Datasheet Si1913EDH Datasheet (Vishay) [ru]

Si1913EDH

C/W

PRODUCT SUMMARY

V

(V) r

DS

0.490 @ VGS = –4.5 V

–20

SC-70 (6-LEADS)

1

S

1

2

G

1

3

D

2

SOT-363

0.750 @ VGS = –2.5 V –0.81

1.10 @ VGS = –1.8 V –0.67

6

5

4

New Product

Dual P-Channel 20-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFETS: 1.8-V Rated

DS(on)

D

1

G

2

S

2

(W) I

Marking Code

DA XX

YY

Lot Traceability
and Date Code

Part # Code

D

–1.0

(A)

G

D ESD Protected: 3000 V
D Thermally Enhanced SC-70 Package

APPLICATIONS

D Load Switching
D PA Switch
D Level Switch

D

3 kW

Vishay Siliconix

D

3 kW

G

Top View

S

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 secs Steady State Unit

Drain-Source Voltage V
Gate-Source Voltage V

a

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I
Continuous Diode Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C
TA = 85_C

TA = 25_C 0.74 0.57
TA = 85_C

P

I

DM

I

DS

GS

D

S

D

stg

–1.0

–0.72 –0.63

–0.61 –0.48

0.38 0.30

–20

"12

–3

–55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 5 sec 130 170

Steady State

R

thJA

thJF

170 220

80 100

S

V

–0.88

A

W

_C/W

Document Number: 71415
S-03175—Rev. A, 05-Mar-01

www.vishay.com

1

Si1913EDH

W

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance
Diode Forward Voltage

Dynamic

b

a

a

a

a

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

DS(on)

g

V

fs

SD

VDS = VGS, I

= –100 mA –0.45 V

D

VDS = 0 V, VGS = "4.5 V

VDS = 0 V, VGS = "12 V

VDS = –16 V, VGS = 0 V –1

VDS = –16 V, VGS = 0 V, TJ = 85_C –5

VDS = –5 V, VGS = –4.5 V –2 A

VGS = –4.5 V, ID = –0.88 A 0.400 0.490

VGS = –2.5 V, I

VGS = –1.8 V, I

= –0.71 A

D

= –0.2 A

D

VDS = –10 V, ID = –0.88 A 1.5 S

IS = –0.47 A, VGS = 0 V –0.85 –1.2 V

"1.5 mA

"10 mA

0.610 0.750

0.850 1.10

mA

W

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

d(on)

d(off)

g

V

gs
gd

r

f

= –10 V, VGS = –4.5 V, ID = –0.88 A 0.3 nC

DS

VDD = –10 V, RL = 20 W

VDD = –10 V, RL = 20

ID ^ –0.5 A, V

GEN

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Gate-Current vs. Gate-Source Voltage

8

6

4

– Gate Current (mA)I

GSS

2

= –4.5 V, RG = 6 W

10,000

1,000

100

mA)

10

1

– Gate Current (I

0.1

GSS

0.01

1.2 1.8

0.3

0.150 0.23

0.480 0.72

0.840 1.2

0.850 1.2

Gate Current vs. Gate-Source V oltage

TJ = 150_C

TJ = 25_C

ms

0

0 4 8 12 16

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2

VGS – Gate-to-Source Voltage (V)

0.001
0 3 9 12 15

V

6

– Gate-to-Source Voltage (V)

GS

Document Number: 71415

S-03175—Rev. A, 05-Mar-01

Si1913EDH

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

3.0

VGS = 5 thru 3 .5V

2.5

2.0

1.5

1.0

– Drain Current (A)I

D

0.5

0.0
01234

1.6

Output Characteristics Transfer Characteristics

3 V

2.5 V

2 V

1.5 V

1 V

VDS – Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Vishay Siliconix

3.0

2.5

2.0

1.5

1.0

– Drain Current (A)I

D

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS – Gate-to-Source Voltage (V)

160

TC = –55_C

25_C

Capacitance

125_C

W )

1.2

0.8

– On-Resistance (r

0.4

DS(on)

0.0

– Gate-to-Source Voltage (V)

GS

V

VGS = 1.8 V

VGS = 2.5 V

VGS = 4.5 V

0.0 0.5 1.0 1.5 2.0 2.5 3.0
ID – Drain Current (A)

Gate Charge

5

VDS = 10 V
I

= 0.88 A

D

4

3

2

1

120

80

C – Capacitance (pF)

40

0

048121620

1.6

1.4

W)

1.2

(Normalized)

1.0

– On-Resistance (r

DS(on)

0.8

C

iss

C

oss

C

rss

V

– Drain-to-Source Voltage (V)

DS

On-Resistance vs. Junction Temperature

VGS = 4.5 V
I

= 0.88 A

D

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Document Number: 71415
S-03175—Rev. A, 05-Mar-01

Qg – Total Gate Charge (nC)

0.6
–50 –25 0 25 50 75 100 125 150

T

– Junction Temperature (_C)

J

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Si1913EDH

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

2

1

– Source Current (A)I

S

0.1
0 0.2 0.6 0.8

0.30

0.25

0.20

0.15

0.10

Variance (V)V

0.05

GS(th)

–0.00
–0.05
–0.10
–0.15

–50 –25 0 25 50 75 100 125 150

TJ = 150_C

TJ = 25_C

0.4

1.0 1.2

VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)

Threshold Voltage

ID = 100 mA

TJ – Temperature (_C)

1.6

1.2

W )

0.8

– On-Resistance (r

0.4

DS(on)

0.0

5

4

3

Power (W)

2

1

0

ID = 0.88 A

012345

Single Pulse Power, Junction-to-Ambient

1 600100.10.01

Time (sec)

100

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

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4

Duty Cycle = 0.5

0.2

0.1

0.05

Single Pulse

–4

0.02

10

Normalized Thermal Transient Impedance, Junction-to-Ambient

–3

–2

10

–1

1 10 60010

Square Wave Pulse Duration (sec)

Notes:

P

DM

t

1

t

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM – TA = PDMZ

4. Surface Mounted

2

t

1

t

2

= 170_C/W

thJA

(t)

thJA

100

Document Number: 71415

S-03175—Rev. A, 05-Mar-01

Si1913EDH

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Foot

2

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.01

–4

10

0.05

Single Pulse

0.02

–3

10

–2

10

Square Wave Pulse Duration (sec)

Thermal Impedance

Normalized Effective Transient

Vishay Siliconix

–1

11010

Document Number: 71415
S-03175—Rev. A, 05-Mar-01

www.vishay.com

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Notice

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or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

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Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1