 100

is specified

DS(on)

-2

10

Single Pulse Power

10 ms

100 ms

1 s

10 s

DC

-1

1 100 600 10 10

Time (s)

Safe Operating Area

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Document Number: 73684

S-72193-Rev. B, 22-Oct-07

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.5

Si1926DL

Vishay Siliconix

0.5

0.4

) A ( t n e r r u C n i a r D -

0.3

0.2

D

I

0.1

0.0
0 25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating*

* The power dissipation PD is based on T

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

0.4

) W ( n o i t a p i s s i D r e w o P

0.3

0.2

0.1

0.0
0 25 50 75 100 125 150

- Case Temperature (°C)

T

C

Power Derating

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

Document Number: 73684
S-72193-Rev. B, 22-Oct-07

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Si1926DL

2

f

f

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

t n e i s n a r T e v i t c e

1

Duty Cycle = 0.5

e c n a d e p m I l a m r e h T

0.2

E d e z i l a m r o N

0.1

0.1

0.05

0.02

Single Pulse

0.01
10

-4

10

-3

10

-2

-1

1 10 600 10

Notes:

P

DM

t

1

t

- TA = P

JM

2

DM Z thJA

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

t

1

t

2

= 400 °C/W

thJA

(t)

100

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

t n e i s n a r T

e v i t

c
e

f

f E

d
e
z

i

l a m

r
o

N

1

Duty Cycle = 0.5

e c n a d e

0.1

0.2

0.1

0.05

p
m I
l a

m r e
h

T

0.02

0.01

Single Pulse

10

-4

10

-3

10

–2

-1

1 10 10

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73684.

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Document Number: 73684

S-72193-Rev. B, 22-Oct-07

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

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Revision: 08-Apr-05 1