Datasheet Si1913DH Datasheet (Vishay) [ru]

Si1913DH

C/W

PRODUCT SUMMARY

V

(V) r

DS

0.490 @ VGS = -4.5 V

-20

SC-70 (6-LEADS)

1

S

1

2

G

1

3

D

2

SOT-363

0.750 @ VGS = -2.5 V - 0.81

1.10 @ VGS = -1.8 V - 0.67

6

5

4

New Product

Dual P-Channel 20-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFETS: 1.8-V Rated

DS(on)

D

1

G

2

S

2

(W) I

Marking Code

DC XX

YY

Lot Traceability
and Date Code

Part # Code

D

-1.0

(A)

G

D Thermally Enhanced SC-70 Package

APPLICATIONS

D Load Switching
D PA Switch
D Level Switch

S

1

1

Vishay Siliconix

S

2

G

2

D

Top View

1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 secs Steady State Unit

Drain-Source Voltage V
Gate-Source Voltage V

a

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I
Continuous Diode Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C
TA = 85_C

TA = 25_C 0.74 0.57
TA = 85_C

P

I

DM

I

DS

GS

D

S

D

stg

- 1.0

- 0.72 -0.63

-0.61 -0.48

0.38 0.30

-20
"8

-3

-55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 5 sec 130 170

Steady State

R

thJA

thJF

170 220

80 100

-0.88

D

2

V

A

W

_C/W

Document Number: 71965
S-21482—Rev. A, 26-Aug-02

www.vishay.com

1

Si1913DH

W

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

Gate Threshold Voltage V
Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance
Diode Forward Voltage

Dynamic

b

a

a

a

a

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Reverse Recovery Time t

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

DS(on)

g

V

d(on)

d(off)

fs

SD

g
gs
gd

r

f

rr

VDS = VGS, I

= -100 mA -0.45 1 V

D

VDS = 0 V, VGS = "8 V

VDS = -16 V, VGS = 0 V -1

VDS = -16 V, VGS = 0 V, TJ = 85_C -5

VDS = -5 V, VGS = -4.5 V -2 A

VGS = -4.5 V, ID = -0.88 A 0.400 0.490
VGS = -2.5 V, I

VGS = -1.8 V, I

= -0.71 A

D

= -0.2 A

D

VDS = -10 V, ID = -0.88 A 1.5 S

IS = -0.47 A, VGS = 0 V -0.85 -1.2 V

V

= -10 V, VGS = -4.5 V, ID = -0.88 A 0.3 nC

DS

VDD = -10 V, RL = 20 W

VDD = -10 V, RL = 20

ID ^ -0.5 A, V

= -4.5 V, RG = 6 W

GEN

IF = 0.47 A, di/dt = 100 A/ms

"100 nA

0.610 0.750

0.850 1.10

1.2 1.8

0.21
18 30
25 40
15 45
12 20
30 60

mA

W

ns

www.vishay.com

2

Document Number: 71965

S-21482—Rev . A, 26-Aug-02

Si1913DH

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

3.0

VGS = 5 thru 3 .5V

2.5

2.0

1.5

1.0

- Drain Current (A)I

D

0.5

0.0
01234

1.6

Output Characteristics Transfer Characteristics

3 V

2.5 V

2 V

1.5 V

1 V

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Vishay Siliconix

3.0

2.5

2.0

1.5

1.0

- Drain Current (A)I

D

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)

160

TC = -55_C

25_C

Capacitance

125_C

W )

- On-Resistance (r

DS(on)

- Gate-to-Source Voltage (V)

GS

V

VGS = 1.8 V

1.2

0.8

0.4

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS = 2.5 V

VGS = 4.5 V

ID - Drain Current (A)

Gate Charge

5

VDS = 10 V
I

= 0.9 A

D

4

3

2

1

120

80

C - Capacitance (pF)

40

C

rss

0

024681012

On-Resistance vs. Junction Temperature

1.6

VGS = 4.5 V
I

W)

(Normalized)

- On-Resistance (r

DS(on)

1.4

1.2

1.0

0.8

D

C

iss

C

oss

V

- Drain-to-Source Voltage (V)

DS

= 0.88 A

0

0.0 0.3 0.6 0.9 1.2 1.5

Document Number: 71965
S-21482—Rev . A, 26-Aug-02

Qg - Total Gate Charge (nC)

0.6

-50 -25 0 25 50 75 100 125 150
T

- Junction Temperature (_C)

J

www.vishay.com

3

Si1913DH

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

2

1

- Source Current (A)I

S

0.1
0 0.2 0.6 0.8

0.30

0.25

0.20

0.15

0.10

Variance (V)V

0.05

GS(th)

-0.00

-0.05

-0.10

-0.15

-50 -25 0 25 50 75 100 125 150

TJ = 150_C

TJ = 25_C

0.4

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

1.0 1.2

Threshold Voltage

ID = 100 mA

TJ - Temperature (_C)

1.6

1.2

W )

0.8

- On-Resistance (r

0.4

DS(on)

0.0

Power (W)

ID = 0.88 A

012345

Single Pulse Power, Junction-to-Ambient

5

4

3

2

1

0

1 600100.10.01

Time (sec)

100

www.vishay.com

4

Safe Operating Area, Junction-to-Ambient

10

I

Limited

DM

r

Limited

DS(on)

1

I

D(on)

Limited

- Drain Current (A)I

0.1

D

0.01

TA = 25_C

Single Pulse

BV

Limited

DSS

0.1 1 10 100
VDS - Drain-to-Source Voltage (V)

P(t) = 0.0001

P(t) = 0.001

P(t) = 0.01

P(t) = 0.1
P(t) = 1

P(t) = 10
dc

Document Number: 71965

S-21482—Rev . A, 26-Aug-02

Si1913DH

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.01

0.05

0.02

Single Pulse

-4

10

-3

10

-2

10

-1

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

2

Thermal Impedance

Normalized Effective Transient

Vishay Siliconix

Notes:

P

DM

t

1

t

2

t

thJA

t

thJA

100

1
2

= 170_C/W

(t)

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM - TA = PDMZ

4. Surface Mounted

1 10 60010

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

Duty Cycle = 0.5

0.2

0.1

0.05

Single Pulse

-4

0.02

-3

10

-2

10

-1

11010

Square Wave Pulse Duration (sec)

Document Number: 71965
S-21482—Rev . A, 26-Aug-02

www.vishay.com

5

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1